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公开(公告)号：US06862798B2
公开(公告)日：2005-03-08
申请号：US10054621
申请日：2002-01-18
CPC分类号： G11B5/1272 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/4906
摘要： A method of making a magnetic head assembly wherein the magnetic head assembly has a write head with a pole tip includes the steps of forming a shaping layer on an underlying layer wherein the shaping layer has a side surface and a top surface, ion beam sputter depositing a ferromagnetic material layer on the underlying layer and on the side and top surfaces of the shaping layer and removing first and second portions of the ferromagnetic material layer from the underlying layer and the top surface of the shaping layer, respectively, leaving a remaining portion of the ferromagnetic material layer on the side surface of the shaping layer which is the aforementioned pole tip.
摘要翻译： 一种制造磁头组件的方法，其中磁头组件具有带磁极端头的写入头包括以下步骤：在下层上形成成形层，其中成形层具有侧表面和顶表面，离子束溅射沉积 在成形层的下层和侧表面和顶表面上的铁磁材料层，分别从成形层的下层和顶表面去除铁磁材料层的第一和第二部分，留下剩余部分 作为上述极尖的成形层的侧面上的铁磁材料层。
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公开(公告)号：US07365408B2
公开(公告)日：2008-04-29
申请号：US10135754
申请日：2002-04-30
IPC分类号： H01L31/0232
CPC分类号： B82Y25/00 , B82Y10/00 , G03F7/091 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01L21/0276 , H01L21/0332
摘要： A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The bi-layer anti-reflection coating features a first layer, an absorption layer, disposed on a second layer, a dielectric layer, which is then disposed between a substrate and a photoresist layer. The dielectric/absorption layer comprises one combination selected from Ta/Al2O3, Ta/SiO2, Ta/TiO2, Ta/Ta2O5, Ta/Cr2O3, Ta/Si3N4, Ti/Al2O3, Ti/SiO2, Ti/TiO2, Ti/Ta2O5, Ti/Cr2O3, Ti/Si3N4, Cr/Al2O3, Cr/SiO2, Cr/TiO2, Cr/Ta2O5, Cr/Cr2O3, Cr/Si3N4, Al/Al2O3, Al/TiO2, Al/Ta2O5, Al/Cr2O3, Al/Si3N4, Ni/Al2O3, Ni/SiO2, Ni/TiO2, Ni/Ta2O5, Ni/Cr2O3, Ni/Si3N4, Ir/Al2O3, Ir/SiO2, Ir/TiO2, Ir/Ta2O5, Ir/Cr2O3, and Ir/Si3N4. At least the absorption and dielectric layers can be formed using vacuum deposition. A unique character of the bi-layer anti-reflective coatings is that it allows a thinner anti-reflection layer that has a wider process latitude.
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公开(公告)号：US20080124942A1
公开(公告)日：2008-05-29
申请号：US12019403
申请日：2008-01-24
CPC分类号： B82Y25/00 , B82Y10/00 , G03F7/091 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01L21/0276 , H01L21/0332
摘要： A bi-layer anti-reflective coating for use in photolithographic applications, and specifically, for use in ultraviolet photolithographic processes. The bi-layered anti-reflective coating is used to minimize pattern distortion due to reflections from neighboring features in the construction of microcircuits. The bi-layer anti-reflection coating features a first layer, an absorption layer, disposed on a second layer, a dielectric layer, which is then disposed between a substrate and a photoresist layer. The dielectric/absorption layer comprises one combination selected from Ta/Al2O3, Ta/SiO2, Ta/TiO2, Ta/Ta2O5, Ta/Cr2O3, Ta/Si3N4, Ti/Al2O3, Ti/SiO2, Ti/TiO2, Ti/Ta2O5, Ti/Cr2O3, Ti/Si3N4, Cr/Al2O3, Cr/SiO2, Cr/TiO2, Cr/Ta2O5, Cr/Cr2O3, Cr/Si3N4, Al/Al2O3, Al/TiO2, Al/Ta2O5, Al/Cr2O3, Al/Si3N4, Ni/Al2O3, Ni/SiO2, Ni/TiO2, Ni/Ta2O5, Ni/Cr2O3, Ni/Si3N4, Ir/Al2O3, Ir/SiO2, Ir/TiO2, Ir/Ta2O5, Ir/Cr2O3, and Ir/Si3N4. At least the absorption and dielectric layers can be formed using vacuum deposition. A unique character of the bi-layer anti-reflective coatings is that it allows a thinner anti-reflection layer that has a wider process latitude.
