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公开(公告)号：US6031643A
公开(公告)日：2000-02-29
申请号：US889544
申请日：1997-07-08
CPC分类号： G11B7/0065 , G03H1/0248 , G11B7/128 , G11B7/1362 , G11B7/1369
摘要： The present invention is a method for optical data storage which enhances the contrast between ON and OFF pixels. The method comprises writing a two-dimensional image comprising a plurality of pixels into a recording medium with the exposure of individual ON pixels during the recording of the image. The ON pixels are then switched off and OFF pixels are switched on, and the phase of either the object beam or reference beam is changed. The process results in subtraction of residual signal from the OFF pixels.
摘要翻译： 本发明是一种增强ON和OFF像素之间的对比度的光学数据存储方法。 该方法包括在记录图像期间，将包含多个像素的二维图像写入到具有各个ON像素的曝光的记录介质中。 然后关闭ON像素，并关闭像素，并改变对象光束或参考光束的相位。 该过程导致从OFF像素中减去残留信号。
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公开(公告)号：US6005693A
公开(公告)日：1999-12-21
申请号：US857740
申请日：1997-05-16
IPC分类号： G11B7/0065 , G11C13/04 , G02B5/32 , G03H1/02 , G11C11/46
CPC分类号： G11B7/0065 , G11C13/042
摘要： The present invention is a method for optical data storage which compensates for deterministic variations. The method comprises writing a two-dimensional image comprising a plurality of pixels into a recording medium while varying the exposure of individual ON pixels during the recording of the image to expose the weaker pixels more than brighter pixels.
摘要翻译： 本发明是补偿确定性变化的光数据存储方法。 该方法包括将包含多个像素的二维图像写入到记录介质中，同时在记录图像期间改变各个ON像素的曝光，以将更弱的像素暴露于更亮的像素。
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3.发明授权Method for manufacturing a phase change memory device with pillar bottom electrode 有权具有柱底电极的相变存储器件的制造方法公开(公告)号：US08138028B2
公开(公告)日：2012-03-20
申请号：US11764678
申请日：2007-06-18
申请人： Hsiang Lan Lung , Chieh Fang Chen , Yi Chou Chen , Shih Hung Chen , Chung Hon Lam , Eric Andrew Joseph , Alejandro Gabriel Schrott , Matthew J. Breitwisch , Geoffrey William Burr , Thomas D. Happ , Jan Boris Philipp
发明人： Hsiang Lan Lung , Chieh Fang Chen , Yi Chou Chen , Shih Hung Chen , Chung Hon Lam , Eric Andrew Joseph , Alejandro Gabriel Schrott , Matthew J. Breitwisch , Geoffrey William Burr , Thomas D. Happ , Jan Boris Philipp
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , G11C13/0004 , H01L27/2436 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including an array of conductive contacts in electrical communication with access circuitry. A layer of electrode material is deposited making reliable electrical contact with the array of conductive contacts. Electrode material is etched to form a pattern of electrode pillars on corresponding conductive contacts. Next, a dielectric material is deposited over the pattern and planarized to provide an electrode surface exposing top surfaces of the electrode pillars. Next, a layer of programmable resistive material, such as a chalcogenide or other phase change material, is deposited, followed by deposition of a layer of a top electrode material. A device including bottom electrode pillars with larger bottom surfaces than top surfaces is described.
