公开(公告)号：US09185092B2

公开(公告)日：2015-11-10

申请号：US13634054

申请日：2011-03-11

Applicant: Akira Nishihata ,  Hiroshi Tanabe

Inventor： Akira Nishihata ,  Hiroshi Tanabe

IPC: G06F15/16 ,  H04L29/06 ,  H04L29/08

CPC classification number: H04L63/08 ,  H04L63/0272 ,  H04L67/104

Abstract: In a confidential-communication system that uses a first-communication network that is Internet capable of confidential communication using VPN, and a second communication network that is an audio-circuit network, a method is implemented wherein a send/receive-processing portion 5 of a communication control device 3 completes authentication between users by implementing a P2P connection between each communication control device 3 by referencing specific information that specifies another party of a P2P connection in a memory portion 4 on the communication device 3 before confidential communication starts using VPN; a confidential-communication preparation portion 70 of the communication control device 3 exchanges via the second communication network VPN joint information required to establish a VPN link with the first communication network; and a switching portion 71 of the communication control device 3 starts confidential communication using VPN over a first-communication network.

Abstract translation: 在使用能够使用VPN进行机密通信的互联网的第一通信网络和作为音频电路网络的第二通信网络的机密通信系统中，实现了一种方法，其中，发送/接收处理部分5的发送/接收处理部分5 通信控制装置3通过在使用VPN进行机密通信开始之前，通过在通信装置3的存储器部分4中引用指定P2P连接的另一方的特定信息来实现各通信控制装置3之间的P2P连接来完成用户之间的认证; 通信控制装置3的机密通信准备部70经由与第一通信网络建立VPN链路所需的第二通信网络VPN联合信息进行交换; 并且通信控制装置3的切换部分71通过第一通信网络开始使用VPN的机密通信。

公开(公告)号：US08743317B2

公开(公告)日：2014-06-03

申请号：US12903364

申请日：2010-10-13

Applicant: Kunihiro Shiota ,  Koji Mimura ,  Hiroshi Tanabe ,  Koji Shigemura

Inventor： Kunihiro Shiota ,  Koji Mimura ,  Hiroshi Tanabe ,  Koji Shigemura

IPC: G02F1/1335 ,  G02F1/1333

CPC classification number: G02F1/133524 ,  G02F1/13476 ,  G02F1/135

Abstract: An image forming apparatus includes: a functional element substrate to which a pixel is formed in a predetermined cycle; an opposed substrate formed on the functional element substrate; and an optical device arranged on the opposed substrate, which includes a transparent layer and an optical absorption layer arranged in a cycle of 1/n (n is an integer number) of the cycle of arranging the pixel, and restricts spread of transmitted light.

Abstract translation: 图像形成装置包括：以预定周期形成像素的功能元件基板; 形成在所述功能元件基板上的相对基板; 以及布置在相对基板上的光学器件，其包括以安排像素的周期的1 / n（n为整数）的周期布置的透明层和光吸收层，并且限制透射光的扩展。

公开(公告)号：US08723240B2

公开(公告)日：2014-05-13

申请号：US12923281

申请日：2010-09-13

Applicant: Hiroshi Tanabe

Inventor： Hiroshi Tanabe

IPC: H01L29/76 ,  H01L27/115

CPC classification number: H01L29/66742 ,  H01L27/11502 ,  H01L27/11507 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/13 ,  H01L28/55 ,  H01L29/6684

Abstract: A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode.

Abstract translation: 一种半导体器件的制造方法，所述方法包括通过在绝缘基板上形成多晶硅薄膜来形成薄膜晶体管，通过栅极绝缘膜形成栅极电极，并通过离子注入形成源极/漏极区域和沟道区域 在通过使用栅电极作为掩模的多晶硅薄膜中，在覆盖该薄膜晶体管的层间电介质膜上形成互连层，并通过层间绝缘膜形成与薄膜晶体管连接的第一接触，形成硅 在层间电介质膜上形成氢化氮化物膜，以覆盖互连层，在该硅氢化硅膜上形成下电极，并形成通过硅氢化硅膜与互连层连接的第二接触，并在下层形成铁电层 电极。

公开(公告)号：US08582202B2

公开(公告)日：2013-11-12

申请号：US12665588

申请日：2008-06-13

Applicant: Hirotoshi Terada ,  Hiroshi Tanabe

Inventor： Hirotoshi Terada ,  Hiroshi Tanabe

IPC: G02B21/00

CPC classification number: G02B21/0016 ,  G01N21/9501 ,  G02B7/022 ,  G02B21/248 ,  G02B21/33

Abstract: When it is detected that a solid immersion lens comes into contact with the semiconductor device, the lens is caused to vibrate by a vibration generator unit. Next, a reflected light image from the lens is input to calculate a reflected light quantity of the reflected light image, and it is judged whether a ratio of the reflected light quantity to an incident light quantity is not greater than a threshold value. When the ratio is greater than the threshold value, it is judged that optical close contact between the lens and the semiconductor device is not achieved, and the lens is again caused to vibrate. When the ratio is not greater than the threshold value, it is judged that optical close contact between the lens and the semiconductor device is achieved, and an observed image of the semiconductor device is acquired.

