利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

19 条记录 (耗时 0.016 秒)

    Methods for enhancing photolithography patterning
    1.
    发明授权
    Methods for enhancing photolithography patterning 有权
    增强光刻图案的方法

    公开(公告)号：US08450046B2

    公开(公告)日：2013-05-28

    申请号：US12392093

    申请日：2009-02-24

    申请人： Moh Lung Ling ,  Gek Soon Chua ,  Qunying Lin ,  Cho Jui Tay ,  Chenggen Quan

    发明人： Moh Lung Ling ,  Gek Soon Chua ,  Qunying Lin ,  Cho Jui Tay ,  Chenggen Quan

    IPC分类号： G03F7/30 ,  G03B27/72

    CPC分类号： G03F7/30 ,  G03B27/72 ,  G03F7/70125 ,  G03F7/70425

    摘要： A method for fabricating a semiconductor device that includes: providing a substrate prepared with a photoresist layer; providing a photomask comprising a first and a second pattern having a respective first and second pitch range; providing a composite aperture comprising a first and a second off-axis illumination aperture pattern, the first off-axis aperture pattern having a configuration that improves the process window of the first pitch range and the second off-axis aperture pattern having a configuration that improves the process window for a second pitch range; exposing the photoresist layer on the substrate with radiation from an exposure source through the composite aperture and the photomask; and developing the photoresist layer to pattern the photoresist layer.

    摘要翻译： 一种制造半导体器件的方法，包括：提供用光致抗蚀剂层制备的衬底; 提供包括具有相应的第一和第二间距范围的第一和第二图案的光掩模; 提供包括第一和第二离轴照明孔径图案的复合孔径，第一离轴孔径图案具有改善第一间距范围的处理窗口并且具有改善的构造的第二离轴孔径图案的构造 用于第二间距范围的过程窗口; 通过复合孔径和光掩模将来自曝光源的辐射曝光在基板上; 并且使光致抗蚀剂层显影以对光致抗蚀剂层进行图案化。

    Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask
    3.
    发明授权
    Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask 有权
    角度楔形铬面墙用于交变相移掩模的强度平衡

    公开(公告)号：US07674562B2

    公开(公告)日：2010-03-09

    申请号：US11297532

    申请日：2005-12-07

    申请人： Gek Soon Chua ,  Sia Kim Tan ,  Qunying Lin ,  Cho Jui Tay ,  Chenggen Quan

    发明人： Gek Soon Chua ,  Sia Kim Tan ,  Qunying Lin ,  Cho Jui Tay ,  Chenggen Quan

    IPC分类号： G03F1/08 ,  G03F1/14

    CPC分类号： G03F1/30

    摘要： A method for forming a phase shift mask is presented. The method includes providing a substrate including a transparent material having first, second and third regions, the third region being disposed between the first and second regions. The method also includes forming a light reducing layer on a first major surface of the substrate. The light reducing layer is patterned to form a patterned light reducing layer having sidewalls defining openings to expose the first and second regions. The patterned light reducing layer is processed to transform the sidewalls of the patterned light reducing layer to angled sidewalls having an angle of less than 90° from a plane of the first major surface of the substrate. The angled sidewalls improve intensity balance of an image-formed by light-transmitted through the mask.

    摘要翻译： 提出了一种形成相移掩模的方法。 该方法包括提供包括具有第一，第二和第三区域的透明材料的基板，该第三区域设置在第一和第二区域之间。 该方法还包括在基板的第一主表面上形成减光层。 图案化减光层以形成具有限定开口以暴露第一和第二区域的侧壁的图案化减光层。 处理图案化的光降低层以将图案化的减光层的侧壁转变成与基板的第一主表面的平面成小于90°的角度的成角度的侧壁。 成角度的侧壁提高了透过掩模的光图像形成的强度平衡。

