公开(公告)号：US4210486A

公开(公告)日：1980-07-01

申请号：US773571

申请日：1977-03-02

申请人： Dietrich Schmidt ,  Johann Hofer ,  Heinz Herzer

发明人： Dietrich Schmidt ,  Johann Hofer ,  Heinz Herzer

IPC分类号： G01N27/00 ,  C30B13/00 ,  C30B13/12 ,  C30B13/28 ,  C30B29/06 ,  H01L21/66 ,  B01J17/34

CPC分类号： C30B29/06 ,  C30B13/12 ,  C30B13/28 ,  Y10S117/906

摘要： A process for determining the effective doping agent content of hydrogen the production of semiconductors which comprises zone drawing a silicon rod of highest purity and having a known specific resistance, in the presence of hydrogen to be tested, subsequently redetermining the specific resistance of the silicon rod, and computing the concentration of the doping agent in the hydrogen used from the known relationship between the specific resistance and the amount of doping agent. By stepwise determination of the resistance along the longitudinal axis of the rod, the amount of doping agent built into the rod at different levels can thus be determined.

摘要翻译： 一种用于确定用于生产半导体的氢的有效掺杂剂含量的方法，其包括在待测试的氢的存在下拉伸具有最高纯度并具有已知电阻率的硅棒，随后重新确定硅的电阻率 并根据电阻率和掺杂剂的量之间的已知关系计算所用氢中掺杂剂的浓度。 通过逐步确定沿着杆的纵向轴线的电阻，可以确定在不同级别内置于棒中的掺杂剂的量。

公开(公告)号：US3616527A

公开(公告)日：1971-11-02

申请号：US3616527D

申请日：1968-07-15

申请人： NCR CO

发明人： JANNING JOHN L

IPC分类号： C30B31/02 ,  H01L21/00 ,  H01L29/00 ,  B01J17/34

CPC分类号： H01L21/00 ,  C30B31/02 ,  H01L29/00 ,  Y10S148/053 ,  Y10S148/063 ,  Y10S148/15 ,  Y10S438/919

摘要： THE PRESENT INVENTION RELATES TO A METHOD OF ACCURATELY DOPING A SEMICONDUCTOR MATERIAL SO AS TO CONTROL THE ELECTRICAL CONDUCTIVITY OF SAID DOPED SEMICONDUCTOR MATERIAL LAYER, SUCH AS A DOPED SEMICONDUCTOR MATERIAL LAYER WITHIN A THIN FILM INSULATED GATE FIELD EFFECT SEMICONDUCTOR DEVICE, BY DEPOSITING A THIN FILM OF DOPANT ATOMS UPON A SUBSTRATE, AS BETWEEN A SOURCE ELECTRODE LAYER AND A DRAIN ELECTODE LAYER WHICH ARE UPON A SUBSTRATE, AND EVAPORATING SAID SEMICONDUCTOR MATERIAL LAYER UPON SAID THIN FILM OF DOPANT ATOMS.

公开(公告)号：US3698071A

公开(公告)日：1972-10-17

申请号：US3698071D

申请日：1968-02-19

申请人： TEXAS INSTRUMENTS INC

发明人： HALL LOU H

IPC分类号： H01L29/78 ,  C01F7/02 ,  C23C16/40 ,  H01L21/00 ,  H01L21/316 ,  H01L21/329 ,  H01L23/29 ,  H01L29/00 ,  B01J17/34 ,  B44D1/18

CPC分类号： H01L23/291 ,  C01F7/02 ,  C23C16/403 ,  H01L21/00 ,  H01L24/05 ,  H01L24/06 ,  H01L29/00 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2224/49107 ,  H01L2924/1306 ,  H01L2924/00

摘要： This invention record discloses an improvement in a method for forming aluminum oxide films characterized by being formed from trimethyl aluminum and nitrous oxide at a reaction temperature of 600*-900*C. The films are deposited over components formed in a semiconductor material. By this means a special high resistivity insulating film is formed and a shallow region of P-type conductivity is induced at the surface of the semiconductor material. Also disclosed are electronic devices employing the high resistivity aluminum oxide film.

