公开(公告)号：US08878349B2

公开(公告)日：2014-11-04

申请号：US13586309

申请日：2012-08-15

申请人： Gyu Jei Lee ,  Kang Won Lee ,  Hyun Joo Kim

发明人： Gyu Jei Lee ,  Kang Won Lee ,  Hyun Joo Kim

IPC分类号： H01L23/20

CPC分类号： H01L23/481 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor chip includes a semiconductor substrate having one surface, an other surface which faces away from the one surface, and through holes which pass through the one surface and the other surface; through electrodes filled in the through holes; and a gettering layer formed of polysilicon interposed between the through electrodes and inner surfaces of the semiconductor substrate whose form is defined by the through holes.

摘要翻译： 半导体芯片包括具有一个表面的半导体衬底，一个表面背离其他表面的半导体衬底以及穿过一个表面和另一个表面的通孔; 通过填充在通孔中的电极; 以及由介于通孔之间的多晶硅形成的吸杂层和形成由通孔限定的半导体衬底的内表面。

公开(公告)号：US08829657B2

公开(公告)日：2014-09-09

申请号：US13614924

申请日：2012-09-13

申请人： Hyun Joo Kim ,  Kang Won Lee ,  Gyu Jei Lee

发明人： Hyun Joo Kim ,  Kang Won Lee ,  Gyu Jei Lee

IPC分类号： H01L29/06

CPC分类号： H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/06156 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor substrate includes a substrate body divided into device regions and a peripheral region outside the device region, and having one surface, another surface substantially facing away from the one surface, trenches defined in the device regions under the one surface and inner surfaces which are formed due to defining of the trenches; active regions formed in the trenches; and a gettering layer formed between the inner surfaces of the substrate body and the active regions.

摘要翻译： 半导体衬底包括分为器件区域和器件区域外的周边区域的衬底体，并且具有一个表面，大体上背离所述一个表面的另一表面，在所述一个表面下的器件区域中限定的沟槽和内表面， 由于沟槽的界定而形成; 形成在沟槽中的有源区; 以及形成在基板主体的内表面和有源区之间的吸气层。

公开(公告)号：US20130241078A1

公开(公告)日：2013-09-19

申请号：US13586309

申请日：2012-08-15

申请人： Gyu Jei LEE ,  Kang Won LEE ,  Hyun Joo KIM

发明人： Gyu Jei LEE ,  Kang Won LEE ,  Hyun Joo KIM

IPC分类号： H01L23/48

CPC分类号： H01L23/481 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/15311 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor chip includes a semiconductor substrate having one surface, an other surface which faces away from the one surface, and through holes which pass through the one surface and the other surface; through electrodes filled in the through holes; and a gettering layer formed of polysilicon interposed between the through electrodes and inner surfaces of the semiconductor substrate whose form is defined by the through holes.

摘要翻译： 半导体芯片包括具有一个表面的半导体衬底，一个表面背离其他表面的半导体衬底以及穿过一个表面和另一个表面的通孔; 通过填充在通孔中的电极; 以及由介于通孔之间的多晶硅形成的吸杂层和形成由通孔限定的半导体衬底的内表面。

公开(公告)号：US20130240885A1

公开(公告)日：2013-09-19

申请号：US13565134

申请日：2012-08-02

申请人： Hyun Joo KIM ,  Kang Won LEE ,  Gyu Jei LEE

发明人： Hyun Joo KIM ,  Kang Won LEE ,  Gyu Jei LEE

IPC分类号： H01L29/16

CPC分类号： H01L25/0657 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/15311 ,  H01L2924/00

摘要： A semiconductor chip includes a semiconductor substrate including a substrate body divided into device regions and a peripheral region generally outside the device regions, and having one surface generally facing away from an other surface, and trenches which are defined generally in the device regions substantially on the one surface; and an active layer formed substantially in the trenches and made of polysilicon; semiconductor devices formed substantially over the active layer; and through electrodes substantially passing through the peripheral region of the substrate body.

摘要翻译： 半导体芯片包括半导体衬底，该半导体衬底包括被分为器件区域的衬底主体和大致在器件区域外部的周边区域，并且具有大致背离其它表面的一个表面，以及大致在器件区域中大体上限定在 一面 以及基本上形成在沟槽中并由多晶硅制成的有源层; 基本上形成在有源层上的半导体器件; 并且通过基本上穿过基板主体的周边区域的电极。

公开(公告)号：US20130264689A1

公开(公告)日：2013-10-10

申请号：US13614924

申请日：2012-09-13

申请人： Hyun Joo KIM ,  Kang Won LEE ,  Gyu Jei LEE

发明人： Hyun Joo KIM ,  Kang Won LEE ,  Gyu Jei LEE

IPC分类号： H01L29/06

CPC分类号： H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/06156 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/15311 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor substrate includes a substrate body divided into device regions and a peripheral region outside the device region, and having one surface, another surface substantially facing away from the one surface, trenches defined in the device regions under the one surface and inner surfaces which are formed due to defining of the trenches; active regions formed in the trenches; and a gettering layer formed between the inner surfaces of the substrate body and the active regions.

摘要翻译： 半导体衬底包括分为器件区域和器件区域外的周边区域的衬底体，并且具有一个表面，大体上背离所述一个表面的另一表面，在所述一个表面下的器件区域中限定的沟槽和内表面， 由于沟槽的界定而形成; 形成在沟槽中的有源区; 以及形成在基板主体的内表面和有源区之间的吸气层。