公开(公告)号：US20110070675A1

公开(公告)日：2011-03-24

申请号：US12884823

申请日：2010-09-17

申请人： Jyrki KIIHAMAKI ,  Hannu KATTELUS

发明人： Jyrki KIIHAMAKI ,  Hannu KATTELUS

IPC分类号： H01L21/02

CPC分类号： B81C1/00611 ,  B81C2201/0125

摘要： The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.

摘要翻译： 本发明涉及加速度传感器的制造方法。 在该方法中，使用薄SOI晶片结构，其中蚀刻凹槽，其壁被氧化。 覆盖所有其他材料的厚电极材料层生长在结构的顶部，然后将表面研磨并化学机械地抛光，在结构中蚀刻薄的释放孔，形成结构图案，最后使用 执行氢氟酸溶液以释放旨在移动并打开电容间隙的结构。

公开(公告)号：US20130147021A1

公开(公告)日：2013-06-13

申请号：US13806787

申请日：2011-06-21

申请人： Riikka Puurunen ,  Kimmo Henttinen ,  Hannu Kattelus ,  Tommi Suni

发明人： Riikka Puurunen ,  Kimmo Henttinen ,  Hannu Kattelus ,  Tommi Suni

IPC分类号： H01L21/02 ,  H01L29/02

CPC分类号： H01L21/0228 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/0167 ,  B81C2201/053 ,  B81C2203/0118 ,  H01L29/02

摘要： A method for manufacturing a multi-layer substrate structure such as a CSOI wafer structure (cavity-SOI, silicon-on-insulator) comprising obtaining a first and second wafer, such as two silicon wafers, wherein at least one of the wafers may be optionally provided with a material layer such as an oxide layer (302, 404), forming a cavity on the bond side of the first wafer (306, 406), depositing, preferably by ALD (Atomic Layer Deposition), a material layer, such as thin alumina layer, on either wafer arranged so as to at least in places face the other wafer and cover at least portion of the cavity of the first wafer, such as bottom, wall and/or edge thereof, and enable stopping etching, such as dry etching, into the underlying material (308, 408), and bonding the wafers provided with at least the aforesaid ALD layer as an intermediate layer together to form the multi-layer semiconductor substrate structure (310, 312). A related multi-layer substrate structure is presented.

摘要翻译： 一种用于制造诸如CSOI晶片结构（空腔SOI，绝缘体上硅）的多层衬底结构的方法，包括获得诸如两个硅晶片的第一和第二晶片，其中至少一个晶片可以是 可选地设置有诸如氧化物层（302,404）的材料层，在第一晶片（306,406）的接合侧上形成空腔，优选通过ALD（原子层沉积）沉积材料层，例如 作为薄氧化铝层，在任一晶片上布置成至少在面对另一晶片的位置并且覆盖第一晶片的空腔的至少一部分，例如底部，壁和/或边缘，并且能够停止蚀刻，例如 作为干蚀刻，进入下层材料（308,408），并且将设置有至少上述ALD层的晶片作为中间层结合在一起以形成多层半导体衬底结构（310,312）。 提出了相关的多层基板结构。

公开(公告)号：US20090206423A1

公开(公告)日：2009-08-20

申请号：US11920687

申请日：2006-06-02

申请人： Jyrki Kiihamaki ,  Hannu Kattelus

发明人： Jyrki Kiihamaki ,  Hannu Kattelus

IPC分类号： H01L29/84 ,  H01L21/306

CPC分类号： B81C1/00611 ,  B81C2201/0125

摘要： The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.

摘要翻译： 本发明涉及加速度传感器的制造方法。 在该方法中，使用薄SOI晶片结构，其中蚀刻凹槽，其壁被氧化。 覆盖所有其他材料的厚电极材料层生长在结构的顶部，然后将表面研磨并化学机械地抛光，在结构中蚀刻薄的释放孔，形成结构图案，最后使用 执行氢氟酸溶液以释放旨在移动并打开电容间隙的结构。

公开(公告)号：US20110279824A1

公开(公告)日：2011-11-17

申请号：US13146319

申请日：2010-01-27

申请人： Martti Blomberg ,  Hannu Kattelus ,  Riikka Puurunen

发明人： Martti Blomberg ,  Hannu Kattelus ,  Riikka Puurunen

IPC分类号： G01B9/02 ,  B05D5/06 ,  C23C14/34 ,  G02B26/00 ,  B05D5/12

CPC分类号： G02B26/001

摘要： Electrically tunable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Producing interferometers with prior art processes includes costly and complicated production phases. Therefore, it has not been possible to apply interferometers in consumer mass products. According to the present solution, the Fabry-Perot cavity is made by removing a sacrificial layer (112) which has been polymer material. A mirror layer (113, 117-120) which is produced above the sacrificial layer can be made with atomic layer deposition technology, for example. According to a preferable embodiment, electrodes (106b, 115b) of the mirror structures are formed by using sputtering or evaporation. With the present solution it is possible to avoid the above mentioned problems related with prior art.