摘要翻译： 本发明记录公开了一种形成氧化铝膜的方法的改进，其特征在于在600-900℃的反应温度下由三甲基铝和一氧化二氮形成。将膜沉积在形成于半导体材料中的组分上。 由此，形成特殊的高电阻绝缘膜，在半导体材料的表面形成P型导电性浅的区域。 还公开了采用高电阻率氧化铝膜的电子器件。

公开(公告)号：US3696028A

公开(公告)日：1972-10-03

申请号：US3696028D

申请日：1970-08-24

申请人： NORMAN N LI ,  ROBERT B LONG

发明人： LI NORMAN N ,  LONG ROBERT B

IPC分类号： B01D61/40 ,  C07C7/144 ,  C10G21/00 ,  C10G31/11 ,  C10G21/10 ,  B01J17/34

CPC分类号： C10G21/00 ,  B01D61/40 ,  C07C7/144 ,  C10G31/11

摘要： A PROCESS FOR SEPARATING COMPONENTS OF A HYDROCARBON MIXTURE BY SELECTIVE PERMEATION THROUGH A LIQUID SURFACTANT MEMBRANE CONTAINING A POLAR ADDITIVE.

公开(公告)号：US3426424A

公开(公告)日：1969-02-11

申请号：US3426424D

申请日：1966-08-02

申请人： SIEMENS AG

发明人： TOUCHY WOLFGANG

IPC分类号： H04R23/00 ,  B01J17/34 ,  H01L7/02 ,  H01L7/32

CPC分类号： H04R23/006 ,  Y10S438/912

公开(公告)号：US4087902A

公开(公告)日：1978-05-09

申请号：US699012

申请日：1976-06-23

申请人： William R. Feltner

发明人： William R. Feltner

IPC分类号： H01L29/78 ,  H01L21/265 ,  H01L21/86 ,  H01L29/786 ,  B01J17/34

CPC分类号： H01L21/86 ,  H01L29/78621

摘要： A field effect transistor and method of making the same wherein a semi-conductor layer is placed on an insulating substrate, and wherein the gate region is separated from source and drain regions of a like conductivity type to that of the source and drain regions but of reduced conductivity, the gate electrode and gate region of the layer being of generally reduced length, and the gate region being of greatest length on its surface closest to the gate electrode. This is accomplished by initially creating a relatively large gate region of one polarity, and then reversing the polarity of a central portion of this gate region by ion bombardment, thus achieving a narrower final gate region of the stated configuration.

摘要翻译： 一种场效应晶体管及其制造方法，其中将半导体层放置在绝缘基板上，并且其中栅极区域与源极和漏极区域的类似导电类型的源极和漏极区域分离，但是 导电性降低，该层的栅极电极和栅极区域通常具有减小的长度，栅极区域在最靠近栅电极的表面上具有最大长度。 这通过最初产生一个极性的相对较大的栅极区域，然后通过离子轰击来反转该栅极区域的中心部分的极性来实现，从而实现所述构造的较窄的最终栅极区域。

公开(公告)号：US4048508A

公开(公告)日：1977-09-13

申请号：US603680

申请日：1975-08-11

申请人： Joachim Martin ,  Ernst Haas ,  Manfred Schnoeller

发明人： Joachim Martin ,  Ernst Haas ,  Manfred Schnoeller

IPC分类号： C30B31/20 ,  G21G1/06 ,  G21K1/00 ,  G21K5/08 ,  H01L21/261 ,  B01J17/34

CPC分类号： G21K1/00 ,  C30B31/20 ,  G21K5/08

摘要： An apparatus for doping a semiconductor crystalline rod by nuclear or radiogenic reactions comprised of a hollow irradiation housing having axially and rotatably movable rod support means within the chamber thereof and a neutron conductive sleeve connected with the housing and providing communication between a neutron source and the housing chamber. Accurate and controlled doping of a semiconductor crystalline rod mounted on the rod support means within the housing chamber occurs via controlled rod movement in relation to the neutron source.

