公开(公告)号：US5891353A

公开(公告)日：1999-04-06

申请号：US915579

申请日：1997-08-21

申请人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

发明人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

IPC分类号： B24B37/00 ,  C09K3/14 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  B44C1/22

CPC分类号： H01L21/02024 ,  H01L21/30625 ,  Y10T428/21

摘要： A semiconductor wafer polishing agent contains mainly a silica containing polishing agent and is added with a polyolefin type fine particle material. The novel semiconductor wafer polishing agent is capable of low brightness polishing to the back face of the wafer, sensor detection of the front and back faces of the wafer, and suppression of dust to be generated by chipping of the back face of the wafer, thereby to increase the yield of semiconductor devices. A polishing method using the polishing agent and a novel semiconductor wafer having a back face with an unconventional surface shape are also disclosed.

公开(公告)号：US5866226A

公开(公告)日：1999-02-02

申请号：US670258

申请日：1996-06-20

申请人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

发明人： Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo ,  Teruaki Fukami

IPC分类号： B24B37/00 ,  C09K3/14 ,  H01L21/02 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  B32B3/02 ,  H01L29/00

CPC分类号： H01L21/02024 ,  H01L21/30625 ,  Y10T428/21

摘要： A semiconductor wafer polishing agent contains mainly a silica containing polishing agent and is added with a polyolefin type fine particle material. The novel semiconductor wafer polishing agent is capable of low brightness polishing to the back face of the wafer, sensor detection of the front and back faces of the wafer, and suppression of dust to be generated by chipping of the back face of the wafer, thereby to increase the yield of semiconductor devices. A polishing method using the polishing agent and a novel semiconductor wafer having a back face with an unconventional surface shape are also disclosed.

摘要翻译： 半导体晶片抛光剂主要含有含二氧化硅的抛光剂，并加入聚烯烃型细粒材料。 该新颖的半导体晶片抛光剂能够对晶片的背面进行低亮度抛光，对晶片的正面和背面进行传感器检测，并且抑制由于晶片背面的碎裂而产生的灰尘，由此 以提高半导体器件的产量。 还公开了使用抛光剂的抛光方法和具有非常规表面形状的背面的新型半导体晶片。

公开(公告)号：US5821167A

公开(公告)日：1998-10-13

申请号：US773379

申请日：1996-12-26

申请人： Teruaki Fukami ,  Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo

发明人： Teruaki Fukami ,  Hisashi Masumura ,  Kiyoshi Suzuki ,  Hideo Kudo

IPC分类号： B24B37/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02024

摘要： A method of manufacturing semiconductor mirror wafers includes a double side primary mirror polishing step, a back side low brightness polishing step and a front side final mirror polishing step, wherein a silica containing polishing agent is used together with a polyolefin type fine particle material for the back side low brightness polishing. The method is capable of low brightness polishing of the back side, sensor detection of the front and back sides, suppression of generation of fine dust or particles from back side, thereby to increase the yield of semiconductor devices, manufacturing mirror wafers with higher flatness level, and higher productivity due to simplification of processes.

摘要翻译： 制造半导体镜面晶片的方法包括双面主镜抛光步骤，背面低亮度抛光步骤和前侧最终镜面抛光步骤，其中将含二氧化硅的抛光剂与聚烯烃型细颗粒材料一起用于 背面低亮度抛光。 该方法能够对背面进行低亮度抛光，前后传感器检测，抑制从背面产生细小灰尘或微粒，从而提高半导体器件的产量，制造具有较高平坦度水平的镜面晶片 ，并且由于工艺的简化而提高了生产率。

公开(公告)号：US06120353A

公开(公告)日：2000-09-19

申请号：US248993

申请日：1999-02-12

申请人： Kiyoshi Suzuki ,  Hisashi Masumura ,  Teruaki Fukami

发明人： Kiyoshi Suzuki ,  Hisashi Masumura ,  Teruaki Fukami

IPC分类号： B24B37/24 ,  B24D11/00 ,  B24D13/12 ,  B24D13/14 ,  B24B1/00

CPC分类号： B24B37/24

摘要： In a polishing method for a semiconductor wafer in which polishing slurry is interposed between the semiconductor wafer and a polishing pad and the semiconductor wafer is mirror-polished by a polishing step for planarization, when polishing is conducted using a suede-like foam urethane resin polishing pad having physical properties of low compressibility lower than 9 % and high pore density equal to or higher than about 150 pores/cm.sup.2 as the polishing pad used in the polishing step, a mirror silicon wafer with good surface roughness of 50 bits in haze can be manufactured.

