公开(公告)号：US4260448A

公开(公告)日：1981-04-07

申请号：US889172

申请日：1978-03-23

申请人： Heinz Herzer

发明人： Heinz Herzer

IPC分类号： G21G1/06 ,  H01L21/261 ,  C30B31/20

CPC分类号： H01L21/261 ,  G21G1/06

摘要： A process for decreasing crystal damages in the production of n-doped silicon by neutron bombardment, in which phosphorus atoms are formed from silicon by nuclear transmutation, wherein the number of desired phosphorus atoms N.sub.31.sbsb.p per cc, can be calculated by the known equationN.sub.31.sbsb.p =N.sub.30.sbsb.Si .multidot..sigma..multidot..phi..multidot.tin which N.sub.30.sbsb.Si is the number of .sup.30 Si-isotopes per cc, .sigma.=0.13 barn effective cross section, .phi. the flux density of the thermal neutrons per cm.sup.2 and t the bombardment time in seconds, the process consisting of adjusting the ratio between thermal and fast neutrons in the neutron flux acting upon the bombarded silicon work piece, so that the higher the ratio, the higher the specific resistance of the bombarded silicon, and thus, the lower the number of N.sub.31.sbsb.p and therewith the acting dose .phi..multidot.t.

摘要翻译： 通过中子轰击减少在n掺杂硅中产生晶体损伤的方法，其中磷原子由硅通过核变换形成，其中所需磷原子数N31p / cc可以通过已知的方程式计算N31p = N30Six 西格玛x phi xtin，其中N30Si是每cc的30Si同位素数，sigma = 0.13巴有效截面，phi是每平方厘米热中子的通量密度，t是以秒为单位的轰击时间，该过程由调整 作用于被轰击的硅工件的中子通量中的热和快中子，使得比率越高，被轰击的硅的电阻率越高，因此N31p的数量越少，并且由此施加剂量。

公开(公告)号：US4140571A

公开(公告)日：1979-02-20

申请号：US840887

申请日：1977-10-11

申请人： Heinz Herzer ,  Helmut Zauhar ,  Eberhard Mucke ,  Franz Kohl

发明人： Heinz Herzer ,  Helmut Zauhar ,  Eberhard Mucke ,  Franz Kohl

IPC分类号： C30B13/00 ,  C30B13/20 ,  C30B13/28 ,  H01L21/208 ,  B01J17/10

CPC分类号： C30B13/285 ,  Y10S117/90 ,  Y10S117/911 ,  Y10T117/1084

摘要： A process for the crucible-free zone pulling of a polycrystalline rod heldertically, together with a seed crystal fixed at its lower end, in which a melting zone is produced by means of an induction heating coil surrounding the rod, which zone, by means of relative movement of the coil and rod, traverses the entire length of the rod starting from the seed crystal, characterized in that after attaching the seed crystal to the rod, a support member is moved, below the induction heating coil, towards the rod, which support member rests gently against the rod and after being positioned, solidifies to form a firm support for the rod. A device for carrying out the process is also included.

摘要翻译： 一种无坩埚区域牵引垂直保持的多晶棒的方法，以及固定在其下端的晶种，其中通过围绕杆的感应加热线圈产生熔融区，该区域通过装置 所述线圈和所述杆的相对运动通过从所述晶种开始的所述杆的整个长度，其特征在于，在将所述晶种连接到所述杆之后，支撑构件在所述感应加热线圈下方朝向所述杆移动， 该支撑构件轻轻靠在杆上并在定位之后固化以形成用于杆的坚固支撑。 还包括用于执行该过程的设备。

公开(公告)号：US4722764A

公开(公告)日：1988-02-02

申请号：US859210

申请日：1986-05-01

申请人： Heinz Herzer ,  Wolfgang Hensel ,  Gunter Matuszak

发明人： Heinz Herzer ,  Wolfgang Hensel ,  Gunter Matuszak

IPC分类号： C30B13/00 ,  C30B29/06 ,  C30B13/16

CPC分类号： C30B29/06 ,  C30B13/00

摘要： A method for crucible-free zone pulling of silicon monocrystalline rods is described. According to the invention, a polycrystalline silicon rod obtained by crucible pulling according to the Czochralski procedure is used in lieu of the polycrystalline silicon rod produced by vapor deposition.