摘要翻译： 用于制造蘑菇细胞型相变存储器的方法是基于在包括与接入电路电连通的导电触点阵列的基板上制造底部电极材料的柱。 沉积一层电极材料，使其与导电触点阵列可靠地电接触。 蚀刻电极材料以在对应的导电触点上形成电极柱的图案。 接下来，将介电材料沉积在图案上并且被平坦化以提供暴露电极柱顶表面的电极表面。 接下来，沉积诸如硫族化物或其它相变材料的可编程电阻材料层，随后沉积顶层电极材料层。 描述了包括具有比顶表面更大的底表面的底部电极柱的装置。
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4.发明申请METHOD FOR MANUFACTURING A PHASE CHANGE MEMORY DEVICE WITH PILLAR BOTTOM ELECTRODE 有权用于制造具有底部电极的相变存储器件的方法公开(公告)号：US20080191187A1
公开(公告)日：2008-08-14
申请号：US11764678
申请日：2007-06-18
申请人： HSIANG LAN LUNG , CHIEH-FANG CHEN , YI-CHOU CHEN , SHIH HUNG CHEN , CHUNG HON LAM , ERIC ANDREW JOSEPH , ALEJANDRO GABRIEL SCHROTT , MATTHEW J. BREITWISCH , GEOFFREY WILLIAM BURR , THOMAS D. HAPP , JAN BORIS PHILIPP
发明人： HSIANG LAN LUNG , CHIEH-FANG CHEN , YI-CHOU CHEN , SHIH HUNG CHEN , CHUNG HON LAM , ERIC ANDREW JOSEPH , ALEJANDRO GABRIEL SCHROTT , MATTHEW J. BREITWISCH , GEOFFREY WILLIAM BURR , THOMAS D. HAPP , JAN BORIS PHILIPP
IPC分类号： H01L45/00
CPC分类号： H01L45/144 , G11C13/0004 , H01L27/2436 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1625 , H01L45/1641 , H01L45/1675
摘要： A method for manufacturing a mushroom-cell type phase change memory is based upon manufacturing a pillar of bottom electrode material upon a substrate including an array of conductive contacts in electrical communication with access circuitry. A layer of electrode material is deposited making reliable electrical contact with the array of conductive contacts. Electrode material is etched to form a pattern of electrode pillars on corresponding conductive contacts. Next, a dielectric material is deposited over the pattern and planarized to provide an electrode surface exposing top surfaces of the electrode pillars. Next, a layer of programmable resistive material, such as a chalcogenide or other phase change material, is deposited, followed by deposition of a layer of a top electrode material. A device including bottom electrode pillars with larger bottom surfaces than top surfaces is described.
摘要翻译： 用于制造蘑菇细胞型相变存储器的方法是基于在包括与接入电路电连通的导电触点阵列的基板上制造底部电极材料的柱。 沉积一层电极材料，使其与导电触点阵列可靠地电接触。 蚀刻电极材料以在对应的导电触点上形成电极柱的图案。 接下来，将介电材料沉积在图案上并且被平坦化以提供暴露电极柱顶表面的电极表面。 接下来，沉积诸如硫族化物或其它相变材料的可编程电阻材料层，随后沉积顶层电极材料层。 描述了包括具有比顶表面更大的底表面的底部电极柱的装置。
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公开(公告)号：US20080089642A1
公开(公告)日：2008-04-17
申请号：US11546626
申请日：2006-10-12
CPC分类号： G02B6/1225 , B82Y20/00 , G01N21/45
摘要： Photonic crystal apparatus and a method for fabricating a photonic crystal apparatus. The photonic crystal apparatus includes a photonic crystal having a dielectric body formed of a first dielectric material having relatively high index of refraction, and a periodic lattice in the dielectric body formed of a second dielectric material having a relatively low index of refraction. The second dielectric material comprises a solid-state dielectric material having a dielectric coefficient of about 2.7 or lower for providing a relatively large contrast between the index of refraction of the dielectric body and the index of refraction of the periodic lattice.
摘要翻译： 光子晶体装置及其制造方法。 光子晶体装置包括具有由具有相对较高折射率的第一介电材料形成的电介质体的光子晶体，以及由具有相对较低折射率的第二介电材料形成的电介质体中的周期晶格。 第二电介质材料包括具有约2.7或更低的介电系数的固态电介质材料，用于在介电体的折射率与周期性晶格的折射率之间提供较大的对比度。
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