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    Controlled growth of single-wall carbon nanotubes
    1.
    发明授权
    Controlled growth of single-wall carbon nanotubes 有权
    单壁碳纳米管的控制生长

    公开(公告)号：US07357983B2

    公开(公告)日：2008-04-15

    申请号：US10328857

    申请日：2002-12-18

    Applicant: Lisa Pfefferle ,  Gary Haller ,  Dragos Ciuparu

    Inventor： Lisa Pfefferle ,  Gary Haller ,  Dragos Ciuparu

    IPC: B82B1/00

    CPC classification number: B82Y30/00 ,  D01F9/127 ,  Y10S977/843 ,  Y10T428/249929 ,  Y10T428/2918 ,  Y10T428/292

    Abstract: A transition metal substituted, amorphous mesoporous silica framework with a high degree of structural order and a narrow pore diameter distribution (±0.15 nm FWHM) was synthesized and used for the templated growth of single walled carbon nanotubes (SWNT). The physical properties of the SWNT (diameter, diameter distribution, electronic characteristic) can be controlled by the template pore size and the pore wall chemistry. The SWNT can find applications, for example, in chemical sensors and nanoscale electronic devices, such as transistors and crossbar switches.

    Abstract translation: 合成了具有高度结构顺序和窄孔径分布（±0.15nm FWHM）的过渡金属取代的无定形介孔二氧化硅骨架，用于单壁碳纳米管（SWNT）的模板生长。 SWNT的物理性质（直径，直径分布，电子特性）可以通过模板孔径和孔壁化学性质来控制。 SWNT可以在例如晶体管和交叉开关的化学传感器和纳米级电子器件中找到应用。

    Growth of boron nanostructures with controlled diameter
    3.
    发明授权
    Growth of boron nanostructures with controlled diameter 有权
    具有受控直径的硼纳米结构的生长

    公开(公告)号：US07884450B2

    公开(公告)日：2011-02-08

    申请号：US12413275

    申请日：2009-03-27

    Applicant: Lisa Pfefferle ,  Dragos Ciuparu

    Inventor： Lisa Pfefferle ,  Dragos Ciuparu

    IPC: H01L39/08 ,  H01L39/10

    CPC classification number: C01B35/023 ,  B82Y10/00 ,  B82Y30/00 ,  C01B35/04 ,  H01L39/141 ,  H01L39/2487 ,  Y10S505/704 ,  Y10S977/762 ,  Y10S977/812 ,  Y10S977/822 ,  Y10S977/932 ,  Y10T428/12528

    Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.

    Abstract translation: 描述了具有受控直径和受控化学（例如组成，掺杂）以及物理（例如电和超导）性质的硼基纳米结构（例如纳米管和纳米线）的生长方法。 硼纳米结构在具有孔径小于约4nm的孔的金属取代的MCM-41模板上生长，并且可以在纳米结构生长期间或之后掺杂Ia族或IIa族电子给体元件。 基于磁化率测量的初步数据表明掺杂Mg的硼纳米管具有大约100K的超导转变温度。

    Superconducting boron nanostructures
    4.
    发明授权
    Superconducting boron nanostructures 有权
    超导硼纳米结构

    公开(公告)号：US07531892B2

    公开(公告)日：2009-05-12

    申请号：US11011504

    申请日：2004-12-13

    Applicant: Lisa Pfefferle ,  Dragos Ciuparu

    Inventor： Lisa Pfefferle ,  Dragos Ciuparu

    IPC: H01L39/12

    CPC classification number: C01B35/023 ,  B82Y10/00 ,  B82Y30/00 ,  C01B35/04 ,  H01L39/141 ,  H01L39/2487 ,  Y10S505/704 ,  Y10S977/762 ,  Y10S977/812 ,  Y10S977/822 ,  Y10S977/932 ,  Y10T428/12528

    Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.

    Abstract translation: 描述了具有受控直径和受控化学（例如组成，掺杂）以及物理（例如电和超导）性质的硼基纳米结构（例如纳米管和纳米线）的生长方法。 硼纳米结构在具有孔径小于约4nm的孔的金属取代的MCM-41模板上生长，并且可以在纳米结构生长期间或之后掺杂Ia族或IIa族电子给体元件。 基于磁化率测量的初步数据表明掺杂Mg的硼纳米管具有大约100K的超导转变温度。

    Growth of nanostructures with controlled diameter
    5.
    发明授权
    Growth of nanostructures with controlled diameter 有权
    具有受控直径的纳米结构的生长

    公开(公告)号：US07485279B2

    公开(公告)日：2009-02-03

    申请号：US10726394

    申请日：2003-12-02

    Applicant: Lisa Pfefferle ,  Gary Haller ,  Dragos Ciuparu

    Inventor： Lisa Pfefferle ,  Gary Haller ,  Dragos Ciuparu

    IPC: D01F9/12

    CPC classification number: B82Y30/00 ,  D01F9/127 ,  Y10S977/842

    Abstract: Transition metal-substituted MCM-41 framework structures with a high degree of structural order and a narrow pore diameter distribution were reproducibly synthesized by a hydrothermal method using a surfactant and an anti-foaming agent. The pore size and the mesoporous volume depend linearly on the surfactant chain length. The transition metals, such as cobalt, are incorporated substitutionally and highly dispersed in the silica framework. Single wall carbon nanotubes with a narrow diameter distribution that correlates with the pore diameter of the catalytic framework structure were prepared by a Boudouard reaction. Nanostructures with a specified diameter or cross-sectional area can therefore be predictably prepared by selecting a suitable pore size of the framework structure.

