公开(公告)号：US08599181B2

公开(公告)日：2013-12-03

申请号：US13227455

申请日：2011-09-07

申请人： Yu-Min Lin ,  Hsin-Li Chen ,  Feng-Yuan Gan

发明人： Yu-Min Lin ,  Hsin-Li Chen ,  Feng-Yuan Gan

IPC分类号： G06F3/038

CPC分类号： H01L31/12 ,  G02F1/13338 ,  G02F2001/13312 ,  G06F3/0412 ,  G09G3/20 ,  G09G2300/0408 ,  G09G2360/144 ,  H01L31/145 ,  H01L31/18

摘要： A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.

摘要翻译： 公开了一种光电检测器。 光检测器包括衬底，第一图案化半导体层，电介质层，图案化导电层，层间电介质，第二图案化半导体层，设置在层间电介质上的两个第一电极和设置在层间电介质上的两个第二电极 第二半导体层的部分。 具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在晶体管区域上。 介电层设置成覆盖基板和第一半导体层，图案化的导电层设置在电介质层上，并且具有适于暴露第一掺杂区域和第二掺杂区域的至少两个开口的层间电介质是 被设置成覆盖电介质层。 第二图案化半导体层设置在光敏区域上，并且第一电极电连接到第一图案化半导体层。

公开(公告)号：US08415795B2

公开(公告)日：2013-04-09

申请号：US13089289

申请日：2011-04-18

申请人： Yu-Min Lin ,  Chau-Jie Zhan ,  Su-Tsai Lu

发明人： Yu-Min Lin ,  Chau-Jie Zhan ,  Su-Tsai Lu

IPC分类号： H01L21/44 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/17 ,  H01L21/563 ,  H01L23/345 ,  H01L24/14 ,  H01L24/16 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/14131 ,  H01L2224/14505 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16507 ,  H01L2224/17505 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81224 ,  H01L2224/81234 ,  H01L2224/8181 ,  H01L2224/81815 ,  H01L2224/81948 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/00013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/32225

摘要： A semiconductor device and an assembling method thereof are provided. The semiconductor device includes a chip, a carrier, a plurality of first conductive elements and a plurality of second conductive elements. The chip has a plurality of first pads. The carrier has a plurality of second pads. The second pads correspond to the first pads. Each first conductive element is disposed between one of the first pads and one of the second pads. Each second conductive element is disposed between one of the first pads and one of the second pads. A volume ratio of intermetallic compound of the second conductive elements is greater than a volume ratio of intermetallic compound of the first conductive elements.

摘要翻译： 提供了一种半导体器件及其组装方法。 半导体器件包括芯片，载体，多个第一导电元件和多个第二导电元件。 芯片具有多个第一焊盘。 载体具有多个第二垫。 第二垫对应于第一垫。 每个第一导电元件设置在第一焊盘之一和第二焊盘中的一个之间。 每个第二导电元件设置在第一焊盘之一和第二焊盘中的一个之间。 第二导电元件的金属间化合物的体积比大于第一导电元件的金属间化合物的体积比。

公开(公告)号：US20120326238A1

公开(公告)日：2012-12-27

申请号：US13167738

申请日：2011-06-24

申请人： Chin-Cheng Chien ,  Tzung-Ying Lee ,  Tsuo-Wen Lu ,  Shu-Yen Chan ,  Jei-Ming Chen ,  Yu-Min Lin ,  Chun-Wei Hsu

发明人： Chin-Cheng Chien ,  Tzung-Ying Lee ,  Tsuo-Wen Lu ,  Shu-Yen Chan ,  Jei-Ming Chen ,  Yu-Min Lin ,  Chun-Wei Hsu

IPC分类号： H01L27/092 ,  H01L21/28 ,  H01L21/8238

CPC分类号： H01L29/7833 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

摘要： A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region thereon; forming a high-k dielectric layer, a barrier layer, and a first metal layer on the substrate; removing the first metal layer of the second region; forming a polysilicon layer to cover the first metal layer of the first region and the barrier layer of the second region; patterning the polysilicon layer, the first metal layer, the barrier layer, and the high-k dielectric layer to form a first gate structure and a second gate structure in the first region and the second region; and forming a source/drain in the substrate adjacent to two sides of the first gate structure and the second gate structure.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：提供其上具有第一区域和第二区域的衬底; 在基板上形成高k电介质层，阻挡层和第一金属层; 去除第二区域的第一金属层; 形成多晶硅层以覆盖第一区域的第一金属层和第二区域的阻挡层; 图案化多晶硅层，第一金属层，势垒层和高k电介质层，以在第一区域和第二区域中形成第一栅极结构和第二栅极结构; 以及在所述衬底中邻近所述第一栅极结构和所述第二栅极结构的两侧形成源极/漏极。

