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公开(公告)号：US20080089642A1
公开(公告)日：2008-04-17
申请号：US11546626
申请日：2006-10-12
CPC分类号： G02B6/1225 , B82Y20/00 , G01N21/45
摘要： Photonic crystal apparatus and a method for fabricating a photonic crystal apparatus. The photonic crystal apparatus includes a photonic crystal having a dielectric body formed of a first dielectric material having relatively high index of refraction, and a periodic lattice in the dielectric body formed of a second dielectric material having a relatively low index of refraction. The second dielectric material comprises a solid-state dielectric material having a dielectric coefficient of about 2.7 or lower for providing a relatively large contrast between the index of refraction of the dielectric body and the index of refraction of the periodic lattice.
摘要翻译： 光子晶体装置及其制造方法。 光子晶体装置包括具有由具有相对较高折射率的第一介电材料形成的电介质体的光子晶体，以及由具有相对较低折射率的第二介电材料形成的电介质体中的周期晶格。 第二电介质材料包括具有约2.7或更低的介电系数的固态电介质材料，用于在介电体的折射率与周期性晶格的折射率之间提供较大的对比度。
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2.发明授权公开(公告)号：US08821978B2
公开(公告)日：2014-09-02
申请号：US12641959
申请日：2009-12-18
申请人： Joy Cheng , William D. Hinsberg , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff , Atsuko Ito
发明人： Joy Cheng , William D. Hinsberg , Hiroshi Ito , Ho-Cheol Kim , Young-Hye Na , Daniel Paul Sanders , Linda Karin Sundberg , Hoa D. Truong , Gregory Michael Wallraff
CPC分类号： B82Y40/00 , B81C1/00031 , B81C2201/0149 , G03F7/0392 , G03F7/09 , G03F7/091 , G03F7/165 , G03F7/325 , G03F7/327 , G03F7/40
摘要： A method of forming a layered structure comprising a domain pattern of a self-assembled material utilizes a negative-tone patterned photoresist layer comprising non-crosslinked developed photoresist. The developed photoresist is not soluble in an organic casting solvent for a material capable of self-assembly. The developed photoresist is soluble in an aqueous alkaline developer and/or a second organic solvent. A solution comprising the material capable of self-assembly and the organic casting solvent is casted on the patterned photoresist layer. Upon removal of the organic casting solvent, the material self-assembles, thereby forming the layered structure.
摘要翻译： 形成包括自组装材料的畴图案的分层结构的方法利用包含非交联显影光致抗蚀剂的负色调图案化光致抗蚀剂层。 显影的光致抗蚀剂不溶于用于能够自组装的材料的有机浇铸溶剂中。 显影的光致抗蚀剂可溶于含水碱性显影剂和/或第二有机溶剂。 将包含能够自组装的材料和有机浇铸溶剂的溶液浇铸在图案化的光致抗蚀剂层上。 在去除有机浇注溶剂时，材料自组装，从而形成层状结构。
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公开(公告)号：US08784966B2
公开(公告)日：2014-07-22
申请号：US11950453
申请日：2007-12-05
CPC分类号： C08L101/12 , C08L53/00 , G03F7/0002 , Y10T428/24 , Y10T428/2495 , Y10T428/24975 , Y10T428/249921 , Y10T428/249953 , Y10T428/249958 , Y10T428/249975 , Y10T428/249978 , Y10T428/249979 , Y10T428/24998 , Y10T428/25 , Y10T428/26 , Y10T428/31504 , Y10T428/31511 , Y10T428/31612 , Y10T428/31663 , Y10T428/31931 , Y10T428/31935 , Y10T428/31938
摘要： A method of forming a material. A self-assembling block copolymer that includes a first block species and a second block species respectively characterized by a volume fraction of F1 and F2 with respect to the self-assembling block copolymer is provided. At least one crosslinkable polymer that is miscible with the second block species is provided. The self-assembling block copolymer and the at least one crosslinkable polymer are combined to form a mixture. The mixture having a volume fraction, F3, of the crosslinkable polymer, a volume fraction, F1A, of the first block species, and a volume fraction, F2A, of the second block species is formed. A material having a predefined morphology where the sum of F2A and F3 were preselected is formed.
