公开(公告)号：US5503677A

公开(公告)日：1996-04-02

申请号：US340910

申请日：1994-11-15

申请人： Ewald Morsen ,  Helge Vogt ,  Johannes Segner

发明人： Ewald Morsen ,  Helge Vogt ,  Johannes Segner

IPC分类号： C23C16/44 ,  C03C17/00 ,  C23C16/04 ,  C23C16/455 ,  C23C16/50 ,  C23C16/511 ,  C23C16/515 ,  C23C16/00

CPC分类号： C23C16/455 ,  C03C17/004 ,  C23C16/045

摘要： A process and a device for coating the inner surface of a greatly arched, essentially dome-shaped substrate by CVD are described. In the process, the reaction gases, which contain the layer-former molecules, are conveyed into the reaction chamber containing the substrate(s) to be coated, through at least one gas inlet, placed facing the vertex of the dome at a distance from the surface to be coated. Deposition of the layer material on the substrate is brought about in a way known in the art by producing a reaction zone on the inner surface of the substrate to be coated. According to the invention, the reaction gases do not, as is usual for known processes, flow slowly into the reaction chamber. Instead, for production of a uniform coating, the reaction gases are introduced into the reaction chamber at a high speed such that the product of Reynolds number, R, of the gas jet in or in the immediate vicinity of the gas inlet and the distance, h, between the gas inlet and the dome vertex is:400

摘要翻译： 描述了通过CVD涂覆大拱形基本圆顶形基底的内表面的方法和装置。 在此过程中，将包含成层分子的反应气体通过至少一个气体入口输送到含有待涂覆的基材的反应室中，该入口面向圆顶顶点放置一定距离 待涂层的表面。 通过在待涂覆的基材的内表面上产生反应区，以本领域已知的方式使层材料沉积在基材上。 根据本发明，如已知方法通常，反应气体不会缓慢地流入反应室。 相反，为了生产均匀的涂层，反应气体以高速被引入反应室，使得在气体入口处或其附近的气体射流的雷诺数R的乘积和距离， h，气体入口和圆顶顶点之间为：400

公开(公告)号：US5308650A

公开(公告)日：1994-05-03

申请号：US909366

申请日：1992-07-06

申请人： Harald Krummel ,  Ewald Morsen ,  Volker Paquet ,  Helge Vogt ,  Gunther Weidmann

发明人： Harald Krummel ,  Ewald Morsen ,  Volker Paquet ,  Helge Vogt ,  Gunther Weidmann

IPC分类号： C23C4/00 ,  C23C16/50 ,  C23C16/511 ,  C23C16/515 ,  H01J37/32 ,  H01L21/31 ,  H05B7/18 ,  H05H1/24 ,  H05H1/46 ,  C23C14/24

CPC分类号： H01J37/32192 ,  H01J37/32009 ,  H05H1/46 ,  H01J2237/3321

摘要： A process and an apparatus for economically igniting microwave plasmas wherein no undesirable reaction products in the reaction chamber impair the quality of cladding produced thereby. The plasma is ignited on the gas outlet side of the reaction chamber by means of a high voltage that is applied at least for a short period of time. High-frequency pulses or low-frequency high voltages with frequencies in the range from 10 to 100 kHz are utilized. The high voltage is synchronized with the microwave pulses. According to a further process, the microwave pulses are excessively increased for a short time at least at their beginning. Also periodic excessive increases of the microwave pulses are possible A switchable high-voltage source is connected by way of a delay member and a current supply unit to the microwave device The output of the switchable high-voltage source is applied to the gas discharge line of the reaction chamber.

摘要翻译： 用于经济地点燃微波等离子体的方法和装置，其中在反应室中没有不期望的反应产物损害由此产生的包层的质量。 等离子体通过至少施加短时间的高电压在反应室的气体出口侧点燃。 使用频率在10到100 kHz范围内的高频脉冲或低频高电压。 高电压与微波脉冲同步。 根据进一步的处理，微波脉冲至少在其开始时，在短时间内过度增加。 微波脉冲的周期性过度增加也可以通过延迟构件和电流供给单元将可切换高压源连接到微波装置。可切换高压源的输出被施加到 反应室。

公开(公告)号：US5480488A

公开(公告)日：1996-01-02

申请号：US141363

申请日：1993-10-28

申请人： Hans J. Bittner ,  Hans-Jurgen Klein ,  Thomas Kupper ,  Ewald Morsen

发明人： Hans J. Bittner ,  Hans-Jurgen Klein ,  Thomas Kupper ,  Ewald Morsen

IPC分类号： C23C16/448 ,  B05C11/02 ,  B05C11/10 ,  C23C16/52

CPC分类号： C23C16/448

摘要： An apparatus supplies CVD coating devices with coating gas and includes an intermediate reservoir for accommodation of the gaseous coating material arranged between a storage tank and a coating device. The volume of the reservoir is set to a predetermined, maximum pressure change in the intermediate reservoir upon withdrawal of the mass of gas required for a coating step. The intermediate reservoir can be connected to a gas recovery station.

摘要翻译： 一种装置为CVD涂覆装置提供涂覆气体，并且包括用于容纳布置在储罐和涂覆装置之间的气态涂料的中间储存器。 在抽出涂布步骤所需的气体质量时，储存器的体积被设定为中间储存器中预定的最大压力变化。 中间储存器可以连接到气体回收站。

公开(公告)号：US5300901A

公开(公告)日：1994-04-05

申请号：US910879

申请日：1992-07-10

申请人： Harald Krummel ,  Ewald Morsen ,  Helge Vogt ,  Gunter Weidmann

发明人： Harald Krummel ,  Ewald Morsen ,  Helge Vogt ,  Gunter Weidmann

IPC分类号： H01J23/20 ,  H01J37/32 ,  H01P1/28 ,  H01P1/30 ,  H01P3/06 ,  H01P5/02 ,  H01P5/08 ,  H01P5/103 ,  H01P7/04 ,  H05H1/46

CPC分类号： H05H1/46 ,  H01J37/32 ,  H01P5/02 ,  H01P5/103

摘要： An arrangement for coupling microwave energy with a reaction chamber, including electrically stable tuning and being, within limits, tolerant against changes in critical dimensions and power fluctuations. A coaxial line between a hollow waveguide and the reaction chamber is of such a structure that it forms, at least together with the reaction chamber, a loss resonator for the microwave frequency employed. The coaxial line can comprise an absorber or, alternatively, can be made of a poorly conductive material. There is also the possibility of downgrading the quality of the resonator by leaving an annular gap between a metal plate and an outer conductor section.

摘要翻译： 用于将微波能量与反应室耦合的装置，包括电稳定的调谐并且在限度内容许关键尺寸和功率波动的变化。 中空波导和反应室之间的同轴线具有至少与反应室一起形成用于所用微波频率的损耗谐振器的结构。 同轴线可以包括吸收体，或者可以由导电性差的材料制成。 也可能通过在金属板和外部导体部分之间留下环形间隙来降低谐振器的质量。