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    DIAGNOSTIC IMAGING SUPPORT EQUIPMENT
    1.
    发明申请
    DIAGNOSTIC IMAGING SUPPORT EQUIPMENT 有权
    诊断成像支持设备

    公开(公告)号：US20080212854A1

    公开(公告)日：2008-09-04

    申请号：US12032266

    申请日：2008-02-15

    申请人： Hiroshi FUKATSU ,  Maki Minakuchi ,  Muneyasu Kazuno ,  Kenichi Niwa ,  Hiroyuki Yamasaki

    发明人： Hiroshi FUKATSU ,  Maki Minakuchi ,  Muneyasu Kazuno ,  Kenichi Niwa ,  Hiroyuki Yamasaki

    IPC分类号： G06K9/00 ,  G06K9/32

    CPC分类号： G06F19/321 ,  G06F19/00

    摘要： The present invention comprises: a data storage unit for storing series image data obtained by medical image acquisition equipment and object data containing image acquisition conditions for the series image data and the specific information for specifying other series image data related to the series image data; an information management unit for generating a thumbnail image that represents combination information of the presently obtained series image data and the past related series image data by referring to the object data; and a display unit for displaying the thumbnail image.

    摘要翻译： 本发明包括：数据存储单元，用于存储由医学图像获取设备获得的系列图像数据和包含用于串行图像数据的图像获取条件的对象数据和用于指定与该系列图像数据相关的其他系列图像数据的特定信息; 信息管理单元，用于通过参照对象数据生成表示当前获得的串联图像数据和过去相关串联图像数据的组合信息的缩略图图像; 以及用于显示缩略图图像的显示单元。

    Image forming apparatus with endless transfer member
    4.
    发明授权
    Image forming apparatus with endless transfer member 失效
    具有无端传送构件的图像形成装置

    公开(公告)号：US5485257A

    公开(公告)日：1996-01-16

    申请号：US326003

    申请日：1994-10-19

    申请人： Masahide Ueda ,  Tomoo Izumi ,  Hiroyuki Yamasaki ,  Atsuto Hirai ,  Masahiko Matsuura ,  Eiichi Sano ,  Yoshihisa Terasaka ,  Masami Yamada ,  Satoshi Yoshida

    发明人： Masahide Ueda ,  Tomoo Izumi ,  Hiroyuki Yamasaki ,  Atsuto Hirai ,  Masahiko Matsuura ,  Eiichi Sano ,  Yoshihisa Terasaka ,  Masami Yamada ,  Satoshi Yoshida

    IPC分类号： G03G15/01 ,  G03G15/00 ,  G03G15/16 ,  G03G21/00 ,  H04N1/00 ,  H04N1/29 ,  G03G15/14

    CPC分类号： G03G15/50 ,  G03G15/1605 ,  H04N1/295

    摘要： The present invention relates to a method of producing a plurality sets of prints from a plural-page original in an image forming apparatus having an endless transfer member onto which images are transferred from an image retaining member. The endless transfer member is operable to support a predetermined number (X) of images during one cyclic movement thereof. In this method, a first printing operation is executed in which the predetermined number (X) of images of a first page of the original are formed on the endless transfer member during one cyclic movement thereof when a desired number (Y) of sets of prints exceeds said predetermined number (X). Second, the first printing operation is repeated until a remaining number (M) of image(s) of the first page becomes less than said predetermined number (X). Third, a second printing operation is executed in which the remaining number (M) of image(s) of the first page and a calculated number (X-M) of image(s) of a second page of the original are formed on said endless transfer member during one cyclic movement thereof after the remaining number (M) of image(s) of the first page becomes less than the predetermined number (X).

    摘要翻译： 本发明涉及一种在图像形成装置中从多页原稿生产多组印刷品的方法，该图像形成装置具有从图像保持部件转印到其上的环形转印部件。 无端传送构件可操作以在其一次循环移动期间支撑预定数量（X）的图像。 在该方法中，执行第一打印操作，其中，当期望的数量（Y）的打印集合（Y）的一个循环移动期间，原稿的第一页的预定数量（X）的图像形成在环形转印部件上时， 超过所述预定数（X）。 其次，重复第一打印操作，直到第一页的图像的剩余数（M）变得小于所述预定数（X）为止。 第三，执行第二打印操作，其中在所述循环传送上形成第一页的图像的剩余数量（M）和原稿的第二页的图像的计算数（XM） 在第一页的图像的剩余数（M）变得小于预定数量（X）之后的一个循环移动期间。

    FORMATION OF A TRENCH SILICIDE
    7.
    发明申请
    FORMATION OF A TRENCH SILICIDE 审中-公开
    形成硅胶

    公开(公告)号：US20130270614A1

    公开(公告)日：2013-10-17

    申请号：US13448513

    申请日：2012-04-17

    申请人： Hiroyuki Yamasaki

    发明人： Hiroyuki Yamasaki

    IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/336

    CPC分类号： H01L29/0847 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76816 ,  H01L21/76834 ,  H01L21/76897 ,  H01L29/665 ,  H01L29/78

    摘要： Systems and methods are presented for controlling formation of a silicide region. A selective etch layer is utilized to control formation of a trench opening, and further can be utilized to open up a trench to facilitate correct exposure of an active Si region to subsequently form a silicide. Issues regarding over-dimension, under-dimension, and misalignment of a trench are addressed. The selective etch material is chosen to facilitate control of the trench formation and also to enable removal of the selective etch layer without affecting any adjacent structures/material. The selective etch layer can be an oxide, for example aluminum oxide, Al2O3. The selective etch layer can be utilized to prevent formation of silicide in a channel beneath a raised source/drain.

