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公开(公告)号：US5663572A
公开(公告)日：1997-09-02
申请号：US406501
申请日：1995-03-20
IPC分类号： G02F3/02 , G02F1/015 , G02F1/017 , H01L27/15 , H01L29/205 , H01L29/68 , H01L29/88 , H01S5/00 , H01S5/026 , H01S5/40 , H01S5/50 , H01L29/06
CPC分类号： B82Y20/00 , G02F1/01725 , H01S5/0261 , H01S5/0262 , G02F2001/0155 , H01S5/4031
摘要： An optical functional semiconductor element which performs ultrafast, high-contrast logic operation through utilization of the high speed of light velocity. A resonant-tunneling diode having a negative resistance characteristic is provided apart from a light absorbing layer formed by one of i-type layers of what is called a triangular barrier diode of an nipin or pinip structure, by which as the quantity of incident light increases, the quantity of transmitted current is switched from increase to decrease, the amount of change is made high-contrast and an ultrafast logic operation can be performed.
摘要翻译： 一种光学功能半导体元件，其通过利用高速光速执行超快，高对比度的逻辑运算。 提供具有负电阻特性的谐振隧道二极管，与由夹持器或pinip结构的三角形阻挡二极管的i型层之一形成的光吸收层相隔开，通过该吸收层随着入射光量的增加 ，传输电流的数量从增加到减少，变化量变成高对比度，并且可以执行超快逻辑运算。
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公开(公告)号：US5952683A
公开(公告)日：1999-09-14
申请号：US892775
申请日：1997-07-15
IPC分类号： H01L29/88 , G02F3/02 , H01L27/15 , H01L29/70 , H01L29/80 , H01L29/861 , H01L31/107 , H01L31/072
CPC分类号： B82Y30/00 , B82Y10/00 , G02F3/026 , H01L29/70 , H01L29/8618 , H01L31/1075
摘要： A functional semiconductor element, which is designed to perform an ultrafast amplifying, bistable, similar functional operation by initiating and stopping an avalanche multiplication in one of i-type layers of what is called a triangular barrier diode (TBD) structure having an n-i-p-i-n, p-i-n-i-p, n-i-p-i-p, n-i-n-i-p, n-i-n-i-n, p-i-n-i-n, p-i-p-i-p, or p-i-p-i-n configuration. By forming a light absorbing layer and a light emitting layer or light modulating layer in this structure, it is possible to function the element as an optical functional element. Furthermore, the addition of a resonant tunneling diode implements a novel function.
摘要翻译： 一种功能半导体元件，其被设计为通过启动和停止所谓的三角形阻挡二极管（TBD）结构的i型层之一中的雪崩倍增来执行超快放大，双稳态，类似的功能操作，其具有钳口 ，nipip，ninip，ninin，pinin，pipip或pipin配置。 通过在该结构中形成光吸收层和发光层或光调制层，可以将该元件用作光学功能元件。 此外，添加谐振隧道二极管实现了新颖的功能。
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公开(公告)号：US6084997A
公开(公告)日：2000-07-04
申请号：US102714
申请日：1998-06-22
CPC分类号： G02F1/3132 , G02B6/12007 , G02B2006/12107 , G02B2006/12147 , G02F2201/305
摘要： The coupled waveguide structure comprises first and second rectangular waveguides, disposed closely. The aspect ratio of the first waveguide is substantially inverse in number to that of the second waveguide.
摘要翻译： 耦合波导结构包括紧密配置的第一和第二矩形波导。 第一波导的纵横比基本上与第二波导的纵横比成反比。
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公开(公告)号：US4918496A
公开(公告)日：1990-04-17
申请号：US213608
申请日：1988-06-30
CPC分类号： B82Y20/00 , H01S5/34313 , H01S2302/00 , H01S5/0206 , H01S5/3201 , H01S5/3218 , H01S5/3403 , H01S5/3409 , H01S5/34306
摘要： An infrared emitting device for use in the 2 to 3 .mu.m region, which is low in the threshold current and operates over a wide temperature range. In accordance with the present invention, an InP substrate is employed in place of GaSb substrate and InAs substrate heretofore employed for the 2 to 3 .mu.m infrared semiconductor lasers. Moreover, as active layers or clad layers, one of more semiconductor layers are employed which differ in lattice constant from the InP substrate.
