公开(公告)号：US07614128B2

公开(公告)日：2009-11-10

申请号：US11480474

申请日：2006-07-05

申请人： Hiroyuki Kamei

发明人： Hiroyuki Kamei

IPC分类号： H01L41/22 ,  B41J2/045

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1646 ,  B41J2002/14241 ,  B41J2002/14419 ,  B41J2002/14491 ,  B41J2202/03 ,  H01L41/1876 ,  H01L41/317 ,  H01L41/319 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49147 ,  Y10T29/49401

摘要： While a piezoelectric element is being formed by sequentially laminating a lower electrode whose uppermost layer is made of iridium, a titanium layer, a piezoelectric layer and an upper electrode to each other on a substrate, the piezoelectric layer is formed, by an MOD method, on the titanium layer with an contact angle of water to the surface thereof which is no less than 40°.

摘要翻译： 虽然通过在衬底上顺序地层叠最上层由铱，钛层，压电层和上电极构成的下电极来形成压电元件，但通过MOD法形成压电层， 在钛层上，其表面与水的接触角不小于40°。

公开(公告)号：US20090009563A1

公开(公告)日：2009-01-08

申请号：US12165591

申请日：2008-06-30

申请人： Hiroyuki KAMEI

发明人： Hiroyuki KAMEI

IPC分类号： B41J2/045

CPC分类号： C23C18/1216 ,  B41J2/14233 ,  B41J2002/14241 ,  B41J2002/14419 ,  B41J2202/03 ,  C23C18/12 ,  C23C18/1254 ,  C23C18/1266 ,  H01L41/1876 ,  H01L41/318

摘要： A composition for ferroelectric thin film formation, comprising at least a colloidal solution containing metals serving as materials constituting a ferroelectric thin film, the colloidal solution having an average colloidal particle diameter of 1 to 100 nm, and obtaining a particle size distribution having two or more peaks; a ferroelectric thin film formed from the composition for ferroelectric thin film formation, and a liquid-jet head equipped with a piezoelectric element having the ferroelectric thin film.

摘要翻译： 一种铁电薄膜形成用组合物，至少包含含有构成铁电薄膜的材料的胶体溶液，所述胶体溶液的平均胶体粒径为1〜100nm，得到具有2个以上的粒径分布的粒径分布 山峰 由用于铁电薄膜形成的组合物形成的铁电薄膜，以及配备有具有铁电薄膜的压电元件的液体喷射头。

公开(公告)号：US20080252697A1

公开(公告)日：2008-10-16

申请号：US11858969

申请日：2007-09-21

申请人： Hiroyuki KAMEI

发明人： Hiroyuki KAMEI

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  B41J2/055 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1646 ,  B41J2002/14241 ,  B41J2002/14419 ,  B41J2202/03

摘要： An actuator device includes a piezoelectric element configured to include a lower electrode provided on a surface side of a substrate, a piezoelectric layer provided on the lower electrode, and an upper electrode provided on the piezoelectric layer. The lower electrode contains a precious metal. When a cross-section of the lower electrode is examined in the thickness direction using secondary ion mass spectroscopy (SIMS) , a ratio Z1 /Z2 between the intensity Z1 of oxygen ions and the intensity Z2 of ions of a precious metal detected at the surface of the lower electrode facing the substrate is 0.2 or more.

摘要翻译： 致动器装置包括压电元件，其被构造为包括设置在基板的表面侧的下电极，设置在下电极上的压电层和设置在压电层上的上电极。 下电极含有贵金属。 当使用二次离子质谱法（SIMS）在厚度方向上检查下部电极的横截面时，强度Z'之间的比Z Z 1 / Z 2 2 < 氧离子的SUB> 1和在面向衬底的下电极的表面处检测到的贵金属的离子的强度Z 2 O 2为0.2以上。

