公开(公告)号：US11299683B2

公开(公告)日：2022-04-12

申请号：US17253478

申请日：2017-09-25

申请人： Shu-min Chen ,  Hung-lin Chen

发明人： Hunglin Chen ,  Shumin Chen

IPC分类号： C10L1/04

摘要： A liquid fuel obtained by blending heavy oil by selectively introducing hydrocarbon substances. The liquid fuel consists of a light oil component consisting of C6-C12 alkane, a catalytic component consisting of C13-C16 alkane, and a heavy oil component. On the basis of the liquid fuel, the mass fraction of the heavy oil component is 10%-90%, the mass fraction of the light oil component is 0-49%, and the mass of the catalytic component accounts for 86% or more of the mass of the light oil component; and the liquid fuel may also contain an aromatic hydrocarbon having a mass fraction of 0-15%. The obtained liquid fuel has good driving performance, combustion performance and safety, and can be applied to a diesel engine system, a diesel/heavy oil combustion system, etc., as a mixed fuel oil.

公开(公告)号：US20210163836A1

公开(公告)日：2021-06-03

申请号：US17253478

申请日：2017-09-25

申请人： Shu-min CHEN ,  Hung-lin CHEN

发明人： Hunglin CHEN ,  Shumin CHEN

IPC分类号： C10L1/04

摘要： A liquid fuel obtained by blending heavy oil by selectively introducing hydrocarbon substances. The liquid fuel consists of a light oil component consisting of C6-C12 alkane, a catalytic component consisting of C13-C16 alkane, and a heavy oil component. On the basis of the liquid fuel, the mass fraction of the heavy oil component is 10%-90%, the mass fraction of the light oil component is 0-49%, and the mass of the catalytic component accounts for 86% or more of the mass of the light oil component; and the liquid fuel may also contain an aromatic hydrocarbon having a mass fraction of 0-15%. The obtained liquid fuel has good driving performance, combustion performance and safety, and can be applied to a diesel engine system, a diesel/heavy oil combustion system, etc., as a mixed fuel oil.

公开(公告)号：US20110241179A1

公开(公告)日：2011-10-06

申请号：US13164523

申请日：2011-06-20

申请人： Ming-Chang Hsieh ,  Hung-Lin Chen ,  Hsiu-Mei Yu ,  Chin Kun Lan ,  Dong-Lung Lee

发明人： Ming-Chang Hsieh ,  Hung-Lin Chen ,  Hsiu-Mei Yu ,  Chin Kun Lan ,  Dong-Lung Lee

IPC分类号： H01L23/544

CPC分类号： H01L23/585 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a method of making an integrated circuit (IC) device. The method includes forming a first IC feature and a second IC feature in a semiconductor substrate, the first and second IC features being spaced from each other and separated by a scribe region; forming, in the semiconductor substrate, a doped routing feature at least partially within the scribe region and configured to connect the first and second IC features; forming a multilayer interconnect (MLI) structure and an interlayer dielectric (ILD) on the semiconductor substrate, wherein the MLI is configured to be absent within the scribe region; and etching the ILD and the semiconductor substrate within the scribe region to form a scribe-line trench.

摘要翻译： 本公开提供了一种制造集成电路（IC）装置的方法。 该方法包括在半导体衬底中形成第一IC特征和第二IC特征，第一和第二IC特征彼此间隔开并由划线区分开; 在所述半导体衬底中至少部分地在所述划线区域内形成掺杂的布线特征并且被配置为连接所述第一和第二IC特征; 在所述半导体衬底上形成多层互连（MLI）结构和层间电介质（ILD），其中所述MLI被配置为在所述划线区域内不存在; 并且在刻划区域内蚀刻ILD和半导体衬底以形成划线沟槽。

公开(公告)号：US07968431B2

公开(公告)日：2011-06-28

申请号：US12173121

申请日：2008-07-15

申请人： Ming-Chang Hsieh ,  Hung-Lin Chen ,  Hsiu-Mei Yu ,  Chin Kun Lan ,  Dong-Lung Lee

发明人： Ming-Chang Hsieh ,  Hung-Lin Chen ,  Hsiu-Mei Yu ,  Chin Kun Lan ,  Dong-Lung Lee

IPC分类号： H01L23/544

CPC分类号： H01L23/585 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a method of making an integrated circuit (IC) device. The method includes forming a first IC feature and a second IC feature in a semiconductor substrate, the first and second IC features being spaced from each other and separated by a scribe region; forming, in the semiconductor substrate, a doped routing feature at least partially within the scribe region and configured to connect the first and second IC features; forming a multilayer interconnect (MLI) structure and an interlayer dielectric (ILD) on the semiconductor substrate, wherein the MLI is configured to be absent within the scribe region; and etching the ILD and the semiconductor substrate within the scribe region to form a scribe-line trench.

