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公开(公告)号：US09120674B2
公开(公告)日：2015-09-01
申请号：US13546356
申请日：2012-07-11
申请人： Hanns Wochner , Thomas Gailer , Rudolf Kellner
发明人： Hanns Wochner , Thomas Gailer , Rudolf Kellner
IPC分类号： B08B3/08 , C01B33/037 , G05D9/00
CPC分类号： C01B33/037 , B08B3/08 , G05D9/00
摘要： Disclosed is a process for cleaning polycrystalline silicon chunks in an acidic cleaning bath, wherein: (a) the cleaning includes several cleaning cycles, (b) a particular amount of acid is consumed in each cycle, (c) a computer-controlled dosage system integrator adds up those amounts of acid consumed in each cycle to give a current total consumption of acid in the bath, and (d) on attainment of a total consumption of acid in the bath corresponding to an optimal dosage of the dosage system, the dosage system supplies this optimal dosage of unconsumed acid withdrawn from a reservoir vessel to the bath. Another process for cleaning polycrystalline silicon chunks in an acidic cleaning bath includes an acid circuit in which acid is circulated, wherein the ratio of amount of acid circulated in liters to the mass of polysilicon chunks present in the bath in kg is greater than 10.
摘要翻译： 公开了一种在酸性清洗浴中清洗多晶硅块的方法，其中：（a）清洁包括若干清洁循环，（b）在每个循环中消耗特定量的酸，（c）计算机控制的剂量系统 积分器将每个循环中消耗的酸的量相加，以给出浴中酸的当前总消耗量，以及（d）达到对应于剂量系统的最佳剂量的浴中的总酸消耗量，剂量 系统将从储存容器中取出的未消耗的酸的最佳剂量提供给浴。 用于在酸性清洗浴中清洗多晶硅块的另一种方法包括其中酸循环的酸性回路，其中以kg计循环的酸的量与浴中存在的多晶硅块的质量比以kg计大于10。
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公开(公告)号：US20110186087A1
公开(公告)日：2011-08-04
申请号：US12674299
申请日：2008-08-08
IPC分类号： B08B3/00
CPC分类号： C01B33/037
摘要： Polysilicon is freed of metallic impurities without the use of HCl or H2O2 by a preliminary cleaning with NHO3, HF, and H2SiF6 and a main cleaning with HNO3 and HF, followed by hydrophilization. The main cleaning solution can be cycled to the process as a preliminary cleaning solution component.
摘要翻译： 通过用NHO 3，HF和H 2 SiF 6的初步清洗和用HNO 3和HF进行主要清洗，然后亲水化，多晶硅不使用HCl或H 2 O 2而不含金属杂质。 主要的清洁溶液可以作为初步的清洁溶液组分循环到该过程中。
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公开(公告)号：US07736439B2
公开(公告)日：2010-06-15
申请号：US11764246
申请日：2007-06-18
IPC分类号： C23G1/02
CPC分类号： C01B33/037 , Y10S134/902
摘要： The present invention relates to a method for cleaning polycrystalline silicon fragments to a metal content of
摘要翻译： 本发明涉及一种清洗多晶硅碎片至金属含量<100ppbw的方法，其中将多晶硅部分加入到含有HF和H 2 O 2的含水清洗溶液中，除去该水性清洗溶液，由此得到的多晶级分为 用高纯水洗涤，随后干燥。
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4.发明授权Method for processing an etching mixture which is formed during the production of highly pure silicon 有权用于处理在高纯硅生产过程中形成的蚀刻混合物的方法公开(公告)号：US07922876B2
公开(公告)日：2011-04-12
申请号：US11842188
申请日：2007-08-21
IPC分类号： B01D3/00 , C01B33/037
CPC分类号： C01B33/037 , C01B7/196 , Y10S159/19 , Y10S423/01
摘要： In a method for recovering acid from an aqueous etching mixture containing HF, HNO3, H2SiF6 and HNO2 which has been used for purifying polycrystalline silicon, the used etching mixture is distilled progressively so that approximately from 20 to 50 wt. % of the mixture is distilled off as dilute acid containing more than 90 wt. % of the silicon dissolved as hexafluorosilicic acid in a first fraction, and the water contained in the used etching mixture having been reduced by approximately 10-30 wt. %, this water-depleted mixture is then concentrated by evaporation to a residue of about 1 to 5 wt. % of the initial amount of used etching mixture during which a second fraction is distilled off, and the residue is disposed of.
