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公开(公告)号：US20060115994A1
公开(公告)日：2006-06-01
申请号：US11331220
申请日：2006-01-13
Applicant: Hanae Shimokawa , Tasao Soga , Hiroaki Okudaira , Toshiharu Ishida , Tetsuya Nakatsuka , Yoshiharu Inaba , Asao Nishimura
Inventor： Hanae Shimokawa , Tasao Soga , Hiroaki Okudaira , Toshiharu Ishida , Tetsuya Nakatsuka , Yoshiharu Inaba , Asao Nishimura
IPC: H01L21/00
CPC classification number: H05K1/181 , B23K1/0016 , B23K35/004 , B23K35/007 , B23K35/262 , B23K2101/40 , H01L23/488 , H01L23/49811 , H01L23/532 , H01L24/29 , H01L2224/83101 , H01L2924/01322 , H01L2924/15747 , H05K3/3426 , H05K3/3463 , H05K2201/10909 , Y02P70/613 , Y10T29/49144 , Y10T29/49149 , Y10T29/49169 , Y10T428/12708 , Y10T428/12715 , H01L2924/00
Abstract: Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.
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2.发明授权
公开(公告)号：US4963974A
公开(公告)日：1990-10-16
申请号：US184061
申请日：1988-04-20
Applicant: Jiro Ushio , Osamu Miyazawa , Akira Tomizawa , Hitoshi Yokono , Naoya Kanda , Naoko Matsuura , Setsuo Ando , Hiroaki Okudaira
Inventor： Jiro Ushio , Osamu Miyazawa , Akira Tomizawa , Hitoshi Yokono , Naoya Kanda , Naoko Matsuura , Setsuo Ando , Hiroaki Okudaira
IPC: C23C18/44
CPC classification number: C23C18/44 , H01L2224/45015 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/73265 , H01L2924/01047 , H01L2924/10253 , Y10T428/12396 , Y10T428/12528 , Y10T428/12611 , Y10T428/12826 , Y10T428/1284 , Y10T428/12889
Abstract: The present invention relates to an electroless gold plating solution, a method of plating by using the same, and an electronic device plated with gold by using the same.According to the present electroless gold plating solution, the plating solution components contain no cyanide ions, the amount of a reducing agent used is small, and gold plating can be carried out without causing the gold plating on conducting paths having a fine interval between them to short-circuit the conducting paths.Therefore, according to the method of gold plating by using said electroless gold plating solution, a plating method that is safe in the plating work and in the treatment of its waste liquor can be accomplished. The method has a feature that the method can provide an electronic device on which parts can be mounted highly densely, and wherein the joint reliability to the parts is high.
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公开(公告)号：US4913769A
公开(公告)日：1990-04-03
申请号：US228297
申请日：1988-08-04
Applicant: Naoya Kanda , Takayoshi Sowa , Tetsuya Yamazaki , Hiroaki Okudaira
Inventor： Naoya Kanda , Takayoshi Sowa , Tetsuya Yamazaki , Hiroaki Okudaira
IPC: H01L39/24
CPC classification number: H01L39/2464 , Y10S505/816 , Y10S505/82
Abstract: The present invention relates to an element comprising a superconductive material or a wiring formation technique. In a thin film wiring board in which a superconductive material is used as a conductor, annealing should be conducted at a high temperature in an oxygen atmosphere after formation of a film in order to convert the conductor portion into a superconductive material, which makes it necessary to use an inorganic oxide as the insulating film. This brought about a problem that the etching of the second and subsequent insulation layers causes a damage to the wiring and insulation layer provided thereunder.In the present invention, an over-etching preventing layer is provided on a wiring layer provided under the second and subsequent insulation layers in order to solve the problem in question.The present invention brings about an effect of realizing the formation of a multi-layered wiring layer by making use of a superconductive material.