摘要翻译： 一种形成材料的方法。 提供了一种自组装嵌段共聚物，其包括分别以相对于自组装嵌段共聚物的F1和F2的体积分数表征的第一嵌段和第二嵌段。 提供了与第二嵌段物质混溶的至少一种可交联聚合物。 自组装嵌段共聚物和至少一种可交联聚合物组合形成混合物。 形成具有可交联聚合物的体积分数F3，第一嵌段物质的体积分数F1A和第二嵌段物质的体积分数F2A的混合物。 形成具有预定形态的材料，其中预先选择F2A和F3的总和。
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公开(公告)号：US08754400B2
公开(公告)日：2014-06-17
申请号：US13432036
申请日：2012-03-28
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y30/00 , H01L21/0338 , Y10T428/24612
摘要： A first nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running along a first direction is formed from first self-assembling block copolymers within a first layer. The first layer is filled with a filler material and a second layer is deposited above the first layer containing the first nanoscale nested line structure. A second nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running in a second direction is formed from second self-assembling block copolymers within the second layer. The composite pattern of the first nanoscale nested line structure and the second nanoscale nested line structure is transferred into an underlayer beneath the first layer to form an array of structures containing periodicity in two directions.
摘要翻译： 具有亚光刻宽度和亚光刻距离并沿着第一方向延伸的第一纳米级自对准自组装嵌套线结构由第一层内的第一自组装嵌段共聚物形成。 第一层填充有填充材料，并且第二层沉积在包含第一纳米级嵌套线结构的第一层之上。 具有亚光刻宽度和亚光刻距离并沿第二方向运行的第二纳米级自对准自组装嵌套线结构由第二层内的第二自组装嵌段共聚物形成。 第一纳米级嵌套线结构和第二纳米级嵌套线结构的复合图案被转移到第一层下面的底层中以形成在两个方向上包含周期性的结构阵列。
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5.发明授权Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications 有权金属过氧化合物与电子束，深UV和极紫外光致抗蚀剂应用的有机共配体公开(公告)号：US08703386B2
公开(公告)日：2014-04-22
申请号：US13405587
申请日：2012-02-27
申请人： John David Bass , Ho-Cheol Kim , Robert Dennis Miller , Qing Song , Linda Karin Sundberg , Gregory Michael Wallraff
发明人： John David Bass , Ho-Cheol Kim , Robert Dennis Miller , Qing Song , Linda Karin Sundberg , Gregory Michael Wallraff
CPC分类号： G03F7/0042
摘要： Compositions are disclosed having the formula (3): [C′]k[Ta(O2)x(L′)y] (3), wherein x is an integer of 1 to 4, y is an integer of 1 to 4, Ta(O2)x(L′)y has a charge of 0 to −3, C′ is a counterion having a charge of +1 to +3, k is an integer of 0 to 3, L′ is an oxidatively stable organic ligand having a charge of 0 to −4, and L′ comprises an electron donating functional group selected from the group consisting of carboxylates, alkoxides, amines, amine oxides, phosphines, phosphine oxides, arsine oxides, and combinations thereof. The compositions have utility as high resolution photoresists.
