公开(公告)号：US4937649A

公开(公告)日：1990-06-26

申请号：US383292

申请日：1989-07-17

申请人： Hiroshi Shiba ,  Hiroaki Mikoshiba

发明人： Hiroshi Shiba ,  Hiroaki Mikoshiba

IPC分类号： H03K19/00 ,  H01L21/3205 ,  H01L21/822 ,  H01L23/52 ,  H01L23/522 ,  H01L27/02 ,  H01L27/04

CPC分类号： H01L27/0218 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5223 ,  H01L2924/0002

摘要： A semiconductor integrated circuit includes a semiconductor substrate, a plurality of logic gates formed in the semiconductor substrate, power source wiring and ground wiring formed on the semiconductor substrate to supply power source voltage to the logic gates and a capacitor formed on the semiconductor substrate and distributively connected between the power source wiring and the ground wirings.

摘要翻译： 半导体集成电路包括半导体衬底，形成在半导体衬底中的多个逻辑门，在半导体衬底上形成的电源布线和接地布线，以向逻辑门提供电源电压，并且分布地形成在电容器上的电容器 连接在电源线和接地线之间。

公开(公告)号：US4227203A

公开(公告)日：1980-10-07

申请号：US882766

申请日：1978-03-02

申请人： Hiroaki Mikoshiba

发明人： Hiroaki Mikoshiba

IPC分类号： H01L21/8226 ,  H01L21/225 ,  H01L27/02 ,  H01L27/082 ,  H01L29/04 ,  H01L29/861 ,  H03K19/091 ,  H01L27/04

CPC分类号： H01L21/2257 ,  H01L27/0233 ,  H01L29/04 ,  Y10S257/926

摘要： A semiconductor device includes a substrate of one conductivity type and a polycrystalline silicon layer of the opposite conductivity type formed on a major surface of the substrate. A p-n junction establishing an effective diode is formed on the polycrystalline silicon layer as a result of the introduction of the impurities of the one conductivity type from the substrate into the polycrystalline silicon layer.

摘要翻译： 半导体器件包括一个导电类型的衬底和形成在衬底的主表面上的相反导电类型的多晶硅层。 由于将一种导电类型的杂质从衬底引入多晶硅层，所以在多晶硅层上形成建立有效二极管的p-n结。

公开(公告)号：US06271817B1

公开(公告)日：2001-08-07

申请号：US09321759

申请日：1999-05-28

申请人： Yoichi Wakai ,  Kenji Niwa ,  Masanori Konishi ,  Yojiro Matsueda ,  Hiroaki Mikoshiba

发明人： Yoichi Wakai ,  Kenji Niwa ,  Masanori Konishi ,  Yojiro Matsueda ,  Hiroaki Mikoshiba

IPC分类号： G09G336

CPC分类号： G09G3/367 ,  G09G3/2011 ,  G09G3/3674 ,  G09G3/3685 ,  G09G2310/06 ,  G09G2310/061 ,  G09G2320/0204 ,  G09G2320/0257

摘要： The present invention relates to a method of driving an active-matrix type of liquid crystal display device that has a plurality of row electrodes to which a scanning signal is applied, a plurality of column electrodes to which a data signal is applied, and a plurality of picture elements (pixels) formed at a plurality of intersections between these row and column electrodes, each of these pixels comprising a liquid crystal layer and a two-terminal element having non-linear resistance characteristics connected in series therewith by means of applying a voltage of a difference signal between a scanning signal and a data signal to the pixels. A compensatory voltage is applied to each pixel immediately before a data write period during which the liquid crystal layer of the pixel is charged with a data charge voltage corresponding to a display gradation. This compensatory voltage is a voltage that charges the liquid crystal layer with a compensatory charge voltage of a polarity opposite to that of the data charge voltage. The relationship between the two voltages is such that when the magnitude of the data charge voltage is large, that of the compensatory charge voltage is small; when the magnitude of the data charge voltage is small, that of the compensatory charge voltage is large. This reduces the occurrence of afterimages that are caused by I-V characteristic shift in a non-linear two-terminal element.

摘要翻译： 本发明涉及一种驱动有源矩阵型液晶显示装置的方法，该液晶显示装置具有施加扫描信号的多个行电极，施加数据信号的多个列电极和多个 形成在这些列和列电极之间的多个交点处的像素（像素），这些像素中的每一个包括液晶层和具有与其串联连接的非线性电阻特性的两端元件，通过施加电压 扫描信号和与像素之间的数据信号之间的差信号。 在像素的液晶层以对应于显示灰度的数据充电电压充电的数据写入周期之前立即对每个像素施加补偿电压。 该补偿电压是以与数据充电电压相反的极性的补偿充电电压对液晶层进行充电的电压。 两电压之间的关系使得当数据充电电压的大小较大时，补偿充电电压的大小较小; 当数据充电电压的大小较小时，补偿充电电压的幅度较大。 这减少了由非线性两端元件中的I-V特性偏移引起的残影的发生。

公开(公告)号：US5499123A

公开(公告)日：1996-03-12

申请号：US141880

申请日：1993-10-27

申请人： Hiroaki Mikoshiba

发明人： Hiroaki Mikoshiba

IPC分类号： G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/36 ,  G02F1/1343 ,  G02F1/1345

CPC分类号： G02F1/136213 ,  G02F1/133512

摘要： In an active matrix liquid crystal display cell having a switching active element, first and second transparent electrodes between which liquid crystal is filled, and a shading layer for protecting the switching active element and enhancing a contrast of light, an insulating layer is interposed between the shading layer and the first transparent electrode with the shading layer partially laid under the first transparent electrode through the insulating layer.

摘要翻译： 在具有切换有源元件的有源矩阵液晶显示单元，填充有液晶的第一和第二透明电极以及用于保护开关有源元件并增强光的对比度的遮光层之间插入绝缘层 遮光层和第一透明电极，其中遮光层通过绝缘层部分地铺设在第一透明电极的下方。

公开(公告)号：US5168336A

公开(公告)日：1992-12-01

申请号：US722574

申请日：1991-06-27

申请人： Hiroaki Mikoshiba

发明人： Hiroaki Mikoshiba

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/94

CPC分类号： H01L29/945 ,  H01L27/10823 ,  H01L27/10829

摘要： A dynamic random access memory cell comprises a switching transistor and a storage capacitor formed in a relatively deep trench and having a capacitor electrode projecting over the major surface of the semiconductor substrate, wherein the switching transistor comprises a source/drain region formed along a wall portion defining the relatively deep trench, another source/drain region formed in the major surface portion, a channel region extending partially along a wall portion defining a relatively shallow trench and partially beneath the major surface so that a channel length is prolonged, thereby decreasing an occupation area without any punch-through phenomenon.

摘要翻译： 动态随机存取存储单元包括开关晶体管和形成在相对较深的沟槽中的存储电容器，并且具有在半导体衬底的主表面上突出的电容器电极，其中开关晶体管包括沿着壁部形成的源极/漏极区域 限定相对较深的沟槽，形成在主表面部分中的另一源极/漏极区域，部分地沿着限定相对较浅沟槽并且部分地在主表面下方的壁部分延伸的沟道区域，使得沟道长度延长，从而减少占据 区域没有任何穿孔现象。