Abstract translation: 本发明涉及一种包括超导材料或布线形成技术的元件。 在其中使用超导材料作为导体的薄膜布线板中，在形成膜之后，应在氧气氛中在高温下进行退火，以便将导体部分转换为超导材料，这使得它成为必要 使用无机氧化物作为绝缘膜。 这导致了第二和随后的绝缘层的蚀刻对其上提供的布线和绝缘层造成损坏的问题。 在本发明中，为了解决上述问题，在设置在第二绝缘层及其后的绝缘层的布线层上设置防过蚀层。 本发明通过利用超导材料产生实现多层布线层的形成的效果。
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公开(公告)号：US06960396B2
公开(公告)日：2005-11-01
申请号：US10187897
申请日：2002-07-03
Applicant: Hanae Shimokawa , Tasao Soga , Hiroaki Okudaira , Toshiharu Ishida , Tetsuya Nakatsuka , Yoshiharu Inaba , Asao Nishimura
Inventor： Hanae Shimokawa , Tasao Soga , Hiroaki Okudaira , Toshiharu Ishida , Tetsuya Nakatsuka , Yoshiharu Inaba , Asao Nishimura
CPC classification number: H05K1/181 , B23K1/0016 , B23K35/004 , B23K35/007 , B23K35/262 , B23K2101/40 , H01L23/488 , H01L23/49811 , H01L23/532 , H01L24/29 , H01L2224/83101 , H01L2924/01322 , H01L2924/15747 , H05K3/3426 , H05K3/3463 , H05K2201/10909 , Y02P70/613 , Y10T29/49144 , Y10T29/49149 , Y10T29/49169 , Y10T428/12708 , Y10T428/12715 , H01L2924/00
Abstract: Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.
Abstract translation: 提供通过无铅焊料的接合结构和包含接合结构的电子制品。 粘合结构相对于时间的变化具有稳定的结合界面，足够的强度和耐发生晶须同时保持焊料的良好润湿性。 在接合结构中，通过Sn-Bi合金层将无铅Sn-Ag-Bi合金焊料施加到电极。 Sn-Bi合金优选含有1〜20重量％的Bi，以获得良好的焊料润湿性。 为了获得本发明中具有较高可靠性的理想的接合特性，在Sn-Bi合金层下方设置有铜层，从而获得足够的接合强度。
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5.发明授权
公开(公告)号：US5202151A
公开(公告)日：1993-04-13
申请号：US532656
申请日：1990-06-04
Applicant: Jiro Ushio , Osamu Miyazawa , Akira Tomizawa , Hitoshi Yokono , Naoya Kanda , Naoko Matsuura , Setsuo Ando , Hiroaki Okudaira
Inventor： Jiro Ushio , Osamu Miyazawa , Akira Tomizawa , Hitoshi Yokono , Naoya Kanda , Naoko Matsuura , Setsuo Ando , Hiroaki Okudaira
IPC: C23C18/44
CPC classification number: C23C18/44
Abstract: The present invention relates to an electroless gold plating solution, a method of plating by using the same, and an electronic device plated with gold by using the same.According to the present electroless gold plating solution, the plating solution components contain no cyanide ions, the amount of a reducing agent used is small, and gold plating can be carried out without causing the gold plating on conducting paths having a fine interval between them to short-circuit the conducting paths.Therefore, according to the method of gold plating by using said electroless gold plating solution, a plating method that is safe in the plating work and in the treatment of its waste liquor can be accomplished. The method has a feature that the method can provide an electronic device on which parts can be mounted highly densely, and wherein the joint reliability to the parts is high.