摘要翻译： 本公开提供了一种制造集成电路（IC）装置的方法。 该方法包括在半导体衬底中形成第一IC特征和第二IC特征，第一和第二IC特征彼此间隔开并由划线区分开; 在所述半导体衬底中至少部分地在所述划线区域内形成掺杂的布线特征并且被配置为连接所述第一和第二IC特征; 在所述半导体衬底上形成多层互连（MLI）结构和层间电介质（ILD），其中所述MLI被配置为在所述划线区域内不存在; 并且在刻划区域内蚀刻ILD和半导体衬底以形成划线沟槽。

公开(公告)号：US20110084391A1

公开(公告)日：2011-04-14

申请号：US12842753

申请日：2010-07-23

申请人： Shyh-Wei Cheng ,  Pin-Shyne Chin ,  Kuo-Chio Liu ,  Che-Jung Chu ,  Ming-Chang Hsieh ,  Hung-Lin Chen ,  Tian Sheng Lin

发明人： Shyh-Wei Cheng ,  Pin-Shyne Chin ,  Kuo-Chio Liu ,  Che-Jung Chu ,  Ming-Chang Hsieh ,  Hung-Lin Chen ,  Tian Sheng Lin

IPC分类号： H01L23/532

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02313 ,  H01L2224/0233 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05022 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05599 ,  H01L2224/13006 ,  H01L2224/13023 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2224/05552

摘要： An integrated circuit structure includes a semiconductor substrate; a first titanium layer over the semiconductor substrate, wherein the first titanium layer has a first thickness less than 130 Å; a first titanium nitride layer over and contacting the first titanium layer; and an aluminum-containing layer over and contacting the first titanium nitride layer.

摘要翻译： 集成电路结构包括半导体衬底; 半导体衬底上的第一钛层，其中第一钛层具有小于130的第一厚度; 在第一钛层上方并与第一钛层接触的第一氮化钛层; 以及与第一氮化钛层接触的含铝层。

公开(公告)号：US20100247100A1

公开(公告)日：2010-09-30

申请号：US12464608

申请日：2009-05-12

申请人： Yu Min Lin ,  Dar Zu Hsu ,  Hung Lin Chen

发明人： Yu Min Lin ,  Dar Zu Hsu ,  Hung Lin Chen

IPC分类号： H04J14/02 ,  H04J11/00 ,  H03M1/12

CPC分类号： H04L27/2662 ,  H04L27/2672 ,  H04L27/2675 ,  H04L27/2697

摘要： A method for receiving an optical orthogonal frequency-division multiplexing (OFDM) signal and a receiver thereof are applicable to an optical OFDM system. The receiving method includes the following steps. An optical signal is converted into a digital signal. A symbol boundary of the digital signal is estimated. A guard interval of the digital signal is removed according to the symbol boundary, so as to generate an electrical signal. The electrical signal is converted into a plurality of frequency domain sub-carriers in a fast Fourier transform (FFT) manner. A timing offset is estimated with pilot carriers and frequency domain sub-carriers corresponding to the same symbol period. The estimated symbol boundary is compensated with the timing offset. Each frequency domain sub-carrier includes a plurality of pilot carrier signals. Through the receiving method, the timing offset arisen from chromatic dispersion of an optical fiber is effectively estimated and adopted for compensation.

摘要翻译： 用于接收光正交频分复用（OFDM）信号的方法及其接收机可应用于光OFDM系统。 接收方法包括以下步骤。 光信号被转换为数字信号。 估计数字信号的符号边界。 根据符号边界去除数字信号的保护间隔，以产生电信号。 电信号以快速傅立叶变换（FFT）方式转换成多个频域子载波。 使用对应于相同符号周期的导频载波和频域子载波来估计定时偏移。 估计的符号边界用定时偏移补偿。 每个频域子载波包括多个导频载波信号。 通过接收方式，可以有效地估计出采用光纤色散引起的定时偏移补偿。

公开(公告)号：US07585737B2

公开(公告)日：2009-09-08

申请号：US11607675

申请日：2006-11-30

申请人： Hung-Lin Chen ,  Shao-Yen Ku

发明人： Hung-Lin Chen ,  Shao-Yen Ku

IPC分类号： H01L21/336

CPC分类号： H01L29/66575 ,  H01L21/2652 ,  H01L21/266 ,  H01L21/823418 ,  H01L21/823462 ,  H01L29/7833

摘要： A method of manufacturing double diffused drains in a semiconductor device. An embodiment comprises forming a gate dielectric layer on a substrate, and masking and patterning the gate dielectric layer. Once the gate dielectric layer has been patterned, a second dielectric layer, having a different depth than the gate dielectric layer, is deposited into the pattern. Once the dielectric layers have been placed into a step form, DDDs are formed by implanting ions through the two dielectric layers, whose different filtering properties form the DDDS. In another embodiment the implantations through the two dielectric layers are performed using different energies to form the different dose regions. In yet another embodiment the implantations are performed using different species (light and heavy), instead of different energies, to form the different dose regions.

