公开(公告)号：US07674716B2

公开(公告)日：2010-03-09

申请号：US11319071

申请日：2005-12-28

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Jeong Jin Hong ,  Young Jun Hong ,  No Ma Kim ,  An Na Lee

IPC分类号： H01L21/302

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms a adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material to cationically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

摘要翻译： 公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的佐剂，其在阳离子充电材料上形成吸附层，以增加阴离子充电材料对阳离子电荷材料的抛光选择性，其中佐剂 包括聚电解质盐，其包含：（a）重均分子量为1,000〜20,000的接枝型聚电解质，其包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

公开(公告)号：US20120187333A1

公开(公告)日：2012-07-26

申请号：US13420815

申请日：2012-03-15

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

摘要翻译： 公开了一种用于同时抛光阳离子充电材料和阴离子充电材料的助剂，其中助剂包含聚电解质盐，该聚电解质盐包含：（a）重均分子量为2,000〜50,000的线性聚电解质与 接枝型聚电解质，其重均分子量为1,000〜20,000，包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。 包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与 接枝型聚电解质。

公开(公告)号：US08147711B2

公开(公告)日：2012-04-03

申请号：US12086155

申请日：2006-12-08

申请人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K13/00

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.

摘要翻译： 公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。 还公开了包含佐剂的CMP浆料。 助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。 当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化 在外力下的粘度并且在抛光过程中最小化微细纹的产生。 因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

公开(公告)号：US20090267020A1

公开(公告)日：2009-10-29

申请号：US12086155

申请日：2006-12-08

申请人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Jung Hee Lee ,  Jong Pil Kim ,  Gi Ra Yi ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： C09K3/14

CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L21/31053

摘要： Disclosed is an adjuvant for controlling polishing selectivity when polishing a cationically charged material simultaneously with an anionically charged material. CMP slurry comprising the adjuvant is also disclosed. The adjuvant comprises: (a) a polyelectrolyte that forms an adsorption layer on the cationically charged material in order to increase the polishing selectivity of the anionically charged material; (b) a basic material; and (c) a fluorine-based compound. when the adjuvant for controlling polishing selectivity of CMP slurry according to the present invention is applied to a CMP process, it is possible to increase the polishing selectivity of a silicon oxide layer, to obtain a uniform particle size of CMP slurry, to stabilize variations in viscosity under an external force and to minimize generation of microscratches during a polishing process. Therefore, the adjuvant for CMP slurry according to the present invention can improve reliability and productivity during the fabrication of very large scale integrated semiconductors.

摘要翻译： 公开了用于在与阴离子充电材料同时研磨阳离子充电材料时控制抛光选择性的佐剂。 还公开了包含佐剂的CMP浆料。 助剂包括：（a）在阳离子充电材料上形成吸附层的聚电解质，以增加阴离子充电材料的抛光选择性; （b）基本材料; 和（c）氟系化合物。 当将用于控制根据本发明的CMP浆料的抛光选择性的佐剂应用于CMP工艺时，可以增加氧化硅层的抛光选择性，以获得CMP浆料的均匀粒度，以稳定化 在外力下的粘度并且在抛光过程中最小化微细纹的产生。 因此，根据本发明的用于CMP浆料的助剂可以在制造非常大规模的集成半导体期间提高可靠性和生产率。

公开(公告)号：US08652967B2

公开(公告)日：2014-02-18

申请号：US13420815

申请日：2012-03-15

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

摘要翻译： 公开了一种用于同时抛光阳离子电荷材料和阴离子充电材料的佐剂，其中助剂包含聚电解质盐，其包含：（a）重均分子量为2,000〜50,000的线性聚电解质与 接枝型聚电解质，其重均分子量为1,000〜20,000，包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。 包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与 接枝型聚电解质。

公开(公告)号：US08163650B2

公开(公告)日：2012-04-24

申请号：US11634238

申请日：2006-12-06

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Jung Hee Lee ,  Kwang Ik Moon ,  Chang Bum Ko ,  Soon Ho Jang ,  Seung Beom Cho ,  Young Jun Hong