摘要翻译： 在将半导体晶片插入在半导体晶片和研磨垫之间的半导体晶片的研磨方法中，通过用于平坦化的研磨工序对半导体晶片进行镜面抛光，在使用麂皮状泡沫聚氨酯树脂研磨 作为抛光步骤中使用的抛光垫，其具有低压缩率低于9％和高孔密度等于或高于约150孔/ cm 2的物理性能的垫可以是具有50位雾度的良好表面粗糙度的镜面硅晶片 制造。

公开(公告)号：US06306021B1

公开(公告)日：2001-10-23

申请号：US09237881

申请日：1999-01-27

申请人： Hisashi Masumura ,  Makoto Kobayashi ,  Teruaki Fukami ,  Tsutomu Takaku ,  Mamoru Okada

发明人： Hisashi Masumura ,  Makoto Kobayashi ,  Teruaki Fukami ,  Tsutomu Takaku ,  Mamoru Okada

IPC分类号： B24B500

CPC分类号： B24B37/22 ,  B24B37/24

摘要： There is disclosed a polishing pad for mirror-polishing a semiconductor wafer, especially in a finish polishing process, by use of a polishing machine which includes a turn table on which a polishing pad is attached, a unit for feeding a polishing agent onto a surface of the polishing pad, and a mechanism for pressing a semiconductor wafer onto the surface of the polishing pad. The polishing pad includes a top layer formed of a porous soft material, a bottom layer formed of a rubber elastomer, and an intermediate layer formed of a hard plastic sheet. The hard plastic sheet is disposed between the top layer and the bottom layer and is bonded to the bottom layer. In the polishing pad, undulation produced in the bottom layer due to a horizontal force generated during polishing is prevented from being transferred to the top layer of the polishing pad, and unevenness in polishing stock removal stemming from warpage or undulation of a wafer itself can be mitigated.

摘要翻译： 公开了一种用于对半导体晶片进行镜面抛光的抛光垫，特别是在精抛光工艺中，通过使用抛光机，该抛光机包括其上安装有抛光垫的转台，用于将抛光剂供给到表面上的单元 的抛光垫，以及用于将半导体晶片压到抛光垫的表面上的机构。 抛光垫包括由多孔软质材料形成的顶层，由橡胶弹性体形成的底层和由硬塑料片形成的中间层。 硬塑料片设置在顶层和底层之间并结合到底层。 在抛光垫中，由于抛光期间产生的水平力，底层产生的波动被转移到抛光垫的顶层，并且由晶片本身的翘曲或起伏引起的抛光原料去除的不均匀性可以是 缓解

公开(公告)号：US6060396A

公开(公告)日：2000-05-09

申请号：US209483

申请日：1998-12-11

申请人： Teruaki Fukami ,  Tsutomu Takaku

发明人： Teruaki Fukami ,  Tsutomu Takaku

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/306 ,  H01L21/00

CPC分类号： C09G1/02 ,  H01L21/30625

摘要： A semiconductor silicon wafer polishing agent and a polishing method using the same are provided for avoiding the need for an increased purity of a polishing agent which may cause a prohibitively high cost, while still preventing semiconductor wafers from being contaminated by metals, particularly by copper and nickel, in a polishing process. The semiconductor silicon wafer polishing agent comprises a silica containing polishing agent as a main component, and Cu and Ni respectively in concentration of 0.01 to 1 ppb with respect to the total amount of the polishing agent.

摘要翻译： 提供了半导体硅晶片抛光剂和使用其的抛光方法，以避免需要增加抛光剂的纯度，这可能导致高昂的成本，同时仍然防止半导体晶片被金属，特别是铜和 镍，在抛光过程中。 半导体硅晶片抛光剂相对于研磨剂的总量，以含二氧化硅的抛光剂为主要成分，分别为0.01〜1ppb的Cu和Ni。