Abstract translation: 当检测到固体浸没透镜与半导体器件接触时，透镜被振动发生器单元振动。 接下来，输入来自透镜的反射光图像以计算反射光图像的反射光量，并且判断反射光量与入射光量的比率是否不大于阈值。 当比率大于阈值时，判断透镜和半导体器件之间的光学紧密接触没有实现，并且再次使透镜振动。 当比率不大于阈值时，判断透镜和半导体器件之间的光学紧密接触是实现的，并且获得了半导体器件的观察图像。

公开(公告)号：US08488087B2

公开(公告)日：2013-07-16

申请号：US12237332

申请日：2008-09-24

Applicant: Kenichi Mori ,  Michiaki Sakamoto ,  Ken Sumiyoshi ,  Hiroshi Nagai ,  Kenichirou Naka ,  Masayuki Jumonji ,  Hiroshi Tanabe

Inventor： Kenichi Mori ,  Michiaki Sakamoto ,  Ken Sumiyoshi ,  Hiroshi Nagai ,  Kenichirou Naka ,  Masayuki Jumonji ,  Hiroshi Tanabe

IPC: G02F1/1343

CPC classification number: G02F1/133555

Abstract: To suppress light leakage at the time of dark state, and to provide a liquid crystal display device whose electrodes in the reflection areas can be formed with high precision. The liquid crystal display device has a reflection area within a pixel unit by corresponding at least to a reflection plate forming part, and the reflection area is driven with a lateral electric field mode and normally-white. A driving electrode for forming an electric field to a liquid crystal layer of the reflection area is formed on the reflection plate via an insulating film by using a non-transparent electric conductor.

公开(公告)号：US20130074176A1

公开(公告)日：2013-03-21

申请号：US13634054

申请日：2011-03-11

Applicant: Akira Nishihata ,  Hiroshi Tanabe

Inventor： Akira Nishihata ,  Hiroshi Tanabe

IPC: H04L29/06

CPC classification number: H04L63/08 ,  H04L63/0272 ,  H04L67/104

Abstract: In a confidential-communication system that uses a first-communication network that is Internet capable of confidential communication using VPN, and a second communication network that is an audio-circuit network, a method is implemented wherein a send/receive-processing portion 5 of a communication control device 3 completes authentication between users by implementing a P2P connection between each communication control device 3 by referencing specific information that specifies another party of a P2P connection in a memory portion 4 on the communication device 3 before confidential communication starts using VPN; a confidential-communication preparation portion 70 of the communication control device 3 exchanges via the second communication network VPN joint information required to establish a VPN link with the first communication network; and a switching portion 71 of the communication control device 3 starts confidential communication using VPN over a first-communication network.

Abstract translation: 在使用能够使用VPN进行机密通信的互联网的第一通信网络和作为音频电路网络的第二通信网络的机密通信系统中，实现了一种方法，其中，发送/接收处理部分5的发送/接收处理部分5 通信控制装置3通过在使用VPN进行机密通信开始之前，通过在通信装置3的存储器部分4中引用指定P2P连接的另一方的特定信息来实现各通信控制装置3之间的P2P连接来完成用户之间的认证; 通信控制装置3的机密通信准备部70经由与第一通信网络建立VPN链路所需的第二通信网络VPN联合信息进行交换; 并且通信控制装置3的切换部分71通过第一通信网络开始使用VPN的机密通信。

公开(公告)号：US08389345B2

公开(公告)日：2013-03-05

申请号：US12954794

申请日：2010-11-26

Applicant: Hiroshi Tanabe

Inventor： Hiroshi Tanabe

IPC: H01L21/205

CPC classification number: H01L29/78633 ,  H01L29/66757

Abstract: To achieve TFT having a high light-resistance characteristic with a suppressed light leak current at low cost by simplifying the manufacturing processes. The TFT basically includes: a light-shielding film formed on a glass substrate that serves as an insulating substrate; an insulating film formed on the light-shielding film; a semiconductor film formed on the insulating film; and a gate insulating film formed on the semiconductor film. Each layer of a laminate that is configured with three layers of the light-shielding film, the insulating film, and the semiconductor film is patterned simultaneously. Further, each layer of the laminate is configured with silicon or a material containing silicon.