摘要翻译： 公开了具有式（3）的组合物：[C'] k [Ta（O 2）x（L'）y]（3）其中x是1至4的整数，y是1至4的整数， Ta（O 2）x（L'）y具有0至-3的电荷，C'是具有+1至+3的电荷的抗衡离子，k是0至3的整数，L'是氧化稳定的有机物 配体的电荷为0至-4，L'包括选自羧酸盐，醇盐，胺，氧化胺，膦，氧化膦，胂氧化物及其组合的给电子官能团。 该组合物具有作为高分辨率光致抗蚀剂的作用。
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6.发明授权公开(公告)号：US08623458B2
公开(公告)日：2014-01-07
申请号：US12642018
申请日：2009-12-18
申请人： Joy Cheng , Matthew E. Colburn , Stefan Harrer , William D. Hinsberg , Steven J. Holmes , Ho-Cheol Kim , Daniel Paul Sanders
发明人： Joy Cheng , Matthew E. Colburn , Stefan Harrer , William D. Hinsberg , Steven J. Holmes , Ho-Cheol Kim , Daniel Paul Sanders
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A layered structure comprising a self-assembled material is formed by a method that includes forming a photochemically, thermally and/or chemically treated patterned photoresist layer disposed on a first surface of a substrate. The treated patterned photoresist layer comprises a non-crosslinked treated photoresist. An orientation control material is cast on the treated patterned photoresist layer, forming a layer containing orientation control material bound to a second surface of the substrate. The treated photoresist and, optionally, any non-bound orientation control material are removed by a development process, resulting in a pre-pattern for self-assembly. A material capable of self-assembly is cast on the pre-pattern. The casted material is allowed to self-assemble with optional heating and/or annealing to produce the layered structure.
摘要翻译： 包括自组装材料的层状结构通过包括形成设置在衬底的第一表面上的光化学，热和/或化学处理的图案化光致抗蚀剂层的方法形成。 经处理的图案化光刻胶层包括非交联处理的光致抗蚀剂。 将取向控制材料浇铸在经处理的图案化的光致抗蚀剂层上，形成包含与基材的第二表面结合的取向控制材料的层。 经处理的光致抗蚀剂和任选的任何未结合的取向控制材料通过显影过程被去除，从而形成用于自组装的预图案。 能够自组装的材料在预制图案上铸造。 允许铸造材料通过任选的加热和/或退火自组装以产生分层结构。
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公开(公告)号：US08529779B2
公开(公告)日：2013-09-10
申请号：US12057565
申请日：2008-03-28
申请人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
发明人： Joy Cheng , Mark W. Hart , Hiroshi Ito , Ho-Cheol Kim , Robert Miller
IPC分类号： B31D3/00 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , B81C2201/0198 , H01L21/0271 , H01L21/0332
摘要： A method for producing surface features and an etch masking method. A combination is provided of a block copolymer and additional material. The block copolymer includes a first block of a first polymer covalently bonded to a second block of a second polymer. The additional material is miscible with the first polymer. A film is formed of the combination directly onto a surface of a first layer. Nanostructures of the additional material self-assemble within the first polymer block. The film of the combination and the first layer are etched. The nanostructures have an etch rate lower than an etch rate of the block copolymer and lower than an etch rate of the first layer. The film is removed and features remain on the surface of the first layer. Also included is an etch masking method where the nanostructures mask portions of the first layer from said etchant.
摘要翻译： 一种用于产生表面特征的方法和蚀刻掩模方法。 提供了一种嵌段共聚物和另外的材料的组合。 嵌段共聚物包括共价键合到第二聚合物的第二嵌段的第一聚合物的第一嵌段。 附加材料与第一聚合物混溶。 膜由直接形成在第一层的表面上。 附加材料的纳米结构在第一聚合物嵌段内自组装。 蚀刻组合和第一层的膜。 纳米结构的蚀刻速率低于嵌段共聚物的蚀刻速率，并且低于第一层的蚀刻速率。 去除膜并且特征保留在第一层的表面上。 还包括蚀刻掩模法，其中纳米结构掩盖了来自所述蚀刻剂的第一层的部分。
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公开(公告)号：US08389589B2
公开(公告)日：2013-03-05
申请号：US12338692
申请日：2008-12-18
申请人： Jennifer Nam Cha , Geraud Jean-Michel Dubois , James Lupton Hedrick , Ho-Cheol Kim , Victor Yee-Way Lee , Teddie Peregrino Magbitang , Robert Dennis Miller , Willi Volksen
发明人： Jennifer Nam Cha , Geraud Jean-Michel Dubois , James Lupton Hedrick , Ho-Cheol Kim , Victor Yee-Way Lee , Teddie Peregrino Magbitang , Robert Dennis Miller , Willi Volksen
CPC分类号： H01L21/3121 , G03F7/0002 , H01L21/02118 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/312 , H01L21/31695 , Y10T428/249953 , Y10T428/31663
摘要： A nanoporous material exhibiting a lamellar structure is disclosed. The material comprises three or more substantially parallel sheets of an organosilicate material, separated by highly porous spacer regions. The distance between the centers of the sheets lies between 1 nm and 50 nm. The highly porous spacer regions may be substantially free of condensed material. For the manufacture of such materials, a process is disclosed in which matrix non-amphiphilic polymeric material and templating polymeric material are dispersed in a solvent, where the templating polymeric material includes a polymeric amphiphilic material. The solvent with the polymeric materials is distributed onto a substrate. Organization is induced in the templating polymeric material. The solvent is removed, leaving the polymeric materials in place. The matrix polymeric material is cured, forming a lamellar structure.
