公开(公告)号：US20070018075A1

公开(公告)日：2007-01-25

申请号：US11490308

申请日：2006-07-20

申请人： Yvon Cazaux ,  Didier Herault

发明人： Yvon Cazaux ,  Didier Herault

IPC分类号： H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

摘要： An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit being formed in a second semiconductor substrate, the second substrate being placed above the first substrate and separated therefrom by an intermediary insulating layer covering the access transistor, the photodiode receiving incident photons on its lower surface side opposite to the intermediary insulating layer.

摘要翻译： 一种图像传感器，包括像素组件，每个像素包括光电二极管和连接到读取电路的存取晶体管，所述光电二极管和存取晶体管形成在第一半导体衬底中和上方，全部或部分读取电路形成为 第二半导体衬底，第二衬底被放置在第一衬底之上，并通过覆盖存取晶体管的中间绝缘层与其隔开，光电二极管在其与中间绝缘层相对的下表面侧接收入射光子。

公开(公告)号：US4878103A

公开(公告)日：1989-10-31

申请号：US297651

申请日：1989-01-17

申请人： Yvon Cazaux ,  Didier Herault ,  Yves Thenoz ,  Pierre Blanchard

发明人： Yvon Cazaux ,  Didier Herault ,  Yves Thenoz ,  Pierre Blanchard

IPC分类号： G11C19/28 ,  G11C27/04 ,  H01L21/339 ,  H01L29/762

CPC分类号： G11C27/04 ,  G11C19/287

摘要： A charge transfer memory and its fabrication method are disclosed. The memory has charge transfer shift registers, with four phases and two level of electrodes, and a reading register with two phases and three levels of electrodes. At one end of each shift register, there is a final electrode contiguous with a reading storage electrode of the reading register, which is itself contiguous to a reading transfer electrode. These electrodes are made in a layer, with a second type of doping, of a semiconductor substrate with a first type of doping. Zones with a third type of doping are made facing the transfer electrodes of the reading register. According to the invention, facing the final electrode of each shift register, a zone with a fourth type of doping is made. This zone with a fourth type of doping prevents charges flowing in the reading register from returning to a shift register.

摘要翻译： 公开了电荷转移存储器及其制造方法。 存储器具有电荷转移移位寄存器，具有四相和两电平电极，以及具有两相和三电平电平的读取寄存器。 在每个移位寄存器的一端，存在与读取寄存器的读取存储电极相邻的最终电极，其本身与读取转移电极相邻。 这些电极制成具有第一类掺杂的半导体衬底的具有第二类掺杂的层。 具有第三类掺杂的区域面向读取寄存器的转移电极。 根据本发明，面对每个移位寄存器的最终电极，制成具有第四类掺杂的区域。 具有第四类掺杂的区域防止在读取寄存器中流动的电荷返回到移位寄存器。

公开(公告)号：US4873562A

公开(公告)日：1989-10-10

申请号：US287887

申请日：1988-12-21

申请人： Yvon Cazaux ,  Yves Thenoz ,  Didier Herault ,  Pierre Blanchard

发明人： Yvon Cazaux ,  Yves Thenoz ,  Didier Herault ,  Pierre Blanchard

IPC分类号： G11C27/04 ,  H01L21/339 ,  H01L29/762 ,  H01L29/768

CPC分类号： H01L29/76841

摘要： Disclosed are a charge-coupled device with lowering of output potential as well as a method for the fabrication of this device. In a known way, the device comprises, upstream on a semiconducting substrate with a first type of doping (P), a semiconducting layer with a second type of doping (N) and an insulating layer covering the former layer. Pairs of electrodes are formed on the insulating layer. Each pair has a transfer electrode and a storage electrode. Zones with a third type of doping N.sup.+) are made in the layer of a second type (N). A layer with a third type of doping (N.sup.-) is made downstream, in the layer with a second type of doping, and, downstream, there is formed at least one other pair of additional transfer and storage electrodes. A zone with a fourth type of doping (N.sup.--) is made beneath the additional transfer electrode in the layer with a third type of doping (N.sup.-). This pair of additional electrodes and the zone with a fourth type of doping make it possible to obtain the lowering of transfer potential at output.

