利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.013 秒)

    Apparatus for controlling the capacity of an air conditioner and control method using the same
    3.
    发明授权
    Apparatus for controlling the capacity of an air conditioner and control method using the same 失效
    用于控制空调的容量的装置及使用其的控制方法

    公开(公告)号：US07762091B2

    公开(公告)日：2010-07-27

    申请号：US11267620

    申请日：2005-11-04

    申请人： Dong Sik Jin ,  Young Wan Kim ,  Seok Kyun Kim ,  Soon Gon Kim

    发明人： Dong Sik Jin ,  Young Wan Kim ,  Seok Kyun Kim ,  Soon Gon Kim

    IPC分类号： F25B7/00 ,  F25B41/00 ,  F25B49/00

    CPC分类号： F25B49/022 ,  F25B5/02 ,  F25B41/04 ,  F25B2400/0751 ,  F25B2500/28 ,  F25B2600/0251

    摘要： Disclosed herein is an apparatus for controlling the capacity of an air conditioner and a control method using the same. The capacity control apparatus is configured in such a fashion that a 3-way or 4-way direction-switching member and a low-pressure equalizing solenoid valve are provided at a refrigerant path of the air conditioner having a pair of first and second compressors, so that the compression capacity of the air conditioner is adjusted into three stages of 100%, 60%, and 40% using the first and second compressors, enabling easy variable-capacity operation. This has the effect of considerably reducing energy consumption and of preventing wear of the first and second compressors via a rapid compensation of a pressure unbalance between both the compressors. As a result, under any operating condition, it is possible to prevent a liquid backflow phenomenon from occurring when starting operation of the compressors, resulting in an improvement in the reliability and operation efficiency of the compressors.

    摘要翻译： 这里公开了一种用于控制空调的容量的装置和使用其的控制方法。 容量控制装置被构造成在具有一对第一和第二压缩机的空调器的制冷剂路径处设置三通或四通方向切换构件和低压均衡电磁阀， 因此使用第一压缩机和第二压缩机将空调机的压缩容量调整为100％，60％，40％的三级，从而容易进行变容量运转。 这具有通过快速补偿两个压缩机之间的压力不平衡而显着降低能量消耗并防止第一和第二压缩机的磨损的效果。 结果，在任何操作条件下，可以防止压缩机开始运转时发生液体回流现象，从而提高压缩机的可靠性和运行效率。

    Method for forming alignment mark
    4.
    发明授权
    Method for forming alignment mark 失效
    形成对准标记的方法

    公开(公告)号：US07615493B2

    公开(公告)日：2009-11-10

    申请号：US11481597

    申请日：2006-07-05

    申请人： Seok Kyun Kim

    发明人： Seok Kyun Kim

    IPC分类号： H01L21/311

    CPC分类号： H01L23/544 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method for forming an alignment mark comprises forming an etch stop film and an interlayer insulating film over a semiconductor substrate including a cell region and a scribe region, etching a predetermined region of the interlayer insulating film and the etch stop film to form a storage node region in the cell region and an alignment mark region in the scribe region, forming a layer for storage node over an entire surface of the resultant including the storage node region in the cell region and the alignment mark region in the scribe region, etching the layer for storage node until the interlayer insulting film is exposed, and removing the interlayer insulating film to form a capacitor in the cell region and an alignment mark in the scribe region.

    摘要翻译： 用于形成对准标记的方法包括在包括单元区域和划线区域的半导体衬底上形成蚀刻停止膜和层间绝缘膜，蚀刻层间绝缘膜的预定区域和蚀刻停止膜以形成存储节点 区域和划线区域中的对准标记区域，在包含单元区域中的存储节点区域和划线区域中的对准标记区域的结果的整个表面上形成用于存储节点的层，蚀刻该层 用于存储节点，直到层间绝缘膜暴露，并且移除层间绝缘膜以在单元区域中形成电容器，并在划线区域中形成对准标记。

    Light absorbent agent polymer for organic anti-reflective coating and preparation method and organic anti-reflective coating composition comprising the same
    5.
    发明授权
    Light absorbent agent polymer for organic anti-reflective coating and preparation method and organic anti-reflective coating composition comprising the same 失效
    用于有机抗反射涂层的光吸收剂聚合物及其制备方法和包含其的有机抗反射涂料组合物

    公开(公告)号：US07033729B2

    公开(公告)日：2006-04-25

    申请号：US10962867

    申请日：2004-10-12

    申请人： Jae-chang Jung ,  Keun Kyu Kong ,  Seok-kyun Kim

    发明人： Jae-chang Jung ,  Keun Kyu Kong ,  Seok-kyun Kim

    IPC分类号： G03C1/73 ,  G03C1/835 ,  G03F7/20 ,  G03F7/36 ,  C08F34/02

    CPC分类号： G03F7/091 ,  C08F232/08 ,  Y10S430/106 ,  Y10S430/122 ,  Y10S430/126

    摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused reflection of lower film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

    摘要翻译： 公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止下膜层或基材的扩散反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而增加光致抗蚀剂图案的均匀性 用于通过在制造半导体器件的工艺中使用193nm的ArF来形成用于光刻的光刻胶的超精细图案及其制备方法。 此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

    Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same
    6.
    发明申请
    Light absorbent agent polymer useful for organic anti-reflective coating, its preparation method and organic anti-reflective coating composition comprising the same 失效
    用于有机抗反射涂层的光吸收剂聚合物，其制备方法和包含其的有机抗反射涂料组合物

