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公开(公告)号：US20080054277A1
公开(公告)日：2008-03-06
申请号：US11923751
申请日：2007-10-25
申请人： Masayoshi Takemi , Kenichi Ono , Yoshihiko Hanamaki , Chikara Watatani , Tetsuya Yagi , Harumi Nishiguchi , Motoko Sasaki , Shinji Abe , Yasuaki Yoshida
发明人： Masayoshi Takemi , Kenichi Ono , Yoshihiko Hanamaki , Chikara Watatani , Tetsuya Yagi , Harumi Nishiguchi , Motoko Sasaki , Shinji Abe , Yasuaki Yoshida
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/2226 , H01S5/2231 , H01S5/34326 , H01S5/3436
摘要： The semiconductor laser device includes an active layer, a p-type cladding layer, and a p-type cap layer. The layers are sequentially stacked so that the semiconductor laser device is provided. The p-type cap layer includes both a p-type dopant and an n-type dopant. In another aspect, the p-type cap layer includes a first layer including a first p-type dopant and a second layer including a second p-type dopant having a diffusion coefficient smaller than that of the first p-type dopant. The first layer is far from the active layer, and the second layer is close to the active layer. In further aspect, the p-type cap layer includes carbon (C) as a p-type dopant. According to these configuration, the p-type dopant can be prevented from being diffused in the active layer and the p-type cladding layer.
摘要翻译： 半导体激光器件包括有源层，p型覆层和p型覆盖层。 依次叠层这些层以提供半导体激光器件。 p型覆盖层包括p型掺杂剂和n型掺杂剂。 在另一方面，p型覆盖层包括包含第一p型掺杂剂的第一层和包含扩散系数小于第一p型掺杂剂的扩散系数的第二p型掺杂剂的第二层。 第一层远离有源层，第二层靠近有源层。 在另一方面，p型覆盖层包括作为p型掺杂剂的碳（C）。 根据这些结构，可以防止p型掺杂剂扩散到有源层和p型覆层中。
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公开(公告)号：US07564076B2
公开(公告)日：2009-07-21
申请号：US12115565
申请日：2008-05-06
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , H01L33/30 , H01S5/0014 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3201 , H01S5/3213 , H01S5/3215
摘要： A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.
摘要翻译： 激光二极管包括设置在n半导体衬底上且与n半导体衬底晶格匹配的第一n包层，其中第一n包层为n-AlGaInP或n-GaInP; 由第一n包层支撑的n-AlGaAs的第二n包层; 以及设置在所述第一n包层和所述第二n包层之间的插入层，其中所述插入层包括与所述第一n包层相同的元件，所述插入层具有相同的Al和Ga的组成比（和 P）作为第一n包层，并且插入层包含比第一n包层更低的In的组成比。
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公开(公告)号：US20080265275A1
公开(公告)日：2008-10-30
申请号：US12115565
申请日：2008-05-06
CPC分类号： H01S5/22 , H01L33/30 , H01S5/0014 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3201 , H01S5/3213 , H01S5/3215
摘要： A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.
摘要翻译： 激光二极管包括设置在n半导体衬底上且与n半导体衬底晶格匹配的第一n包层，其中第一n包层为n-AlGaInP或n-GaInP; 由第一n包层支撑的n-AlGaAs的第二n包层; 以及设置在所述第一n包层和所述第二n包层之间的插入层，其中所述插入层包括与所述第一n包层相同的元件，所述插入层具有相同的Al和Ga的组成比（和 P）作为第一n包层，并且插入层包含比第一n包层更低的In的组成比。
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公开(公告)号：US07394114B2
公开(公告)日：2008-07-01
申请号：US11549983
申请日：2006-10-17
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , H01L33/30 , H01S5/0014 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3201 , H01S5/3213 , H01S5/3215
摘要： A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.