摘要翻译： 公开了具有降低输出电位的电荷耦合器件以及用于制造该器件的方法。 以已知的方式，器件包括在具有第一类型掺杂（P）的半导体衬底上的上游，具有第二类型掺杂（N）的半导体层和覆盖前一层的绝缘层。 在绝缘层上形成一对电极。 每一对具有转移电极和存储电极。 在第二类型（N）的层中制造具有第三类掺杂N +的区域）。 在具有第二种类型的掺杂的层中，具有第三类掺杂（N-）的层被制成下游，并且在下游形成至少另外一对额外的转移和存储电极。 在具有第三类掺杂（N）的层中，在附加转移电极的下方形成具有第四类掺杂（N-）的区域。 这对附加电极和具有第四类掺杂的区域使得可以获得输出时的转移电位的降低。

公开(公告)号：US07253393B2

公开(公告)日：2007-08-07

申请号：US10820407

申请日：2004-04-08

申请人： Yvon Cazaux ,  Didier Herault

发明人： Yvon Cazaux ,  Didier Herault

IPC分类号： H01L31/00 ,  H01L27/00 ,  G01J1/44 ,  H01J40/14 ,  H03F3/08

CPC分类号： H04N5/3597 ,  H04N5/374

摘要： A method for controlling a photosensitive cell including a photodiode connected to a read node via a MOS transfer transistor, the read node being connected to a source of a reference voltage via a MOS reset transistor, cyclically including a waiting phase at the end of which the photodiode is isolated from the reference voltage; an integration phase during which the voltage of the photodiode varies from a reset voltage to a useful voltage that depends on the lighting; and a phase of reading a voltage representative of the useful voltage, wherein the isolation of the photodiode of the read node at the end of the waiting phase includes the steps of setting the transfer transistor to the on state, the reset transistor being off; turning off the transfer transistor; and setting the reset transistor to the on state.

摘要翻译： 一种用于控制包括经由MOS传输晶体管连接到读节点的光电二极管的感光单元的方法，所述读节点经由MOS复位晶体管连接到参考电压源，周期性地包括等待阶段， 光电二极管与参考电压隔离; 光电二极管的电压从复位电压到取决于照明的有用电压的积分阶段; 以及读取代表有用电压的电压的相位，其中在等待阶段结束时读取节点的光电二极管的隔离包括将传输晶体管设置为导通状态的步骤，复位晶体管截止; 关闭传输晶体管; 并将复位晶体管设置为导通状态。

公开(公告)号：US07417268B2

公开(公告)日：2008-08-26

申请号：US11490308

申请日：2006-07-20

申请人： Yvon Cazaux ,  Didier Herault

发明人： Yvon Cazaux ,  Didier Herault

IPC分类号： H01L27/148

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/1469

摘要： An image sensor including a pixel assembly, each pixel including a photodiode and an access transistor connected to a read circuit, the photodiode and the access transistor being formed in and above a first semiconductor substrate, all or part of the read circuit being formed in a second semiconductor substrate, the second substrate being placed above the first substrate and separated therefrom by an intermediary insulating layer covering the access transistor, the photodiode receiving incident photons on its lower surface side opposite to the intermediary insulating layer.

摘要翻译： 一种图像传感器，包括像素组件，每个像素包括光电二极管和连接到读取电路的存取晶体管，所述光电二极管和存取晶体管形成在第一半导体衬底中和上方，全部或部分读取电路形成为 第二半导体衬底，第二衬底被放置在第一衬底之上，并通过覆盖存取晶体管的中间绝缘层与其隔开，光电二极管在其与中间绝缘层相对的下表面侧接收入射光子。