Abstract translation: 本发明涉及无电镀金液，使用该方法的电镀方法以及使用该方法镀金的电子器件。 根据本发明的无电解镀金液，电镀液成分不含氰化物离子，还原剂的使用量少，可以进行镀金而不会在其间具有微细间隔的导电路径上进行镀金， 短路导通路径。 因此，根据通过使用所述无电解镀金液的镀金方法，可以实现电镀工作中安全的镀液方法及其废液的处理。 该方法具有该方法能够提供高密度地安装部件的电子设备，并且其中对部件的连接可靠性高的特征。
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Patent Agency Ranking
公开(公告)号：US5198273A
公开(公告)日：1993-03-30
申请号：US580877
申请日：1990-09-11
Applicant: Setsuo Ando , Jiro Ushio , Takashi Inoue , Hiroaki Okudaira , Takeshi Shimazaki , Hitoshi Yokono
Inventor： Setsuo Ando , Jiro Ushio , Takashi Inoue , Hiroaki Okudaira , Takeshi Shimazaki , Hitoshi Yokono
IPC: C23C18/44
CPC classification number: C23C18/44
Abstract: The present invention provides an electroless gold plating solution comprising essentially gold ions, a complexing agent, and a reducing agent, characterized by further containing a reduction promoter which has a function of giving electrons to an oxidant, the oxidant being produced from oxidation of the reducing agent with the gold ions being reduced, to change the oxidant to the original reducing agent. The present invention also provides a process for conducting electroless gold plating by bringing a substrate into contact with the electroless gold plating solution. The plating solution is excellent in the stability for gold plating of high deposition rate. Thus the present invention allows the electroless gold plating to be performed stably at a higher deposition rate.
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7.发明授权公开(公告)号：US07013564B2
公开(公告)日：2006-03-21
申请号：US09971566
申请日：2001-10-09
Applicant: Hanae Shimokawa , Tasao Soga , Hiroaki Okudaira , Toshiharu Ishida , Tetsuya Nakatsuka , Yoshiharu Inaba , Asao Nishimura
Inventor： Hanae Shimokawa , Tasao Soga , Hiroaki Okudaira , Toshiharu Ishida , Tetsuya Nakatsuka , Yoshiharu Inaba , Asao Nishimura
CPC classification number: H05K1/181 , B23K1/0016 , B23K35/004 , B23K35/007 , B23K35/262 , B23K2101/40 , H01L23/488 , H01L23/49811 , H01L23/532 , H01L24/29 , H01L2224/83101 , H01L2924/01322 , H01L2924/15747 , H05K3/3426 , H05K3/3463 , H05K2201/10909 , Y02P70/613 , Y10T29/49144 , Y10T29/49149 , Y10T29/49169 , Y10T428/12708 , Y10T428/12715 , H01L2924/00
Abstract: A method of producing an electronic device by connecting a lead of a semiconductor device with an electrode of a circuit board to form a bonded structure. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.
Abstract translation: 一种通过将半导体器件的引线与电路板的电极连接以形成接合结构来制造电子器件的方法。 在接合结构中，通过Sn-Bi合金层将无铅Sn-Ag-Bi合金焊料施加到电极。 Sn-Bi合金优选含有1〜20重量％的Bi，以获得良好的焊料润湿性。 为了获得本发明中具有较高可靠性的理想的接合特性，在Sn-Bi合金层下方设置有铜层，从而获得足够的接合强度。
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公开(公告)号：US5510976A
公开(公告)日：1996-04-23
申请号：US194378
申请日：1994-02-08
Applicant: Naoki Tanaka , Hiroshi Okamoto , Masayoshi Naito , Shin-ichiro Umemura , Yasuo Morooka , Masahiro Kayama , Hiroaki Okudaira
Inventor： Naoki Tanaka , Hiroshi Okamoto , Masayoshi Naito , Shin-ichiro Umemura , Yasuo Morooka , Masahiro Kayama , Hiroaki Okudaira
CPC classification number: G05B5/01 , Y10S706/903
Abstract: A control system is for accelerating stabilization of a chaotic state of a controlled system into a desired periodic state. In the control system, the SOGY algorithm is extended to permit selection of a region on a chaotic attractor as a target, so that the SOGY algorithm can be successfully combined with the OGY algorithm for the purpose of stabilization of the controlled system in the periodic state. Also, the method of nonlinear prediction is introduced so as to secure the effectiveness of the SOGY algorithm. Further, an uncertainty of prediction is taken into consideration so as to eliminate unnecessary control and to improve the effectiveness of the SOGY algorithm.
