利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.011 秒)

    Fabrication based on radiation sensitive resists and related products
    1.
    发明授权
    Fabrication based on radiation sensitive resists and related products 失效
    基于辐射敏感抗蚀剂及相关产品的制造

    公开(公告)号：US4208211A

    公开(公告)日：1980-06-17

    申请号：US908791

    申请日：1978-05-23

    申请人： Murrae J. S. Bowden ,  Eugene D. Feit ,  Larry F. Thompson ,  Cletus W. Wilkins, Jr.

    发明人： Murrae J. S. Bowden ,  Eugene D. Feit ,  Larry F. Thompson ,  Cletus W. Wilkins, Jr.

    IPC分类号： G03F7/20 ,  C08F12/00 ,  C08F20/00 ,  C08F20/32 ,  G03C5/08 ,  G03F7/004 ,  G03F7/038 ,  H01L21/027 ,  G03C5/00

    CPC分类号： G03F7/038

    摘要： Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u.v. may be used.

    摘要翻译： 对于集成电路的干法处理具有必要稳定性的辐射敏感负性抗蚀剂由含有卤素原子的芳族部分聚合。 通常为碳质的卤素芳基桥接增加了对辐射的敏感性。 示例性材料，由芳族和甲基丙烯酸缩水甘油酯（GMA）共聚物制备的共聚物适用于大规模集成电路的直接处理。 虽然电子束图案被设想用于直接处理和掩模制作，但是诸如X射线和深紫外线的辐射。 可能用过了。

    Lithographic fabrication with treatment of
    2.
    发明授权
    Lithographic fabrication with treatment of "living polymer" 失效
    用“活性聚合物”处理的平版印刷

    公开(公告)号：US4201580A

    公开(公告)日：1980-05-06

    申请号：US926877

    申请日：1978-07-24

    申请人： Eugene D. Feit

    发明人： Eugene D. Feit

    IPC分类号： G03F7/038 ,  G03C5/00 ,  G03C1/68

    CPC分类号： G03F7/038 ,  Y10S430/143 ,  Y10S430/167

    摘要： Fabrication of fine dimensioned circuits, e.g., VLSI includes at least one lithographic step dependent upon members of a particular category of polymer resists. Such resists, generally negative acting, are characterized by high contrast due to unusually narrow molecular weight distribution of the polymer molecules. This distribution is in turn dependent upon choice of a base polymer which is itself characterized by narrow molecular weight distribution due to "living polymerization" (solution anionic, polymerization). Functionalization of such base polymer is designedly such as to retain narrow distribution. Chlorinated polystyrene is exemplary of the resist category.

    摘要翻译： 诸如VLSI的精细尺寸的电路的制造包括依赖于特定类别的聚合物抗蚀剂的成员的至少一个光刻步骤。 由于聚合物分子的非常窄的分子量分布，这种通常为负作用的抗蚀剂的特征在于高对比度。 这种分布又依赖于由于“活性聚合”（阴离子溶液，聚合）本身以窄分子量分布为特征的基础聚合物的选择。 这种基础聚合物的功能化被设计成保持狭窄的分布。 氯化聚苯乙烯是抗蚀剂类别的典型。

    Process using radiation curable epoxy containing resist and resultant product
    3.
    发明授权
    Process using radiation curable epoxy containing resist and resultant product 失效
    使用含辐射固化型环氧树脂的抗蚀剂和所得产物的方法

    公开(公告)号：US4130424A

    公开(公告)日：1978-12-19

    申请号：US812231

    申请日：1977-07-01

    申请人： Eugene D. Feit ,  Larry F. Thompson

    发明人： Eugene D. Feit ,  Larry F. Thompson

    IPC分类号： G03F7/038 ,  G03F7/039 ,  H01L21/027 ,  G03C1/71

    CPC分类号： G03F7/038

    摘要： Negative resist compositions are based on carbonaceous polymers with substituent branches containing epoxy groupings. Exemplary materials which include, for example, a copolymer of glycidyl methacrylate and ethyl acrylate in which epoxy groupings are unesterified show high sensitivity, for example, to electron radiation and to X-rays. Resolution is sufficient to permit expedient fabrication of detailed resist patterns for integrated circuits. High adherence permits use of acid or base reagents and thermal stability permits use of ion milling for circuit fabrication.

    摘要翻译： 负型抗蚀剂组合物基于含有环氧基团的取代基支链的碳质聚合物。 包括例如环氧基团未酯化的甲基丙烯酸缩水甘油酯和丙烯酸乙酯的共聚物的示例性材料显示出例如电子辐射和X射线的高灵敏度。 分辨率足以允许为集成电路有利地制造详细的抗蚀剂图案。 高粘附性允许使用酸或碱试剂，热稳定性允许使用离子铣削进行电路制造。

    Fabrication based on radiation sensitive resists of halo-alkyl styrene polymers
    4.
    发明授权
    Fabrication based on radiation sensitive resists of halo-alkyl styrene polymers 失效
    基于卤代烷基苯乙烯聚合物的辐射敏感抗蚀剂的制备

    公开(公告)号：US4262081A

    公开(公告)日：1981-04-14

    申请号：US96435

    申请日：1979-11-21

    申请人： Murrae J. S. Bowden ,  Eugene D. Feit ,  Larry F. Thompson ,  Cletus W. Wilkins, Jr.

    发明人： Murrae J. S. Bowden ,  Eugene D. Feit ,  Larry F. Thompson ,  Cletus W. Wilkins, Jr.

    IPC分类号： G03F7/038 ,  G03C1/68 ,  G03C5/00

    CPC分类号： G03F7/038 ,  Y10S430/143 ,  Y10S430/167 ,  Y10S430/168

    摘要： Radiation sensitive negative resists with requisite stability for dry processing of integrated circuits are polymerized from aromatic moieties containing halogen atoms. Halogen-aryl bridging, generally carbonaceous, increases sensitivity to radiation. Exemplary materials, copolymers prepared from aromatic and glycidyl methacrylate (GMA) comonomers, are suitable for direct processing of large-scale integrated circuits. While electron beam patterning is contemplated both for direct processing and mask making, radiation such as X-ray and deep u.v. may be used.

    摘要翻译： 对于集成电路的干法处理具有必要稳定性的辐射敏感负性抗蚀剂由含有卤素原子的芳族部分聚合。 通常为碳质的卤素芳基桥接增加了对辐射的敏感性。 示例性材料，由芳族和甲基丙烯酸缩水甘油酯（GMA）共聚物制备的共聚物适用于大规模集成电路的直接处理。 虽然电子束图案被设想用于直接处理和掩模制作，但是诸如X射线和深紫外线的辐射。 可能用过了。