Method for removing photoresist
    2.
    发明授权
    Method for removing photoresist 失效
    去除光刻胶的方法

    公开(公告)号:US4966664A

    公开(公告)日:1990-10-30

    申请号:US335858

    申请日:1989-04-10

    IPC分类号: G03F7/42 C25F1/00 H01L21/311

    CPC分类号: H01L21/31133 C25F1/00

    摘要: A method for removing photoresists, particularly those stressed during etching is provided. Pursuant to the method, an electrolysis is performed in order to promote basic decoating bath, wherein the substrate carrying the stressed photoresist structure is wired as a cathode. Gases arising directly at the substrate surface or, respectively, at the exposed metallic surfaces, effect a complete decoating the photoresist structure that at the same time is dissolving in the basic bath.

    摘要翻译: 提供了一种去除光致抗蚀剂的方法,特别是在蚀刻过程中应力的方法。 根据该方法,进行电解以促进碱性脱色浴,其中携带受压光致抗蚀剂结构的基材作为阴极接线。 直接在基材表面或暴露的金属表面产生的气体完全脱漆光刻胶结构,同时溶解在碱性浴中。