摘要翻译： 激光二极管包括设置在n半导体衬底上且与n半导体衬底晶格匹配的第一n包层，其中第一n包层为n-AlGaInP或n-GaInP; 由第一n包层支撑的n-AlGaAs的第二n包层; 以及设置在所述第一n包层和所述第二n包层之间的插入层，其中所述插入层包括与所述第一n包层相同的元件，所述插入层具有相同的Al和Ga的组成比（和 P）作为第一n包层，并且插入层包含比第一n包层更低的In的组成比。
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5.发明授权公开(公告)号：US07590158B2
公开(公告)日：2009-09-15
申请号：US11472383
申请日：2006-06-22
申请人： Kenichi Ono , Masayoshi Takemi , Harumi Nishiguchi
发明人： Kenichi Ono , Masayoshi Takemi , Harumi Nishiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/20 , H01S5/22 , H01S5/2231 , H01S5/3072 , H01S5/34326
摘要： A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first cladding layer thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is made smaller than in the second buffer layer. In such a structure, when a window region is formed, the diffusion rate of the impurity (Zn) can be lowered in the diffusion suppressing layer, and the diffusion of the impurity can be stopped at the second buffer layer.
摘要翻译： 在GaAs衬底上堆叠第一缓冲层（GaAs），第二缓冲层（AlGaAs）和由GaAs或AlGaAs构成的扩散抑制层。 该结构在其上具有第一覆层。 当AlGaAs用于扩散抑制层时，使AlGaAs的Al比小于第二缓冲层。 在这种结构中，当形成窗口区域时，可以在扩散抑制层中降低杂质（Zn）的扩散速率，并且可以在第二缓冲层处停止杂质的扩散。
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6.发明申请公开(公告)号：US20070086498A1
公开(公告)日：2007-04-19
申请号：US11472383
申请日：2006-06-22
申请人： Kenichi Ono , Masayoshi Takemi , Harumi Nishiguchi
发明人： Kenichi Ono , Masayoshi Takemi , Harumi Nishiguchi
IPC分类号： H01S5/00
CPC分类号： H01S5/162 , B82Y20/00 , H01S5/20 , H01S5/22 , H01S5/2231 , H01S5/3072 , H01S5/34326
摘要： A first buffer layer (GaAs), a second buffer layer (AlGaAs), and a diffusion suppressing layer consisting of GaAs or AlGaAs are stacked on a GaAs substrate. The structure has a first clad layer formed thereon. When AlGaAs is used for the diffusion suppressing layer, the Al ratio of AlGaAs is made smaller than the second buffer layer. By such a structure, when the window layer is formed, the diffusion rate of the impurity (Zn) can be lowered in the diffusion suppressing layer, and the diffusion of the impurity can be stopped at the second buffer layer.
摘要翻译： 在GaAs衬底上堆叠第一缓冲层（GaAs），第二缓冲层（AlGaAs）和由GaAs或AlGaAs构成的扩散抑制层。 该结构具有形成在其上的第一覆盖层。 当AlGaAs用于扩散抑制层时，使AlGaAs的Al比小于第二缓冲层。 通过这样的结构，当形成窗口层时，可以在扩散抑制层中降低杂质（Zn）的扩散速率，并且可以在第二缓冲层处停止杂质的扩散。
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公开(公告)号：US07298769B2
公开(公告)日：2007-11-20
申请号：US11410057
申请日：2006-04-25
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2223 , H01S5/2226 , H01S5/2275 , H01S5/3054 , H01S5/3063 , H01S5/3211 , H01S5/3434
摘要： A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×1017 cm−3 or less are stacked on a p-type InP substrate containing Zn. On the undoped InP buffer layer, a Mg-doped p-type InP cladding layer, an InGaAsP optical confinement layer, an InGaAsP MQW active layer, an n-type InGaAsP optical confinement layer, and an n-type InP cladding layer are successively stacked. The diffusion of Zn from the p-type InP substrate into the InGaAsP MQW active layer is suppressed. Moreover, a steep doping profile can be formed in the vicinity of the active layer so that deterioration of device characteristics is suppressed.
