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33 条记录 (耗时 0.016 秒)

    Process of preparing monolithic seal for sapphire CMH lamp
    1.
    发明授权
    Process of preparing monolithic seal for sapphire CMH lamp 失效
    为蓝宝石CMH灯制作单片密封的工艺

    公开(公告)号：US6126889A

    公开(公告)日：2000-10-03

    申请号：US22323

    申请日：1998-02-11

    申请人： Curtis E. Scott ,  Mary Sue Kaliszewski

    发明人： Curtis E. Scott ,  Mary Sue Kaliszewski

    IPC分类号： H01J9/40 ,  H01J61/36 ,  B28B1/00

    CPC分类号： H01J61/363 ,  H01J9/40

    摘要： 845 A method of producing a ceramic-metal-halide (CMH) discharge lamp having a monolithic seal between a sapphire (single crystal alumina) arc tube and a polycrystalline alumina end cap. The method includes the steps of providing an arc tube of fully dense sapphire and providing an end cap made of unsintered compressed polycrystalline alumina powder. The end cap is heated until it is presintered to remove organic binder material at a low temperature relative to the sintering temperature. The presintered end cap is placed on an end portion of the arc tube to form an interface therebetween. The assembled presintered end cap and arc tube are then heated to the sintering temperature wherein the end cap is fully sintered onto the arc tube and the sapphire tube grows into the end cap. A monolithic seal is formed at the previous interface between the end cap and the arc tube as the sapphire tube grows into the polycrystalline alumina end cap.

    摘要翻译： 845一种在蓝宝石（单晶氧化铝）电弧管和多晶氧化铝端盖之间具有整体式密封的陶瓷 - 金属卤化物（CMH）放电灯的制造方法。 该方法包括提供完全致密的蓝宝石的电弧管并提供由未烧结的压缩多晶氧化铝粉末制成的端盖的步骤。 将端盖加热至预烧结，以相对于烧结温度在低温下除去有机粘合剂材料。 预烧结端盖放置在电弧管的端部上，以形成它们之间的界面。 然后将组装的预烧结端盖和电弧管加热至烧结温度，其中端盖完全烧结到电弧管上，并且蓝宝石管生长到端盖中。 当蓝宝石管生长成多晶氧化铝端盖时，在端盖和电弧管之间的先前界面处形成一块整体密封。

    Solid state thermal conversion of polycrystalline alumina to sapphire
    3.
    发明授权
    Solid state thermal conversion of polycrystalline alumina to sapphire 失效
    多晶氧化铝固体热转化为蓝宝石

    公开(公告)号：US5451553A

    公开(公告)日：1995-09-19

    申请号：US126954

    申请日：1993-09-24

    申请人： Curtis E. Scott ,  Lionel M. Levinson ,  Randolph E. Maxwell ,  Mary S. Kaliszewski

    发明人： Curtis E. Scott ,  Lionel M. Levinson ,  Randolph E. Maxwell ,  Mary S. Kaliszewski

    IPC分类号： C04B35/115 ,  C30B1/02 ,  C30B1/04 ,  C30B1/10 ,  C30B29/20

    CPC分类号： C30B1/02 ,  C30B29/20

    摘要： A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100.degree. C. but below 2050.degree. C., the melting point of alumina.

    摘要翻译： 已经通过将多晶材料加热到材料的熔融温度的一半以上但低于材料的熔点的温度来实现将致密多晶陶瓷体大量转化成单晶体的固态工艺。 由于该工艺是固态工艺，因此陶瓷体的熔化不需要将其转化为单晶。 该方法已被用于通过将PCA加热到高于1100℃但低于2050℃的温度将含有小于100wppm的氧化镁的致密多晶氧化铝体（PCA）转化为蓝宝石（单晶氧化铝），熔点 的氧化铝。

    Doped silica glass
    5.
    发明授权
    Doped silica glass 失效
    掺杂二氧化硅玻璃

    公开(公告)号：US6136736A

    公开(公告)日：2000-10-24

    申请号：US858872

    申请日：1997-05-19

    申请人： Mohan Rajaram ,  Curtis E. Scott

    发明人： Mohan Rajaram ,  Curtis E. Scott

    IPC分类号： C03C3/06 ,  H01J61/30 ,  C03C13/04

    CPC分类号： H01J61/302 ,  C03C3/06 ,  C03C2201/34 ,  C03C2201/40

    摘要： A metal halide or mercury lamp including an arc tube comprised of a glass composition consisting essentially of at least 90 weight percent SiO.sub.2 and including between about 10 and 1000 parts per million of a trivalent element slected from the group consisting of Pr, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, U, Np, Pu, Am, Cm, Bk, Cf, Es, Fm, Md, No, Lr, Unq, Unp, Ga, and mixtures thereof such that the viscosity of the glass composition is greater than 10.sup.14.5 poise at 1100.degree. C.