摘要翻译： 在从用于纯化多晶硅的HF，HNO 3，H 2 SiF 6和HNO 2的含水蚀刻混合物中回收酸的方法中，使用的蚀刻混合物逐渐蒸馏，使得约20至50wt。 将混合物的百分比作为含有大于90重量％的稀酸蒸馏出来。 在第一级分中溶解为六氟硅酸的硅的％，并且所使用的蚀刻混合物中所含的水已经减少了大约10-30重量％。 ％，然后将该贫水混合物通过蒸发浓缩至约1至5重量％的残余物。 所用蚀刻混合物的初始量的％，其中蒸馏出第二馏分，并且处理残余物。
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公开(公告)号：US06309467B1
公开(公告)日：2001-10-30
申请号：US09153197
申请日：1998-09-15
申请人： Hanns Wochner , Theresia Bauer , Josef Dietl , Werner Ott , Herbert Pichler , Wilhelm Schmidbauer , Dieter Seifert , Susanne Weizbauer
发明人： Hanns Wochner , Theresia Bauer , Josef Dietl , Werner Ott , Herbert Pichler , Wilhelm Schmidbauer , Dieter Seifert , Susanne Weizbauer
IPC分类号： C23G102
CPC分类号： H01L21/02052 , C01B33/037
摘要： Semiconductor material has a low metal concentration at the surface. The semiconductor material has an iron content and/or chromium content on the surface of less than 6.66×10−11 g/cm2. A method for producing this semiconductor material includes a preliminary cleaning, a main cleaning and hydrophilization. A device for use in this method has a container with pyramid-shaped recesses at the bottom.
摘要翻译： 半导体材料在表面具有低的金属浓度。 半导体材料的表面上的铁含量和/或铬含量小于6.66×10-11g / cm 2。 制造该半导体材料的方法包括预清洗，主清洗和亲水化。 在该方法中使用的装置具有在底部具有棱锥形凹部的容器。
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公开(公告)号：US6046117A
公开(公告)日：2000-04-04
申请号：US82865
申请日：1998-05-21
IPC分类号： H01L21/306 , H01L21/308
CPC分类号： H01L21/02019 , H01L21/30604 , Y02P80/30 , Y10S438/974
摘要： A process is taught for etching semiconductor wafers with an etching mixture comprising nitric and hydrofluoric acids and optionally a surfactant. To this mixture are added either more hydrofluoric acid, or more hydrofluoric and nitric acids, with the added acids having concentrations of at least 70% by weight. The use of concentrated acids reduces the loss of substrate material and extends etching bath life.
摘要翻译： 教导了用包括硝酸和氢氟酸以及任选的表面活性剂的蚀刻混合物蚀刻半导体晶片的方法。 向该混合物中加入更多的氢氟酸或更多的氢氟酸和硝酸，加入的酸的浓度至少为70重量％。 浓缩酸的使用减少了底物的损失，延长了蚀刻液的使用寿命。
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公开(公告)号：US08802208B2
公开(公告)日：2014-08-12
申请号：US12895923
申请日：2010-10-01
申请人： Hanns Wochner
发明人： Hanns Wochner
CPC分类号： A41D19/0006 , A41D19/001 , A41D19/01505
摘要： A breathable polyethylene glove as an overglove, over a cut- and puncture-resistant and nonfuzzing underglove, is useful for the non-contaminating packing of high-purity silicon, such as chunk polysilicon and silicon wafers.
