摘要:
Polycrystalline alumina bodies have been converted to sapphire by a solid state conversion process in which a localized energy source is used to heat only a portion of the body to a temperature above 1800.degree. C. Using a laser as the energy source resulted in conversion to sapphire in less than an hour. The polycrystalline alumina bodies had a magnesia content below 50 wppm, an average grain size below 100 microns, and a density greater than 3.97 g/cc.
摘要:
A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100.degree. C. but below 2050.degree. C., the melting point of alumina.
摘要:
An arc tube of fused silica for a metal halide arc discharge lamp including a fill for the arc tube comprised of a sodium halide, at least one additional metal halide, and an inert starting gas, the arc tube including a tube of fused silica having an inner wall defining an arc chamber, the inner wall of the tube having provided thereon a metal silicate coating which is vitreous and light-transmissive, and which is comprised of a silicate of at least one metal selected from the group consisting essentially of scandium, yttrium, and a rare earth element, and preferably which is the same metal as that of the at least one additional metal halide. Protection of the fused silica arc tube with the metal silicate coating reduces loss of the metallic portion of the fill by diffusion or reaction and corresponding buildup of free halogen in the arc tube.
摘要:
A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.
摘要:
A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.
摘要:
A solid state seed crystal process for bulk conversion of a polycrystalline ceramic body to a single crystal body (of the same chemical composition) having the same crystal orientation as the seed crystal. The process comprises heating said body to form a monolithic join between the body and the seed crystal, heating the joined structure to reduce grain growth inhibitors and further heating the joined structure above the minimum temperature required for crystallite growth of the crystalline material, but not hot enough to melt and distort the original shape of the polycrystalline ceramic body during its conversion to a single crystal. This process has been used to convert polycrystalline alumina (PCA) bodies to sapphire having the same crystal orientation as the seed crystal by heating the PCA body, monolithically joined to a sapphire seed crystal, at a temperature above 1700.degree. C. without melting the body.
摘要:
A solid step process for convening a polycrystalline body to a single crystal body includes the steps of forming a selected surface topography on the body and then heating the body at a temperature below its melting temperature for a time sufficient to substantially convert the polycrystalline material to single crystal material. The surface topography includes depressions or protrusions from the body having sidewalls of the polycrystalline material that are disposed to intersect one another at junctions forming relatively sharp corners, and the dimensions of the sidewalls are greater than the average grain size of the polycrystalline material. Typically alumina is the polycrystalline material and surface features include grooves or the like. The patterned alumina body with the selected surface topography is heated to a temperature between 1800.degree. and 2000.degree. C. in one or more cycles to convert the polycrystalline alumina to sapphire.
摘要:
A method of manufacturing a ceramic arc chamber (420) comprising providing a sintering tray (412) including a plurality of bores (422). The bores (422) having a first diameter upper section (424) and a second narrower diameter lower section (426). Positioning a plurality of ceramic end caps (212) having a main body portion (216), and a leg portion (219) in the bores (422) such that the leg portion (219) passes downwardly through the narrower diameter lower section (426) and the main body portion (216) is retained within the upper section (424). Moreover, the second diameter lower section (426) acts as a shoulder supporting the end cap (210). Next, a ceramic arc tube (214) is positioned within the first diameter upper section (424) and mated with the ceramic end cap (212). A second end cap (210) is mated to a second upper open end of the ceramic arc tube (214) to form an arc tube preform (420). The arc tube preforms (420) are then sintered to join the components via controlled shrinkage.
摘要:
A material is provided on the lead wires that support a filament of a fluorescent lamp assembly to inhibit arcing associated with filament burnout. The material comprises a glass that is non-alkaline. Another preferred arrangement is to incorporate a material into the assembly that will release an arc inhibiting gas in response to arcing of the lead wires. For example, a calcium carbonate or strontium carbonate material releases carbon dioxide to terminate undesired lead wire arcing.
摘要:
Disclosed is an electrodeless, low pressure gas discharge lamp. The lamp includes a vitreous envelope containing a metal vapor and an inert gas. The envelope is shaped with an external chamber for receiving an electrical excitation circuit. The excitation circuit is effective for exciting the metal vapor to emit light with electromagnetic fields that are passed through the vitreous envelope from outside, to inside, the envelope. A circuit supplies electrical power from power mains to the excitation circuit. A transparent, electrically conductive coating is disposed on the inner surface of the vitreous envelope for suppressing electromagnetic interference on the power mains. An electrically conductive coating is disposed on the outer surface of the vitreous envelope; it is capacitively coupled to the inner conductive coating, via a wall of the vitreous envelope, and is maintained at a suitable potential for suppressing electromagnetic interference on the power mains. The outer conductive coating comprises a matrix of a contiguous, inorganic, glass layer bonded to an exterior surface of the vitreous envelope, and conductive particles embedded in the matrix in a sufficiently dense manner to form a conductive coating.