    Abstract translation: 通过使用表面活性剂和消泡剂的水热法可重复合成具有高度结构顺序和窄孔径分布的过渡金属取代的MCM-41骨架结构。 孔径和介孔体积与表面活性剂链长度呈线性关系。 过渡金属，例如钴，被代替并且高度分散在二氧化硅骨架中。 通过Boudouard反应制备具有与催化骨架结构的孔直径相关的窄直径分布的单壁碳纳米管。 因此，可以通过选择合适的骨架结构孔径来预测具有特定直径或横截面面积的纳米结构。

    Growth of Boron Nanostructures with Controlled Diameter
    6.
    发明申请
    Growth of Boron Nanostructures with Controlled Diameter 有权
    具有受控直径的硼纳米结构的生长

    公开(公告)号：US20090253580A1

    公开(公告)日：2009-10-08

    申请号：US12413275

    申请日：2009-03-27

    Applicant: Lisa Pfefferle ,  Dragos Ciuparu

    Inventor： Lisa Pfefferle ,  Dragos Ciuparu

    IPC: H01L39/12

    CPC classification number: C01B35/023 ,  B82Y10/00 ,  B82Y30/00 ,  C01B35/04 ,  H01L39/141 ,  H01L39/2487 ,  Y10S505/704 ,  Y10S977/762 ,  Y10S977/812 ,  Y10S977/822 ,  Y10S977/932 ,  Y10T428/12528

    Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.

    Abstract translation: 描述了具有受控直径和受控化学（例如组成，掺杂）以及物理（例如电和超导）性质的硼基纳米结构（例如纳米管和纳米线）的生长方法。 硼纳米结构在具有孔径小于约4nm的孔的金属取代的MCM-41模板上生长，并且可以在纳米结构生长期间或之后掺杂Ia族或IIa族电子给体元件。 基于磁化率测量的初步数据表明掺杂Mg的硼纳米管具有大约100K的超导转变温度。

    SIZE-CONTROLLABLE TRANSITION METAL CLUSTERS IN MCM-41 FOR IMPROVING CHEMICAL CATALYSIS
    8.
    发明申请
    SIZE-CONTROLLABLE TRANSITION METAL CLUSTERS IN MCM-41 FOR IMPROVING CHEMICAL CATALYSIS 审中-公开
    用于改进化学催化的MCM-41中的尺寸可控的过渡金属聚集体

    公开(公告)号：US20090325790A1

    公开(公告)日：2009-12-31

    申请号：US11630023

    申请日：2005-06-17

    Applicant: Gary L. Haller ,  Sangyun Lim ,  Dragos Ciuparu ,  Yuan Chen ,  Yanhui Yang ,  Lisa Pfefferle

    Inventor： Gary L. Haller ,  Sangyun Lim ,  Dragos Ciuparu ,  Yuan Chen ,  Yanhui Yang ,  Lisa Pfefferle

    IPC: B01J21/08

    CPC classification number: C01B37/005

    Abstract: A metal-substituted mesoporous oxide framework, such as Co-MCM-41, are disclosed which includes more than one ion species with different reduction kinetics. The reducibility correlates strongly with the pore radius of curvature, with the metal ions incorporated in smaller pores more resistant to complete reduction. The metal-ion substituted oxide framework improves catalytic processes by controlling the size of the catalytic particles forming in the pores. The metal-substituted mesoporous oxide framework can be employed in selective hydrogenation of organic chemicals, in ammonia synthesis, and in automotive catalytic exhaust systems.

    Abstract translation: 公开了一种金属取代的中孔氧化物骨架，例如Co-MCM-41，其包含多于一种具有不同还原动力学的离子种类。 还原性与孔径曲率密切相关，金属离子掺入更小的孔隙中，更能抵抗完全还原。 金属离子取代的氧化物框架通过控制在孔中形成的催化颗粒的尺寸来改善催化过程。 金属取代的中孔氧化物骨架可用于有机化学品，氨合成和汽车催化排气系统的选择性氢化。

    Growth of boron nanostructures with controlled diameter
    10.
    发明申请
    Growth of boron nanostructures with controlled diameter 有权
    具有受控直径的硼纳米结构的生长

    公开(公告)号：US20050256006A1

    公开(公告)日：2005-11-17

    申请号：US11011504

    申请日：2004-12-13

    Applicant: Lisa Pfefferle ,  Dragos Ciuparu

    Inventor： Lisa Pfefferle ,  Dragos Ciuparu

    IPC: C01B35/02 ,  C01B35/04 ,  C04B2/00 ,  H01L39/14 ,  H01L39/24

    CPC classification number: C01B35/023 ,  B82Y10/00 ,  B82Y30/00 ,  C01B35/04 ,  H01L39/141 ,  H01L39/2487 ,  Y10S505/704 ,  Y10S977/762 ,  Y10S977/812 ,  Y10S977/822 ,  Y10S977/932 ,  Y10T428/12528

    Abstract: A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.

    Abstract translation: 描述了具有受控直径和受控化学（例如组成，掺杂）以及物理（例如电和超导）性质的硼基纳米结构（例如纳米管和纳米线）的生长方法。 硼纳米结构在具有孔径小于约4nm的孔的金属取代的MCM-41模板上生长，并且可以在纳米结构生长期间或之后掺杂Ia族或IIa族电子给体元件。 基于磁化率测量的初步数据表明掺杂Mg的硼纳米管具有大约100K的超导转变温度。

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