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4.发明申请公开(公告)号：US20080113090A1
公开(公告)日：2008-05-15
申请号：US11595765
申请日：2006-11-10
申请人： Hieu Lam , Patrick Rush Webb , Yi Zheng
发明人： Hieu Lam , Patrick Rush Webb , Yi Zheng
IPC分类号： B05D5/12
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/314 , G11B5/3163 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Methods and structures for the fabrication of wrap around and trailing shield structures are disclosed. Seed layers having anti-reflective properties are utilized, eliminating the need to deposit, then remove, traditional inorganic anti-reflection coatings prior to shield plating.
摘要翻译： 公开了用于制造包裹和后挡板结构的方法和结构。 利用具有抗反射性能的种子层，消除了在屏蔽电镀之前沉积，然后去除传统的无机抗反射涂层的需要。
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公开(公告)号：US07304821B2
公开(公告)日：2007-12-04
申请号：US10717112
申请日：2003-11-19
申请人： Richard Hsiao , Prakash Kasiraj , Quang Le , Paul Phong Nguyen , Son Van Nguyen , Denny D. Tang , Patrick Rush Webb
发明人： Richard Hsiao , Prakash Kasiraj , Quang Le , Paul Phong Nguyen , Son Van Nguyen , Denny D. Tang , Patrick Rush Webb
CPC分类号： G11B5/3163 , G11B5/17 , G11B5/313 , Y10T29/49043 , Y10T29/49048 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073 , Y10T29/49165
摘要： A Damascene process is provided for manufacturing a coil structure for a magnetic head. During the manufacturing process, an insulating layer is initially deposited after which a photoresist layer is deposited. A silicon dielectric layer is then deposited on the photoresist layer. After masking the silicon dielectric layer, at least one channel is etched in the photoresist layer and the silicon dielectric layer. Then, a conductive seed layer is deposited in the at least one channel. The at least one channel is then ready to be filled with a conductive material and chemically/mechanically polished to define a coil structure.
摘要翻译： 提供一种用于制造用于磁头的线圈结构的镶嵌工艺。 在制造过程中，首先沉积绝缘层，之后沉积光致抗蚀剂层。 然后在光致抗蚀剂层上沉积硅介电层。 在掩蔽硅介电层之后，在光致抗蚀剂层和硅介电层中蚀刻至少一个通道。 然后，在至少一个通道中沉积导电种子层。 然后至少一个通道准备用导电材料填充并进行化学/机械抛光以限定线圈结构。
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公开(公告)号：US06621660B2
公开(公告)日：2003-09-16
申请号：US09764019
申请日：2001-01-16
IPC分类号： G11B5147
CPC分类号： G11B5/3163 , G11B5/3116 , G11B5/313 , G11B5/3133 , Y10T29/4906
摘要： The electroplated components of a magnetic head of the present invention are fabricated utilizing a seed layer that is susceptible to reactive ion etch removal techniques. A preferred seed layer is comprised of tungsten or titanium. Following the electroplating of the components utilizing a fluorine species reactive ion etch process the seed layer is removed, and significantly, the fluorine RIE process creates a gaseous tungsten or titanium fluoride compound removal product. The problem of seed layer redeposition along the sides of the electroplated components is overcome because the gaseous fluoride compound is not redeposited. The present invention also includes an enhanced two part seed layer, where the lower part is tungsten, titanium or tantalum and the upper part is composed of the material that constitutes the component to be electroplated.
摘要翻译： 本发明的磁头的电镀部件利用易受反应离子蚀刻去除技术影响的晶种层来制造。 优选的种子层由钨或钛组成。 在利用氟物质反应离子蚀刻工艺对组分进行电镀之后，除去种子层，并且显着地，氟RIE工艺产生气态钨或氟化钛化合物去除产物。 由于气态氟化物不再沉积，克服了沿着电镀部件侧面的种子层再沉积的问题。 本发明还包括增强的两部分种子层，其中下部是钨，钛或钽，并且上部由构成待电镀部件的材料构成。
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7.发明授权公开(公告)号：US07397634B2
公开(公告)日：2008-07-08
申请号：US10602462
申请日：2003-06-23
IPC分类号： G11B5/17
CPC分类号： G11B5/313 , G11B5/3123 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/4906 , Y10T29/49064 , Y10T29/49073
摘要： A system and method are provided for manufacturing a coil structure for a magnetic head. Initially, an insulating layer is deposited with a photoresist layer deposited on the insulating layer. Moreover, a silicon dielectric layer is deposited on the photoresist layer as a hard mask. The silicon dielectric layer is then masked. A plurality of channels is subsequently formed in the silicon dielectric layer using reactive ion etching (i.e. CF4/CHF3). The silicon dielectric layer is then used as a hard mask to transfer the channel pattern in the photoresist layer using reactive ion etching with, for example, H2/N2/CH3F/C2H4 reducing chemistry. To obtain an optimal channel profile with the desired high aspect ratio, channel formation includes a first segment defining a first angle and a second segment defining a second angle. Thereafter, a conductive seed layer is deposited in the channels and the channels are filled with a conductive material to define a coil structure. Chemical-mechanical polishing may then be used to planarize the conductive material.