摘要翻译： 一种用于2〜3μm区域的红外发射装置，其阈值电流低，在宽温度范围内工作。 根据本发明，使用InP衬底代替用于2至3μm红外半导体激光器的GaSb衬底和InAs衬底。 此外，作为有源层或覆层，采用与InP衬底的晶格常数不同的多个半导体层之一。
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公开(公告)号：US4826291A
公开(公告)日：1989-05-02
申请号：US882588
申请日：1986-07-07
CPC分类号： G03F7/001 , G02B5/1857 , Y10S359/90
摘要： A method is disclosed for manufacturing a diffraction grating formed by corrugations reversed in phase between a first region and a second region through use of two kinds of photoresists of opposite photosensitive characteristics. An isolation film is introduced for preventing the photoresists from getting mixed with each other, permitting the combined use of any photoresists. A step may be further included in which the isolation film is deposited on one of two kinds of photoresist films in at least one of a first region and a second region, is subjected to two-beam interference exposure, is removed and then a degraded layer, which is formed in the surface of the above said one kind of photoresist film during the deposition of the isolation film, is removed.
摘要翻译： 公开了一种用于制造通过使用具有相反感光特性的两种光致抗蚀剂在第一区域和第二区域之间相位相反的波纹形成的衍射光栅的方法。 引入隔离膜以防止光致抗蚀剂彼此混合，允许组合使用任何光致抗蚀剂。 可以进一步包括步骤，其中隔离膜沉积在第一区域和第二区域中的至少一个中的两种光致抗蚀剂膜中的一种上经受双光束干涉曝光，然后去除劣化层 ，在隔离膜沉积期间形成在上述一种光致抗蚀剂膜的表面上。
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6.发明授权Wavelength tunable semiconductor laser with narrow band-pass active filter region 失效具有窄带通有源滤波器区域的波长可调谐半导体激光器
公开(公告)号：US4852108A
公开(公告)日：1989-07-25
申请号：US216397
申请日：1988-07-07
申请人： Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
发明人： Katsuyuki Utaka , Kazuo Sakai , Yuichi Matsushima
IPC分类号： H01S5/00 , H01S5/0625 , H01S5/10 , H01S5/12 , H01S5/14
CPC分类号： H01S5/06258 , H01S5/10 , H01S5/1025 , H01S5/12 , H01S5/14 , Y10S372/704
摘要： A semiconductor laser is disclosed in which a light emitting region having a light emitting layer and a waveguide region having a waveguide layer which is coupled to at least one side of the light emitting layer with a high efficiency are integrated on the same substrate; the light emitting region includes an active filter section having a diffraction grating equipped with a band-pass filter function; the light emitting region and the waveguide region are electrically isolated and are each provided with an electrode; and the oscillation wavelength of the semiconductor lase is changed by changing the refractive indices of at least the waveguide region and the active filter section through voltage application or current injection to the electrodes, thereby producing a narrow-linewidth, single-wavelength oscillation output light of a wavelength which corresponds to the transmission wavelength of the active filter section determined by the preset refractive indices of the waveguide region and the active filter section.
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公开(公告)号：US4731641A
公开(公告)日：1988-03-15
申请号：US892479
申请日：1986-08-05
申请人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
发明人： Yuichi Matsushima , Kazuo Sakai , Yukitoshi Kushiro , Shigeyuki Akiba , Yukio Noda , Katsuyuki Utaka
IPC分类号： H01L31/107 , H01L31/18 , H01L29/201 , H01L27/14 , H01L31/08
CPC分类号： H01L31/1075 , H01L31/18
摘要： An avalanche photodiode with a quantum well layer in which a thin film, periodic multilayer structure composed of two different semiconductors is formed in a carrier multiplying region, the effective ionization coefficient ratio of carriers is raised by a quantum well layer formed by the thin film, multilayer periodic structure, and only electrons of large ionization coefficient are injected into the multiplying region, thereby to reduce noise in the APD.
