Sputtering Target
    1.
    发明申请

    公开(公告)号:US20230044831A1

    公开(公告)日:2023-02-09

    申请号:US17816781

    申请日:2022-08-02

    IPC分类号: C23C14/35 H01J37/34

    摘要: A multiple sputtering target for magnetron arrangements has a tubular magnetron, for coating substrates in a vacuum chamber. The tubular magnetron is mounted in an end block or some other drive unit. A magnet bar is located in the tubular magnetron. Substrates transported along a circular path through a vacuum chamber can be coated with a selectable multiplicity of materials by magnetron sputtering. At least one polygonal carrier tube having an angular cross section has a plurality of longitudinally extending outer surfaces for receiving targets. A free extends longitudinally through the polygonal carrier tube. A magnet bar for forming plasma clouds outside the polygonal carrier tube is located in a working position in front of a target which can be selected by rotating the polygonal carrier tube. The moving or stationary substrate is located at a predetermined distance in front of the plasma clouds.

    METHOD AND DEVICE FOR HOMOGENEOUSLY COATING 3D SUBSTRATES

    公开(公告)号:US20190078197A1

    公开(公告)日:2019-03-14

    申请号:US16129039

    申请日:2018-09-12

    IPC分类号: C23C14/34 C23C14/56 C23C14/54

    摘要: A method and a device are provided for homogeneously coating surfaces of 3D substrates in a vacuum chamber which has a sputtering source, such as a planar source or a tube or double-tube source, wherein individual substrates, with a curved substrate surface directed toward the sputtering source, are able to be moved past said source in a translational manner. The sputtering source is fastened to a chamber wall within a vacuum chamber so as to have two degrees of freedom such that the sputtering source is able to be set both in terms of its spacing to a surface to be coated of a substrate, which is moved past in front of said sputtering source in a translational manner, and with respect to the surface normal of the surface to be coated proceeding from a fixed point such that the surface normal deviation is 0° at all times.

    ASSEMBLY FOR FEEDING IN HF CURRENT FOR TUBULAR CATHODES
    3.
    发明申请
    ASSEMBLY FOR FEEDING IN HF CURRENT FOR TUBULAR CATHODES 有权
    用于馈送管状阴极的HF电流的组件

    公开(公告)号:US20140332375A1

    公开(公告)日:2014-11-13

    申请号:US14357285

    申请日:2012-11-09

    IPC分类号: H01J37/34

    摘要: An arrangement is provided for feeding in HF current for rotatable tubular cathodes in a vacuum chamber of a plasma coating system as well as a high frequency current source. Located inside the tubular cathode is a magnet arrangement that extends along said tubular cathode for generating a magnetic field. The arrangement enables a low loss infeed of HF current, so that a particularly homogeneous sputter removal from the tubular cathode is guaranteed. The HF current source is coupled to the tubular cathode inside the vacuum chamber by a capacitive infeed of HF current in the form of a coupling capacitor. The coupling capacitor includes a part of the surface of the tubular cathode and a metal plate or metal film that surrounds the tubular cathode, at least partially, at a specified distance.

    摘要翻译: 提供了用于在等离子体涂覆系统的真空室中的可旋转管状阴极以及高频电流源中馈送HF电流的装置。 位于管状阴极内的是沿着所述管状阴极延伸以产生磁场的磁体布置。 该布置能够实现HF电流的低损耗进给,从而保证从管状阴极的特别均匀的溅射去除。 HF电流源通过耦合电容器形式的HF电流的电容性进料耦合到真空室内的管状阴极。 耦合电容器包括管状阴极表面的一部分和至少部分地以特定距离围绕管状阴极的金属板或金属膜。

    Assembly for feeding in HF current for tubular cathodes
    4.
    发明授权
    Assembly for feeding in HF current for tubular cathodes 有权
    用于馈送管状阴极的HF电流的组件

    公开(公告)号:US09437403B2

    公开(公告)日:2016-09-06

    申请号:US14357285

    申请日:2012-11-09

    摘要: An arrangement is provided for feeding in HF current for rotatable tubular cathodes in a vacuum chamber of a plasma coating system as well as a high frequency current source. Located inside the tubular cathode is a magnet arrangement that extends along said tubular cathode for generating a magnetic field. The arrangement enables a low loss infeed of HF current, so that a particularly homogeneous sputter removal from the tubular cathode is guaranteed. The HF current source is coupled to the tubular cathode inside the vacuum chamber by a capacitive infeed of HF current in the form of a coupling capacitor. The coupling capacitor includes a part of the surface of the tubular cathode and a metal plate or metal film that surrounds the tubular cathode, at least partially, at a specified distance.

