公开(公告)号：US20090206056A1

公开(公告)日：2009-08-20

申请号：US12367488

申请日：2009-02-06

申请人： Songlin Xu ,  Daniel J. Devine ,  Wen Ma ,  Ce Qin ,  Vijay Vaniapura

发明人： Songlin Xu ,  Daniel J. Devine ,  Wen Ma ,  Ce Qin ,  Vijay Vaniapura

IPC分类号： C23F1/00 ,  C23F1/08 ,  B05C11/00 ,  C23C16/52

CPC分类号： H01J37/32449 ,  H01J37/3244

摘要： A multi-station workpiece processing system provides a targeted equal share of a regulated input process gas flow to each active processing station of a plurality of active processing stations using a single gas flow regulator for each gas and irrespective of the number of inactive processing stations.

摘要翻译： 多工位工件处理系统使用单个气体流量调节器为每个气体提供对多个有效处理站的每个主动处理站的调节输入处理气体流量的目标相等份额，而不考虑非活动处理站的数量。

公开(公告)号：US20080124937A1

公开(公告)日：2008-05-29

申请号：US11506173

申请日：2006-08-16

申请人： Songlin Xu ,  Ce Qin

发明人： Songlin Xu ,  Ce Qin

IPC分类号： H01L21/3065

CPC分类号： H01L21/31116

摘要： A dry etching method and apparatus are described. A workpiece supports silicon nitride and silicon dioxide. The workpiece is exposed to a plasma containing at least one of sulfur hexafluoride and nitrogen trifluoride and ammonia to selectively remove the silicon nitride in relation to the silicon dioxide. In one feature, the plasma contains sulfur hexafluoride and ammonia. In another feature, the plasma contains nitrogen trifluoride and ammonia.

摘要翻译： 描述了一种干蚀刻方法和装置。 工件支撑氮化硅和二氧化硅。 将工件暴露于含有六氟化硫和三氟化氮和氨中的至少一种的等离子体，以相对于二氧化硅选择性地除去氮化硅。 在一个特征中，等离子体含有六氟化硫和氨。 在另一特征中，等离子体含有三氟化氮和氨。

公开(公告)号：US20160115990A1

公开(公告)日：2016-04-28

申请号：US14898848

申请日：2014-04-15

申请人： Songlin Xu

发明人： Songlin Xu

IPC分类号： F16B39/28

CPC分类号： F16B39/28 ,  F16B39/30

摘要： An anti-loosening cylindrical threaded part includes internal and external threaded part. A cylindrical internal thread is arranged in inner hole of internal threaded part a cylindrical external thread is arranged on a screw of external threaded part, the inner hole of internal threaded part has cylindrical surface parallel to a longitudinal center axis of internal thread, and an inner diameter of cylindrical surface is greater than minimum inner diameter of internal thread. Surfaces of internal and external thread and cylindrical surface are not covered with anti-loosening materials. After internal and external thread are mutually screwed, cylindrical surface and a crest of external thread are mutually close contact structures, that is, a horizontal locking structure; therefore, loosening can be effectively prevented between cylindrical internal and external threaded part without longitudinal contractility of threaded part and a workpiece, and presently suitable for loosening prevention in various connections of the cylindrical threaded parts.

摘要翻译： 防松动圆柱形螺纹部分包括内部和外部螺纹部分。 在内螺纹部分的内孔中设有圆柱形内螺纹，外螺纹部分的螺钉上设有圆柱形外螺纹，内螺纹部分的内孔具有平行于内螺纹纵向中心轴线的圆柱面，内螺纹 圆柱形表面的直径大于内螺纹的最小内径。 内外螺纹和圆柱形表面的表面不被防松动材料覆盖。 内螺纹和外螺纹相互拧紧后，圆柱面和外螺纹的顶端相互紧密接触，即水平锁定结构; 因此，可以有效地防止圆柱形内外螺纹部分的松动，而不会使螺纹部件和工件具有纵向收缩性，并且目前适合于在圆柱形螺纹部件的各种连接中松动防止。

公开(公告)号：US08093157B2

公开(公告)日：2012-01-10

申请号：US11773382

申请日：2007-07-03

申请人： Li Diao ,  Songlin Xu

发明人： Li Diao ,  Songlin Xu

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31138 ,  H01J37/32431 ,  H01J2237/3342

摘要： Removing photoresist from a workpiece is described when a region of tungsten is exposed. A plasma is generated from a gas input consisting essentially of hydrogen gas and oxygen gas in a predetermined ratio. The plasma causes the photoresist to be removed from the workpiece while the region of tungsten is left substantially unmodified. The ratio of the hydrogen to oxygen can be adjusted to a particular value which causes the photoresist to be removed at about a maximum removal rate that corresponds to a minimum tungsten loss rate of about zero. Polysilicon oxidation in the presence of tungsten is described with little or no tungsten loss.