摘要翻译： 透气的聚乙烯手套作为一种耐磨，耐穿刺和不起泡的底层，可用于高纯度硅（如块状多晶硅和硅片）的无污染包装。
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公开(公告)号：US20100154357A1
公开(公告)日：2010-06-24
申请号：US12664418
申请日：2008-06-05
申请人： Hanns Wochner , Bruno Lichtenegger , Reiner Pech
发明人： Hanns Wochner , Bruno Lichtenegger , Reiner Pech
摘要： An automated filling system for introducing crushed polysilicon fragments into shipping bags without significant contamination positions a freely suspended energy absorber into a freely suspended bag of non-contaminating material prior to filling, and following filling, the energy absorber is removed, and the bag is sealed. The system can replace manual packaging which has been required for semiconductor applications.
摘要翻译： 用于将破碎的多晶硅碎片引入运输袋而没有明显污染的自动填充系统将自由悬浮的能量吸收器在填充之前将自由悬浮的能量吸收剂定位到自由悬浮的无污染物质袋中，并且在填充之后，去除能量吸收器，并且将袋密封 。 该系统可以替代半导体应用所需的手动包装。
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9.发明申请公开(公告)号：US20080053815A1
公开(公告)日：2008-03-06
申请号：US11842188
申请日：2007-08-21
IPC分类号： B01D3/00
CPC分类号： C01B33/037 , C01B7/196 , Y10S159/19 , Y10S423/01
摘要： In a method for recovering acid from an aqueous etching mixture containing HF, HNO3, H2SiF6 and HNO2 which has been used for purifying polycrystalline silicon, the used etching mixture is distilled progressively so that approximately from 20 to 50 wt. % of the mixture is distilled off as dilute acid containing more than 90 wt. % of the silicon dissolved as hexafluorosilicic acid in a first fraction, and the water contained in the used etching mixture having been reduced by approximately 10-30 wt. %, this water-depleted mixture is then concentrated by evaporation to a residue of about 1 to 5 wt. % of the initial amount of used etching mixture during which a second fraction is distilled off, and the residue is disposed of.
摘要翻译： 在从含有HF，HNO 3，H 2 SiF 6和HNO 2的水性蚀刻混合物中回收酸的方法中， 已经用于纯化多晶硅的“SUB”，使用的蚀刻混合物逐渐蒸馏，使得大约20至50wt。 将混合物的百分比作为含有大于90重量％的稀酸蒸馏出来。 在第一级分中溶解为六氟硅酸的硅的％，并且所使用的蚀刻混合物中所含的水已经减少了大约10-30重量％。 ％，然后将该贫水混合物通过蒸发浓缩至约1至5重量％的残余物。 所用蚀刻混合物的初始量的％，其中蒸馏出第二馏分，并且处理残余物。
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公开(公告)号：US08833042B2
公开(公告)日：2014-09-16
申请号：US12664418
申请日：2008-06-05
申请人： Hanns Wochner , Bruno Lichtenegger , Reiner Pech
发明人： Hanns Wochner , Bruno Lichtenegger , Reiner Pech
摘要： An automated filling system for introducing crushed polysilicon fragments into shipping bags without significant contamination positions a freely suspended energy absorber into a freely suspended bag of non-contaminating material prior to filling, and following filling, the energy absorber is removed, and the bag is sealed. The system can replace manual packaging which has been required for semiconductor applications.
摘要翻译： 用于将破碎的多晶硅碎片引入运输袋而没有明显污染的自动填充系统将自由悬浮的能量吸收器在填充之前将自由悬浮的能量吸收剂定位到自由悬浮的无污染物质袋中，并且在填充之后，去除能量吸收器，并且将袋密封 。 该系统可以替代半导体应用所需的手动包装。
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