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13 条记录 (耗时 0.013 秒)

    Harvesting machine having an obstacle sensing device
    1.
    发明授权
    Harvesting machine having an obstacle sensing device 失效
    具有障碍物检测装置的收获机

    公开(公告)号：US06516595B2

    公开(公告)日：2003-02-11

    申请号：US09725545

    申请日：2000-11-29

    申请人： Karl-Thomas Rhody ,  Helmut Franke

    发明人： Karl-Thomas Rhody ,  Helmut Franke

    IPC分类号： A01D4114

    CPC分类号： A01D41/145 ,  A01B63/1145 ,  A01D41/141 ,  Y10S56/10

    摘要： A harvesting machine with a front-mounted harvesting attachment that is pivotable about a shaft running transversely to the direction of travel comprising and capable of lifting when an obstacle is detected that includes a sensing device with at least one double-acting hydraulic piston and cylinder unit, having a first cylinder chamber and a second cylinder chamber, arranged on the harvesting attachment, a control valve associated with the sensing device in such a way that when the sensing device is not operated, the first cylinder chamber is in fluid communication with the second cylinder chamber by a control valve and when the sensing device is operated, fluid communication between the first cylinder chamber and the second cylinder chamber is interrupted by the control valve.

    摘要翻译： 一种具有前置收集附件的收获机，其可绕横向于行进方向运动的轴线枢转，包括并且当检测到障碍物时能提升障碍物，该障碍物包括具有至少一个双作用液压活塞和气缸单元的传感装置 ，具有布置在所述收获附件上的第一气缸室和第二气缸室，与所述感测装置相关联的控制阀，使得当所述传感装置未被操作时，所述第一气缸室与所述第二气缸室流体连通 并且当感测装置操作时，第一气缸室和第二气缸室之间的流体连通被控制阀中断。

    Mechanical actuating device for a spot-type disc brake
    2.
    发明授权
    Mechanical actuating device for a spot-type disc brake 失效
    点式盘式制动器的机械驱动装置

    公开(公告)号：US4392557A

    公开(公告)日：1983-07-12

    申请号：US199907

    申请日：1980-10-23

    申请人： Helmut Franke

    发明人： Helmut Franke

    IPC分类号： B60T1/06 ,  F16D55/224 ,  F16D65/14 ,  F16D65/56 ,  F16D65/52 ,  F16D65/16

    CPC分类号： F16D65/18 ,  F16D65/567 ,  F16D2121/14 ,  F16D2125/40

    摘要： Mechanical actuating devices for disc brakes known in the art are of complicated construction and are composed of a large number of parts. The actuating device of the present invention reduces the number of parts by providing an actuating nut with an adjusting screw thread on its outer surface and by disposing the actuating nut in a threaded bore of an actuating or brake piston movably guided in a cylindrical bore of the brake caliper. The actuating nut and brake piston from an automatic brake clearance adjusting device in which the brake piston is progressively moved toward the brake disc on the actuating nut when the actuating stroke exceeds a predetermined amount due to wear of the brake pads.

    摘要翻译： 本领域已知的用于盘式制动器的机械致动装置具有复杂的结构，并且由大量部件组成。 本发明的致动装置通过在其外表面上提供具有调节螺纹的致动螺母来减少部件的数量，并且通过将致动螺母设置在活动或制动活塞的螺纹孔中，该致动或制动活塞可在 制动钳。 来自自动制动器间隙调节装置的致动螺母和制动器活塞，其中当致动行程由于制动衬块的磨损而超过预定量时，制动器活塞朝致动螺母上的制动盘逐渐移动。

    Method For Producing A Polished Semiconductor Wafer
    3.
    发明申请
    Method For Producing A Polished Semiconductor Wafer 有权
    抛光半导体晶片的制造方法

    公开(公告)号：US20110039411A1

    公开(公告)日：2011-02-17

    申请号：US12850019

    申请日：2010-08-04

    申请人： Bertram Moeckel ,  Helmut Franke

    发明人： Bertram Moeckel ,  Helmut Franke

    IPC分类号： H01L21/306 ,  H01L21/304

    CPC分类号： H01L21/02024 ,  H01L21/02021 ,  H01L21/6708

    摘要： A polished semiconductor wafer of high flatness is produced by the following ordered steps: slicing a semiconductor wafer from a rod composed of semiconductor material, material-removal processing of at least one side of the semiconductor wafer, and polishing of at least one side of the semiconductor wafer, wherein the semiconductor wafer has, after the material-removing processing and before the polishing on at least one side to be polished, along its margin, a ring-shaped local elevation having a maximum height of at least 0.1 μm, wherein the local elevation reaches its maximum height within a 10 mm wide ring lying at the edge of the semiconductor wafer.