Abstract translation: 控制系统用于加速将受控系统的混沌状态稳定到期望的周期状态。 在控制系统中，扩展SOGY算法以允许选择混沌吸引子上的一个区域作为目标，从而SOGY算法可以与OGY算法成功合并，以便在周期状态下稳定受控系统 。 此外，引入了非线性预测的方法，以确保SOGY算法的有效性。 此外，考虑到预测的不确定性，以消除不必要的控制并提高SOGY算法的有效性。
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9.发明授权Magnetic recording medium having an amorphous, nonmagnetic nickel-tungston-phosphorus underlayer 失效磁记录介质具有无定形，非磁性的镍 - 钨 - 磷底层
公开(公告)号：US4735853A
公开(公告)日：1988-04-05
申请号：US863503
申请日：1986-05-15
Applicant: Hiroaki Okudaira , Hitoshi Oka , Masako Fujisawa , Yoshio Gobara , Nobuo Nakagawa
Inventor： Hiroaki Okudaira , Hitoshi Oka , Masako Fujisawa , Yoshio Gobara , Nobuo Nakagawa
CPC classification number: G11B5/7325 , Y10S428/90 , Y10T428/265 , Y10T428/31678
Abstract: Disclosed is a magnetic recording medium in which an underlayer formed below a magnetic medium, in which a signal is written, is composed of a nickel alloy comprising 0.05 to 10 atom % of tungsten and 14 to 30 atom % of phosphorus. In this magnetic recording medium, the temperature for formation of magnetic medium and the temperature for formation of a protective film can be elevated over the levels adopted in the conventional techniques. Therefore, the magnetic characteristics and abrasion resistance can be improved. Furthermore, the magnetic recording medium is excellent in the mechanical strength and corrosion resistance. Accordingly, the reliability of the magnetic medium can be highly improved.
Abstract translation: 公开了一种磁记录介质，其中形成在其上写有信号的磁介质下方的底层由包含0.05至10原子％的钨和14至30原子％的磷的镍合金组成。 在这种磁记录介质中，用于形成磁介质的温度和用于形成保护膜的温度可以提高到常规技术中采用的水平。 因此，可以提高磁特性和耐磨性。 此外，磁记录介质的机械强度和耐腐蚀性优异。 因此，可以大大提高磁性介质的可靠性。
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公开(公告)号：US08503189B2
公开(公告)日：2013-08-06
申请号：US12773128
申请日：2010-05-04
Applicant: Hanae Shimokawa , Tasao Soga , Hiroaki Okudaira , Toshiharu Ishida , Tetsuya Nakatsuka , Yoshiharu Inaba , Asao Nishimura
Inventor： Hanae Shimokawa , Tasao Soga , Hiroaki Okudaira , Toshiharu Ishida , Tetsuya Nakatsuka , Yoshiharu Inaba , Asao Nishimura
CPC classification number: H05K1/181 , B23K1/0016 , B23K35/004 , B23K35/007 , B23K35/262 , B23K2101/40 , H01L23/488 , H01L23/49811 , H01L23/532 , H01L24/29 , H01L2224/83101 , H01L2924/01322 , H01L2924/15747 , H05K3/3426 , H05K3/3463 , H05K2201/10909 , Y02P70/613 , Y10T29/49144 , Y10T29/49149 , Y10T29/49169 , Y10T428/12708 , Y10T428/12715 , H01L2924/00
Abstract: Provided are a bonded structure by a lead-free solder and an electronic article comprising the bonded structure. The bonded structure has a stable bonding interface with respect to a change in process of time, an enough strength and resistance to occurrence of whiskers while keeping good wettability of the solder. In the bonded structure, a lead-free Sn—Ag—Bi alloy solder is applied to an electrode through an Sn—Bi alloy layer. The Sn—Bi alloy, preferably, comprises 1 to 20 wt % Bi in order to obtain good wettability of the solder. In order to obtain desirable bonding characteristics having higher reliability in the invention, a copper layer is provided under the Sn—Bi alloy layer thereby obtaining an enough bonding strength.
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