摘要:
A semiconductor chip includes a semiconductor substrate having one surface, an other surface which faces away from the one surface, and through holes which pass through the one surface and the other surface; through electrodes filled in the through holes; and a gettering layer formed of polysilicon interposed between the through electrodes and inner surfaces of the semiconductor substrate whose form is defined by the through holes.
摘要:
A semiconductor chip includes a semiconductor substrate including a substrate body divided into device regions and a peripheral region generally outside the device regions, and having one surface generally facing away from an other surface, and trenches which are defined generally in the device regions substantially on the one surface; and an active layer formed substantially in the trenches and made of polysilicon; semiconductor devices formed substantially over the active layer; and through electrodes substantially passing through the peripheral region of the substrate body.
摘要:
A semiconductor substrate includes a substrate body divided into device regions and a peripheral region outside the device region, and having one surface, another surface substantially facing away from the one surface, trenches defined in the device regions under the one surface and inner surfaces which are formed due to defining of the trenches; active regions formed in the trenches; and a gettering layer formed between the inner surfaces of the substrate body and the active regions.
摘要:
Cylindrical packages are provided. The cylindrical package includes a cylindrical substrate having a hollow region therein and at least one semiconductor chip mounted on an outer circumference of the cylindrical substrate. Related electronic products and related fabrication methods are also provided.
摘要:
A semiconductor package includes a semiconductor chip having a first surface, a second surface which faces away from the first surface, and through holes which pass through the first surface and the second surface; a dielectric layer formed on one or more of the first surface and the second surface and formed with grooves around the through holes on a fourth surface of the dielectric layer facing away from a third surface of the dielectric layer which is attached to the semiconductor chip; through-silicon vias filling the through holes; and bumps formed on the through-silicon vias and on portions of the dielectric layer around the through-silicon vias and filling the grooves.
摘要:
The present invention relates to a touch panel, more specifically a piezoresistive type touch panel. According to the present invention, it is provided a manufacturing method of a piezoresistive type touch panel, comprising manufacturing a polymer membrane in which a piezoresistive type film pattern, of which resistance varies with applied pressure, is embedded; manufacturing a spacer layer and attaching one side of the spacer layer to a surface of the polymer membrane; and then attaching a bottom substrate to the other side of the spacer layer.
摘要:
A system for and process of is provided for calculating SCR conversion efficiency by applying a reference control signal by which a urea dosing module is controlled to an NOx conversion value respectively in absorption and release modes of NH3 according to a loading amount of the NH3 determined from the SCR efficiency map. The system and process may include a process of determining the NOx conversion value according to a loading amount of NH3, a process of detecting the reference control signal of the dosing module injecting the urea solution, and a process of calculating the SCR conversion efficiency based on the determined NOx conversion value and reference control signal of the dosing module.