    摘要翻译： 呈现用于控制硅化物区域的形成的系统和方法。 使用选择性蚀刻层来控制沟槽开口的形成，并且还可以用于打开沟槽以促进有源Si区域的正确曝光以随后形成硅化物。 关于沟槽尺寸过大，尺寸不合格和未对准的问题得到了解决。 选择性蚀刻材料被选择以便于控制沟槽形成，并且还能够去除选择性蚀刻层而不影响任何相邻的结构/材料。 选择性蚀刻层可以是氧化物，例如氧化铝，Al 2 O 3。 选择性蚀刻层可用于防止在升高的源极/漏极下方的沟道中形成硅化物。

    TRANSISTOR STRUCTURE AND MANUFACTURING METHOD WHICH HAS CHANNEL EPITAXIAL EQUIPPED WITH LATERAL EPITAXIAL STRUCTURE
    8.
    发明申请
    TRANSISTOR STRUCTURE AND MANUFACTURING METHOD WHICH HAS CHANNEL EPITAXIAL EQUIPPED WITH LATERAL EPITAXIAL STRUCTURE 审中-公开
    具有侧向外延结构的通道外形的晶体管结构和制造方法

    公开(公告)号：US20120241866A1

    公开(公告)日：2012-09-27

    申请号：US13070561

    申请日：2011-03-24

    申请人： Hiroyuki Yamasaki

    发明人： Hiroyuki Yamasaki

    IPC分类号： H01L29/772 ,  H01L21/336

    CPC分类号： H01L27/1104 ,  H01L21/28123 ,  H01L21/76232 ,  H01L29/1054 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66651 ,  H01L29/78

    摘要： A semiconductor device and methods of fabricating semiconductor devices are provided. Provided is an epitaxial layer equipped with a lateral epitaxial layer that can block a Shallow Trench Isolation (STI) edge from a downstream etching process step, which can result in a reduced STI divot. A method involves forming a semiconductor substrate on a source region and a drain region and forming a semiconductor region on the semiconductor substrate. The method also comprises creating at least a first isolation feature adjacent to the semiconductor region and depositing an epitaxial layer on the semiconductor region and laterally between the semiconductor region and the at least the first isolation feature.

    摘要翻译： 提供半导体器件和制造半导体器件的方法。 提供了一种外延层，其具有可以从下游蚀刻工艺步骤阻挡浅沟槽隔离（STI）边缘的横向外延层，这可能导致STI纹路减小。 一种方法包括在源区和漏区上形成半导体衬底，并在半导体衬底上形成半导体区。 该方法还包括至少创建与半导体区域相邻的第一隔离特征，并在半导体区域上以及在半导体区域与至少第一隔离特征之间横向地沉积外延层。

    Optical head and optical head device
    9.
    发明授权
    Optical head and optical head device 失效
    光头和光头设备

    公开(公告)号：US07489617B2

    公开(公告)日：2009-02-10

    申请号：US11489484

    申请日：2006-07-20

    申请人： Hiroyuki Yamasaki ,  Yasushi Kobayashi ,  Manami Kuiseko

    发明人： Hiroyuki Yamasaki ,  Yasushi Kobayashi ,  Manami Kuiseko

    IPC分类号： G11B7/00

    CPC分类号： G11B7/1387 ,  G11B7/1359 ,  G11B7/1362 ,  G11B7/1384

    摘要： An optical head which has a prism with an incident section, an internal reflective surface and an emergent surface, and an optical head device which employs the optical head. Light emitted from a light source is incident to the prism through the incident section, reflects at least once on the internal reflective surface and is converged in the vicinity of the emergent surface. Then, the light effuses through the emergent surface as near field light.

    摘要翻译： 具有入射部分的棱镜，内部反射表面和出射表面的光学头，以及使用该光学头的光学头装置。 从光源发射的光通过入射部入射到棱镜，至少在内反射面上反射一次并会聚到出射面附近。 然后，光通过出射表面流过近场光。

    Semiconductor device having a shaped gate electrode and method of manufacturing the same
    10.
    发明授权
    Semiconductor device having a shaped gate electrode and method of manufacturing the same 失效
    具有成形栅电极的半导体器件及其制造方法

    公开(公告)号：US07394120B2

    公开(公告)日：2008-07-01

    申请号：US11146029

    申请日：2005-06-07

    申请人： Hiroyuki Yamasaki ,  Hitoshi Ito

    发明人： Hiroyuki Yamasaki ,  Hitoshi Ito

    IPC分类号： H01L29/78

    CPC分类号： H01L29/4238 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834

    摘要： An MIS transistor includes a gate electrode located to intersect a device region of a semiconductor substrate isolated by a device isolation region, and source and drain regions formed in the semiconductor substrate at both sides of the gate electrode region and elevated source and drain located above the source and drain regions. A gate length of the gate electrode at a boundary between the device isolation region and the device region is longer than the gate length at a central portion of the device region.

    摘要翻译： MIS晶体管包括位于与器件隔离区隔离的半导体衬底的器件区域相交的栅电极，以及形成在栅电极区两侧的半导体衬底中的源区和漏区以及位于 源极和漏极区域。 在器件隔离区域和器件区域之间的边界处的栅电极的栅极长度大于器件区域的中心部分处的栅极长度。