公开(公告)号：US07337261B2

公开(公告)日：2008-02-26

申请号：US11402908

申请日：2006-04-13

申请人： Hiroshi Sukegawa ,  Azusa Kanayama ,  Hiroyuki Kamei

发明人： Hiroshi Sukegawa ,  Azusa Kanayama ,  Hiroyuki Kamei

IPC分类号： G06F13/14 ,  G06F12/00

CPC分类号： G06K19/07732 ,  G06K19/077 ,  H01L2224/32145 ,  H01L2224/48227 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00

摘要： An integrated semiconductor memory device for use within an integrated USB memory apparatus has a controller, a flash memory in communication with the controller, a USB interface circuit in communication with the memory controller, and an integrated circuit package for maintaining at least one of the controller, the flash memory, and the USB interface within the physical dimensions of a USB connector of the USB memory apparatus.

摘要翻译： 在集成的USB存储装置中使用的集成半导体存储器件具有控制器，与控制器通信的闪速存储器，与存储器控制器通信的USB接口电路，以及用于维持控制器中的至少一个的集成电路封装 ，闪存和USB接口在USB存储设备的USB连接器的物理尺寸内。

公开(公告)号：US06551652B2

公开(公告)日：2003-04-22

申请号：US09451147

申请日：1999-11-30

申请人： Hong Qiu ,  Soichi Moriya ,  Hiroyuki Kamei ,  Koji Sumi ,  Masami Murai ,  Tsutomu Nishiwaki

发明人： Hong Qiu ,  Soichi Moriya ,  Hiroyuki Kamei ,  Koji Sumi ,  Masami Murai ,  Tsutomu Nishiwaki

IPC分类号： B05D512

CPC分类号： C23C18/1254 ,  C23C18/1216 ,  C23C18/1225 ,  H01L41/1876 ,  H01L41/318 ,  Y10T29/42

摘要： A piezoelectric element having a piezoelectric film where the difference in the quantity of lead along the thickness of the film is minimized. The film is obtained by first applying, at least once, a first sol for use in forming a PZT film on a substrate having a lower electrode formed thereon. Second, applying a second sol having the greater lead content than the first sol. Third, subjecting these films to heat treatment at a predetermined temperature at least once. The second sol has a composition capable of forming a piezoelectric film having a Perovskite structure expressed generally by AxByO3, and the content of material constituting the A site of the first sol is greater than what constitutes the A site of the second sol.

摘要翻译： 具有压电膜的压电元件，其中沿着膜的厚度的铅的量的差最小化。 通过首先在其上形成有下电极的基板上施加至少一次用于形成PZT膜的第一溶胶来获得膜。 其次，应用比第一溶胶具有更大铅含量的第二溶胶。 第三，使这些膜在预定温度下进行至少一次的热处理。 第二溶胶具有能够形成具有通常由AxByO3表示的钙钛矿结构的压电膜的组合物，构成第一溶胶的A位置的材料的含量大于构成第二溶胶的A位置的材料的含量。

公开(公告)号：US06294860B1

公开(公告)日：2001-09-25

申请号：US09431088

申请日：1999-11-01

申请人： Masato Shimada ,  Tetsushi Takahashi ,  Hiroyuki Kamei ,  Hong Qiu

发明人： Masato Shimada ,  Tetsushi Takahashi ,  Hiroyuki Kamei ,  Hong Qiu

IPC分类号： H01L4108

CPC分类号： H01L41/318 ,  B41J2/14233 ,  B41J2002/14258 ,  C04B35/493 ,  C04B35/6264 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3241 ,  C04B2235/3251 ,  C04B2235/3255 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C04B2235/3275 ,  C04B2235/3279 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/3294 ,  C04B2235/3296 ,  C04B2235/441 ,  C04B2235/449 ,  C04B2235/656 ,  C04B2235/661 ,  C04B2235/76 ,  C04B2235/765 ,  C04B2235/768 ,  C04B2235/787 ,  C04B2235/80 ,  H01L41/0805 ,  H01L41/094 ,  H01L41/0973 ,  H01L41/1876 ,  H01L41/316

摘要： The present invention provides a thin piezoelectric film having a high piezoelectric strain constant and a good adhesion with a lower electrode which can be produced without being cracked. The present invention also provides an ink jet recording head comprising this thin piezoelectric film as a vibrator. The thin piezoelectric film element of the present invention comprises a PZT film 14 made of a polycrystalline substance, and an upper electrode 16 and a lower electrode 12 arranged with the PZT film interposed therebetween. The grain boundary of the crystalline constituting the PZT film is present almost perpendicular to the surface of the electrode. Further, the orientation of the crystalline constituting the PZT film is controlled to a desired range.

