公开(公告)号：US07314834B2

公开(公告)日：2008-01-01

申请号：US11153898

申请日：2005-06-16

申请人： Genta Koizumi

发明人： Genta Koizumi

IPC分类号： H01L21/302

CPC分类号： G03F7/095 ,  C23F1/02 ,  G03F1/36 ,  G03F7/2022 ,  G03F7/70433 ,  H01L21/28506 ,  H01L21/32051

摘要： A semiconductor device fabrication method applies a diazo novolac photoresist to a semiconductor wafer, followed by light exposure of its entire surface to form an underlying resist layer; forms a surface resist layer thereover; performs patterned-light exposure and heat treatment to the photoresist film consisting of the two resist layers formed; and exposes its entire surface to light, followed by development to process the photoresist film into a resist pattern, where the surface resist layer is in an inverse tapered shape, while the underlying resist layer is in an undercut shape relative to the surface resist layer.

摘要翻译： 半导体器件制造方法将重氮酚醛清漆光致抗蚀剂应用于半导体晶片，然后对其整个表面进行曝光以形成下面的抗蚀剂层; 在其上形成表面抗蚀剂层; 对由形成的两个抗蚀剂层构成的光致抗蚀剂膜进行图案曝光和热处理; 并将其整个表面曝光，然后显影以将光致抗蚀剂膜处理成抗蚀剂图案，其中表面抗蚀剂层呈倒锥形，而下面的抗蚀剂层相对于表面抗蚀剂层处于底切形状。

公开(公告)号：US20060138078A1

公开(公告)日：2006-06-29

申请号：US11153898

申请日：2005-06-16

申请人： Genta Koizumi

发明人： Genta Koizumi

IPC分类号： H01B13/00 ,  C23F1/00 ,  G03F1/00 ,  C03C25/68

CPC分类号： G03F7/095 ,  C23F1/02 ,  G03F1/36 ,  G03F7/2022 ,  G03F7/70433 ,  H01L21/28506 ,  H01L21/32051

摘要： A semiconductor device fabrication method applies a diazo novolac photoresist to a semiconductor wafer, followed by light exposure of its entire surface to form an underlying resist layer; forms a surface resist layer thereover; performs patterned-light exposure and heat treatment to the photoresist film consisting of the two resist layers formed; and exposes its entire surface to light, followed by development to process the photoresist film into a resist pattern, where the surface resist layer is in an inverse tapered shape, while the underlying resist layer is in an undercut shape relative to the surface resist layer.

摘要翻译： 半导体器件制造方法将重氮酚醛清漆光致抗蚀剂应用于半导体晶片，然后对其整个表面进行曝光以形成下面的抗蚀剂层; 在其上形成表面抗蚀剂层; 对由形成的两个抗蚀剂层构成的光致抗蚀剂膜进行图案曝光和热处理; 并将其整个表面曝光，然后显影以将光致抗蚀剂膜处理成抗蚀剂图案，其中表面抗蚀剂层呈倒锥形，而下面的抗蚀剂层相对于表面抗蚀剂层处于底切形状。

公开(公告)号：US06781157B2

公开(公告)日：2004-08-24

申请号：US10231294

申请日：2002-08-29

申请人： Masahiro Noguchi ,  Eiichi Kunitake ,  Genta Koizumi

发明人： Masahiro Noguchi ,  Eiichi Kunitake ,  Genta Koizumi

IPC分类号： H01L2715

CPC分类号： B41J2/45

摘要： A LED monolithic array type like emitting device which has a plurality of light emitting parts. The device is particularly suitable as a light source for printers. Each light emitting part has a light emitting diode having a laminate structure. The laminate structure has an end-type GaAs substrate and, epitaxially grown on the n-type substrate in the following order: 1) an n-type GaSa buffer layer, an n-type laminated reflection film formed of layer pairs, each having AlGaAs layers different from each other in aluminum composition ratio, an n-type AlGaAs lower cladding layer, a p-type or undoped AlGaAs active layer, a p-type AlGaAs upper cladding layer and a p-type AlGaAs contact layer. Each layer pair making up the laminated reflection film has an AlX1GA1−X1As layer and an AlX2GA1−X2As layer where X1 and X2 represent the Al composition ratio.

摘要翻译： 一种具有多个发光部件的LED单片阵列型发光装置。 该设备特别适合作为打印机的光源。 每个发光部分具有层叠结构的发光二极管。 该叠层结构具有端部型GaAs衬底，并且以下列顺序在n型衬底上外延生长：1）n型GaSa缓冲层，由层对形成的n型叠层反射膜，每层具有AlGaAs 铝组成比彼此不同的层，n型AlGaAs下包层，p型或未掺杂的AlGaAs有源层，p型AlGaAs上覆层和p型AlGaAs接触层。 构成层叠反射膜的每层对具有AlX1GA1-X1As层和AlX2GA1-X2As层，其中X1和X2表示Al组成比。

公开(公告)号：US06252351B1

公开(公告)日：2001-06-26

申请号：US09219303

申请日：1998-12-23

申请人： Genta Koizumi ,  Katsuhiko Sakai ,  Hiroshi Mabuchi ,  Mitsuru Yamazaki ,  Seiichi Kurihara ,  Yuji Abe

发明人： Genta Koizumi ,  Katsuhiko Sakai ,  Hiroshi Mabuchi ,  Mitsuru Yamazaki ,  Seiichi Kurihara ,  Yuji Abe

IPC分类号： H01J162

CPC分类号： H01L33/38 ,  B41J2/45 ,  H01L27/153 ,  H01L33/20 ,  H01L33/44

摘要： A contact layer having a low resistance in an LED is extended from an inside edge of a light take-out region in a light emitting dot to a central position thereof, whereby an input current in the light take-out region expands, while an electrode is extended from an inside edge of the light take-out region to the center of the light take-out region so as to shape like substantially a letter T with a length which is not over the center, whereby increase in an electrode covering ratio in the light take-out region can be suppressed. As a result, a uniform light output in the light take-out region can be attained, so that a light output can be remarkably improved. When electrodes in the light take-out regions in adjacent light emitting dots are staggered relative to the direction perpendicular to an aligned direction of the light take-out region (a reference straight line), the light take-out regions are arranged horizontally in substantially a straight line, so that a light emitting pattern in the aligned direction of the light take-out regions are not so staggered. Thus, an LED array having a high output and a uniform distribution of light intensity is provided.

摘要翻译： 在LED中具有低电阻的接触层从发光点的光取出区域的内边缘延伸到其中心位置，由此光取出区域中的输入电流膨胀，而电极 从光取出区域的内边缘延伸到光取出区域的中心，以便形成为长度不在中心的大致字母T，从而增加电极覆盖率 可以抑制光取出区域。 结果，可以获得在光取出区域中均匀的光输出，从而可以显着提高光输出。 当相邻发光点的光取出区域中的电极相对于与光取出区域（参考直线）的排列方向垂直的方向交错时，光取出区域基本上水平布置 直线，使得在光取出区域的排列方向上的发光图案不是错开的。 因此，提供具有高输出和均匀光强分布的LED阵列。