IPC分类号： H01L21/302

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/31053

摘要： Disclosed is an adjuvant for use in simultaneous polishing of a cationically charged material and an anionically charged material, which forms an adsorption layer on the cationically charged material in order to increase polishing selectivity of the anionically charged material, wherein the adjuvant comprises a polyelectrolyte salt containing: (a) a mixture of a linear polyelectrolyte having a weight average molecular weight of 2,000˜50,000 with a graft type polyelectrolyte that has a weight average molecular weight of 1,000˜20,000 and comprises a backbone and a side chain; and (b) a basic material. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed. The adjuvant comprising a mixture of a linear polyelectrolyte with a graft type polyelectrolyte makes it possible to increase polishing selectivity as compared to CMP slurry using the linear polyelectrolyte alone, and to obtain a desired range of polishing selectivity by controlling the ratio of the linear polyelectrolyte to the graft type polyelectrolyte.

摘要翻译： 公开了一种用于同时抛光阳离子电荷材料和阴离子充电材料的佐剂，其在阳离子电荷材料上形成吸附层，以增加阴离子带电材料的抛光选择性，其中助剂包含含有 ：（a）重均分子量为2,000〜50,000的线性聚电解质与重均分子量为1,000〜20,000的接枝型聚电解质的混合物，其包含骨架和侧链; 和（b）基本材料。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。 包含线性聚电解质与接枝型聚电解质的混合物的佐剂使得可以使用单独的线性聚电解质与CMP浆料相比提高抛光选择性，并且通过控制线性聚电解质与 接枝型聚电解质。

公开(公告)号：US20110108523A1

公开(公告)日：2011-05-12

申请号：US12838699

申请日：2010-07-19

申请人： Seung-Man Yang ,  Shin-Hyun Kim ,  Hyerim Hwang ,  Jae Won Shim ,  Gi-Ra Yi

发明人： Seung-Man Yang ,  Shin-Hyun Kim ,  Hyerim Hwang ,  Jae Won Shim ,  Gi-Ra Yi

IPC分类号： B29B9/16 ,  C08K3/22 ,  C08K3/20 ,  C08J3/28 ,  C08K3/04 ,  C08J9/26

CPC分类号： C08J9/26 ,  C08J2333/06

摘要： A method for fabrication of microparticles using a photo-polymerizable colloidal dispersant is provided. The method includes (a) preparing liquid droplets in a continuous phase from photo-polymerizable resin containing colloidal particles dispersed therein, then, allowing the colloidal particles to move toward an interface of the liquid droplets; and (b) UV exposing the liquid droplets to enable photo-polymerization thereof, so as to produce microparticles having a structure formed of colloidal particles on a surface of the microparticles. In addition, in order to improve the surface structure and characteristics, the foregoing method further includes (c) selective chemical reaction of the colloidal particles formed on the surface of the microparticles or, otherwise, removal of the colloidal particles.

摘要翻译： 提供了使用光聚合胶体分散剂制造微粒的方法。 该方法包括：（a）从含有分散在其中的胶体粒子的光聚合性树脂制备连续相的液滴，然后使胶体粒子向液滴的界面移动; 和（b）UV液体暴露液体以使其能够进行光聚合，从而产生具有由微粒表面上的胶体颗粒形成的结构的微粒。 此外，为了提高表面结构和特性，上述方法还包括（c）形成在微粒表面上的胶体颗粒的选择性化学反应，或者否则除去胶体颗粒。

公开(公告)号：US20100126367A1

公开(公告)日：2010-05-27

申请号：US12451225

申请日：2008-09-22

申请人： Ji-Su Kim ,  Kyoung-Su Jeon ,  Kyung-Soo Choi ,  Gi-Ra Yi ,  Seung-Heon Lee ,  Dong-Myung Shin

发明人： Ji-Su Kim ,  Kyoung-Su Jeon ,  Kyung-Soo Choi ,  Gi-Ra Yi ,  Seung-Heon Lee ,  Dong-Myung Shin

