摘要:
Certain embodiments provide an infrared imaging device including: an SOI structure that is placed at a distance from a substrate, and includes: heat-sensitive diodes that detect infrared rays and convert the infrared rays into heat; and STI regions that separate the heat-sensitive diodes from one another; an interlayer insulating film that is stacked on the SOI structure; and supporting legs that are connected to the heat-sensitive diodes and vertical signal lines provided in outer peripheral regions of the heat-sensitive diodes. Each of the supporting legs includes: an interconnect unit that transmit signals to the vertical signal lines; and interlayer insulating layers that sandwich the interconnect unit, each bottom side of the interlayer insulating layers being located in a higher position than the SOI structure.
摘要:
An image sensor includes a semiconductor substrate; first pixels laid out above cavities provided within the semiconductor substrate, the first pixels converting thermal energy generated by incident light into an electric signal; supporting parts connected between the first pixels and the semiconductor substrate, the supporting parts supporting the first pixels above the cavities; and second pixels fixedly provided on the semiconductor substrate without via the cavities, wherein a plurality of the first pixels and a plurality of the second pixels are laid out two-dimensionally to form a pixel region, and each of the second pixels is adjacent to the first pixels.
摘要:
A pattern forming apparatus includes an intaglio having a pattern of depressions, developing units which form a first potential difference with the intaglio, supply a liquid developer containing charged phosphor particles to the pattern and develop by aggregating the phosphor particles in the depressions, and a transfer roller which forms a second potential difference with the developed intaglio and a glass sheet arranged in opposed relation to each other and sequentially transfers the phosphor particles aggregated in the depressions to the glass sheet.
摘要:
This invention is to provide an electrophotographic photosensitive body used in a wet electrophotographic apparatus and including a substrate having a conductive surface, and a photosensitive layer formed on the conductive surface of the substrate and changing in a charged state upon being irradiated with light, the photosensitive layer having, on an exposed surface, C—F bonds and C—H bonds for which the ratio of the number NCF of C—F bonds to the number NCH of C—H bonds satisfies, on the exposed surface of the photosensitive layer, a relationship represented by 2/100
摘要:
An image forming apparatus with high release characteristic of a toner image, which can acquire a good imprint for a long time, is provided. In the image forming apparatus using the liquid development method, by giving release agent under the visible image formed by the liquid development, which forms release layer on latent image support before development, and is, the image forming apparatus with high release characteristic of a toner image, which can acquire good transfer characteristic for a long time, is realized.
摘要:
This invention provides an electrophotographic photosensitive body including a photosensitive layer containing a chemical substance selected from a compound having a polysilazane skeleton, a compound having an Si—CnH2n+1 bond and one of an Si—N bond and an Si—C—N bond, a compound having an Si—CnF2n+1 bond and one of an Si—N bond and an Si—C—N bond, and a mixture of a compound having one of an Si—N bond and an Si—C—N bond and a compound having a C—F bond, an intermediate transfer medium including a surface layer containing the chemical substance, and an electrophotographic apparatus using the same.
摘要:
An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
摘要:
The oxalic acid aqueous solution filled in an electrolytic tank is electrolyzed with an electrolyzer to produce carbonic acid gas, while ultrasonic wave from an ultrasonic generator is applied to the produced carbonic acid gas bubbles, to form micro bubbles, which is dissolved in said oxalic acid aqueous solution, so as to easily produce carbonic acid gas solution with micro carbonic acid gas bubbles dissolved at a low cost; said carbonic acid gas solution can substitute carbonated spring.
摘要:
An infrared imaging element according to an embodiment includes: a semiconductor substrate including a stacked structure of a silicon first substrate, and a first insulation film, first cavities being provided on a surface of the first substrate; an infrared detection unit provided in the semiconductor substrate and including, detection cells provided respectively over the first cavities, each of the detection cells having diodes and a second insulation film, the first insulation film converting incident infrared rays to heat, the diodes converting the heat obtained by the first insulation film to an electric signal, a third insulation film having a top face located at a greater distance from the semiconductor substrate as compared with a top face of the second insulation film; and a second substrate provided over the third insulation film. A second cavity is formed between the second substrate and the infrared detection unit.
摘要:
An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.