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    Method of forming pattern of semiconductor device
    2.
    发明授权
    Method of forming pattern of semiconductor device 失效
    半导体器件形成方法

    公开(公告)号：US07553771B2

    公开(公告)日：2009-06-30

    申请号：US11947228

    申请日：2007-11-29

    申请人： Seo Min Kim ,  Chang Moon Lim

    发明人： Seo Min Kim ,  Chang Moon Lim

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/32139 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  Y10S438/924

    摘要： A method of forming a pattern of a semiconductor device comprises forming a first hard mask film, a first resist film, and a second hard mask film over an underlying layer of a semiconductor substrate; forming a second resist pattern over the second hard mask film; etching the second hard mask film using the second resist pattern as an etching mask to form a second hard mask pattern; performing an ion-implanting process on the first resist film with the second hard mask pattern as an ion implanting mask to form an ion implanting layer in a portion of the first resist film, and selectively etching the first resist film with the second hard mask pattern and an ion implanting layer as an etching mask to form a first resist pattern.

    摘要翻译： 形成半导体器件的图案的方法包括在半导体衬底的下层上形成第一硬掩模膜，第一抗蚀膜和第二硬掩模膜; 在所述第二硬掩模膜上形成第二抗蚀剂图案; 使用第二抗蚀剂图案作为蚀刻掩模蚀刻第二硬掩模膜以形成第二硬掩模图案; 对所述第一抗蚀剂膜进行离子注入处理，其中所述第二硬掩模图案作为离子注入掩模，以在所述第一抗蚀剂膜的一部分中形成离子注入层，并且用所述第二硬掩模图案选择性地蚀刻所述第一抗蚀剂膜 以及作为蚀刻掩模的离子注入层以形成第一抗蚀剂图案。

    Semiconductor Device and Method for Manufacturing the Same
    3.
    发明申请
    Semiconductor Device and Method for Manufacturing the Same 有权
    半导体装置及其制造方法

    公开(公告)号：US20090101970A1

    公开(公告)日：2009-04-23

    申请号：US12250989

    申请日：2008-10-14

    申请人： Jin Soo Kim ,  Chang Moon Lim

    发明人： Jin Soo Kim ,  Chang Moon Lim

    IPC分类号： H01L47/00 ,  H01L21/3205

    CPC分类号： H01L29/66621 ,  H01L27/10855 ,  H01L27/10876 ,  H01L29/4236

    摘要： A method for manufacturing a semiconductor device including a vertical cell transistor structure may include forming a vertical cell transistor structure over a semiconductor substrate of a cell region; forming an insulating film over the vertical cell transistor structure; planarizing the insulating film to expose a hard mask film disposed at a top portion of the vertical cell transistor structure; and forming a storage node contact by removing the hard mask film.

    摘要翻译： 制造包括垂直单元晶体管结构的半导体器件的方法可以包括在单元区域的半导体衬底上形成垂直单元晶体管结构; 在垂直单元晶体管结构上形成绝缘膜; 对绝缘膜进行平坦化以露出设置在垂直单元晶体管结构的顶部的硬掩模膜; 并通过去除硬掩模膜形成存储节点接触。

    Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same
    4.
    发明授权
    Top anti-reflective coating polymer, its preparation method and top anti-reflective coating composition comprising the same 失效
    顶级抗反射涂料聚合物，其制备方法和包含其的顶部抗反射涂料组合物

    公开(公告)号：US07462439B2

    公开(公告)日：2008-12-09

    申请号：US11159735

    申请日：2005-06-23

    申请人： Jae Chang Jung ,  Cheol Kyu Bok ,  Chang Moon Lim ,  Seung Chan Moon

    发明人： Jae Chang Jung ,  Cheol Kyu Bok ,  Chang Moon Lim ,  Seung Chan Moon

    IPC分类号： G03F7/32 ,  G03F7/095 ,  G03F7/11 ,  G03F7/039 ,  C08F22/18

    CPC分类号： G03F7/091 ,  C09D5/32 ,  G03F7/0046 ,  G03F7/0048 ,  G03F7/0392 ,  Y10S438/952

    摘要： Disclosed herein is a top anti-reflective coating polymer represented by Formula 1, below: wherein R1 and R2 are independently hydrogen, fluoro, methyl or fluoromethyl; R3 is a C1-10 hydrocarbon or a C1-10 hydrocarbon in which the hydrogen atoms are partly replaced by fluorine atoms; and a, b and c, representing the mole fraction of each monomer, are in the range between 0.05 and 0.9. Because a top anti-reflective coating formed using the anti-reflective coating polymer of Formula 1 is not soluble in water, it can be applied to immersion lithography using water as a medium for a light source. In addition, because the top anti-reflective coating can reduce the reflectance from an underlying layer, the uniformity of CD is improved, thus enabling the formation of an ultra fine pattern.

