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25 条记录 (耗时 0.018 秒)

    Growth of Boron Nanostructures with Controlled Diameter
    6.
    发明申请
    Growth of Boron Nanostructures with Controlled Diameter 有权
    具有受控直径的硼纳米结构的生长

    公开(公告)号：US20090253580A1

    公开(公告)日：2009-10-08

    申请号：US12413275

    申请日：2009-03-27

    申请人： Lisa Pfefferle ,  Dragos Ciuparu

    发明人： Lisa Pfefferle ,  Dragos Ciuparu

    IPC分类号： H01L39/12

    CPC分类号： C01B35/023 ,  B82Y10/00 ,  B82Y30/00 ,  C01B35/04 ,  H01L39/141 ,  H01L39/2487 ,  Y10S505/704 ,  Y10S977/762 ,  Y10S977/812 ,  Y10S977/822 ,  Y10S977/932 ,  Y10T428/12528

    摘要： A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.

    摘要翻译： 描述了具有受控直径和受控化学（例如组成，掺杂）以及物理（例如电和超导）性质的硼基纳米结构（例如纳米管和纳米线）的生长方法。 硼纳米结构在具有孔径小于约4nm的孔的金属取代的MCM-41模板上生长，并且可以在纳米结构生长期间或之后掺杂Ia族或IIa族电子给体元件。 基于磁化率测量的初步数据表明掺杂Mg的硼纳米管具有大约100K的超导转变温度。

    Growth of boron nanostructures with controlled diameter
    7.
    发明授权
    Growth of boron nanostructures with controlled diameter 有权
    具有受控直径的硼纳米结构的生长

    公开(公告)号：US07884450B2

    公开(公告)日：2011-02-08

    申请号：US12413275

    申请日：2009-03-27

    申请人： Lisa Pfefferle ,  Dragos Ciuparu

    发明人： Lisa Pfefferle ,  Dragos Ciuparu

    IPC分类号： H01L39/08 ,  H01L39/10

    CPC分类号： C01B35/023 ,  B82Y10/00 ,  B82Y30/00 ,  C01B35/04 ,  H01L39/141 ,  H01L39/2487 ,  Y10S505/704 ,  Y10S977/762 ,  Y10S977/812 ,  Y10S977/822 ,  Y10S977/932 ,  Y10T428/12528

    摘要： A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.

    摘要翻译： 描述了具有受控直径和受控化学（例如组成，掺杂）以及物理（例如电和超导）性质的硼基纳米结构（例如纳米管和纳米线）的生长方法。 硼纳米结构在具有孔径小于约4nm的孔的金属取代的MCM-41模板上生长，并且可以在纳米结构生长期间或之后掺杂Ia族或IIa族电子给体元件。 基于磁化率测量的初步数据表明掺杂Mg的硼纳米管具有大约100K的超导转变温度。

    Superconducting boron nanostructures
    9.
    发明授权
    Superconducting boron nanostructures 有权
    超导硼纳米结构

    公开(公告)号：US07531892B2

    公开(公告)日：2009-05-12

    申请号：US11011504

    申请日：2004-12-13

    申请人： Lisa Pfefferle ,  Dragos Ciuparu

    发明人： Lisa Pfefferle ,  Dragos Ciuparu

    IPC分类号： H01L39/12

    CPC分类号： C01B35/023 ,  B82Y10/00 ,  B82Y30/00 ,  C01B35/04 ,  H01L39/141 ,  H01L39/2487 ,  Y10S505/704 ,  Y10S977/762 ,  Y10S977/812 ,  Y10S977/822 ,  Y10S977/932 ,  Y10T428/12528

    摘要： A process for growth of boron-based nanostructures, such as nanotubes and nanowires, with a controlled diameter and with controlled chemical (such as composition, doping) as well as physical (such as electrical and superconducting) properties is described. The boron nanostructures are grown on a metal-substituted MCM-41 template with pores having a uniform pore diameter of less than approximately 4 nm, and can be doped with a Group Ia or Group IIa electron donor element during or after growth of the nanostructure. Preliminary data based on magnetic susceptibility measurements suggest that Mg-doped boron nanotubes have a superconducting transition temperature on the order of 100 K.

    摘要翻译： 描述了具有受控直径和受控化学（例如组成，掺杂）以及物理（例如电和超导）性质的硼基纳米结构（例如纳米管和纳米线）的生长方法。 硼纳米结构在具有孔径小于约4nm的孔的金属取代的MCM-41模板上生长，并且可以在纳米结构生长期间或之后掺杂Ia族或IIa族电子给体元件。 基于磁化率测量的初步数据表明掺杂Mg的硼纳米管具有大约100K的超导转变温度。

    Four-terminal system for reading the state of a phase qubit
    10.
    发明申请
    Four-terminal system for reading the state of a phase qubit 有权
    用于读取相位量子位状态的四端系统

    公开(公告)号：US20020179939A1

    公开(公告)日：2002-12-05

    申请号：US10194704

    申请日：2002-07-12

    发明人： Zdravko Ivanov ,  Alexander Tzalentchuk ,  Jeremy P. Hilton ,  Alexander Maassen van den Brink

    IPC分类号： H01L031/072

    CPC分类号： G06N99/002 ,  B82Y10/00 ,  H01L39/225 ,  Y10S977/70 ,  Y10S977/812 ,  Y10S977/838 ,  Y10S977/933 ,  Y10S977/96

    摘要： Quantum computing systems and methods that use opposite magnetic moment states read the state of a qubit by applying current through the qubit and measuring a Hall effect voltage across the width of the current. For reading, the qubit is grounded to freeze the magnetic moment state, and the applied current is limited to pulses incapable of flipping the magnetic moment. Measurement of the Hall effect voltage can be achieved with an electrode system that is capacitively coupled to the qubit. An insulator or tunnel barrier isolates the electrode system from the qubit during quantum computing. The electrode system can include a pair of electrodes for each qubit. A readout control system uses a voltmeter or other measurement device that connects to the electrode system, a current source, and grounding circuits. For a multi-qubit system, selection logic can select which qubit or qubits are read.

    摘要翻译： 使用相反磁矩状态的量子计算系统和方法通过在电流上施加电流并测量电流宽度上的霍尔效应电压来读取量子位的状态。 为了读取，量子位接地，以冻结磁矩状态，施加的电流限于不能翻转磁矩的脉冲。 可以通过电容耦合到量子位的电极系统来实现霍尔效应电压的测量。 绝缘体或隧道势垒在量子计算过程中将电极系统与量子位隔离。 电极系统可以包括用于每个量子位的一对电极。 读出控制系统使用连接到电极系统，电流源和接地电路的电压表或其它测量装置。 对于多量子位系统，选择逻辑可以选择读取哪个量子位或量子位。