摘要翻译： 将含有低浓度Zn的p型InP缓冲层和载流子浓度为3×10 -3 -3 -3以下的未掺杂InP缓冲层堆叠在p 型InP底物含Zn。 在未掺杂的InP缓冲层中，依次层叠Mg掺杂的p型InP包层，InGaAsP光限制层，InGaAsP MQW有源层，n型InGaAsP光限制层和n型InP包覆层 。 Zn从p型InP衬底扩散到InGaAsP MQW有源层被抑制。 此外，可以在有源层附近形成陡峭的掺杂分布，从而抑制器件特性的劣化。
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公开(公告)号：US20060268952A1
公开(公告)日：2006-11-30
申请号：US11410057
申请日：2006-04-25
IPC分类号： H01S5/00
CPC分类号： H01S5/227 , B82Y20/00 , H01S5/2223 , H01S5/2226 , H01S5/2275 , H01S5/3054 , H01S5/3063 , H01S5/3211 , H01S5/3434
摘要： A p-type InP buffer layer containing Zn in a low concentration and an undoped InP buffer layer having a carrier concentration of 3×1017 cm−3 or less are stacked on a p-type InP substrate containing Zn. On the undoped InP buffer layer, a Mg-doped p-type InP cladding layer, an InGaAsP optical confinement layer, an InGaAsP MQW active layer, an n-type InGaAsP optical confinement layer, and an n-type InP cladding layer are successively stacked. The diffusion of Zn from the p-type InP substrate into the InGaAsP MQW active layer is suppressed. Moreover, a steep doping profile can be formed in the vicinity of the active layer so that deterioration of device characteristics is suppressed.
摘要翻译： 将含有低浓度Zn的p型InP缓冲层和载流子浓度为3×10 -3 -3 -3以下的未掺杂InP缓冲层堆叠在p 型InP底物含Zn。 在未掺杂的InP缓冲层中，依次层叠Mg掺杂的p型InP包层，InGaAsP光限制层，InGaAsP MQW有源层，n型InGaAsP光限制层和n型InP包覆层 。 Zn从p型InP衬底扩散到InGaAsP MQW有源层被抑制。 此外，可以在有源层附近形成陡峭的掺杂分布，从而抑制器件特性的劣化。
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公开(公告)号：US20100316080A1
公开(公告)日：2010-12-16
申请号：US12700769
申请日：2010-02-05
IPC分类号： H01S5/323
CPC分类号： H01S5/2275 , B82Y20/00 , H01S5/2222 , H01S5/3072 , H01S5/3434
摘要： A semiconductor optical element includes a p-type InP substrate doped with Zn; and a diffusion blocking layer doped with Ru, a p-type InP cladding layer, an active layer, and an n-type InP cladding layer sequentially arranged on the p-type InP substrate.
摘要翻译： 半导体光学元件包括掺杂有Zn的p型InP衬底; 以及顺序地配置在p型InP衬底上的掺杂Ru的扩散阻挡层，p型InP包层，有源层和n型InP包层。
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公开(公告)号：US20050271104A1
公开(公告)日：2005-12-08
申请号：US11046746
申请日：2005-02-01
申请人： Kenichi Ono , Masayoshi Takemi
发明人： Kenichi Ono , Masayoshi Takemi
CPC分类号： B82Y20/00 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/3063 , H01S5/34326 , H01S5/3436 , H01S2301/173 , H01S2304/04
摘要： A semiconductor laser device includes: an n-type cladding layer, an active layer, and a p-type cladding layer, each being a III-V group compound semiconductor, supported on a substrate of n-type GaAs, a p-type band discontinuity reduction layer of a III-V group compound semiconductor on the p-type cladding layer, and a p-type GaAs cap layer on the band discontinuity reduction layer. The p-type cladding layer, the p-type band discontinuity reduction layer, and the p-type cap layer are each doped with a p-type dopant which is lower in diffusivity than Zn. The p-type band discontinuity reduction layer has a concentration of p-type dopant lower in diffusivity than Zn of 2.5×1018 cm−3 or higher to attain desired device characteristics, for example, high power output and efficiency.
摘要翻译： 一种半导体激光器件包括：n型覆层，有源层和p型覆层，各自为III-V族化合物半导体，负载在n型GaAs的衬底上，p型带 p型包覆层上的III-V族化合物半导体的不连续还原层和带断层还原层上的p型GaAs覆盖层。 p型覆层，p型带不连续还原层和p型覆盖层各自掺杂有比Zn更低的扩散率的p型掺杂剂。 p型带不连续性还原层的扩散系数比2.5×10 18 -3 -3以上的Zn的p型掺杂剂的浓度低，以达到理想的器件特性， 例如，高功率输出和效率。
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