公开(公告)号：US08036577B2

公开(公告)日：2011-10-11

申请号：US12248966

申请日：2008-10-10

申请人： Shigeaki Tokutake ,  Shinichi Yabuki ,  Chigusa Yamane

发明人： Shigeaki Tokutake ,  Shinichi Yabuki ,  Chigusa Yamane

IPC分类号： G03G15/08

CPC分类号： G03G9/10 ,  G03G5/0507 ,  G03G5/051 ,  G03G5/14704 ,  G03G9/1138 ,  G03G9/1139 ,  G03G15/08 ,  G03G15/75 ,  G03G2215/0602

摘要： An objective is to provide an image forming method and an image forming apparatus exhibiting neither failure in lack of line image nor image defect in halftone images, together with extremely high image quality and longer lifetime. Disclosed is an image forming method possessing the steps of evenly charging an organic photoreceptor; conducting a light exposure process; conducting a developing process to visualize the electrostatic latent image formed on the organic photoreceptor to form a toner image; transferring the toner image into a transfer medium; and conducting a cleaning process to remove a residual toner from the organic photoreceptor, the method further comprising the step of replenishing a developing device with a developer comprising toner and carrier, wherein the organic photoreceptor comprises a surface protective layer containing a filler, and the carrier is mixed with the toner, after attaching a lubricant onto a carrier particle in advance.

摘要翻译： 目的是提供一种图像形成方法和图像形成装置，同时显示出半色调图像中的线图像缺失或图像缺陷，以及极高的图像质量和更长的寿命。 公开了一种具有均匀充电有机感光体的步骤的图像形成方法; 进行曝光过程; 进行显影处理以使形成在有机感光体上的静电潜像可视化以形成调色剂图像; 将调色剂图像转印到转印介质中; 并且进行清洁处理以从有机感光体中除去残留调色剂，该方法还包括用包含调色剂和载体的显影剂补充显影装置的步骤，其中有机感光体包含含有填料的表面保护层，载体 在预先将润滑剂附着在载体颗粒上之后与调色剂混合。

公开(公告)号：US6022798A

公开(公告)日：2000-02-08

申请号：US752168

申请日：1996-11-18

申请人： Hirofumi Sumi ,  Chigusa Yamane

发明人： Hirofumi Sumi ,  Chigusa Yamane

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/768 ,  H01L23/485 ,  H01L23/522 ,  H01L29/417 ,  H01L29/43

CPC分类号： H01L21/28518 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76864 ,  H01L23/485 ,  H01L29/41725 ,  H01L29/6659 ,  H01L2924/0002

摘要： A semiconductor device has a semiconductor layer such as of Si, an insulator film formed on the semiconductor layer and having a contact hole formed therein, a first contacting layer such as of Ti formed in the contact hole so as to be in contact with the semiconductor layer, a second contacting layer such as of TiN formed on the first contact material, and a contacting material such as W formed on the second contacting layer so as to substantially fill the contact hole. The first contacting layer in as formed state has a thickness of 4 nm or greater, while the second contacting layer as formed has a thickness of 1 nm or greater. The optimum thicknesses of the contacting layers are determined based on the pattern rule, e.g., 3.5 m rule, and the kinds of the materials such as Ti, TiN and W. Electrically stable ohmic contact can be obtained at a high yield.

摘要翻译： 半导体器件具有诸如Si的半导体层，形成在半导体层上并具有形成在其中的接触孔的绝缘膜，在接触孔中形成诸如Ti的第一接触层以与半导体接触 层，形成在第一接触材料上的诸如TiN的第二接触层，以及形成在第二接触层上的接触材料，例如W，以便基本上填充接触孔。 形成状态的第一接触层的厚度为4nm以上，形成的第二接触层的厚度为1nm以上。 接触层的最佳厚度根据图案规则（例如3.5μm规则）和诸如Ti，TiN和W的材料的种类来确定。可以以高产率获得电稳定的欧姆接触。

公开(公告)号：US06642143B2

公开(公告)日：2003-11-04

申请号：US10037989

申请日：2001-10-23

申请人： Chigusa Yamane

发明人： Chigusa Yamane

IPC分类号： H01L24763

CPC分类号： H01L21/76843 ,  H01L21/31116 ,  H01L21/76802 ,  H01L21/76838

摘要： A method of producing a semiconductor device able to prevent a change of shape of a contact hole and to form a contact having a low resistivity and low variability in resistivity, comprising the steps of: forming a conductive layer in a substrate; forming an insulating layer on the conductive layer; forming an opening used as the contact hole in the insulating layer to penetrate and reach the conductive layer; and removing native oxide formed on a surface of the conductive layer at a bottom of the opening by plasma etching and using an etching gas containing a fluorine compound gas at a predetermined concentration in a predetermined pressure wherein the concentration and pressure are determined within a range able to control an etching amount of the native oxide.

公开(公告)号：US5686355A

公开(公告)日：1997-11-11

申请号：US546715

申请日：1995-10-23

申请人： Hirofumi Sumi ,  Chigusa Yamane

发明人： Hirofumi Sumi ,  Chigusa Yamane

IPC分类号： C23C16/46 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76876 ,  H01L21/32051 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76877 ,  H01L2221/1089 ,  Y10S438/974

摘要： A method for forming a film of refractory metal used for interconnection in a semiconductor integrated circuit and, above all, to a method for forming a tungsten film (Blk-W film) by a blanket CVD method. A blanket tungsten (Blk-W) film 10 is formed with good adherence and coverage on an SiO.sub.X based interlayer insulating film 3 having a minute-sized contact hole 4 for improving reliability in an interconnection. Before proceeding to Blk-W-CVD, a substrate having a Ti-based adherent layer 7 on its uppermost surface is heated and exposed to a silane-based gas atmosphere for forming Si-nuclei on its surface. A W-nucleus 9 is formed by reducing the WF.sub.6 gas with H.sub.2 and a Blk-W film 10 is also formed by reducing the WF.sub.6 with SiH.sub.4 under a rate determined by the rate of the surface reaction. If the substrate is preliminarily heated before forming the Si nuclei, formation of the Si nuclei proceeds with improved uniformity. The W-nuclei may be carried out uniformly in a temperature range of 450.degree. C. or higher. If the substrate heating temperature during high speed growth is lowered to a temperature lower than that during W-nucleus formation, the thermal stress in the substrate may be released for further improving adherence between the Blk-W film 10 and the substrate.