    ETCH FAILURE PREDICTION BASED ON WAFER RESIST TOP LOSS
    6.
    发明申请
    ETCH FAILURE PREDICTION BASED ON WAFER RESIST TOP LOSS 有权
    基于波浪失效的失效预测失败

    公开(公告)号：US20140282286A1

    公开(公告)日：2014-09-18

    申请号：US13835339

    申请日：2013-03-15

    申请人： Qing YANG ,  Shyue Fong Quek ,  Gek Soon Chua ,  Yee Mei Foong ,  Dong Qing Zhang ,  Yun Tang

    发明人： Qing YANG ,  Shyue Fong Quek ,  Gek Soon Chua ,  Yee Mei Foong ,  Dong Qing Zhang ,  Yun Tang

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036 ,  G03F1/70 ,  G03F7/70433 ,  G03F7/705

    摘要： An approach for methodology, and an associated apparatus, enabling a simulation process to check integrity of the design and predict a manufacturability of a resulting circuit that accounts for process latitude without a long turnaround time and/or a highly skilled engineer is disclosed. Embodiments include: determining first and second features of an IC design; determining a thickness of a resist layer of the IC design based on an aerial image of the IC design; determining a threshold value according to the thickness; and comparing the threshold value to a separation distance between the first and second features.

    摘要翻译： 公开了一种用于方法学和相关设备的方法，其使模拟过程能够检查设计的完整性并且预测所产生的电路的可制造性，其考虑到处理纬度而没有长的周转时间和/或高技能的工程师。 实施例包括：确定IC设计的第一和第二特征; 基于IC设计的空中图像确定IC设计的抗蚀剂层的厚度; 根据厚度确定阈值; 以及将阈值与第一和第二特征之间的间隔距离进行比较。

    ANGLED-WEDGE CHROME-FACE WALL FOR INTENSITY BALANCE OF ALTERNATING PHASE SHIFT MASK
    7.
    发明申请
    ANGLED-WEDGE CHROME-FACE WALL FOR INTENSITY BALANCE OF ALTERNATING PHASE SHIFT MASK 有权
    ANGED-WEDGE CHROME-FACE WALL FOR INTENSITY BALANCE OF ALTERATE PHASE SHIFT MASK

    公开(公告)号：US20100197140A1

    公开(公告)日：2010-08-05

    申请号：US12696067

    申请日：2010-01-29

    申请人： Gek Soon CHUA ,  Sia Kim TAN ,  Qunying LIN ,  Cho Jui TAY ,  Chenggen QUAN

    发明人： Gek Soon CHUA ,  Sia Kim TAN ,  Qunying LIN ,  Cho Jui TAY ,  Chenggen QUAN

    IPC分类号： H01L21/027 ,  G03F7/20

    CPC分类号： G03F1/30

    摘要： A method for forming a semiconductor device is presented. The method includes providing a substrate having a photoresist thereon and transmitting a light source through a mask having a pattern onto the photoresist. The mask comprises a mask substrate having first, second and third regions, the third region is disposed between the first and second regions. The mask also includes a light reducing layer over the mask substrate having a first opening over the first region and a second opening over the second region. The first and second openings have layer sidewalls. The sidewalls of the light reducing layer are slanted at an angle less than 90 degrees with the plane of a top surface of the mask substrate. The method also includes developing the photoresist to transfer the pattern of the mask to the photoresist.

    摘要翻译： 提出了一种形成半导体器件的方法。 该方法包括提供其上具有光致抗蚀剂的基底，并通过具有图案的掩模将光源透射到光致抗蚀剂上。 掩模包括具有第一，第二和第三区域的掩模基板，第三区域设置在第一和第二区域之间。 掩模还包括在掩模基板上方的减光层，在第一区域上具有第一开口，在第二区域上具有第二开口。 第一和第二开口具有层侧壁。 减光层的侧壁与掩模基板的顶表面的平面以小于90度的角度倾斜。 该方法还包括显影光致抗蚀剂以将掩模的图案转移到光致抗蚀剂。

