公开(公告)号：US3943555A

公开(公告)日：1976-03-09

申请号：US466287

申请日：1974-05-02

申请人： Charles William Mueller ,  Edward Curtis Douglas

发明人： Charles William Mueller ,  Edward Curtis Douglas

IPC分类号： H01L29/73 ,  H01L21/00 ,  H01L21/331 ,  H01L21/762 ,  H01L21/86 ,  H01L27/00 ,  H01L29/00 ,  H01L27/12 ,  H01L21/265 ,  H01L29/72

CPC分类号： H01L27/00 ,  H01L21/00 ,  H01L21/76264 ,  H01L21/86 ,  H01L29/00 ,  H01L21/76289

摘要： A planar bipolar transistor is made by the successive ion implantations of selected atoms into selected regions of a layer of doped single-crystal silicon on an insulating substrate, such as sapphire or spinel. The silicon layer is epitaxially grown, has a thickness of between 0.5 and 5 .mu.m, and is formed in two strata of different resistivities. A collector contact well is ion implanted into the upper stratum and annealed to diffuse it into the lower stratum of lower resistivity. The transistor is isolated, as a mesa, on the substrate; and an edge-guard region is ion implanted through the periphery of the mesa, except in the region of the emitter-base junction.

摘要翻译： 平面双极晶体管通过在绝缘衬底（例如蓝宝石或尖晶石）上的所选原子的连续离子注入到掺杂单晶硅层的选定区域中而制成。 硅层外延生长，厚度为0.5〜5μm，形成为两层不同的电阻率。 将集电极接触阱离子注入上层，并退火以将其扩散到较低电阻率的较低层。 晶体管作为台面隔离在衬底上; 并且除了在发射极 - 基极结的区域之外，通过台面的周边离子注入边缘保护区域。

公开(公告)号：US3933530A

公开(公告)日：1976-01-20

申请号：US544702

申请日：1975-01-28

申请人： Charles William Mueller ,  Edward Curtis Douglas ,  Chung Pao Wu

发明人： Charles William Mueller ,  Edward Curtis Douglas ,  Chung Pao Wu

IPC分类号： H01L21/3115 ,  H01L29/00 ,  H01L21/265

CPC分类号： H01L21/31155 ,  H01L29/00 ,  Y10S257/906 ,  Y10S438/953

摘要： In one embodiment, a semiconductor device, such as an insulated-gate-field-effect-transistor (IGFET), is simultaneously radiation hardened with Al ions and its threshold voltage stabilized with halide ions, such as Cl ions, by bombarding a silicon dioxide gate insulator of the device with molecular ions of an aluminum halide, such as AlCl.sub.2 .sup.+ ions. In another embodiment, a surface (target) of silicon is bombarded with molecular AlCl.sub.2 .sup.+ ions to ion implant separate Al ions and Cl ions. There, an oxide layer subsequently thermally grown on the bombarded surface includes the Al ions and the Cl ions, and the oxide layer is radiation hardened and gettered.

摘要翻译： 在一个实施例中，诸如绝缘栅场效应晶体管（IGFET）的半导体器件同时被Al离子放射硬化，并且其阈值电压通过用二氧化硅轰击而被诸如Cl离子的卤素离子稳定 具有铝卤化物的分子离子的器件的栅极绝缘体，例如AlCl 2 +离子。 在另一个实施方案中，硅的表面（靶）用分子AlCl 2+轰击离子注入分离的Al离子和Cl离子。 在那里，随后在轰击表面上热生长的氧化物层包括Al离子和Cl离子，并且氧化物层被辐射硬化和吸收。

公开(公告)号：US3974560A

公开(公告)日：1976-08-17

申请号：US617717

申请日：1975-09-29

申请人： Charles William Mueller ,  Edward Curtis Douglas

发明人： Charles William Mueller ,  Edward Curtis Douglas

IPC分类号： H01L21/00 ,  H01L21/762 ,  H01L27/00 ,  H01L29/00 ,  B01J17/00

CPC分类号： H01L27/00 ,  H01L21/00 ,  H01L21/76264 ,  H01L29/00 ,  H01L21/76289 ,  Y10S148/051 ,  Y10S148/053 ,  Y10S148/15

摘要： A planar bipolar transistor is made by the successive ion implantations of selected atoms into selected regions of a layer of doped single-crystal silicon on an insulating substrate, such as sapphire or spinel. The silicon layer is epitaxially grown, has a thickness of between 0.5 and 5 .mu.m, and is formed in two strata of different resistivities. A collector contact well is ion implanted into the upper stratum and annealed to diffuse it into the lower stratum of lower resistivity. The transistor is isolated, as a mesa, on the substrate; and an edge-guard region is ion implanted through the periphery of the mesa, except in the region of the emitter-base junction.

摘要翻译： 平面双极晶体管通过在绝缘衬底（例如蓝宝石或尖晶石）上的所选原子的连续离子注入到掺杂单晶硅层的选定区域中而制成。 硅层外延生长，厚度为0.5〜5μm，形成为两层不同的电阻率。 将集电极接触阱离子注入上层，并退火以将其扩散到较低电阻率的较低层。 晶体管作为台面隔离在衬底上; 并且除了在发射极 - 基极结的区域之外，通过台面的周边离子注入边缘保护区域。

公开(公告)号：US3976377A

公开(公告)日：1976-08-24

申请号：US546778

申请日：1975-02-03

申请人： Chung Pao Wu ,  Edward Curtis Douglas ,  Charles William Mueller

发明人： Chung Pao Wu ,  Edward Curtis Douglas ,  Charles William Mueller

IPC分类号： G01B11/02 ,  G01R31/26 ,  G01B9/02

CPC分类号： G01B11/02 ,  G01R31/2637

摘要： A method of obtaining a distribution profile of electrically active ions, of one type conductivity, implanted into a semiconductor, of an opposite type conductivity, is carried out with the aid of an integral target of the semiconductor. The integral target is formed with a plurality of doped regions of different background impurity concentrations, respectively, therein. Each of the operations of annealing, angle-lapping, and staining the doped regions to determine P-N junction depths therein is carried out on all of the doped regions simultaneously. An enlarged photograph of the stained angle-lapped portions of the doped regions provides directly a histogram of the distribution profile.

摘要翻译： 借助于半导体的整体目标，获得一种获得具有相反类型导电性的注入到半导体中的一种导电类型的电活性离子的分布曲线的方法。 积分靶分别在其中分别形成有多个不同背景杂质浓度的掺杂区域。 在所有掺杂区域上同时进行退火，角度研磨和染色掺杂区域以确定其中P-N结深度的每个操作。 掺杂区域的染色角度重叠部分的放大照片直接提供了分布曲线的直方图。