摘要翻译： 一种用于通过核或放射反应掺杂半导体晶体棒的装置，包括在其室内具有轴向和可旋转地移动的杆支撑装置的中空辐射壳体和与壳体连接并提供中子源和壳体之间的连通的中子导电套筒 房间。 安装在壳体室内的杆支撑装置上的半导体晶体棒的精确和受控的掺杂通过相对于中子源的受控棒移动发生。

公开(公告)号：US3793095A

公开(公告)日：1974-02-19

申请号：US3793095D

申请日：1971-04-19

申请人： SIEMENS AG

发明人： SCHINK N

IPC分类号： H01L21/00 ,  H01L29/00 ,  H01L29/167 ,  H01L7/36 ,  B01J17/34

CPC分类号： H01L29/167 ,  H01L21/00 ,  H01L29/00 ,  Y10S438/909

摘要： To remove atomic hydrogen which forms recombination centers from silicon wafers, the silicon wafers used for indiffusing or inalloying a foreign substance, are heated in a closed processing vessel whereinto is placed a catalyst, preferably divalent lead ions, which accelerates the formation of molecular hydrogen from atomic hydrogen.

摘要翻译： 为了除去从硅晶片形成复合中心的原子氢，用于将异物分散或合金化的硅晶片在封闭的处理容器中加热，放置催化剂，优选二价引线离子，其加速分子的形成 氢原子氢。

公开(公告)号：US3568306A

公开(公告)日：1971-03-09

申请号：US3568306D

申请日：1966-09-20

申请人： MATSUSHITA ELECTRIC IND CO LTD

发明人： YAMASHITA KAZUO

IPC分类号： H01L21/00 ,  H01L31/00 ,  H01L31/18 ,  B01J17/34 ,  C23B5/48 ,  H01M15/02

CPC分类号： H01L31/00 ,  H01L21/00 ,  H01L31/18 ,  Y10S148/064 ,  Y10S148/153

摘要： A METHOD OF MAKING A PHOTOVOLTAIC CELL EMPLOYING POWDERED POLYCRYSTALLINE PHOTOELECTRIC MATERIAL, THE METHOD COMPRISING, FORMING AT LEAST ONE ELECTRODE ON A PHOTOELECTRIC LAYER AND ELECTROPLATING A P-TYPE DETERMINING METAL, SUCH AS COPPER, ON SAID ELECTRODE AT LEAST PARTIALLY THROUGH THE PHOTOELECTRIC LAYER WHEREBY THE PARTION OF

SAID PHOTOELECTRIC LAYER SUBJECTED TO SAID ELECTROPLATING PROCESS IS CONVERTED TO P-TYPE BY THE METAL IONS PROCEEDING TO THE ELECTRODE, FORMING THERBY A P-N JUNCTION THEREAROUND, AND A PHOTOVOLTAIC CELL THUS FORMED.

公开(公告)号：US4217166A

公开(公告)日：1980-08-12

申请号：US836344

申请日：1977-09-26

申请人： Reinhard Nink

发明人： Reinhard Nink

IPC分类号： C09K11/00 ,  C30B15/04 ,  C30B29/12 ,  G01T1/11 ,  B01J17/34

CPC分类号： G01T1/11

摘要： A lithium fluoride detector for thermoluminescence dosimetry is produced by pulling a doped lithium fluoride monocrystal from the melt. Lithium fluoride powder with titanium added to it is used as starting material and oxygen is incorporated into the lithium fluoride crystal lattice during or after production of the crystal. If titanium dioxide is added to the starting material, the oxygen may be incorporated during production of the crystal by eliminating the oxygen from the titanium dioxide.

摘要翻译： 通过从熔体中拉出掺杂的氟化锂单晶来制备用于热发光剂量测定法的氟化锂检测器。 将添加有钛的氟化锂粉末用作原料，在制造晶体期间或之后将氧结合到氟化锂晶格中。 如果将二氧化钛加入原料中，则可以通过从二氧化钛中除去氧而在制造晶体期间引入氧。