摘要翻译： 使用微机械（MEMS）技术生产的电可调法布里 - 珀罗干涉仪。 用现有技术的工艺生产干涉仪包括昂贵且复杂的生产阶段。 因此，在消费者大众产品中不可能应用干涉仪。 根据本解决方案，通过去除已经是聚合物材料的牺牲层（112）来制造法布里 - 珀罗腔。 例如，可以用原子层沉积技术制造在牺牲层之上产生的镜面层（113,117-120）。 根据优选实施例，通过使用溅射或蒸发形成反射镜结构的电极（106b，115b）。 利用本解决方案，可以避免与现有技术相关的上述问题。

公开(公告)号：US5644676A

公开(公告)日：1997-07-01

申请号：US494636

申请日：1995-06-23

申请人： Martti Blomberg ,  Markku Orpana ,  Ari Lehto ,  Hannu Kattelus

发明人： Martti Blomberg ,  Markku Orpana ,  Ari Lehto ,  Hannu Kattelus

IPC分类号： H05B3/10 ,  G01J5/52 ,  H01K1/02 ,  H01K7/00 ,  H05B3/12

CPC分类号： H01K7/00 ,  G01J5/522 ,  H01K1/02

摘要： An electrically modulatable radiant source includes an essentially planar substrate, a well or hole formed in the substrate, and at least one incandescent filament attached to the substrate. The incandescent filament is aligned with the well or hole and is formed of a metallic compound which readily oxidizes at an operating temperature of the incandescent filament. An oxidation resistant film encapsulates the incandescent filament to prevent the filament from oxidizing. Furthermore, contact pads are formed on the substrate at both ends of the incandescent filament for feeding electric current to the incandescent filament.

摘要翻译： 电可调节辐射源包括基本上平面的基板，在基板中形成的阱或孔，以及附着到基板的至少一个白炽灯丝。 白炽丝与孔或孔对准，并由在白炽灯丝的工作温度下容易氧化的金属化合物形成。 耐氧化膜封装白炽灯丝以防止灯丝氧化。 此外，在白炽灯丝两端的基板上形成接触焊盘，以将电流馈送到白炽灯丝。

公开(公告)号：US08236694B2

公开(公告)日：2012-08-07

申请号：US12884823

申请日：2010-09-17

申请人： Jyrki Kiihamäki ,  Hannu Kattelus

发明人： Jyrki Kiihamäki ,  Hannu Kattelus

IPC分类号： H01L21/302

CPC分类号： B81C1/00611 ,  B81C2201/0125

摘要： The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.

摘要翻译： 本发明涉及加速度传感器的制造方法。 在该方法中，使用薄SOI晶片结构，其中蚀刻凹槽，其壁被氧化。 覆盖所有其他材料的厚电极材料层生长在结构的顶部，然后将表面研磨并化学机械地抛光，在结构中蚀刻薄的释放孔，形成结构图案，最后使用 执行氢氟酸溶液以释放旨在移动并打开电容间隙的结构。

公开(公告)号：US07882741B2

公开(公告)日：2011-02-08

申请号：US11920687

申请日：2006-06-02

申请人： Jyrki Kiihamäki ,  Hannu Kattelus

发明人： Jyrki Kiihamäki ,  Hannu Kattelus

IPC分类号： G01P15/125

CPC分类号： B81C1/00611 ,  B81C2201/0125

摘要： The present invention relates to a method for manufacturing an acceleration sensor. In the method, thin SOI-wafer structures are used, in which grooves are etched, the walls of which are oxidized. A thick layer of electrode material, covering all other material, is grown on top of the structures, after which the surface is ground and polished chemo-mechanically, thin release holes are etched in the structure, structural patterns are formed, and finally etching using a hydrofluoric acid solution is performed to release the structures intended to move and to open a capacitive gap.

摘要翻译： 本发明涉及加速度传感器的制造方法。 在该方法中，使用薄SOI晶片结构，其中蚀刻凹槽，其壁被氧化。 覆盖所有其他材料的厚电极材料层生长在结构的顶部，然后将表面研磨并化学机械地抛光，在结构中蚀刻薄的释放孔，形成结构图案，最后使用 执行氢氟酸溶液以释放旨在移动并打开电容间隙的结构。