    公开(公告)号：US20050130061A1

    公开(公告)日：2005-06-16

    申请号：US10962867

    申请日：2004-10-12

    申请人： Jae-Chang Jung ,  Keun Kong ,  Seok-kyun Kim

    发明人： Jae-Chang Jung ,  Keun Kong ,  Seok-kyun Kim

    IPC分类号： G03F7/039 ,  C08F232/08 ,  G03F7/09 ,  B05D5/06 ,  C08F116/34 ,  G03C1/492

    CPC分类号： G03F7/091 ,  C08F232/08 ,  Y10S430/106 ,  Y10S430/122 ,  Y10S430/126

    摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused reflection of lower film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

    摘要翻译： 公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止下膜层或基材的扩散反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而增加光致抗蚀剂图案的均匀性 用于通过在制造半导体器件的工艺中使用193nm的ArF来形成用于光刻的光刻胶的超精细图案及其制备方法。 此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

    Lithography processes utilizing extreme ultraviolet rays and methods of manufacturing semiconductor devices using the same
    7.
    发明授权
    Lithography processes utilizing extreme ultraviolet rays and methods of manufacturing semiconductor devices using the same 有权
    使用极紫外线的平版印刷方法和使用其制造半导体器件的方法

    公开(公告)号：US08841219B2

    公开(公告)日：2014-09-23

    申请号：US13617998

    申请日：2012-09-14

    申请人： Jun Taek Park ,  Chang Moon Lim ,  Seok Kyun Kim

    发明人： Jun Taek Park ,  Chang Moon Lim ,  Seok Kyun Kim

    IPC分类号： H01L21/311

    CPC分类号： H01L21/0274 ,  G03F7/70066 ,  G03F7/70433

    摘要： Lithography processes are provided. The lithography process includes installing a reticle masking (REMA) part having a REMA open region in a lithography apparatus, loading a reticle including at least one reticle chip region in which circuit patterns are disposed into the lithography apparatus, and sequentially exposing a first wafer field, which includes a first chip region corresponding to the reticle chip region, and a second wafer field, which includes a second chip region corresponding to the reticle chip region, of a wafer to rays using the reticle and the REMA part to transfer images of the circuit patterns onto the wafer. An edge boundary of the REMA open region transferred on the first wafer field is located on a scribe lane region between the first and second chip regions while the first wafer field is exposed. Methods of manufacturing a semiconductor device using the lithography process are also provided.

    摘要翻译： 提供光刻工艺。 光刻工艺包括在光刻设备中安装具有REMA开放区域的掩模版掩模（REMA）部件，将包括至少一个掩模版芯片区域的掩模版加载到光刻设备中，并顺序曝光第一晶片磁场 ，其包括对应于标线片芯片区域的第一芯片区域和包括与掩模版芯片区域对应的第二芯片区域的第二晶片磁场，使用所述掩模版和所述REMA部件的晶片对射线来传输 电路图案到晶片上。 在第一晶片磁场上转印的REMA开放区域的边缘边界位于第一和第二芯片区域之间的划线通道区域，同时暴露第一晶片磁场。 还提供了使用光刻工艺制造半导体器件的方法。

    LITHOGRAPHY PROCESSES UTILIZING EXTREME ULTRAVIOLET RAYS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
    8.
    发明申请
    LITHOGRAPHY PROCESSES UTILIZING EXTREME ULTRAVIOLET RAYS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME 有权
    利用极端超紫外线的光刻工艺和使用该方法制造半导体器件的方法

    公开(公告)号：US20130210234A1

    公开(公告)日：2013-08-15

    申请号：US13617998

    申请日：2012-09-14

    申请人： Jun Taek PARK ,  Chang Moon LIM ,  Seok Kyun KIM

    发明人： Jun Taek PARK ,  Chang Moon LIM ,  Seok Kyun KIM

    IPC分类号： H01L21/268 ,  G03B27/32

    CPC分类号： H01L21/0274 ,  G03F7/70066 ,  G03F7/70433

    摘要： Lithography processes are provided. The lithography process includes installing a reticle masking (REMA) part having a REMA open region in a lithography apparatus, loading a reticle including at least one reticle chip region in which circuit patterns are disposed into the lithography apparatus, and sequentially exposing a first wafer field, which includes a first chip region corresponding to the reticle chip region, and a second wafer field, which includes a second chip region corresponding to the reticle chip region, of a wafer to rays using the reticle and the REMA part to transfer images of the circuit patterns onto the wafer. An edge boundary of the REMA open region transferred on the first wafer field is located on a scribe lane region between the first and second chip regions while the first wafer field is exposed. Methods of manufacturing a semiconductor device using the lithography process are also provided.

    摘要翻译： 提供光刻工艺。 光刻工艺包括在光刻设备中安装具有REMA开放区域的掩模版掩模（REMA）部件，将包含至少一个掩模版芯片区域的掩模版加载到光刻设备中，并顺序曝光第一晶片磁场 ，其包括对应于标线片芯片区域的第一芯片区域和包括与掩模版芯片区域对应的第二芯片区域的第二晶片磁场，使用所述掩模版和所述REMA部件的晶片对射线来传输 电路图案到晶片上。 在第一晶片磁场上转印的REMA开放区域的边缘边界位于第一和第二芯片区域之间的划线通道区域，同时暴露第一晶片磁场。 还提供了使用光刻工艺制造半导体器件的方法。