    摘要翻译： 通过以下有序步骤制造高平坦度的抛光半导体晶片：从半导体材料的棒切割半导体晶片，半导体晶片的至少一侧的材料去除处理以及至少一面的抛光 半导体晶片，其中所述半导体晶片在材料去除处理之后并且在至少一个待抛光侧上的抛光之前沿其边缘具有最大高度为至少0.1μm的环形局部高度，其中， 局部高度在位于半导体晶片边缘的10mm宽的环内达到其最大高度。

    Process for producing a semiconductor wafer
    4.
    发明授权
    Process for producing a semiconductor wafer 有权
    半导体晶片的制造方法

    公开(公告)号：US06767841B2

    公开(公告)日：2004-07-27

    申请号：US09764634

    申请日：2001-01-18

    申请人： Günter Schwab ,  Helmut Franke ,  Manfred Schöfberger

    发明人： Günter Schwab ,  Helmut Franke ,  Manfred Schöfberger

    IPC分类号： H01L21302

    CPC分类号： H01L21/02019 ,  H01L21/30604 ,  H01L21/67075

    摘要： A process for producing a semiconductor wafer is based upon etching the semiconductor wafer with an etching medium flowing in a laminar flow along a direction of flow toward an edge of the semiconductor wafer. There is a protective shield arranged in front of the edge of the semiconductor wafer, so that the etching medium flows onto the protective shield and not onto the edge of the semiconductor wafer. There is also a process that has the semiconductor wafer being inclined with respect to the direction of flow of the etching medium, so that there is an angle of less than 180° between the direction of flow of the etching medium and a first side of the semiconductor wafer. Also, there is an angle of greater than 180° between the direction of flow of the etching medium and a second side of the semiconductor wafer, and the second side of the semiconductor wafer is subsequently polished.

    摘要翻译： 用于制造半导体晶片的方法是基于用沿着流向半导体晶片的边缘的流动方向以层流流动的蚀刻介质蚀刻半导体晶片。 存在布置在半导体晶片的边缘前方的保护屏蔽，使得蚀刻介质流到保护屏蔽上，而不流到半导体晶片的边缘。 还有一种方法，其中半导体晶片相对于蚀刻介质的流动方向倾斜，使得在蚀刻介质的流动方向和第一侧之间存在小于180°的角度 半导体晶片。 此外，在蚀刻介质的流动方向和半导体晶片的第二面之间存在大于180°的角度，随后抛光半导体晶片的第二侧。

    Enhanced protective lens cover for an infrared thermometer
    5.
    发明授权
    Enhanced protective lens cover for an infrared thermometer 失效
    红外线温度计增强保护镜头盖

    公开(公告)号：US6022140A

    公开(公告)日：2000-02-08

    申请号：US933240

    申请日：1997-09-19

    申请人： Jacob Fraden ,  Joseph P. Brown ,  Robert P. Lackey ,  Randall R. Howe ,  Heinz Bultges ,  Wolfram Debus ,  Gunther Bautz ,  Helmut Franke

    发明人： Jacob Fraden ,  Joseph P. Brown ,  Robert P. Lackey ,  Randall R. Howe ,  Heinz Bultges ,  Wolfram Debus ,  Gunther Bautz ,  Helmut Franke

    IPC分类号： G01J5/02 ,  G01K1/08

    CPC分类号： G01J5/02 ,  G01J5/021

    摘要： A disposable cover for an infrared thermometer provides IR window isolation of handling and usage generated forces. The cover comprises a thin sidewall linked to the film window with a collar structure. The collar structure includes one or more characteristics that either isolate the film window from externally applied forces, or develops counter forces in a way that precludes film stretching and other transmission distorting effects. In a preferred embodiment, the probe includes retention ears and the cover includes a rim that cooperatively engages the retention ears. This combination of retention ears and an interlocking rim decreases movement of the cover along the probe axis. The cover of the present invention permits sanitary application of an infrared clinical thermometer without hindering reading accuracy or patient comfort.