摘要翻译： 本发明提供了一种具有高压电应变常数和与下部电极的良好粘合性的薄压电薄膜，可以在不破裂的情况下制造。 本发明还提供了一种喷墨记录头，其包括该薄压电薄膜作为振动器。 本发明的薄压电薄膜元件包括由多晶物质制成的PZT薄膜14，以及配置有PZT薄膜的上电极16和下电极12。 构成PZT膜的晶体的晶界几乎垂直于电极的表面。 此外，构成PZT膜的晶体的取向被控制在期望的范围。

公开(公告)号：US07845772B2

公开(公告)日：2010-12-07

申请号：US11858969

申请日：2007-09-21

申请人： Hiroyuki Kamei

发明人： Hiroyuki Kamei

IPC分类号： B41J2/045

CPC分类号： B41J2/14233 ,  B41J2/055 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1646 ,  B41J2002/14241 ,  B41J2002/14419 ,  B41J2202/03

摘要： An actuator device includes a piezoelectric element configured to include a lower electrode provided on a surface side of a substrate, a piezoelectric layer provided on the lower electrode, and an upper electrode provided on the piezoelectric layer. The lower electrode contains a precious metal. When a cross-section of the lower electrode is examined in the thickness direction using secondary ion mass spectroscopy (SIMS), a ratio Z1/Z2 between the intensity Z1 of oxygen ions and the intensity Z2 of ions of a precious metal detected at the surface of the lower electrode facing the substrate is 0.2 or more.

摘要翻译： 致动器装置包括压电元件，其被构造为包括设置在基板的表面侧的下电极，设置在下电极上的压电层和设置在压电层上的上电极。 下电极含有贵金属。 当使用二次离子质谱法（SIMS）在厚度方向上检查下部电极的横截面时，氧离子的强度Z1与在表面检测到的贵金属的离子的强度Z2之比Z 1 / Z 2 面向基板的下电极为0.2以上。

公开(公告)号：US20070026561A1

公开(公告)日：2007-02-01

申请号：US11480474

申请日：2006-07-05

申请人： Hiroyuki Kamei

发明人： Hiroyuki Kamei

IPC分类号： H01L21/00

CPC分类号： B41J2/161 ,  B41J2/1623 ,  B41J2/1629 ,  B41J2/1632 ,  B41J2/1635 ,  B41J2/1646 ,  B41J2002/14241 ,  B41J2002/14419 ,  B41J2002/14491 ,  B41J2202/03 ,  H01L41/1876 ,  H01L41/317 ,  H01L41/319 ,  Y10T29/42 ,  Y10T29/49126 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49147 ,  Y10T29/49401

摘要： While a piezoelectric element is being formed by sequentially laminating a lower electrode whose uppermost layer is made of iridium, a titanium layer, a piezoelectric layer and an upper electrode to each other on a substrate, the piezoelectric layer is formed, by an MOD method, on the titanium layer with an contact angle of water to the surface thereof which is no less than 40°.

摘要翻译： 虽然通过在衬底上顺序地层叠最上层由铱，钛层，压电层和上电极构成的下电极来形成压电元件，但通过MOD法形成压电层， 在钛层上，其表面与水的接触角不小于40°。

公开(公告)号：US06869170B2

公开(公告)日：2005-03-22

申请号：US09977197

申请日：2001-10-16

申请人： Masato Shimada ,  Yoshinao Miyata ,  Hiroyuki Kamei ,  Tetsushi Takahashi

发明人： Masato Shimada ,  Yoshinao Miyata ,  Hiroyuki Kamei ,  Tetsushi Takahashi

IPC分类号： B41J2/14 ,  B41J2/16 ,  B41J2/045

CPC分类号： B41J2/1629 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1635 ,  B41J2/1646 ,  B41J2002/14241 ,  B41J2002/14419 ,  B41J2002/14491