    摘要翻译： 本文公开了由下式1表示的顶部抗反射涂层聚合物：其中R1和R2独立地为氢，氟，甲基或氟甲基; R3是其中氢原子被氟原子部分取代的C1-10烃或C1-10烃; 和表示每个单体的摩尔分数的a，b和c在0.05和0.9之间的范围内。 由于使用式1的抗反射涂层聚合物形成的顶部抗反射涂层不溶于水，因此可以使用水作为光源的介质进行浸渍光刻。 此外，由于顶部抗反射涂层可以降低来自下层的反射率，因此提高了CD的均匀性，从而能够形成超细图案。

    Lithography processes utilizing extreme ultraviolet rays and methods of manufacturing semiconductor devices using the same
    6.
    发明授权
    Lithography processes utilizing extreme ultraviolet rays and methods of manufacturing semiconductor devices using the same 有权
    使用极紫外线的平版印刷方法和使用其制造半导体器件的方法

    公开(公告)号：US08841219B2

    公开(公告)日：2014-09-23

    申请号：US13617998

    申请日：2012-09-14

    申请人： Jun Taek Park ,  Chang Moon Lim ,  Seok Kyun Kim

    发明人： Jun Taek Park ,  Chang Moon Lim ,  Seok Kyun Kim

    IPC分类号： H01L21/311

    CPC分类号： H01L21/0274 ,  G03F7/70066 ,  G03F7/70433

    摘要： Lithography processes are provided. The lithography process includes installing a reticle masking (REMA) part having a REMA open region in a lithography apparatus, loading a reticle including at least one reticle chip region in which circuit patterns are disposed into the lithography apparatus, and sequentially exposing a first wafer field, which includes a first chip region corresponding to the reticle chip region, and a second wafer field, which includes a second chip region corresponding to the reticle chip region, of a wafer to rays using the reticle and the REMA part to transfer images of the circuit patterns onto the wafer. An edge boundary of the REMA open region transferred on the first wafer field is located on a scribe lane region between the first and second chip regions while the first wafer field is exposed. Methods of manufacturing a semiconductor device using the lithography process are also provided.

    摘要翻译： 提供光刻工艺。 光刻工艺包括在光刻设备中安装具有REMA开放区域的掩模版掩模（REMA）部件，将包括至少一个掩模版芯片区域的掩模版加载到光刻设备中，并顺序曝光第一晶片磁场 ，其包括对应于标线片芯片区域的第一芯片区域和包括与掩模版芯片区域对应的第二芯片区域的第二晶片磁场，使用所述掩模版和所述REMA部件的晶片对射线来传输 电路图案到晶片上。 在第一晶片磁场上转印的REMA开放区域的边缘边界位于第一和第二芯片区域之间的划线通道区域，同时暴露第一晶片磁场。 还提供了使用光刻工艺制造半导体器件的方法。

    LITHOGRAPHY PROCESSES UTILIZING EXTREME ULTRAVIOLET RAYS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
    7.
    发明申请
    LITHOGRAPHY PROCESSES UTILIZING EXTREME ULTRAVIOLET RAYS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME 有权
    利用极端超紫外线的光刻工艺和使用该方法制造半导体器件的方法

    公开(公告)号：US20130210234A1

    公开(公告)日：2013-08-15

    申请号：US13617998

    申请日：2012-09-14

    申请人： Jun Taek PARK ,  Chang Moon LIM ,  Seok Kyun KIM

    发明人： Jun Taek PARK ,  Chang Moon LIM ,  Seok Kyun KIM

    IPC分类号： H01L21/268 ,  G03B27/32

    CPC分类号： H01L21/0274 ,  G03F7/70066 ,  G03F7/70433

    摘要： Lithography processes are provided. The lithography process includes installing a reticle masking (REMA) part having a REMA open region in a lithography apparatus, loading a reticle including at least one reticle chip region in which circuit patterns are disposed into the lithography apparatus, and sequentially exposing a first wafer field, which includes a first chip region corresponding to the reticle chip region, and a second wafer field, which includes a second chip region corresponding to the reticle chip region, of a wafer to rays using the reticle and the REMA part to transfer images of the circuit patterns onto the wafer. An edge boundary of the REMA open region transferred on the first wafer field is located on a scribe lane region between the first and second chip regions while the first wafer field is exposed. Methods of manufacturing a semiconductor device using the lithography process are also provided.

    摘要翻译： 提供光刻工艺。 光刻工艺包括在光刻设备中安装具有REMA开放区域的掩模版掩模（REMA）部件，将包含至少一个掩模版芯片区域的掩模版加载到光刻设备中，并顺序曝光第一晶片磁场 ，其包括对应于标线片芯片区域的第一芯片区域和包括与掩模版芯片区域对应的第二芯片区域的第二晶片磁场，使用所述掩模版和所述REMA部件的晶片对射线来传输 电路图案到晶片上。 在第一晶片磁场上转印的REMA开放区域的边缘边界位于第一和第二芯片区域之间的划线通道区域，同时暴露第一晶片磁场。 还提供了使用光刻工艺制造半导体器件的方法。

    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    10.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 失效
    制造半导体器件的方法

    公开(公告)号：US20070164235A1

    公开(公告)日：2007-07-19

    申请号：US11609879

    申请日：2006-12-12

    申请人： Jae Chang Jung ,  Chang Moon Lim

    发明人： Jae Chang Jung ,  Chang Moon Lim

    IPC分类号： G21G5/00

    CPC分类号： H01L21/0274

    摘要： A method for forming a fine photoresist pattern of a semiconductor device, the method comprising the steps of forming a chemically amplified photoresist film over an underlying layer formed over a semiconductor substrate to form a first photoresist pattern; exposing the first photoresist pattern without exposure mask to bake the resulting structure; and flowing the photoresist of the first photoresist pattern to obtain a second photoresist pattern.

    摘要翻译： 一种用于形成半导体器件的精细光致抗蚀剂图案的方法，所述方法包括以下步骤：在形成在半导体衬底上的下层上形成化学放大光致抗蚀剂膜以形成第一光致抗蚀剂图案; 暴露第一光致抗蚀剂图案而不具有曝光掩模以烘烤所得结构; 并使第一光致抗蚀剂图案的光致抗蚀剂流动以获得第二光致抗蚀剂图案。