公开(公告)号：US07323051B2

公开(公告)日：2008-01-29

申请号：US11248458

申请日：2005-10-12

申请人： Hudson M. Hobgood ,  Jason R. Jenny ,  David Phillip Malta ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr. ,  Robert Tyler Leonard ,  George J. Fechko, Jr.

发明人： Hudson M. Hobgood ,  Jason R. Jenny ,  David Phillip Malta ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr. ,  Robert Tyler Leonard ,  George J. Fechko, Jr.

IPC分类号： C30B25/12

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  C30B33/00 ,  H01L21/324 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1016 ,  Y10T428/21 ,  Y10T428/31

摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system. The method includes positioning a seed crystal on the seed holder with a low porosity backing material that provides a vapor barrier to silicon carbide sublimation from the seed and that minimizes the difference in thermal conductivity between the seed and the backing material to minimize or eliminate temperature differences across the seed and likewise minimize or eliminate vapor transport from the rear of the seed that would otherwise initiate and propagate defects in the growing crystal.

摘要翻译： 公开了用于在种子生长系统中生产高质量的碳化硅块状单晶的方法。 该方法包括用低孔隙率背衬材料将晶种定位在种子保持器上，该材料提供了从种子对碳化硅升华的蒸汽屏障，并使种子和背衬材料之间的热导率差最小化以最小化或消除温差 跨越种子，并且同样使来自种子后部的蒸汽输送最小化或消除，否则将引发和传播生长晶体中的缺陷。

公开(公告)号：US07220313B2

公开(公告)日：2007-05-22

申请号：US10628188

申请日：2003-07-28

申请人： George J. Fechko, Jr. ,  Jason R. Jenny ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr.

发明人： George J. Fechko, Jr. ,  Jason R. Jenny ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Calvin H. Carter, Jr.

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： C30B23/005 ,  C30B23/002 ,  C30B29/36 ,  Y10S117/906

摘要： The invention herein relates to controlling the nitrogen content in silicon carbide crystals and in particular relates to reducing the incorporation of nitrogen during sublimation growth of silicon carbide. The invention controls nitrogen concentration in a growing silicon carbide crystal by providing an ambient atmosphere of hydrogen in the growth chamber. The hydrogen atoms, in effect, block, reduce, or otherwise hinder the incorporation of nitrogen atoms at the surface of the growing crystal.

摘要翻译： 本发明涉及控制碳化硅晶体中的氮含量，特别涉及在碳化硅升华生长期间降低氮的掺入。 本发明通过在生长室中提供氢的环境气氛来控制生长中的碳化硅晶体中的氮浓度。 实际上，氢原子阻断，降低或以其他方式妨碍氮原子在生长晶体的表面的引入。

公开(公告)号：US20100320477A1

公开(公告)日：2010-12-23

申请号：US12871095

申请日：2010-08-30

申请人： Calvin H. Carter, JR. ,  Jason R. Jenny ,  David P. Malta ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Mrinal K. Das

发明人： Calvin H. Carter, JR. ,  Jason R. Jenny ,  David P. Malta ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Mrinal K. Das

IPC分类号： H01L29/24 ,  H01L29/868

CPC分类号： C30B29/36 ,  C30B33/02

摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

摘要翻译： 描述了一种用于生产具有增加的少数载流子寿命的碳化硅晶体的方法。 该方法包括以下步骤：加热并缓慢冷却具有第一浓度的少数载流子复合中心的碳化硅晶体，使得所得到的少数载流子复合中心的浓度低于第一浓度。

公开(公告)号：US07811943B2

公开(公告)日：2010-10-12

申请号：US11052679

申请日：2005-02-07

申请人： Calvin H. Carter, Jr. ,  Jason R. Jenny ,  David P. Malta ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Mrinal K. Das

发明人： Calvin H. Carter, Jr. ,  Jason R. Jenny ,  David P. Malta ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Mrinal K. Das

IPC分类号： H01L21/31

CPC分类号： C30B29/36 ,  C30B33/02

摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

摘要翻译： 描述了一种用于生产具有增加的少数载流子寿命的碳化硅晶体的方法。 该方法包括以下步骤：加热并缓慢冷却具有第一浓度的少数载流子复合中心的碳化硅晶体，使得所得到的少数载流子复合中心的浓度低于第一浓度。

公开(公告)号：US08618553B2

公开(公告)日：2013-12-31

申请号：US12871095

申请日：2010-08-30

申请人： Calvin H. Carter, Jr. ,  Jason R. Jenny ,  David P. Malta ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Mrinal K. Das

发明人： Calvin H. Carter, Jr. ,  Jason R. Jenny ,  David P. Malta ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov ,  Mrinal K. Das

IPC分类号： H01L29/15

CPC分类号： C30B29/36 ,  C30B33/02

摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

摘要翻译： 描述了一种用于生产具有增加的少数载流子寿命的碳化硅晶体的方法。 该方法包括以下步骤：加热并缓慢冷却具有第一浓度的少数载流子复合中心的碳化硅晶体，使得所得到的少数载流子复合中心的浓度低于第一浓度。

公开(公告)号：US06964917B2

公开(公告)日：2005-11-15

申请号：US10249425

申请日：2003-04-08

申请人： Valeri F. Tsvetkov ,  Hudson M. Hobgood ,  Calvin H. Carter, Jr. ,  Jason R. Jenny

发明人： Valeri F. Tsvetkov ,  Hudson M. Hobgood ,  Calvin H. Carter, Jr. ,  Jason R. Jenny

IPC分类号： C30B31/00 ,  C30B31/20 ,  H01L21/261 ,  H01L21/425 ,  H01L21/265

CPC分类号： H01L21/0445 ,  C30B29/36 ,  C30B31/00 ,  C30B31/20 ,  H01L21/263 ,  Y10S438/931

摘要： A method is disclosed for producing highly uniform semi-insulating characteristics in single crystal silicon carbide for semiconductor applications. The method includes irradiating a silicon carbide single crystal having net p-type doping and deep levels with neutrons until the concentration of 31P equals or exceeds the original net p-type doping while remaining equal to or less than the sum of the concentration of deep levels and the original net p-type doping.