摘要翻译： 描述了一种用于无硅区域拉拔硅单晶棒的方法。 根据本发明，使用通过Czochralski方法的坩埚拉拔获得的多晶硅棒代替通过气相沉积产生的多晶硅棒。

公开(公告)号：US4210486A

公开(公告)日：1980-07-01

申请号：US773571

申请日：1977-03-02

申请人： Dietrich Schmidt ,  Johann Hofer ,  Heinz Herzer

发明人： Dietrich Schmidt ,  Johann Hofer ,  Heinz Herzer

IPC分类号： G01N27/00 ,  C30B13/00 ,  C30B13/12 ,  C30B13/28 ,  C30B29/06 ,  H01L21/66 ,  B01J17/34

CPC分类号： C30B29/06 ,  C30B13/12 ,  C30B13/28 ,  Y10S117/906

摘要： A process for determining the effective doping agent content of hydrogen the production of semiconductors which comprises zone drawing a silicon rod of highest purity and having a known specific resistance, in the presence of hydrogen to be tested, subsequently redetermining the specific resistance of the silicon rod, and computing the concentration of the doping agent in the hydrogen used from the known relationship between the specific resistance and the amount of doping agent. By stepwise determination of the resistance along the longitudinal axis of the rod, the amount of doping agent built into the rod at different levels can thus be determined.

摘要翻译： 一种用于确定用于生产半导体的氢的有效掺杂剂含量的方法，其包括在待测试的氢的存在下拉伸具有最高纯度并具有已知电阻率的硅棒，随后重新确定硅的电阻率 并根据电阻率和掺杂剂的量之间的已知关系计算所用氢中掺杂剂的浓度。 通过逐步确定沿着杆的纵向轴线的电阻，可以确定在不同级别内置于棒中的掺杂剂的量。

公开(公告)号：US4231755A

公开(公告)日：1980-11-04

申请号：US907442

申请日：1978-05-19

申请人： Heinz Herzer ,  Heinz-Jorg Rath ,  Dietrich Schmidt

发明人： Heinz Herzer ,  Heinz-Jorg Rath ,  Dietrich Schmidt

IPC分类号： B01D9/02 ,  B01D9/00 ,  C01B33/037 ,  C22B9/02 ,  C22B41/00 ,  B01D9/04

CPC分类号： C01B33/037 ,  B01D9/0013 ,  C22B41/00 ,  C22B9/02 ,  Y02P10/234

摘要： A process for purifying solid substances by melting and subsequent resoliication, wherein a melted bath of the solid substance is formed, a roller is placed in the bath so that a first portion of its surface is in contact with the melted substance, and the surface of the roller is cooled to a temperature below the melting point of the solid substance. The cooled roller is rotated in the melted substance to collect a solidified film of the substance on the roller surface. A second portion of the roller surface is passed through a heated zone at a temperature above the melting point of the solid substance, so that the solidified film is remelted and collected in an appliance.

摘要翻译： 一种通过熔融和随后的重新固化纯化固体物质的方法，其中形成固体物质的熔融浴，将辊放置在浴中，使得其表面的第一部分与熔融物质接触， 将辊冷却至低于固体物质熔点的温度。 冷却的辊在熔融物质中旋转以在辊表面上收集物质的固化膜。 辊表面的第二部分在高于固体物质的熔点的温度下通过加热区域，使得固化的膜被重熔并收集在器具中。

公开(公告)号：US4060392A

公开(公告)日：1977-11-29

申请号：US687711

申请日：1976-05-19

申请人： Heinz Herzer ,  Helmut Zauhar

发明人： Heinz Herzer ,  Helmut Zauhar

IPC分类号： C30B13/32 ,  C30B13/28 ,  H01L21/208 ,  B01J17/10

CPC分类号： C30B13/285 ,  Y10S117/911 ,  Y10S269/903 ,  Y10T117/1084

摘要： Device for supporting a crystalline rod during crucible-free zone melting ich comprises a zone-drawing apparatus, a rotating shaft in said apparatus, means for fastening the shaft in the apparatus, a screw bolt mounted for rotation with the shaft, the top end of the screw bolt having a bore for receiving a seed crystal, two or more swivel arms mounted adjacent to the bore and capable of being opened and closed, a ring coaxially surrounding the bolt and means for vertically moving the ring.

摘要翻译： 用于在无坩埚区域熔化期间支撑结晶棒的装置，其包括区域拉伸装置，所述装置中的旋转轴，用于将轴紧固在装置中的装置，安装成与轴一起旋转的螺栓， 所述螺栓具有用于接收晶种的孔，邻近所述孔安装并能够打开和关闭的两个或更多个旋转臂，同轴地围绕所述螺栓的环和用于垂直移动所述环的装置。