摘要翻译： 在半导体集成电路中形成用于互连的难熔金属膜的方法，特别是通过毯式CVD法形成钨膜（Blk-W膜）的方法。 在具有微小接触孔4的SiOX基层间绝缘膜3上形成具有良好粘附性和覆盖性的覆盖钨（Blk-W）膜10，以提高互连中的可靠性。 在进行Blk-W-CVD之前，在其最上表面上具有Ti基粘合层7的基板被加热并暴露于其表面上形成Si-核的硅烷基气体气氛。 通过用H 2还原WF 6气体形成W核9，并且通过用表面反应速率确定的速率通过用SiH 4还原WF 6也形成Blk-W膜10。 如果在形成Si核之前衬底被预先加热，则Si核的形成将进行改善的均匀性。 W核可以在450℃以上的温度范围内均匀地进行。 如果在高速生长期间的基板加热温度降低到低于W形核形成期间的温度，则可以释放基板中的热应力，以进一步提高Blk-W膜10和基板之间的粘附性。

公开(公告)号：US07510809B2

公开(公告)日：2009-03-31

申请号：US11285415

申请日：2005-11-21

申请人： Chigusa Yamane ,  Keiichi Inagaki ,  Kunihiro Ogura

发明人： Chigusa Yamane ,  Keiichi Inagaki ,  Kunihiro Ogura

IPC分类号： G03G5/047 ,  G03G5/06

CPC分类号： G03G5/0614 ,  G03G5/047 ,  G03G5/0507 ,  G03G5/0564 ,  G03G5/0605 ,  G03G5/0607 ,  G03G5/0616 ,  G03G5/0629 ,  G03G5/0666 ,  G03G5/0668 ,  G03G5/0672 ,  G03G5/14704 ,  G03G5/14713 ,  G03G5/14756

摘要： An electrophotographic photoreceptor including a charge generating layer and a charge transfer layer accumulated on a support member, the charge transfer layer including at least two layers of a support side layer and a surface side layer, wherein the support side layer contains A mol/cm3 of charge mol/cm3 of charge transfer material having a dipolar moment of not more than 0.75 and inorganic particles having a number average primary particle diameter of 3-150 nm, wherein A and B satisfies relations of (1) and (2), 9.0×10−4>A>3.0×10−4  (1) 8.0×10−4>B>2.0×10−5  (2).

摘要翻译： 一种电子照相感光体，包括积聚在支撑体上的电荷产生层和电荷转移层，所述电荷转移层包括至少两层支撑侧层和表面侧层，其中所述载体侧层含有Amol / cm 3 具有偶极矩不大于0.75的电荷转移材料的电荷mol / cm 3和数均一次粒径为3-150nm的无机颗粒，其中A和B满足（1）和（2）的关系， in-line-formula description =“In-line Formulas”end =“lead”？> 9.0x10-4> A> 3.0x10-4（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line formula”end =“lead”？> 8.0x10-4> B> 2.0x10-5（2）<？ description =“内联公式”end =“tail”？>

公开(公告)号：US20060216621A1

公开(公告)日：2006-09-28

申请号：US11285415

申请日：2005-11-21

申请人： Chigusa Yamane ,  Keiichi Inagaki ,  Kunihiro Ogura

发明人： Chigusa Yamane ,  Keiichi Inagaki ,  Kunihiro Ogura

IPC分类号： G03G9/087

CPC分类号： G03G5/0614 ,  G03G5/047 ,  G03G5/0507 ,  G03G5/0564 ,  G03G5/0605 ,  G03G5/0607 ,  G03G5/0616 ,  G03G5/0629 ,  G03G5/0666 ,  G03G5/0668 ,  G03G5/0672 ,  G03G5/14704 ,  G03G5/14713 ,  G03G5/14756

摘要： An electrophotographic photoreceptor including a charge generating layer and a charge transfer layer accumulated on a support member, the charge transfer layer including at least two layers of a support side layer and a surface side layer, wherein the support side layer contains A mol/cm3 of charge mol/cm3 of charge transfer material having a dipolar moment of not more than 0.75 and inorganic particles having a number average primary particle diameter of 3-150 nm, wherein A and B satisfies relations of (1) and (2), 9.0×10−4>A>3.0×10−4   (1) 8.0×10−4>B>2.0×10−5   (2)

摘要翻译： 一种包含电荷产生层和电荷转移层的电子照相感光体，其积聚在支撑体上，所述电荷转移层包括至少两层支撑侧层和表面侧层，其中所述载体侧层含有A mol / 具有偶极矩不大于0.75的电荷转移材料的电荷mol / cm 3的SUP 3+和数均一次粒径为3-150nm的无机颗粒，其中 A和B满足（1）和（2）的关系，<？in-line-formula description =“In-line Formulas”end =“lead”？> 9.0x10 -4 > A> 3.0×10 -4（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas “end =”lead“？> 8.0×10 -4 ... <2.0×10 -5（2）<？in-line-formula description =”在线公式 “end =”tail“？>