摘要:
A data holding device includes a loop structure unit configured to hold data using a plurality of logic gates connected in a loop shape, a nonvolatile storage unit including a plurality of ferroelectric elements, the nonvolatile storage unit configured to store the data held in the loop structure unit in a nonvolatile manner using hysteresis characteristics of the ferroelectric elements, and a circuit separation unit configured to electrically separate the loop structure unit and the nonvolatile storage unit. The ferroelectric elements of the nonvolatile storage unit are surrounded by a dummy element smaller in width than the ferroelectric elements.
摘要:
A control circuit 10 includes an internal clock generating portion (12), which starts generating an internal clock signal (LCLK) required by a control portion (11) to perform action when a specific signal pattern appears in a trigger signal, continually generates the internal clock signal (LCLK) at least before the control portion (11) completes predetermined processing, and then stops generating the internal clock signal (LCLK); and the control portion (11), which uses the internal clock signal (LCLK) to perform the predetermined processing.
摘要:
The electronic device according to the present invention comprises a power supply; a processing section which has a nonvolatile register and performs predetermined processing by inputting and outputting data to and from the nonvolatile register on the basis of power fed from the power supply; an external signal inputting section for inputting an external signal to the processing section; and a power feed control section, which interrupts power feeding from the power supply to the processing section, while maintaining responsiveness to the external signal in a state in which the processing state of the processing section is stored in the nonvolatile register, and resumes power feeding from the power supply to the processing section in response to the external signal.
摘要:
A data processing apparatus has a data saving control portion. At shutdown, within the period after a fall in the source voltage is detected until the source voltage falls down to the lower limit at which the apparatus is guaranteed to operate, the data saving control portion saves to a non-volatile memory all the data needed to restore the state of an electronic circuit portion.
摘要:
A data holding device comprises a loop structure part (LOOP) that holds data by use of logic gates connected in a loop (e.g., inverters INV3 and INV4 of FIG. 1); a nonvolatile storage part (CL1a, CL1b, CL2a, CL2b, Q1a, Q1b, Q2a and Q2b) that utilizes the hysteresis characteristic of a ferroelectric element to store, in a nonvolatile manner, the data held in the loop structure part (LOOP); and a circuit isolating part (MUX1, MUX2, INV6, INV7, SW3 and SW4) that electrically isolates the loop structure part (LOOP) from the nonvolatile storage part.
摘要:
Provided is a nonvolatile storage gate embedded logic circuit embedding a nonvolatile storage gate which can hold data after power supply cutoff and can cut off a power supply at the same time shifting into a standby state. The nonvolatile storage gate embedded logic circuit includes a logic calculation unit having a logic gate, and a nonvolatile storage gate having a nonvolatile storage element, a data interface control unit disposed so as to be adjoining to the nonvolatile storage element, and receiving a nonvolatile storage control signal for data read-out from the nonvolatile storage element and data write-in to the nonvolatile storage element, and a volatile storage element disposed so as to be adjoining to the nonvolatile storage element, receiving a data input signal and a clock signal, and outputting a data output signal.
摘要:
A ferroelectric memory device includes: a plurality of memory banks configured to include a memory cell array composed of a ferroelectric memory; a cache bank configured to be bus-connected with the memory banks, and for copying data stored in the memory banks; and a memory bank/cache control sequencer for accessing and refreshing to the memory banks and the cache bank, wherein a random access control to the ferroelectric memory is possible during each memory cycle without delay of refresh operation.
摘要:
When data that has been saved outside a circuit is restored, a data control circuit, before resuming the processing that an electronic circuit had been performing before the data was saved, performs particular processing different from that processing. Moreover, the data control circuit has a data saving control function whereby it, via a debugging port (or a general-purpose data input/output port) of a volatile memory storing data to be processed by the electronic circuit, saves that data (or sends an instruction to save that data).
摘要:
A computation processing device executes logic computation based upon input data X(t) and data X(t−1) stored in memory. A ferroelectric capacitor includes a first terminal and a second terminal, and provides a function as memory. A bit line driver switches the voltage to be applied to the first terminal or the second terminal of the ferroelectric capacitor. A sense amplifier outputs a computation result according to the voltage that occurs at either of the first terminal and the second terminal of the ferroelectric capacitor. For example, the bit line driver switches the direction of the voltage to be applied to the ferroelectric capacitor according to the input data X(t).
摘要:
A control circuit 10 includes an internal clock generating portion (12), which starts generating an internal clock signal (LCLK) required by a control portion (11) to perform action when a specific signal pattern appears in a trigger signal, continually generates the internal clock signal (LCLK) at least before the control portion (11) completes predetermined processing, and then stops generating the internal clock signal (LCLK); and the control portion (11), which uses the internal clock signal (LCLK) to perform the predetermined processing.