摘要翻译： 当钨的区域暴露时，描述从工件去除光致抗蚀剂。 从基本上由氢气和氧气以预定比例组成的气体输入产生等离子体。 等离子体使得光致抗蚀剂从工件移除，而钨的区域基本上未被修改。 可以将氢与氧的比例调节到特定的值，这使得以大约最大去除速率除去光致抗蚀剂，该最大去除速率对应于约零的最小钨损失率。 在钨存在下的多晶硅氧化被描述为很少或没有钨损失。

公开(公告)号：US20050112883A1

公开(公告)日：2005-05-26

申请号：US10958866

申请日：2004-10-04

申请人： Stephen Savas ,  Songlin Xu ,  David Dutton ,  Andreas Kadavanich ,  Rene George

发明人： Stephen Savas ,  Songlin Xu ,  David Dutton ,  Andreas Kadavanich ,  Rene George

IPC分类号： H01L20060101 ,  H01L21/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461

CPC分类号： H01L21/31138 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/67207

摘要： In a technique for fabricating an integrated circuit to include an active device structure which supports an electrical interconnect structure, a photoresist layer is used prior to forming an electrical interconnect structure on the active device structure. The photoresist and related residues are removed by exposing the photoresist and exposed regions of the active device structure to one or more reactive species that are generated using a gas mixture including hydrogen gas, as a predominant source of the reactive species, in a plasma source such that the photoresist and residues are continuously exposed to hydrogen-based reactive species. An associated system architecture is described which provides for a substantial flow of hydrogen gas in the process chamber.

摘要翻译： 在用于制造集成电路以包括支持电互连结构的有源器件结构的技术中，在有源器件结构上形成电互连结构之前，使用光致抗蚀剂层。 通过将活性器件结构的光致抗蚀剂和暴露区域暴露于一种或多种使用包含作为反应性物质的主要来源的氢气的气体混合物在等离子体源中产生的反应性物质来除去光致抗蚀剂和相关残余物，例如 光致抗蚀剂和残留物连续暴露于基于氢的反应物种。 描述了相关联的系统架构，其提供了处理室中的大量氢气流。

公开(公告)号：US20070269975A1

公开(公告)日：2007-11-22

申请号：US11436950

申请日：2006-05-18

申请人： Stephen E. Savas ,  Li Hou ,  Songlin Xu

发明人： Stephen E. Savas ,  Li Hou ,  Songlin Xu

IPC分类号： H01L21/4763

CPC分类号： H01L21/76814 ,  H01L21/02063 ,  H01L21/31138 ,  H01L21/76829

摘要： In device fabrication, a photoresist layer is formed on an insulation layer, above a stop layer that is supported directly on an active device structure. Holes are needed through the insulation layer to reach a contact arrangement, defined by the active device structure in which each contact is covered by the stop layer and some of the contacts include a silicide material. A plurality of contact openings are etched through the insulation layer to expose the stop layer above each contact, which may produce etch related residue. The photoresist and residues are then stripped using a first plasma that contains oxygen, without removing the stop layer such that the stop layer protects the silicide material from the oxygen. Thereafter, etching is performed to remove the stop layer from the contacts using a second plasma that is oxygen free and which contains hydrogen.

摘要翻译： 在器件制造中，光致抗蚀剂层形成在绝缘层上方，直接支撑在有源器件结构上的停止层之上。 通过绝缘层需要孔以达到由有源器件结构限定的接触装置，其中每个触点被阻挡层覆盖，并且一些触点包括硅化物材料。 通过绝缘层蚀刻多个接触开口以暴露每个接触件上方的停止层，这可能产生与蚀刻有关的残留物。 然后使用含有氧的第一等离子体剥离光致抗蚀剂和残余物，而不去除停止层，使得停止层保护硅化物材料免受氧气的影响。 此后，使用无氧的含有氢的第二等离子体来进行蚀刻以从触点去除停止层。

公开(公告)号：US20070269910A1

公开(公告)日：2007-11-22

申请号：US11749611

申请日：2007-05-16

申请人： Songlin Xu ,  Li Hou ,  Stephen Hyatt

发明人： Songlin Xu ,  Li Hou ,  Stephen Hyatt

IPC分类号： H01L21/66

CPC分类号： H01L22/26

摘要： An exemplary embodiment providing one or more improvements includes a wafer tilt detection apparatus for use with a wafer processing or manufacturing device that applies a process to the wafer and which utilizes an endpoint signal for determining control of the process applied to the wafer. The wafer tilt apparatus uses the endpoint signal in establishing when the wafer was in a tilted orientation during processing.