    摘要翻译： 用于红外线温度计的一次性盖子可提供IR窗口隔离处理和使用量产生的力。 盖子包括一个薄壁的侧壁，与薄膜窗口相连，带有一个领子结构。 套环结构包括一个或多个特性，其将薄膜窗口与外部施加的力隔离，或以防止膜拉伸和其它传递失真效应的方式产生反作用力。 在优选实施例中，探针包括保持耳，并且盖包括与保持耳协作地接合的边缘。 保持耳和互锁边缘的这种组合减小了盖沿探针轴线的运动。 本发明的盖子可以卫生地应用红外线体温计而不会妨碍读取精度或病人的舒适度。

    Method for producing a polished semiconductor wafer
    8.
    发明授权
    Method for producing a polished semiconductor wafer 有权
    抛光半导体晶片的制造方法

    公开(公告)号：US08409992B2

    公开(公告)日：2013-04-02

    申请号：US12850019

    申请日：2010-08-04

    申请人： Bertram Moeckel ,  Helmut Franke

    发明人： Bertram Moeckel ,  Helmut Franke

    IPC分类号： H01L21/306 ,  H01L21/304

    CPC分类号： H01L21/02024 ,  H01L21/02021 ,  H01L21/6708

    摘要： A polished semiconductor wafer of high flatness is produced by the following ordered steps: slicing a semiconductor wafer from a rod composed of semiconductor material, material-removal processing of at least one side of the semiconductor wafer, and polishing of at least one side of the semiconductor wafer, wherein the semiconductor wafer has, after the material-removing processing and before the polishing on at least one side to be polished, along its margin, a ring-shaped local elevation having a maximum height of at least 0.1 μm, wherein the local elevation reaches its maximum height within a 10 mm wide ring lying at the edge of the semiconductor wafer.

    摘要翻译： 通过以下有序步骤制造高平坦度的抛光半导体晶片：从半导体材料的棒切割半导体晶片，半导体晶片的至少一侧的材料去除处理以及至少一面的抛光 半导体晶片，其中所述半导体晶片在材料去除处理之后并且在至少一个待抛光侧上的抛光之前沿其边缘具有最大高度为至少0.1μm的环形局部高度，其中， 局部高度在位于半导体晶片边缘的10mm宽的环内达到其最大高度。

    Process and device for the wet-chemical treatment of silicon
    9.
    发明授权
    Process and device for the wet-chemical treatment of silicon 失效
    用于湿化学处理硅的工艺和装置

    公开(公告)号：US07083741B2

    公开(公告)日：2006-08-01

    申请号：US10686365

    申请日：2003-10-15

    申请人： Maximilian Stadler ,  Günter Schwab ,  Helmut Franke

    发明人： Maximilian Stadler ,  Günter Schwab ,  Helmut Franke

    IPC分类号： H01L21/00 ,  B44C1/22

    CPC分类号： C09K13/08 ,  H01L21/02019 ,  H01L21/30604 ,  H01L21/67086

    摘要： A device and process for the wet-chemical treatment of silicon using an etching liquid that contains water, nitric acid and hydrofluoric acid. The etching liquid is activated by introducing nitrogen oxide (NOx) into the etching liquid, before being used for the wet-chemical treatment of silicon. The device consists of a first vessel in which silicon is subjected to a wet-chemical treatment with the aid of an etching liquid, a second vessel in which fresh etching liquid is held ready, and a connecting line between the first vessel and the second vessel, through which nitrogen oxides (NOx) formed in the first vessel during the wet-chemical treatment are passed to the second vessel.

    摘要翻译： 使用含有水，硝酸和氢氟酸的蚀刻液对硅进行湿化学处理的装置和方法。 在用于硅的湿化学处理之前，通过将氮氧化物（NO x x S）引入蚀刻液中来激活蚀刻液。 该装置由第一容器和第二容器组成，第一容器借助于蚀刻液体对其进行湿化学处理;第二容器，其中新鲜蚀刻液体保持准备就绪;以及第一容器和第二容器之间的连接线 ，在湿化学处理期间，通过其将形成在第一容器中的氮氧化物（NO x SO 2）通过第二容器。