公开(公告)号：US07316747B2

公开(公告)日：2008-01-08

申请号：US11248579

申请日：2005-10-12

申请人： Jason Ronald Jenny ,  David Phillip Malta ,  Hudson McDonald Hobgood ,  Stephan Georg Mueller ,  Mark Brady ,  Robert Tyler Leonard ,  Adrian Powell ,  Valeri F. Tsvetkov ,  George J. Fechko, Jr. ,  Calvin H. Carter, Jr.

发明人： Jason Ronald Jenny ,  David Phillip Malta ,  Hudson McDonald Hobgood ,  Stephan Georg Mueller ,  Mark Brady ,  Robert Tyler Leonard ,  Adrian Powell ,  Valeri F. Tsvetkov ,  George J. Fechko, Jr. ,  Calvin H. Carter, Jr.

IPC分类号： C30B25/12

CPC分类号： C30B23/00 ,  C30B23/025 ,  C30B29/36 ,  C30B33/00 ,  H01L21/324

摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.

摘要翻译： 公开了一种用于在种子生长系统中生产高质量大块碳化硅单晶并且在不存在固体碳化硅源的情况下，通过减少碳化硅晶种和种子保持器之间的分离直到导电传热 晶种和种子保持器之间的种子晶种和种子保持器之间的辐射热传递在基本上与种子保持器相邻的整个晶种表面上。

公开(公告)号：US4337567A

公开(公告)日：1982-07-06

申请号：US150483

申请日：1980-05-16

申请人： Robert Lugosi ,  George J. Fechko ,  Alan T. Male ,  Henry E. Haller, III ,  Cecil J. Mole

发明人： Robert Lugosi ,  George J. Fechko ,  Alan T. Male ,  Henry E. Haller, III ,  Cecil J. Mole

IPC分类号： H02K3/04 ,  H02K3/14 ,  H02K15/04 ,  H02K55/04

CPC分类号： H02K15/0414 ,  H02K3/04 ,  H02K3/14 ,  H02K2203/15 ,  H02K55/04 ,  Y02E40/625 ,  Y10S505/928 ,  Y10T29/49009 ,  Y10T29/49071

摘要： A high efficiency conductor bar is provided for use in a high flux density environment. The bar is made up of a number of subconductors, each of which consists of strands of small size, insulated copper wire wound into twisted bundles and cables so as to be completely transposed. The subconductors and a tube for coolant fluid are then assembled into a conventionally transposed conductor bar.

摘要翻译： 提供了一种高效率导体条，用于高通量密度环境。 该棒由多个次导体组成，每个子体由小直径的线束组成，缠绕成绞合束的电缆和电缆，以便完全转置。 然后将导体和用于冷却剂流体的管组装成常规转置的导体条。

公开(公告)号：US4260924A

公开(公告)日：1981-04-07

申请号：US945985

申请日：1978-09-27

申请人： Robert Lugosi ,  George J. Fechko ,  Alan T. Male ,  Henry E. Haller, III ,  Cecil J. Mole

发明人： Robert Lugosi ,  George J. Fechko ,  Alan T. Male ,  Henry E. Haller, III ,  Cecil J. Mole

IPC分类号： H02K3/04 ,  H02K3/14 ,  H02K15/04 ,  H02K55/04

CPC分类号： H02K15/0414 ,  H02K3/04 ,  H02K3/14 ,  H02K2203/15 ,  H02K55/04 ,  Y02E40/625

摘要： A high efficiency conductor bar is provided for use in a high flux density environment. The bar is made up of a number of subconductors, each of which consists of strands of small size, insulated copper wire wound into twisted bundles and cables so as to be completely transposed. The subconductors and a tube for coolant fluid are then assembled into a conventionally transposed conductor bar.

摘要翻译： 提供了一种高效率导体条，用于高通量密度环境。 该棒由多个次导体组成，每个子体由小直径的线束组成，缠绕成绞合束的电缆和电缆，以便完全转置。 然后将导体和用于冷却剂流体的管组装成常规转置的导体条。

公开(公告)号：US07323051B2

公开(公告)日：2008-01-29

申请号：US11248458

申请日：2005-10-12

申请人： Hudson M. Hobgood ,  Jason R. Jenny ,  David Phillip Malta ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr. ,  Robert Tyler Leonard ,  George J. Fechko, Jr.

发明人： Hudson M. Hobgood ,  Jason R. Jenny ,  David Phillip Malta ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr. ,  Robert Tyler Leonard ,  George J. Fechko, Jr.

IPC分类号： C30B25/12

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  C30B33/00 ,  H01L21/324 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1016 ,  Y10T428/21 ,  Y10T428/31

摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.

摘要翻译： 公开了用于在种子生长系统中生产高质量的碳化硅块状单晶的方法。 该方法包括用低孔隙率背衬材料将晶种定位在种子保持器上，该材料提供了从种子对碳化硅升华的蒸汽屏障，并使种子和背衬材料之间的热导率差最小化以最小化或消除温差 跨越种子，并且同样使来自种子后部的蒸汽输送最小化或消除，否则将引发和传播生长晶体中的缺陷。

公开(公告)号：US07220313B2

公开(公告)日：2007-05-22

申请号：US10628188

申请日：2003-07-28

申请人： George J. Fechko, Jr. ,  Jason R. Jenny ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr.

发明人： George J. Fechko, Jr. ,  Jason R. Jenny ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr.

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： C30B23/005 ,  C30B23/002 ,  C30B29/36 ,  Y10S117/906

摘要： The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

摘要翻译： 本发明涉及控制碳化硅晶体中的氮含量，特别涉及在碳化硅升华生长期间降低氮的掺入。 本发明通过在生长室中提供氢的环境气氛来控制生长中的碳化硅晶体中的氮浓度。 实际上，氢原子阻断，降低或以其他方式妨碍氮原子在生长晶体的表面的引入。