摘要翻译： 提供一个或多个改进的示例性实施例包括与晶片处理或制造装置一起使用的晶片倾斜检测装置，该晶片处理或制造装置向晶片施加过程，并且利用端点信号来确定施加到晶片的工艺的控制。 晶片倾斜装置在处理期间当晶片处于倾斜取向时，使用端点信号建立。

公开(公告)号：US06808647B1

公开(公告)日：2004-10-26

申请号：US09352008

申请日：1999-07-12

申请人： Songlin Xu ,  Zhiwen Sun ,  Dragan Podlesnik ,  Xueyu Qian

发明人： Songlin Xu ,  Zhiwen Sun ,  Dragan Podlesnik ,  Xueyu Qian

IPC分类号： B44C122

CPC分类号： H01J37/32431 ,  H01J2237/022 ,  H01L21/3065 ,  H01L21/32137

摘要： A method and apparatus for reducing the sensitivity of semiconductor processing to chamber conditions is provided. Process repeatability of common processes are affected by changing surface conditions which alter the recombination rates of processing chemicals to the chamber surfaces. In one aspect of the invention, a composition of one or more etchants is selected to optimize the etch performance and reduce deposition on chamber surfaces. The one or more etchants are selected to minimize buildup on the chamber surfaces, thereby controlling the chamber surface condition to minimize changes in etch rates due to differing recombination rates of free radicals with different surface conditions and achieve etch repeatability. In another embodiment, the etchant chemistry is adjusted to reduce the change to internal surface conditions after a cleaning cycle. In another embodiment, a process recipe is selected to reduce the sensitivity of the etch process to the chamber conditions. In another embodiment, chamber surface materials are selected to minimize the differences in recombination rates of free radicals on the surface materials and the byproduct depositions formed on the materials during processing.

摘要翻译： 提供了一种用于降低半导体加工对腔室条件的灵敏度的方法和装置。 常规工艺的工艺重复性受到改变表面条件的影响，这些表面条件改变了处理化学品与室表面的复合速率。 在本发明的一个方面，选择一种或多种蚀刻剂的组合物以优化蚀刻性能并减少在室表面上的沉积。 选择一种或多种蚀刻剂以最小化室表面上的积聚，由此由于由于具有不同表面条件的自由基的不同重组速率而导致的蚀刻速率的变化最小化并实现蚀刻可重复性，从而控制室表面状态。 在另一个实施方案中，调整蚀刻剂化学性以在清洁循环之后减少对内表面状况的变化。 在另一个实施例中，选择工艺配方以降低蚀刻工艺对腔室条件的灵敏度。 在另一个实施方案中，选择室表面材料以最小化表面材料上的自由基和在处理期间在材料上形成的副产物沉积物的复合速率的差异。

公开(公告)号：US06635578B1

公开(公告)日：2003-10-21

申请号：US09550646

申请日：2000-04-14

申请人： Songlin Xu ,  John Holland ,  Xueyu Qian

发明人： Songlin Xu ,  John Holland ,  Xueyu Qian

IPC分类号： H01L21302

CPC分类号： H01J37/32009 ,  H01J37/32321 ,  H01J37/32422 ,  H01J37/32871 ,  H01L21/31116

摘要： A method for operating a plasma reactor having a secondary chamber that is a neutral species source for the main chamber. The method in one embodiment of the invention consists of determining the desired increase in main chamber neutral particle density to be contributed by the secondary chamber for a given main chamber ion density range, and then to maintain the main chamber source power below a level beneath which the secondary chamber is capable of supplying the desired main chamber neutral density contribution.

摘要翻译： 一种用于操作具有作为主室的中性物质源的二次室的等离子体反应器的方法。 本发明的一个实施方案中的方法包括确定在给定的主室离子密度范围内由二级室贡献的主室中性粒子浓度的期望增加，然后将主室源功率维持在其下面的水平以下 次级室能够提供所需的主室中性密度贡献。

公开(公告)号：US09095038B2

公开(公告)日：2015-07-28

申请号：US13337248

申请日：2011-12-26

申请人： Shi Gang ,  Songlin Xu ,  TuQiang Ni

发明人： Shi Gang ,  Songlin Xu ,  TuQiang Ni

IPC分类号： C23F1/00 ,  H05H1/30 ,  H01L21/3065 ,  H01J37/32

CPC分类号： H05H1/30 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/3065

摘要： An ICP A plasma reactor having an enclosure wherein at least part of the ceiling forms a dielectric window. A substrate support is positioned within the enclosure below the dielectric window. An RF power applicator is positioned above the dielectric window to radiate RF power through the dielectric window and into the enclosure. A plurality of gas injectors are distributed uniformly above the substrate support to supply processing gas into the enclosure. A circular baffle is situated inside the enclosure and positioned above the substrate support but below the plurality of gas injectors so as to redirect flow of the processing gas.

摘要翻译： ICP等离子体反应器，其具有外壳，其中天花板的至少一部分形成电介质窗。 衬底支撑件位于电介质窗口下方的外壳内。 RF功率施加器位于电介质窗口上方，以通过介电窗口辐射RF功率并进入外壳。 多个气体喷射器均匀地分布在基板支撑件上方，以将处理气体供应到外壳中。 圆形挡板位于外壳内部，并且位于衬底支撑件的上方，但位于多个气体喷射器下方，以便改变处理气体的流动。