Abstract translation: 通过简化制造工艺，以低成本实现具有抑制的漏光电流的具有高耐光特性的TFT。 TFT基本上包括：形成在用作绝缘基板的玻璃基板上的遮光膜; 形成在所述遮光膜上的绝缘膜; 形成在绝缘膜上的半导体膜; 以及形成在半导体膜上的栅极绝缘膜。 层叠有由三层遮光膜，绝缘膜和半导体膜构成的层叠体的各层被图案化。 此外，层叠体的各层由硅或含硅的材料构成。

公开(公告)号：US20120137693A1

公开(公告)日：2012-06-07

申请号：US13163942

申请日：2011-06-20

Applicant: Hiroshi Tanabe ,  Eiki Anzawa

Inventor： Hiroshi Tanabe ,  Eiki Anzawa

IPC: F02C7/224 ,  F02C3/20

CPC classification number: F02C3/20 ,  F02C7/22 ,  F02C7/224 ,  F05D2220/75 ,  F05D2260/15

Abstract: Provided is a power plant including a gas turbine that uses a fuel gas as a fuel; a fuel gas cooler that cools the fuel gas, which is to be pressurized in a fuel gas compressor and re-circulated, using cooling water; and a dust collection device that separates/removes impurities from the fuel gas that is to be guided to the fuel gas compressor; wherein the power plant further includes heating means that heats the fuel gas that is to be guided to the dust collection device using the fuel gas that has been used to generate an anti-thrust force acting on a rotor of the fuel gas compressor.

Abstract translation: 提供了一种发电厂，其包括使用燃料气体作为燃料的燃气轮机; 燃料气体冷却器，其使用冷却水冷却在燃料气体压缩机中被加压并再循环的燃料气体; 以及从要被引导到燃料气体压缩机的燃料气体分离/去除杂质的集尘装置; 其特征在于，所述动力装置还包括加热装置，其利用已经用于产生作用在所述燃料气体压缩机的转子上的抗推力的燃料气加热要被引导到所述集尘装置的燃料气体。

公开(公告)号：US20120028797A1

公开(公告)日：2012-02-02

申请号：US13147479

申请日：2010-01-12

Applicant: Hiroshi Kodama ,  Kimiyoshi Nishizawa ,  Hiroshi Tanabe ,  Akio Sano ,  Misao Oinuma

Inventor： Hiroshi Kodama ,  Kimiyoshi Nishizawa ,  Hiroshi Tanabe ,  Akio Sano ,  Misao Oinuma

IPC: B01J32/00

CPC classification number: B21D53/84 ,  B01J35/04 ,  B01J37/0225 ,  B21D5/10 ,  F01N3/2821 ,  F01N2330/04

Abstract: A metal catalyst substrate 1 is equipped with a honeycomb body 2 in which a corrugated metal foil 4 and a flat metal foil 5 are multiply rolled, their leader portions being overlapped with each other. A restricting portion 8 is formed at a core portion 7 of the honeycomb body 2 by a portion of the core portion being deformed to restrict flow of exhaust gas in a core portion 7.

Abstract translation: 金属催化剂基板1具有波纹状金属箔4和扁平金属箔5多层轧制的蜂窝体2，其前端部彼此重叠。 在芯部的一部分变形的情况下，在蜂窝体2的芯部7形成限制部8，从而限制芯部7内的废气流。

公开(公告)号：US07981811B2

公开(公告)日：2011-07-19

申请号：US12508888

申请日：2009-07-24

Applicant: Shigeru Mori ,  Takahiro Korenari ,  Tadahiro Matsuzaki ,  Hiroshi Tanabe

Inventor： Shigeru Mori ,  Takahiro Korenari ,  Tadahiro Matsuzaki ,  Hiroshi Tanabe

IPC: H01L21/31

CPC classification number: H01L29/78621 ,  H01L29/66757

Abstract: A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.

Abstract translation: 在绝缘基板上形成基底层，以局部方式形成半导体层。 然后形成栅极绝缘膜以覆盖半导体层，并且栅极电极形成在栅极绝缘膜的一部分上。 然后通过栅极绝缘膜将杂质注入到半导体层中，形成源极区，漏极区和LDD区。 用稀氢氟酸蚀刻栅极绝缘膜。 然后形成电极保护绝缘膜以覆盖栅电极，并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。 因此，引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。