摘要翻译： 公开了用于在用于半导体应用的单晶碳化硅中产生高度均匀的半绝缘特性的方法。 该方法包括用具有净p型掺杂和深层级的中子照射具有等于或小于原始净p型掺杂的浓度的等于或小于等于或等于 深层次浓度和原始净p型掺杂的总和。

公开(公告)号：US08163086B2

公开(公告)日：2012-04-24

申请号：US11846574

申请日：2007-08-29

申请人： Stephan G. Mueller ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov

发明人： Stephan G. Mueller ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov

IPC分类号： C30B21/02 ,  C30B21/04

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B25/00 ,  Y10T117/10 ,  Y10T117/1008

摘要： A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.

摘要翻译： 公开了一种用于碳化硅的物理蒸气传输增长技术。 该方法包括以下步骤：将碳化硅粉末和碳化硅晶种引入物理蒸气迁移生长系统中，将加热的硅 - 卤素气体组合物分别以小于化学计量量的硅 碳化硅源粉末使得碳化硅源粉末保持用于晶体生长的化学计量主要来源，并且以促进粉末物质和引入的硅的物理蒸汽输送的方式加热源粉末，气体组成和晶种 - 卤素物种到晶种以促进晶种上的体积生长。

公开(公告)号：US20090056619A1

公开(公告)日：2009-03-05

申请号：US11846574

申请日：2007-08-29

申请人： Stephan G. Mueller ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov

发明人： Stephan G. Mueller ,  Hudson M. Hobgood ,  Valeri F. Tsvetkov

IPC分类号： C30B25/00

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B25/00 ,  Y10T117/10 ,  Y10T117/1008

摘要： A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.

摘要翻译： 公开了一种用于碳化硅的物理蒸气传输增长技术。 该方法包括以下步骤：将碳化硅粉末和碳化硅晶种引入物理蒸气迁移生长系统中，将加热的硅 - 卤素气体组合物分别以小于化学计量量的硅 碳化硅源粉末使得碳化硅源粉末保持用于晶体生长的化学计量主要来源，并且以促进粉末物质和引入的硅的物理蒸汽输送的方式加热源粉末，气体组成和晶种 - 卤素物种到晶种以促进晶种上的体积生长。

公开(公告)号：US07880171B2

公开(公告)日：2011-02-01

申请号：US11022520

申请日：2004-12-22

申请人： Joseph J. Sumakeris ,  Ranbir Singh ,  Michael James Paisley ,  Stephan Georg Mueller ,  Hudson M. Hobgood ,  Calvin H. Carter, Jr. ,  Albert Augustus Burk, Jr.

发明人： Joseph J. Sumakeris ,  Ranbir Singh ,  Michael James Paisley ,  Stephan Georg Mueller ,  Hudson M. Hobgood ,  Calvin H. Carter, Jr. ,  Albert Augustus Burk, Jr.

IPC分类号： H01L31/0312

CPC分类号： H01L29/1608 ,  C30B19/00 ,  C30B23/002 ,  C30B25/02 ,  C30B29/36 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/732 ,  H01L29/744 ,  H01L29/861

摘要： A bipolar device has at least one p− type layer of single crystal silicon carbide and at least one n− type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.

摘要翻译： 双极器件具有至少一个单晶碳化硅的p型层和至少一个单晶碳化硅的n型层，其中在正向操作下生长的那些堆垛层错的那些部分与至少一个 活动区域和设备的其余部分之间的接口。

公开(公告)号：US06849874B2

公开(公告)日：2005-02-01

申请号：US10046346

申请日：2001-10-26

申请人： Joseph J. Sumakeris ,  Ranbir Singh ,  Michael James Paisley ,  Stephan Georg Mueller ,  Hudson M. Hobgood ,  Calvin H. Carter, Jr. ,  Albert Augustus Burk, Jr.

发明人： Joseph J. Sumakeris ,  Ranbir Singh ,  Michael James Paisley ,  Stephan Georg Mueller ,  Hudson M. Hobgood ,  Calvin H. Carter, Jr. ,  Albert Augustus Burk, Jr.

IPC分类号： H01L29/24 ,  H01L29/732 ,  H01L29/744 ,  H01L29/861 ,  H01L29/161

CPC分类号： H01L29/1608 ,  C30B19/00 ,  C30B23/002 ,  C30B25/02 ,  C30B29/36 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/732 ,  H01L29/744 ,  H01L29/861

摘要： A bipolar device has at least one p-type layer of single crystal silicon carbide and at least one n-type layer of single crystal silicon carbide, wherein those portions of those stacking faults that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.