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公开(公告)号：US07228618B2
公开(公告)日：2007-06-12
申请号：US10970632
申请日：2004-10-20
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , Y10T29/49021 , Y10T29/49043 , Y10T29/49044 , Y10T29/49067
摘要： A magnetic head having a spin valve sensor that is fabricated utilizing an Al2O3, NiMn0, Si seed layer upon which a PtMn spin valve sensor layer structure is subsequently fabricated. In the preferred embodiment, the Si layer has a thickness of approximately 20 Å and the PtMn layer has a thickness of approximately 120 Å. An alternative fabrication process of the Si layer includes the overdeposition of the layer to a first thickness of from 15 Å to 45 Å followed by the etching back of the seed layer of approximately 5 Å to approximately 15 Å to its desired final thickness of approximately 20 Å. The Si layer results in an improved crystal structure to the subsequently fabricated PtMn and other spin valve sensor layers, such that the fabricated spin valve is thinner and exhibits increased ΔR/R and reduced coercivity.
摘要翻译： 具有自旋阀传感器的磁头，其使用随后制造PtMn自旋阀传感器层结构的Al 2 O 3 N，NiMnO，Si种子层制造。 在优选实施例中，Si层的厚度约为20埃，PtMn层的厚度约为120埃。 Si层的替代制造工艺包括将该层过度沉积到第一厚度为从Å至Å至的第一厚度，接着将种子层的蚀刻回到大约5至大约15至所期望的最终厚度约为20 一个。 Si层导致随后制备的PtMn和其它自旋阀传感器层的改进的晶体结构，使得制造的自旋阀更薄并且表现出增加的DeltaR / R和降低的矫顽力。
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公开(公告)号：US07061729B2
公开(公告)日：2006-06-13
申请号：US10150314
申请日：2002-05-16
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3909 , G11B2005/3996
摘要： A lead overlay magnetic sensor for use in a disk drive is provided having a protective cap layer disposed between the electrical leads and the sensor. The protective cap layer is preferably formed from ruthenium, rhodium, or other suitable material. The sensors thus formed have low resistance between the electrical leads and the sensor and also have well defined magnetic trackwidths.
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公开(公告)号：US06996894B2
公开(公告)日：2006-02-14
申请号：US10109110
申请日：2002-03-28
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： Methods of making a read head with improved contiguous junctions are described. After sensor layer materials are deposited over a substrate, a lift-off mask is formed over the sensor layer materials in a central region which is surrounded by end regions. Ion milling is performed with use of the lift-off mask such that the sensor layer materials in the end regions are removed and those in the central region remain to form a read sensor. A high-angle ion mill (e.g. between 45–80 degrees) is then performed to remove redeposited material from side walls of the lift-off mask. Next, a reactive ion etch (RIE) is used to reduce the thickness and the width of the lift-off mask and to remove capping layer materials from the top edges of the read sensor. With the reduced-size lift-off mask in place, hard bias and lead layers are deposited adjacent the read sensor as well as over the mask. The reduced-size lift-off mask allows the amount of hard bias to be increased in the contiguous junction region, and the edges of the leads to be deposited more closely over the top edges of the read sensor. Advantageously, the stability of the sensor is enhanced and the transfer curve is improved using a method which can be controlled independently from the initial mask structure and ion milling process. No critical alignments or multiple photoresist processes are necessary.
摘要翻译： 描述了制造具有改进的连续结的读取头的方法。 在传感器层材料沉积在衬底上之后，在由端部区域包围的中心区域中的传感器层材料上形成剥离掩模。 使用剥离掩模进行离子铣削，使得端部区域中的传感器层材料被去除，并且在中心区域中的传感器层材料保持形成读取传感器。 然后执行高角度离子磨（例如在45-80度之间）以从剥离掩模的侧壁去除再沉积的材料。 接下来，使用反应离子蚀刻（RIE）来减小剥离掩模的厚度和宽度，并从读取传感器的顶部边缘去除封盖层材料。 随着尺寸减小的剥离掩模就位，硬读取传感器以及掩模附近沉积了硬偏置和引线层。 缩小尺寸的剥离掩模允许在连续接合区域中增加硬偏置的量，并且引线的边缘更紧密地沉积在读取传感器的顶部边缘上。 有利地，增强了传感器的稳定性，并且使用可以独立于初始掩模结构和离子铣削过程进行控制的方法来提高传递曲线。 不需要临界对准或多个光刻胶工艺。
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