公开(公告)号：US5663572A

公开(公告)日：1997-09-02

申请号：US406501

申请日：1995-03-20

申请人： Haruhisa Sakata ,  Katsuyuki Utaka ,  Yuichi Matsushima

发明人： Haruhisa Sakata ,  Katsuyuki Utaka ,  Yuichi Matsushima

IPC分类号： G02F3/02 ,  G02F1/015 ,  G02F1/017 ,  H01L27/15 ,  H01L29/205 ,  H01L29/68 ,  H01L29/88 ,  H01S5/00 ,  H01S5/026 ,  H01S5/40 ,  H01S5/50 ,  H01L29/06

CPC分类号： B82Y20/00 ,  G02F1/01725 ,  H01S5/0261 ,  H01S5/0262 ,  G02F2001/0155 ,  H01S5/4031

摘要： An optical functional semiconductor element which performs ultrafast, high-contrast logic operation through utilization of the high speed of light velocity. A resonant-tunneling diode having a negative resistance characteristic is provided apart from a light absorbing layer formed by one of i-type layers of what is called a triangular barrier diode of an nipin or pinip structure, by which as the quantity of incident light increases, the quantity of transmitted current is switched from increase to decrease, the amount of change is made high-contrast and an ultrafast logic operation can be performed.

摘要翻译： 一种光学功能半导体元件，其通过利用高速光速执行超快，高对比度的逻辑运算。 提供具有负电阻特性的谐振隧道二极管，与由夹持器或pinip结构的三角形阻挡二极管的i型层之一形成的光吸收层相隔开，通过该吸收层随着入射光量的增加 ，传输电流的数量从增加到减少，变化量变成高对比度，并且可以执行超快逻辑运算。

公开(公告)号：US6147901A

公开(公告)日：2000-11-14

申请号：US227618

申请日：1999-01-08

申请人： Haruhisa Sakata ,  Yasuyuki Nagao ,  Yuichi Matsushima

发明人： Haruhisa Sakata ,  Yasuyuki Nagao ,  Yuichi Matsushima

IPC分类号： G11C11/42 ,  G11C7/00 ,  G11C13/04 ,  G11C14/00 ,  H01L27/10 ,  H01L31/0248 ,  G11C11/36

CPC分类号： G11C14/00 ,  G11C13/04 ,  G11C7/005

摘要： The present invention provides a semiconductor memory capable of retaining information after removing a power supply and of storing information with an optical input. A memory cell is comprising an n-InP substrate, a first semiconductor (n-InGaAs) layer, a second semiconductor (i-InGaAs) layer, a third semiconductor (p-InGaAs) layer, a fourth semiconductor (i-InGaAs) layer and a fifth semiconductor (n-InGaAs) layer. The first to fifth semiconductor layers are stacked in this order on the n-InP substrate. A bias voltage is applied between the n-InP substrate and the fifth semiconductor layer to control a height of a TBD formed in the above multi-layer structure so that carriers may move and electrons can be stored in one of the second and fourth semiconductor layers.

摘要翻译： 本发明提供一种半导体存储器，其能够在去除电源之后保留信息并且使用光学输入存储信息。 存储单元包括n-InP衬底，第一半导体（n-InGaAs）层，第二半导体（i-InGaAs）层，第三半导体（p-InGaAs）层，第四半导体（i-InGaAs）层 和第五半导体（n-InGaAs）层。 第一至第五半导体层依次堆叠在n-InP衬底上。 在n-InP衬底和第五半导体层之间施加偏置电压以控制在上述多层结构中形成的TBD的高度，使得载流子可以移动，电子可以存储在第二和第四半导体层之一中 。

公开(公告)号：US5952683A

公开(公告)日：1999-09-14

申请号：US892775

申请日：1997-07-15

申请人： Haruhisa Sakata ,  Katsuyuki Utaka ,  Yuichi Matsushima

发明人： Haruhisa Sakata ,  Katsuyuki Utaka ,  Yuichi Matsushima

IPC分类号： H01L29/88 ,  G02F3/02 ,  H01L27/15 ,  H01L29/70 ,  H01L29/80 ,  H01L29/861 ,  H01L31/107 ,  H01L31/072

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  G02F3/026 ,  H01L29/70 ,  H01L29/8618 ,  H01L31/1075

摘要： A functional semiconductor element, which is designed to perform an ultrafast amplifying, bistable, similar functional operation by initiating and stopping an avalanche multiplication in one of i-type layers of what is called a triangular barrier diode (TBD) structure having an n-i-p-i-n, p-i-n-i-p, n-i-p-i-p, n-i-n-i-p, n-i-n-i-n, p-i-n-i-n, p-i-p-i-p, or p-i-p-i-n configuration. By forming a light absorbing layer and a light emitting layer or light modulating layer in this structure, it is possible to function the element as an optical functional element. Furthermore, the addition of a resonant tunneling diode implements a novel function.

摘要翻译： 一种功能半导体元件，其被设计为通过启动和停止所谓的三角形阻挡二极管（TBD）结构的i型层之一中的雪崩倍增来执行超快放大，双稳态，类似的功能操作，其具有钳口 ，nipip，ninip，ninin，pinin，pipip或pipin配置。 通过在该结构中形成光吸收层和发光层或光调制层，可以将该元件用作光学功能元件。 此外，添加谐振隧道二极管实现了新颖的功能。

公开(公告)号：US06377388B1

公开(公告)日：2002-04-23

申请号：US09717466

申请日：2000-11-20

申请人： Haruhisa Sakata ,  Kosuke Nishimura ,  Masashi Usami ,  Munefumi Tsurusawa

发明人： Haruhisa Sakata ,  Kosuke Nishimura ,  Masashi Usami ,  Munefumi Tsurusawa

IPC分类号： G02F100

CPC分类号： G02F2/004 ,  G02F1/3517

摘要： An optical signal processor is disclosed comprising a first optical path having a first electroabsorption optical modulator to be applied with a constant voltage and to absorb light of a signal wavelength, a second optical path having a fixed phase relation with the first optical path relative to a probe wavelength, a probe light introducer for dividing probe light of the probe wavelength into two portions and feeding them respectively into the first and second optical paths, an original signal light introducer for introducing original signal light of the signal wavelength into the first electroabsorption optical modulator, and a combiner for combining both light of the probe wavelength passed through the first and second paths.

摘要翻译： 公开了一种光信号处理器，其包括具有第一电吸收光调制器的第一光路，该第一光吸收光调制器被施加恒定电压并吸收信号波长的光，与第一光路相对于第一光路具有固定相位关系的第二光路 探针波长，用于将探测波长的探测光分成两部分并分别馈送到第一和第二光路中的探测光引导器，用于将信号波长的原始信号光引入第一电吸收光调制器的原始信号光引入器 以及组合器，用于组合穿过第一和第二路径的探针波长的光。