摘要翻译： 具有量子阱层的雪崩光电二极管，其中在载流子倍增区域中形成由两个不同半导体构成的薄膜周期性多层结构，载流子的有效电离系数比由薄膜形成的量子阱层提高， 多层周期性结构，只有电离系数较大的电子注入乘法区域，从而降低APD中的噪声。
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公开(公告)号：US4682196A
公开(公告)日：1987-07-21
申请号：US806746
申请日：1985-12-09
IPC分类号： H01L29/205 , H01L31/0352 , H01L31/11 , H01L27/14 , H01L29/12
CPC分类号： H01L29/205 , H01L31/035281 , H01L31/11 , Y02E10/50
摘要： A semiconductor device, which is formed by a sequential lamination of a first semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3, a second semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, a third semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and a thickness less than 300 .ANG., a fourth semiconductor layer having a carrier concentration less than 10.sup.16 cm.sup.-3, and a fifth semiconductor layer having a carrier concentration more than 10.sup.17 cm.sup.-3 and, in which the first and fifth semiconductor layers are the same in conductivity type and the third semiconductor layer is different in conductivity type from the fifth semiconductor layer. In accordance with the present invention, the energy gap of the third semiconductor layer is larger than the energy gaps of the second and fourth semiconductor layers. An annular region of a semi-insulating material or of the same conductivity type as that of the third semiconductor layer may be formed around an active region to extend from the fifth semiconductor layer to the second semiconductor layer.
摘要翻译： 一种半导体器件，其通过顺次层叠具有载流子浓度大于1017cm -3的第一半导体层，载流子浓度小于1016cm-3的第二半导体层，具有载流子浓度的第三半导体层 大于1017cm-3，厚度小于300，载流子浓度小于1016cm-3的第四半导体层和载流子浓度大于1017cm-3的第五半导体层，其中第一 并且第五半导体层的导电类型相同，并且第三半导体层的导电类型与第五半导体层不同。 根据本发明，第三半导体层的能隙大于第二和第四半导体层的能隙。 可以在有源区周围形成半绝缘材料或与第三半导体层相同的导电类型的环形区域，以从第五半导体层延伸到第二半导体层。
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公开(公告)号：US4660934A
公开(公告)日：1987-04-28
申请号：US710984
申请日：1985-03-12
CPC分类号： G03F7/095 , G02B5/1857 , G03F7/001 , Y10S359/90
摘要： A method for manufacturing diffraction grating, in which after forming, on a substrate, one of a negative type photoresist film (an N film) and a positive type photoresist film (a P film) to cover a first region A and the other of the negative type photoresist film and the positive type photoresist film, or the latter film on the former one to cover a second region B, the first region and the second region are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film. Another feature of the present invention resides in that after forming, on a substrate, a structure in which a negative type photoresist film (an N film) is formed to cover only a first region A and the negative type photoresist film is formed on a positive type photoresist film (a P film) to cover a second region B, the first region and the second region of the substrate are subjected to two-beam interference exposure, thereby forming a diffraction grating in which corrugations in the first region and the second region are reverse in phase to each other, through utilization of characteristics of the negative type photoresist film and the positive type photoresist film.
摘要翻译： 制造衍射光栅的方法，其中在基板上形成负型光致抗蚀剂膜（N膜）和正型光致抗蚀剂膜（P膜）之一以覆盖第一区域A和另一个 负型光致抗蚀剂膜和正型光致抗蚀剂膜，或者在前者的后者膜覆盖第二区域B，第一区域和第二区域受到双光束干涉曝光，从而形成衍射光栅，其中波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，在第一区域和第二区域中的相位彼此相反。 本发明的另一个特征在于，在基板上形成后，形成负型光致抗蚀剂膜（N膜）仅覆盖第一区域A并且负型光致抗蚀剂膜形成为阳性的结构 （P膜）覆盖第二区域B，对基板的第一区域和第二区域进行双光束干涉曝光，从而形成衍射光栅，其中第一区域和第二区域中的波纹 通过利用负型光致抗蚀剂膜和正型光致抗蚀剂膜的特性，彼此相反。
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公开(公告)号：US4795225A
公开(公告)日：1989-01-03
申请号：US143816
申请日：1988-01-13
申请人： Kazuo Sakai , Yuichi Matsushima , Katsuyuki Utaka
发明人： Kazuo Sakai , Yuichi Matsushima , Katsuyuki Utaka
CPC分类号： B82Y20/00 , G02F1/01708 , G02F1/3138 , G02F2001/0152
摘要： An optical switch is disclosed in which a switching section for switching the optical path of an incident light is formed in a region where two semiconductor optical waveguides cross each other. The switching section is composed of n-, i-, p-, i- and n-type semiconductor layers laminated in that order, each i-type layer being formed by a superlattice layer composed of a plurality of semiconductor thin films so that the i-type layer is higher in the effective refractive index and smaller in the effective energy gap than each n-type layer. The impurity concentrations of the n-, i-, p-, i-, and n-type layers and the thicknesses of the i-, p-, and i-type layers are determined so that the i-, p- and i-type layers are depleted in a thermal equilibrium state.
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