    摘要翻译： 一种金属卤化物或汞灯，包括由玻璃组合物构成的电弧管，所述玻璃组合物基本上由至少90重量％的SiO 2组成，并且包括约10至1000ppm的三价元素，所述三价元素选自Pr，Nd，Pm， Sm，Gd，Tb，Dy，Ho，Er，Tm，Yb，Lu，Ac，Th，Pa，U，Np，Pu，Am，Cm，Bk，Cf，Es，Fm，Md，No，Lr，Unq， Unp，Ga及其混合物，使玻璃组合物的粘度在1100℃下大于1014.5泊。

    Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal
    8.
    发明授权
    Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal 失效
    使用晶种将多晶氧化铝固体热转化为蓝宝石

    公开(公告)号：US5549746A

    公开(公告)日：1996-08-27

    申请号：US126628

    申请日：1993-09-24

    申请人： Curtis E. Scott ,  Jack M. Strok ,  Lionel M. Levinson

    发明人： Curtis E. Scott ,  Jack M. Strok ,  Lionel M. Levinson

    IPC分类号： C30B1/02 ,  C30B29/20 ,  C30B33/02

    CPC分类号： C30B1/02 ,  C30B29/20

    摘要： A solid state seed crystal process for bulk conversion of a polycrystalline ceramic body to a single crystal body (of the same chemical composition) having the same crystal orientation as the seed crystal. The process comprises heating said body to form a monolithic join between the body and the seed crystal, heating the joined structure to reduce grain growth inhibitors and further heating the joined structure above the minimum temperature required for crystallite growth of the crystalline material, but not hot enough to melt and distort the original shape of the polycrystalline ceramic body during its conversion to a single crystal. This process has been used to convert polycrystalline alumina (PCA) bodies to sapphire having the same crystal orientation as the seed crystal by heating the PCA body, monolithically joined to a sapphire seed crystal, at a temperature above 1700.degree. C. without melting the body.

    摘要翻译： 用于将多晶陶瓷体大量转化成具有与晶种相同的晶体取向的单晶体（相同的化学组成）的固态晶种方法。 该方法包括加热所述主体以在主体和晶种之间形成整体连接，加热接合的结构以减少晶粒生长抑制剂并进一步加热接合结构高于结晶材料微晶生长所需的最低温度，但不热 足以熔化和扭曲多晶陶瓷体在其转变成单晶时的原始形状。 已经使用该方法将多晶氧化铝（PCA）体转变为具有与晶种相同的晶体取向的蓝宝石，通过加热在1700℃以上的温度下单体连接到蓝宝石晶种的PCA体，而不熔化本体 。

    Conversion of polycrystalline material to single crystal material using bodies having a selected surface topography
    9.
    发明授权
    Conversion of polycrystalline material to single crystal material using bodies having a selected surface topography 失效
    使用具有选定表面形貌的主体将多晶材料转化为单晶材料

    公开(公告)号：US5540182A

    公开(公告)日：1996-07-30

    申请号：US126830

    申请日：1993-09-24

    申请人： Lionel M. Levinson ,  Curtis E. Scott

    发明人： Lionel M. Levinson ,  Curtis E. Scott

    IPC分类号： C30B1/02 ,  C30B1/00 ,  C30B29/20

    CPC分类号： C30B1/00 ,  C30B29/20

    摘要： A solid step process for convening a polycrystalline body to a single crystal body includes the steps of forming a selected surface topography on the body and then heating the body at a temperature below its melting temperature for a time sufficient to substantially convert the polycrystalline material to single crystal material. The surface topography includes depressions or protrusions from the body having sidewalls of the polycrystalline material that are disposed to intersect one another at junctions forming relatively sharp corners, and the dimensions of the sidewalls are greater than the average grain size of the polycrystalline material. Typically alumina is the polycrystalline material and surface features include grooves or the like. The patterned alumina body with the selected surface topography is heated to a temperature between 1800.degree. and 2000.degree. C. in one or more cycles to convert the polycrystalline alumina to sapphire.

    摘要翻译： 用于将多晶体聚合到单晶体的固体步骤包括以下步骤：在体上形成所选择的表面形貌，然后在低于其熔融温度的温度下加热体，所述时间足以将多晶材料基本上转化为单 水晶材料。 表面形貌包括来自具有多晶材料侧壁的主体的凹陷或突起，所述侧壁设置成在形成相对尖锐的拐角处的接合处彼此相交，并且侧壁的尺寸大于多晶材料的平均晶粒尺寸。 通常，氧化铝是多晶材料，表面特征包括凹槽等。 将具有所选表面形貌的图案化氧化铝体在一个或多个循环中加热至1800℃至2000℃的温度以将多晶氧化铝转化为蓝宝石。