Circuit structure of test-key and test method thereof
    1.
    发明授权
    Circuit structure of test-key and test method thereof 有权
    测试键的电路结构及其测试方法

    公开(公告)号:US09030221B2

    公开(公告)日:2015-05-12

    申请号:US13236737

    申请日:2011-09-20

    Applicant: Ching-Yu Tso

    Inventor: Ching-Yu Tso

    Abstract: A circuit structure of a test-key and a test method thereof are provided. The circuit structure comprises a plurality of transistors, a first conductive contact, a plurality of second conductive contacts and a plurality of third conductive contacts. The transistors are arranged in a matrix. The first conductive contact is electrically connected to one source/drain of each transistor in each column of the matrix. Each second conductive contact is electrically connected to the other source/drain of each transistor in a corresponding column of the matrix. Each third conductive contact is electrically connected to the gate of each transistor in a corresponding row of the matrix. In the method, a plurality of driving pulses are provided to the third conductive contacts in sequence, and a plurality of output signals are read from the second conductive contacts to perform an element-character analyzing operation when a row of the transistors is turned on.

    Abstract translation: 提供了测试键的电路结构及其测试方法。 电路结构包括多个晶体管,第一导电触点,多个第二导电触点和多个第三导电触点。 晶体管布置成矩阵。 第一导电接触件电连接到矩阵的每列中每个晶体管的一个源极/漏极。 每个第二导电触点与矩阵的相应列中的每个晶体管的另一个源极/漏极电连接。 每个第三导电触点在矩阵的相应行中电连接到每个晶体管的栅极。 在该方法中,依次向第三导电触点提供多个驱动脉冲,并且当晶体管的一行导通时,从第二导电触点读取多个输出信号,以执行元件字符分析操作。

    CIRCUIT STRUCTURE OF TEST-KEY AND TEST METHOD THEREOF
    5.
    发明申请
    CIRCUIT STRUCTURE OF TEST-KEY AND TEST METHOD THEREOF 有权
    测试电路的电路结构及其测试方法

    公开(公告)号:US20130069682A1

    公开(公告)日:2013-03-21

    申请号:US13236737

    申请日:2011-09-20

    Applicant: Ching-Yu TSO

    Inventor: Ching-Yu TSO

    Abstract: A circuit structure of a test-key and a test method thereof are provided. The circuit structure comprises a plurality of transistors, a first conductive contact, a plurality of second conductive contacts and a plurality of third conductive contacts. The transistors are arranged in a matrix. The first conductive contact is electrically connected to one source/drain of each transistor in each column of the matrix. Each second conductive contact is electrically connected to the other source/drain of each transistor in a corresponding column of the matrix. Each third conductive contact is electrically connected to the gate of each transistor in a corresponding row of the matrix. In the method, a plurality of driving pulses are provided to the third conductive contacts in sequence, and a plurality of output signals are read from the second conductive contacts to perform an element-character analyzing operation when a row of the transistors is turned on.

    Abstract translation: 提供了测试键的电路结构及其测试方法。 电路结构包括多个晶体管,第一导电触点,多个第二导电触点和多个第三导电触点。 晶体管布置成矩阵。 第一导电接触件电连接到矩阵的每列中每个晶体管的一个源极/漏极。 每个第二导电触点与矩阵的相应列中的每个晶体管的另一个源极/漏极电连接。 每个第三导电触点在矩阵的相应行中电连接到每个晶体管的栅极。 在该方法中,依次向第三导电触点提供多个驱动脉冲,并且当晶体管的一行导通时,从第二导电触点读取多个输出信号,以执行元件字符分析操作。

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