公开(公告)号：US20120321108A1

公开(公告)日：2012-12-20

申请号：US13592342

申请日：2012-08-23

申请人： Yu-Min Lin ,  Chang-Ho Liou ,  Yu-Wei Huang ,  Ming-Daw Chen ,  Rong-Shen Lee

发明人： Yu-Min Lin ,  Chang-Ho Liou ,  Yu-Wei Huang ,  Ming-Daw Chen ,  Rong-Shen Lee

IPC分类号： H04R1/00

CPC分类号： H04R1/06

摘要： An electrode connection structure of a speaker unit is provided. The speaker unit includes at least one electrode layer, which is made of a conductive material, or made of a non-conductive material with a conductive layer formed on a surface thereof. The electrode connection structure includes a conductive electrode and an adhesive material. The conductive electrode is used for providing power supply signals for the speaker unit to generate sounds. The adhesive material adheres the conductive electrode in parallel with a surface of the electrode layer. The adhesive material has adhesive characteristics, so as to electrically connect the conductive electrode and the electrode layer, in which the adhesive material is adhered to a side of the surface of the electrode layer closely adjacent to the conductive electrode with a certain area.

摘要翻译： 提供扬声器单元的电极连接结构。 扬声器单元包括至少一个电极层，该电极层由导电材料制成，或由其表面上形成有导电层的非导电材料制成。 电极连接结构包括导电电极和粘合材料。 导电电极用于为扬声器单元提供电源信号以产生声音。 粘合剂材料将导电电极与电极层的表面平行地粘合。 粘合剂材料具有粘合特性，以便以一定面积将导电电极和电极层电连接，其中粘合剂材料粘附到与导电电极紧密相邻的电极层的表面的一侧。

公开(公告)号：US20120228618A1

公开(公告)日：2012-09-13

申请号：US13449464

申请日：2012-04-18

申请人： Yu-Min Lin ,  Feng-Yuan Gan

发明人： Yu-Min Lin ,  Feng-Yuan Gan

IPC分类号： H01L33/16

CPC分类号： H01L29/41733 ,  H01L27/12 ,  H01L27/124 ,  H01L29/42384

摘要： A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT.

摘要翻译： 提供薄膜晶体管（TFT）结构。 TFT包括栅极，第一电极，第二电极，电介质层和沟道层。 通过重叠第一电极和栅极之间的区域，TFT结构获得不受制造偏差影响的寄生电容器。 因此，TFT不需要补偿电容器，从而增加TFT的开口​​率。

公开(公告)号：US08244132B2

公开(公告)日：2012-08-14

申请号：US12501677

申请日：2009-07-13

申请人： Yu-Min Lin

发明人： Yu-Min Lin

IPC分类号： H04J14/02 ,  H04K1/10 ,  H04L27/28

CPC分类号： H04L25/03343 ,  H04B10/2513 ,  H04B10/548 ,  H04L27/2605 ,  H04L2025/03414 ,  H04L2025/03802

摘要： A pre-compensation method for delays caused by optical fiber chromatic dispersion, a multi-sub-carrier signal generator applying the method, and a transmitter applying the signal generator are applicable to an optical orthogonal frequency-division multiplexing (OFDM) system. The pre-compensation method includes receiving a plurality of pre-compensation values, in which the pre-compensation values correspond to sub-carriers; and transmitting the sub-carriers after delaying the sub-carriers by time of the corresponding pre-compensation values. The delay time between the sub-carriers is estimated at a receiver end and a pre-compensation value of the transmitter is set according to the delay time. The transmitter delays the pre-compensation values respectively when transmitting the respective sub-carriers. Therefore, the respective sub-carriers are able to reach a receiver at nearly the same time, thereby achieving a purpose of pre-compensating for the delays caused by optical fiber chromatic dispersion.

摘要翻译： 由光纤色散引起的延迟的预补偿方法，应用该方法的多子载波信号发生器和施加信号发生器的发射机可应用于光正交频分复用（OFDM）系统。 预补偿方法包括接收多个预补偿值，其中预补偿值对应于子载波; 以及在相应的预补偿值的时间延迟子载波之后发送子载波。 在接收端估计子载波之间的延迟时间，并根据延迟时间设置发射机的预补偿值。 当发射各个子载波时，发射机分别延迟预补偿值。 因此，各子载波能够在几乎相同的时间到达接收机，从而达到对由光纤色散引起的延迟进行预补偿的目的。

公开(公告)号：US08233795B2

公开(公告)日：2012-07-31

申请号：US12344230

申请日：2008-12-25

申请人： Shi-Wei Lee ,  Yu-Min Lin ,  Maria C. Yuang ,  I-Fen Chao ,  Bird C. Lo

发明人： Shi-Wei Lee ,  Yu-Min Lin ,  Maria C. Yuang ,  I-Fen Chao ,  Bird C. Lo

IPC分类号： H04J14/00

CPC分类号： H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252 ,  H04J14/0254 ,  H04J14/0267 ,  H04J14/0275 ,  H04J14/0283 ,  H04Q11/0062 ,  H04Q2011/0064 ,  H04Q2011/0069 ,  H04Q2011/0092

摘要： Disclosed is an apparatus and method for medium access control (MAC) in an optical packet-switched network. The MAC apparatus may comprise a bandwidth allocation module and an MAC processor. The bandwidth allocation module determines a data transmission limit based on a probabilistic quota plus credit mechanism for each node of the network, dynamically informs all downstream nodes of unused quota and allows the downstream nodes to use remaining bandwidths of the upstream node. Through a control message carried by a control channel, the MAC processor determines uploading, downloading and data erasing for a plurality of data channels, and updates the corresponding contents in the control message.