公开(公告)号：US5792258A

公开(公告)日：1998-08-11

申请号：US593698

申请日：1996-01-29

申请人： Masanori Kimura ,  Ken Yoshizawa ,  Teruaki Fukami ,  Hirotoshi Yamagishi

发明人： Masanori Kimura ,  Ken Yoshizawa ,  Teruaki Fukami ,  Hirotoshi Yamagishi

IPC分类号： C30B13/20 ,  C30B29/06 ,  H01L21/208 ,  H05B6/30 ,  H05B6/36

CPC分类号： H05B6/30 ,  C30B13/20 ,  H05B6/362 ,  Y10T117/1088

摘要： A high-frequency induction heater for use in the growth of a semiconductor single crystal by the FZ method, including a plurality of high-frequency induction heating coils disposed in concentric juxtaposed relation to each other and each having a pair of power supply terminals provided for supplying a high-frequency current to the associated heating coil, with the power supply terminals of one of the heating coils being disposed in a space defined between opposite ends of an adjacent heating coil disposed outside the one heating coil, wherein a pair of electrically conductive members is attached to the pair of power supply terminals, respectively, of at least an innermost one of the heating coils so as to cover a space defined between the power supply terminals of the innermost heating coil. With the induction heater thus constructed, the so-called "pulsation", i.e., microscopic resistivity fluctuations and the macroscopic resistivity distribution in the diametrical and growth directions can be improved at one time.

摘要翻译： 一种用于通过FZ方法生长半导体单晶的高频感应加热器，包括多个彼此并置设置的高频感应加热线圈，每个高频感应加热线圈具有一对电源端子， 向相关联的加热线圈提供高频电流，其中一个加热线圈的电源端子设置在限定在设置在一个加热线圈外侧的相邻加热线圈的相对端之间的空间中，其中一对导电 至少最内侧加热线圈中的一对电源端子分别连接在一起，以覆盖在最内侧的加热线圈的电源端子之间限定的空间。 利用如此构造的感应加热器，可以一次性地改善所谓的“脉动”，即直径和生长方向的微观电阻率波动和宏观电阻率分布。

公开(公告)号：US06884721B2

公开(公告)日：2005-04-26

申请号：US09218997

申请日：1998-12-22

申请人： Teruaki Fukami

发明人： Teruaki Fukami

IPC分类号： C30B33/00 ,  H01L21/306 ,  H01L21/30 ,  C23G1/24

CPC分类号： H01L21/02052 ,  C30B29/06 ,  C30B33/00

摘要： Storage water used for storage of a silicon wafer in water is disclosed. The storage water contains Cu at a concentration of 0.01 ppb or less. A method of storing a silicon wafer in water is also disclosed. In the method, water containing Cu at a concentration of 0.01 ppb or less is used. In another method, a wafer is stored in water or a chemical solution, to which a chelating agent is added. The storage water and the storage methods can prevent degradation of oxide dielectric breakdown voltage which would otherwise occur due to Cu contamination from the storage water.

摘要翻译： 公开了用于将硅晶片储存在水中的储存水。 储水中含有浓度为0.01ppb以下的Cu。 还公开了一种将硅晶片储存在水中的方法。 在该方法中，使用含有浓度为0.01ppb以下的Cu的水。 在另一种方法中，将晶片储存在添加了螯合剂的水或化学溶液中。 储存水和储存方法可以防止由于储存水中的铜污染而导致的氧化物介电击穿电压的降低。

公开(公告)号：US06582280B1

公开(公告)日：2003-06-24

申请号：US09555836

申请日：2000-06-06

申请人： Toshiaki Otaka ,  Teruaki Fukami

发明人： Toshiaki Otaka ,  Teruaki Fukami

IPC分类号： B24C1100

CPC分类号： H01L21/0201 ,  B24C11/00 ,  B24C11/005

摘要： A silicon wafer is sand blasted using a sand blasting abrasive material containing a chelating agent which is selected from the group consisting of, for example, the following compounds (1) to (4) and salts thereof: (1) Nitrilotriacetic acid (NTA) (2) Ethylenediaminetetraacetic acid (EDTA) (3) Diethylenediamine-N,N,N″,N″-pentaacetic acid (DTPA) (4) Cyclohexanediaminetetraacetic acid (CyDTA).

摘要翻译： 使用含有螯合剂的喷砂研磨材料对硅晶片进行喷砂处理，所述螯合剂选自例如以下化合物（1）至（4）及其盐：（1）亚硝酸三乙酸（NTA） （2）乙二胺四乙酸（EDTA）（3）二乙二胺-N，N，N“，N” - 五乙酸（DTPA）（4）环己烷二胺四乙酸（CyDTA）。