IPC分类号： B41N1/00 ,  G03F7/20

CPC分类号： G03F1/34 ,  C03C15/00 ,  C03C17/06 ,  C03C17/23 ,  C03C17/3665 ,  C03C2217/219 ,  C03C2217/26 ,  C03C2218/355 ,  G03F1/80

摘要： The present invention relates to a method for etching glass or metal using a negative photoresist and a method for fabricating a cliche using the same. In the method for etching glass or metal according to the present invention, since adhesion strength between the negative photoresist and the metal or the metal oxide is excellent, the photoresist layer is not corroded by the metal or metal oxide etching solution, it is unnecessary to produce an inverse photomask, the fabrication process is simple, and a low resolution light source such as mixed wavelength type light source is capable of being used, thus, economic efficiency is ensured.

摘要翻译： 本发明涉及一种使用负性光致抗蚀剂蚀刻玻璃或金属的方法，以及使用该光致抗蚀剂制造方法。 在根据本发明的用于蚀刻玻璃或金属的方法中，由于负性光致抗蚀剂和金属或金属氧化物之间的粘合强度优异，因此光致抗蚀剂层不被金属或金属氧化物蚀刻溶液腐蚀，因此不需要 产生反光掩模，制造工艺简单，并且能够使用诸如混合波长型光源的低分辨率光源，从而确保经济效率。

公开(公告)号：US08062395B2

公开(公告)日：2011-11-22

申请号：US11783742

申请日：2007-04-11

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Young Jun Hong

IPC分类号： B24D3/02 ,  C09C1/68 ,  C09K3/14

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

摘要： Disclosed is an adjuvant in use for a process of polishing a cationically charged material and an anionically charged material at the same time with abrasive particles, which is absorbed onto the cationically charged material thereby to restrain the cationically charged material from being polished, resulting in raising a polishing selectivity of the anionically charged material, wherein the adjuvant comprises polymer particles having a core-shell structure with a nano-scale particle size smaller than that of the abrasive particles, surfaces of which are anionically charged. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

摘要翻译： 公开了一种用于对阳离子充电材料和阴离子充电材料同时研磨磨料颗粒的方法的辅助剂，其被吸收到阳离子充电材料上，从而限制阳离子充电材料的抛光，从而提高 阴离子充电材料的抛光选择性，其中所述助剂包含具有小于磨料颗粒的纳米级粒径的核 - 壳结构的聚合物颗粒，其表面是阴离子充电的。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。

公开(公告)号：US20070243710A1

公开(公告)日：2007-10-18

申请号：US11783742

申请日：2007-04-11

申请人： Gi Ra Yi ,  Jong Pil Kim ,  Young Jun Hong

发明人： Gi Ra Yi ,  Jong Pil Kim ,  Young Jun Hong

IPC分类号： H01L21/461 ,  C09K13/00

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463

摘要： Disclosed is an adjuvant in use for a process of polishing a cationically charged material and an anionically charged material at the same time with abrasive particles, which is absorbed onto the cationically charged material thereby to restrain the cationically charged material from being polished, resulting in raising a polishing selectivity of the anionically charged material, wherein the adjuvant comprises polymer particles having a core-shell structure with a nano-scale particle size smaller than that of the abrasive particles, surfaces of which are anionically charged. CMP (chemical mechanical polishing) slurry comprising the above adjuvant and abrasive particles is also disclosed.

摘要翻译： 公开了一种用于对阳离子充电材料和阴离子充电材料同时研磨磨料颗粒的方法的辅助剂，其被吸收到阳离子充电材料上，从而限制阳离子充电材料的抛光，从而提高 阴离子充电材料的抛光选择性，其中所述助剂包含具有小于磨料颗粒的纳米级粒度的核 - 壳结构的聚合物颗粒，其表面是阴离子充电的。 还公开了包含上述助剂和磨料颗粒的CMP（化学机械抛光）浆料。