摘要翻译： 一种在半导体器件中制造双扩散漏极的方法。 一个实施例包括在衬底上形成栅极电介质层，并掩蔽和图案化栅极电介质层。 一旦对栅介质层进行了图案化，则将具有与栅极电介质层不同的深度的第二介电层沉积到图案中。 一旦电介质层已经被放置成台阶形式，通过将离子注入穿过两个不同的过滤特性形成DDDS的介电层形成DDD。 在另一个实施例中，通过两个介电层的注入是使用不同的能量来进行的，以形成不同的剂量区域。 在另一个实施方案中，使用不同种类（轻和重）代替不同的能量来进行植入以形成不同的剂量区域。

公开(公告)号：US20050236605A1

公开(公告)日：2005-10-27

申请号：US11112922

申请日：2005-04-22

申请人： Man-Kit Leung ,  Kuei-Hui Yang ,  Chi-Chih Liao ,  Hung-Lin Chen ,  Yung-Chih Lee ,  Yi-Meen Chou ,  Tzu-Chin Tang

发明人： Man-Kit Leung ,  Kuei-Hui Yang ,  Chi-Chih Liao ,  Hung-Lin Chen ,  Yung-Chih Lee ,  Yi-Meen Chou ,  Tzu-Chin Tang

IPC分类号： H01L51/00 ,  H01L51/30 ,  H01L51/40 ,  H01L51/50 ,  H01B1/00 ,  H05B33/14

CPC分类号： H01L51/007 ,  H01L51/002 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0077 ,  H01L51/0081 ,  H01L51/5052 ,  Y10S428/917

摘要： An organic light-emitting diode comprises an anode, an organic electroluminescent layer, a metal doped layer, and a cathode, in sequence, on a substrate; wherein the metal doped layer comprises an organic compound represented by the formula (1) doped with a metal.

公开(公告)号：US08669641B2

公开(公告)日：2014-03-11

申请号：US13164523

申请日：2011-06-20

申请人： Ming-Chang Hsieh ,  Hung-Lin Chen ,  Hsiu-Mei Yu ,  Chin Kun Lan ,  Dong-Lung Lee

发明人： Ming-Chang Hsieh ,  Hung-Lin Chen ,  Hsiu-Mei Yu ,  Chin Kun Lan ,  Dong-Lung Lee

IPC分类号： H01L21/78

CPC分类号： H01L23/585 ,  H01L21/78 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a method of making an integrated circuit (IC) device. The method includes forming a first IC feature and a second IC feature in a semiconductor substrate, the first and second IC features being spaced from each other and separated by a scribe region; forming, in the semiconductor substrate, a doped routing feature at least partially within the scribe region and configured to connect the first and second IC features; forming a multilayer interconnect (MLI) structure and an interlayer dielectric (ILD) on the semiconductor substrate, wherein the MLI is configured to be absent within the scribe region; and etching the ILD and the semiconductor substrate within the scribe region to form a scribe-line trench.

摘要翻译： 本公开提供了一种制造集成电路（IC）装置的方法。 该方法包括在半导体衬底中形成第一IC特征和第二IC特征，第一和第二IC特征彼此间隔开并由划线区分开; 在所述半导体衬底中至少部分地在所述划线区域内形成掺杂的布线特征并且被配置为连接所述第一和第二IC特征; 在所述半导体衬底上形成多层互连（MLI）结构和层间电介质（ILD），其中所述MLI被配置为在所述划线区域内不存在; 并且在刻划区域内蚀刻ILD和半导体衬底以形成划线沟槽。

公开(公告)号：US20100169402A1

公开(公告)日：2010-07-01

申请号：US12400794

申请日：2009-03-10

申请人： Hung-Lin Chen ,  Yu-Min Lin ,  Dar-Zu Hsu ,  Yuan Chen ,  Chen-Yi Lee

发明人： Hung-Lin Chen ,  Yu-Min Lin ,  Dar-Zu Hsu ,  Yuan Chen ,  Chen-Yi Lee

IPC分类号： G06F17/14

CPC分类号： G06F17/142

摘要： An FFT processor is disclosed, which includes a first multi-pipelined MDC unit, a second multi-pipelined MDC unit and a switching network. The first multi-pipelined MDC unit and the second multi-pipelined MDC unit respectively employ a plurality of MDC circuits to change the positions of the delayers thereof in parallel way. By changing the operation time sequence of the signals in the first multi-pipelined MDC unit and the second multi-pipelined MDC unit, the first multi-pipelined MDC unit is able to directly send the operation results to the second multi-pipelined MDC unit through the switching network.

摘要翻译： 公开了一种FFT处理器，其包括第一多流水线MDC单元，第二多流水线MDC单元和交换网络。 第一多流水线MDC单元和第二多流水线MDC单元分别采用多个MDC电路以并行方式改变其延迟器的位置。 通过改变第一多流水线MDC单元和第二多流水线MDC单元中的信号的操作时间顺序，第一多流水线MDC单元能够直接将操作结果发送到第二多流水线MDC单元 交换网络。