摘要:
A coating method for producing an electrically insulating coating on a bearing component, wherein, in a first step, a substance mixture comprising at least a) a silane and/or siloxane compound, b) a metal alcoholate, and c) PEEK and/or PTFE in the form of a dispersion is applied to the bearing component and, in a second step, is solidified on the component surface by means of a laser beam.
摘要:
A high repetition rate, compact, modular gas discharge, ultraviolet laser. The laser is useful as a light source for very rapid inspections of wafers in an integrated circuit fabrication process. It is also useful for reticle writing at very rapid rates. A preferred embodiment operates at pulse repetition rates of 1000 to 4000 Hz and is designed for round-the-clock production line operation. This preferred embodiment comprises a pulse control unit which controls the timing of pulses to an accuracy of less than 4 nanoseconds. Preferred embodiments of this gas discharge laser can be configured to operate with a KrF gas mixture, an ArF gas mixture or an F2 gas mixture, each with an approximate buffer gas, producing 248 nm, 197 nm or 157 nm ultraviolet light pulses.
摘要:
A coating method for producing an electrically insulating coating on a bearing component, wherein, in a first step, a substance mixture comprising at least a) a silane and/or siloxane compound, b) a metal alcoholate, and c) PEEK and/or PTFE in the form of a dispersion is applied to the bearing component and, in a second step, is solidified on the component surface by means of a laser beam.
摘要:
A high repetition rate, compact, modular gas discharge, ultraviolet laser. The laser is useful as a light source for very rapid inspections of wafers in an integrated circuit fabrication process. It is also useful for reticle writing at very rapid rates. A preferred embodiment operates at pulse repetition rates of 1000 to 4000 Hz and is designed for round-the-clock production line operation. This preferred embodiment comprises a pulse control unit which controls the timing of pulses to an accuracy of less than 4 nanoseconds. Preferred embodiments of this gas discharge laser can be configured to operate with a KrF gas mixture, an ArF gas mixture or an F2 gas mixture, each with an approximate buffer gas, producing 248 nm, 197 nm or 157 nm ultraviolet light pulses.