摘要： Provided is an ink-jet recording head that prevents a vibration plate thereof from damage attributed to drive of a piezoelectric element, and an ink-jet recording apparatus. There are provided within a region facing the pressure generating chamber, a piezoelectric active portion, and a piezoelectric non-active portions, the piezoelectric non-active portions being provided on both end portions of the piezoelectric active portion in a longitudinal direction thereof. An electrode wiring is drawn out of an upper electrode which is provided on one end portion in the longitudinal direction of the pressure generating chamber. There is also provided a protection layer on the other end portion in the longitudinal direction of the pressure generating chamber for protecting the vibration plate. Rigidity of the vibration plate is thereby increased.

摘要翻译： 提供了防止其振动板由于压电元件的驱动而引起的损坏的喷墨记录头和喷墨记录装置。 设置在面向压力发生室的区域，压电有源部分和压电非有效部分中，压电非有效部分沿其纵向方向设置在压电有源部分的两端部分上。 从设置在压力发生室的长度方向的一个端部的上部电极引出电极配线。 在压力发生室的长度方向的另一端部还设有用于保护振动板的保护层。 因此振动板的刚度增加。

公开(公告)号：US06502930B1

公开(公告)日：2003-01-07

申请号：US09806699

申请日：2001-04-04

申请人： Masato Shimada ,  Akira Matsuzawa ,  Yoshinao Miyata ,  Tsutomu Nishiwaki ,  Hiroyuki Kamei

发明人： Masato Shimada ,  Akira Matsuzawa ,  Yoshinao Miyata ,  Tsutomu Nishiwaki ,  Hiroyuki Kamei

IPC分类号： B41J214

CPC分类号： B41J2/1629 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2002/14241 ,  B41J2002/1437 ,  B41J2002/14419 ,  B41J2002/14491

摘要： Disclosed are an ink-jet recording head, in which the rigidity of the compartment wall is improved, pressure generating chambers can be arranged in a high density, and cross talk between the pressure generating chambers is reduced, and a manufacturing method of the same and an ink-jet recording apparatus. In an ink-jet recording head including a passage-forming substrate (10) having a silicon layer consisting of single crystal silicon, in which a pressure generating chamber (15) communicating with a nozzle orifice is defined; and a piezoelectric element (300) for generating a pressure change in the pressure generating chamber, the piezoelectric element being provided on a region facing the pressure generating chamber (15) via a vibration plate constituting a part of the pressure generating chamber (15), the pressure generating chamber (15) is formed so as to open to one surface of the passage-forming substrate (10) and not to penetrate therethrough, at least a bottom surface of inner surfaces of the pressure generating chamber (15), which is facing to the one surface, is constituted of an etching stop surface as a surface in which anisotropic etching stops, and the piezoelectric element (300) is provided on the one surface side of the passage-forming substrate (10) by a film formed by film deposition technology and a lithography method.

摘要翻译： 公开了一种喷墨记录头，其中室壁的刚度提高，压力发生室可以高密度地布置，并且压力发生室之间的串扰减少，并且其制造方法和 一种喷墨记录装置。 在包括具有由单晶硅组成的硅层的通道形成基板（10）的喷墨记录头中，其中限定了与喷嘴孔连通的压力发生室（15） 以及用于在所述压力发生室中产生压力变化的压电元件（300），所述压电元件经由构成所述压力发生室（15）的一部分的振动板设置在面对所述压力发生室（15）的区域上， 压力发生室15形成为在通道形成基板（10）的一个表面上开口，并且至少在压力发生室（15）的内表面的底表面上不穿透压力发生室 由作为各向异性蚀刻停止的表面的蚀刻停止面构成压电元件（300），在通路形成用基板（10）的一个表面侧，通过由 薄膜沉积技术和光刻方法。