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9.发明授权Method of forming polymer features by directed self-assembly of block copolymers 有权通过嵌段共聚物的定向自组装形成聚合物特征的方法公开(公告)号：US08226838B2
公开(公告)日：2012-07-24
申请号：US12061693
申请日：2008-04-03
IPC分类号： C03C15/00
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： Disclosed are methods of forming polymer structures comprising: applying a solution of a block copolymer assembly comprising at least one block copolymer to a neutral substrate having a chemical pattern thereon, the chemical pattern comprising alternating pinning and neutral regions that are chemically distinct and have a first spatial frequency given by the number of paired sets of pinning and neutral regions along a given direction on the substrate; and forming domains of the block copolymer that form by lateral segregation of the blocks in accordance with the underlying chemical pattern, wherein at least one domain of the block copolymer assembly has an affinity for the pinning regions, wherein a structure extending across the chemical pattern is produced, the structure having a uniform second spatial frequency given by the number of repeating sets of domains along the given direction that is at least twice that of the first spatial frequency.
摘要翻译： 公开了形成聚合物结构的方法，包括：将包含至少一种嵌段共聚物的嵌段共聚物组合物溶液施加到其上具有化学图案的中性衬底上，所述化学图案包括化学上不同的交替的钉扎和中性区域，并且具有第一 空间频率由衬底上沿着给定方向的成套组钉扎和中性区域的数量给出; 以及通过根据下面的化学图案横向分离块而形成嵌段共聚物的结构域，其中嵌段共聚物组合物的至少一个结构域对于钉扎区域具有亲和力，其中横跨化学图案延伸的结构是 所述结构具有由给定方向上的至少是第一空间频率的两倍的畴的重复集合的数量给出的统一的第二空间频率。
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公开(公告)号：US20110227059A1
公开(公告)日：2011-09-22
申请号：US12727710
申请日：2010-03-19
申请人： Ho-Cheol Kim , Sang-Min Park
发明人： Ho-Cheol Kim , Sang-Min Park
CPC分类号： B82Y40/00 , B82Y30/00 , H01G11/26 , H01G11/36 , H01G11/46 , H01M4/625 , H01M10/0525 , Y02E60/13
摘要： Glassy carbon nanostructures are disclosed that can be used as electrode materials in batteries and electrochemical capacitors, or as photoelectrodes in photocatalysis and photoelectrochemistry devices. In some embodiments channels (e.g., substantially cylindrically-shaped pores) are formed in a glassy carbon substrate, whereas in other embodiments, ridges are formed that extend along and over a glassy carbon substrate. In either case, a semiconductor and/or metal oxide may be deposited over the glassy carbon to form a composite material.
摘要翻译： 公开了可用作电池和电化学电容器中的电极材料的玻璃碳纳米结构，或用作光催化和光电化学装置中的光电极。 在一些实施例中，在玻璃碳基板中形成通道（例如，基本上为圆柱形的孔），而在其它实施例中，形成沿着玻璃碳基板延伸的脊。 在任一情况下，半导体和/或金属氧化物可以沉积在玻璃碳上以形成复合材料。
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