    Method and apparatus for performing optical proximity and photomask correction
    9.
    发明授权
    Method and apparatus for performing optical proximity and photomask correction 有权
    用于执行光学接近和光掩模校正的方法和装置

    公开(公告)号：US09122160B2

    公开(公告)日：2015-09-01

    申请号：US13832557

    申请日：2013-03-15

    申请人： Gek Soon Chua ,  Yi Zou ,  Wei-Long Wang ,  Byoung Il Choi

    发明人： Gek Soon Chua ,  Yi Zou ,  Wei-Long Wang ,  Byoung Il Choi

    IPC分类号： G06F17/50 ,  G03F1/00

    CPC分类号： G03F1/144 ,  G03F1/36 ,  G06F17/5081 ,  G06F2217/12 ,  Y02P90/265 ,  Y02T10/82

    摘要： An approach is provided for enabling simulation of photomask contour shapes, performing verification on the simulated photomask shapes, and correcting errors in OPC correction or bad fracturing methods to perform photomask proximity correction in real time before physically writing of the photomask. Embodiments include performing optical proximity correction of a photomask of a semiconductor layout to generate a corrected photomask, simulating the corrected photomask to generate one or more simulated contour shapes within a simulated photomask, verifying the simulated contour shapes to determine errors associated with the simulated photomask, and correcting the errors in the simulated contour shapes of the simulated photomask to generate a final photomask.

    摘要翻译： 提供了一种方法，用于实现光掩模轮廓形状的模拟，对模拟的光掩模形状进行验证，以及校正OPC校正中的错误或不良压裂方法，以在物理写入光掩模之前实时执行光掩模接近校正。 实施例包括执行半导体布局的光掩模的光学邻近校正以产生校正的光掩模，模拟校正的光掩模以在模拟光掩模内生成一个或多个模拟轮廓形状，验证模拟轮廓形状以确定与模拟光掩模相关联的误差， 并且校正模拟光掩模的模拟轮廓形状中的误差以产生最终的光掩模。

    Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask
    10.
    发明授权
    Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask 有权
    角度楔形铬面墙用于交变相移掩模的强度平衡

    公开(公告)号：US08034543B2

    公开(公告)日：2011-10-11

    申请号：US12696067

    申请日：2010-01-29

    申请人： Gek Soon Chua ,  Sia Kim Tan ,  Qunying Lin ,  Cho Jui Tay ,  Chenggen Quan

    发明人： Gek Soon Chua ,  Sia Kim Tan ,  Qunying Lin ,  Cho Jui Tay ,  Chenggen Quan

    IPC分类号： G03F7/20 ,  G03F7/26

    CPC分类号： G03F1/30

    摘要： A method for forming a semiconductor device is presented. The method includes providing a substrate having a photoresist thereon and transmitting a light source through a mask having a pattern onto the photoresist. The mask comprises a mask substrate having first, second and third regions, the third region is disposed between the first and second regions. The mask also includes a light reducing layer over the mask substrate having a first opening over the first region and a second opening over the second region. The first and second openings have layer sidewalls. The sidewalls of the light reducing layer are slanted at an angle less than 90 degrees from the plane of a top surface of the mask substrate. The method also includes developing the photoresist to transfer the pattern of the mask to the photoresist.

    摘要翻译： 提出了一种形成半导体器件的方法。 该方法包括提供其上具有光致抗蚀剂的基底，并通过具有图案的掩模将光源透射到光致抗蚀剂上。 掩模包括具有第一，第二和第三区域的掩模基板，第三区域设置在第一和第二区域之间。 掩模还包括在掩模基板上方的减光层，在第一区域上具有第一开口，在第二区域上具有第二开口。 第一和第二开口具有层侧壁。 减光层的侧壁以与掩模基板的顶面的平面成90度以下的角度倾斜。 该方法还包括显影光致抗蚀剂以将掩模的图案转移到光致抗蚀剂。