    摘要翻译: 提供了用于在等离子体涂覆系统的真空室中的可旋转管状阴极以及高频电流源中馈送HF电流的装置。 位于管状阴极内的是沿着所述管状阴极延伸以产生磁场的磁体布置。 该布置能够实现HF电流的低损耗进给,从而保证从管状阴极的特别均匀的溅射去除。 HF电流源通过耦合电容器形式的HF电流的电容性进料耦合到真空室内的管状阴极。 耦合电容器包括管状阴极的表面的一部分和至少部分地以特定距离围绕管状阴极的金属板或金属膜。

    PROCESS ROLLER FOR RECEIVING AND GUIDING SUBSTRATES IN STRIP FORM IN VACUUM COATING INSTALLATIONS
    5.
    发明申请
    PROCESS ROLLER FOR RECEIVING AND GUIDING SUBSTRATES IN STRIP FORM IN VACUUM COATING INSTALLATIONS 有权
    用于在真空涂装设备中接收和引导条形基板的过程滚子

    公开(公告)号:US20150122179A1

    公开(公告)日:2015-05-07

    申请号:US14377440

    申请日:2013-02-11

    IPC分类号: C23C14/56 C23C14/54

    摘要: A process roller for receiving and guiding substrates in strip form in vacuum coating installations. The process roller comprises a heater located inside the process roller, in the form of an elongated radiant heater, and also a cylindrical lateral surface for receiving a substrate in strip form, the process roller being mounted rotatably about an axis of rotation in a vacuum process chamber. A particularly uniform temperature distribution can be achieved on the process roller's lateral surface by the process roller (2) being configured in a vacuum-tight manner, by the lateral surface (3) of the process roller (2) being connected in a vacuum-tight manner to two end caps (4, 5), which have a flattened, outwardly curved hemispherical form, by the interior space of the process roller (2) being connected to a vacuum connection (6), and by the radiant heater (8) extending into the region of the end caps (4, 5).

    摘要翻译: 一种处理辊,用于在真空涂层装置中以带状形式接收和引导基板。 处理辊包括位于处理辊内部的加热器,呈细长辐射加热器的形式,以及用于接收带状形式的基板的圆柱形侧表面,处理辊可在真空过程中围绕旋转轴线可旋转地安装 房间。 通过处理辊(2)以真空密封的方式由处理辊(2)的侧表面(3)以真空密封的方式连接,可以在处理辊的侧表面上实现特别均匀的温度分布。 通过处理辊(2)的内部空间连接到真空连接(6)和由辐射加热器(8)连接到具有扁平的向外弯曲的半球形的两个端盖(4,5) )延伸到端盖(4,5)的区域中。

    VAPOR-DEPOSITION DEVICE FOR COATING TWO-DIMENSIONAL SUBSTRATES
    6.
    发明申请
    VAPOR-DEPOSITION DEVICE FOR COATING TWO-DIMENSIONAL SUBSTRATES 审中-公开
    用于涂覆二维基材的蒸气沉积装置

    公开(公告)号:US20150059646A1

    公开(公告)日:2015-03-05

    申请号:US14477500

    申请日:2014-09-04

    摘要: A vapor-deposition device for coating two-dimensional substrates with an organic material. The substrates can be positioned within a vacuum chamber above a process chamber or can be moved past the latter by a transport device. A vaporizer for an organic coating material is arranged within the process chamber and opposite the substrates. The process chamber is delimited laterally by shields which, opposite the substrates, extend as far as a feed device for the coating material. The vaporizer includes the feed device for the coating material and radiant heaters underneath the same. This arrangement can achieve, with a high vaporization rate, good homogeneity of the layer thickness and of the layer stoichiometry.

    摘要翻译: 一种用有机材料涂覆二维基材的气相沉积装置。 基板可以位于处理室上方的真空室内,或者可以通过输送装置移动通过该真空室。 用于有机涂层材料的蒸发器布置在处理室内并与衬底相对。 处理室由与基板相对延伸的屏蔽物侧向限定为用于涂层材料的进给装置。 蒸发器包括用于涂料的进料装置和其下面的辐射加热器。 这种布置可以以高的蒸发速率实现层厚度和层化学计量学的良好均匀性。

    METHOD AND DEVICE FOR HOMOGENEOUSLY COATING 3D SUBSTRATES

    公开(公告)号:US20210207260A1

    公开(公告)日:2021-07-08

    申请号:US17185397

    申请日:2021-02-25

    摘要: A method and a device are provided for homogeneously coating surfaces of 3D substrates in a vacuum chamber which has a sputtering source, such as a planar source or a tube or double-tube source, wherein individual substrates, with a curved substrate surface directed toward the sputtering source, are able to be moved past said source in a translational manner. The sputtering source is fastened to a chamber wall within a vacuum chamber so as to have two degrees of freedom such that the sputtering source is able to be set both in terms of its spacing to a surface to be coated of a substrate, which is moved past in front of said sputtering source in a translational manner, and with respect to the surface normal of the surface to be coated proceeding from a fixed point such that the surface normal deviation is 0° at all times.