摘要翻译： 公开了一种用于光分组交换网络中的媒体接入控制（MAC）的装置和方法。 MAC设备可以包括带宽分配模块和MAC处理器。 带宽分配模块基于网络的每个节点的概率配额加信用机制来确定数据传输限制，动态地通知所有下游节点未使用的配额，并允许下游节点使用上游节点的剩余带宽。 通过控制信道携带的控制消息，MAC处理器确定多个数据信道的上载，下载和数据擦除，并更新控制消息中的相应内容。

公开(公告)号：US08184226B2

公开(公告)日：2012-05-22

申请号：US11849593

申请日：2007-09-04

申请人： Yu-Min Lin ,  Feng-Yuan Gan

发明人： Yu-Min Lin ,  Feng-Yuan Gan

IPC分类号： G02F1/136 ,  H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L29/41733 ,  H01L27/12 ,  H01L27/124 ,  H01L29/42384

摘要： A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT.

摘要翻译： 提供薄膜晶体管（TFT）结构。 TFT包括栅极，第一电极，第二电极，电介质层和沟道层。 通过重叠第一电极和栅极之间的区域，TFT结构获得不受制造偏差影响的寄生电容器。 因此，TFT不需要补偿电容器，从而增加TFT的开口​​率。

公开(公告)号：US08054304B2

公开(公告)日：2011-11-08

申请号：US11943602

申请日：2007-11-21

申请人： Yu-Min Lin ,  Hsin-Li Chen ,  Feng-Yuan Gan

发明人： Yu-Min Lin ,  Hsin-Li Chen ,  Feng-Yuan Gan

IPC分类号： G06F3/038 ,  G09G5/00

CPC分类号： H01L31/12 ,  G02F1/13338 ,  G02F2001/13312 ,  G06F3/0412 ,  G09G3/20 ,  G09G2300/0408 ,  G09G2360/144 ,  H01L31/145 ,  H01L31/18

摘要： A photo detector is disclosed. The photo detector includes a substrate, a first patterned semiconductor layer with a first state, a dielectric layer, a patterned conductive layer, an inter-layer dielectric, a second patterned semiconductor layer with a second state, two first electrodes disposed on the inter-layer dielectric and two second electrodes disposed on portions of the second semiconductor layer. The first patterned semiconductor layer having a first doping region and a second doping region is disposed on a transistor region of the substrate. The dielectric layer is disposed to cover the substrate and the first semiconductor layer, the patterned conductive layer is disposed on the dielectric layer, and the inter-layer dielectric having at least two openings adapted to expose the first doping region and the second doping region is disposed to cover the dielectric layer. The second patterned semiconductor layer is disposed on a photosensitive region and the first electrodes are electrically connected to the first patterned semiconductor layer.

摘要翻译： 公开了一种光电检测器。 光检测器包括基板，具有第一状态的第一图案化半导体层，电介质层，图案化导电层，层间电介质，具有第二状态的第二图案化半导体层，设置在第二状态的第二图案化半导体层， 层电介质和设置在第二半导体层的部分上的两个第二电极。 具有第一掺杂区域和第二掺杂区域的第一图案化半导体层设置在衬底的晶体管区域上。 介电层设置成覆盖基板和第一半导体层，图案化的导电层设置在电介质层上，并且具有适于暴露第一掺杂区和第二掺杂区的至少两个开口的层间电介质是 被设置成覆盖电介质层。 第二图案化半导体层设置在光敏区域上，并且第一电极电连接到第一图案化半导体层。

公开(公告)号：US20110168360A1

公开(公告)日：2011-07-14

申请号：US12710299

申请日：2010-02-22

申请人： Shyy-Woei Chang ,  Kuei-Feng Chiang ,  Yu-Min Lin

发明人： Shyy-Woei Chang ,  Kuei-Feng Chiang ,  Yu-Min Lin

IPC分类号： F28D15/00 ,  F28F3/02 ,  F28F7/00

CPC分类号： F28F3/12 ,  F28D9/04 ,  F28F3/048 ,  F28F13/12 ,  H01L23/473 ,  H01L2924/0002 ,  H01L2924/00

摘要： A heat exchanger includes a body having a center and a spiral guiding trough extending spirally and outwardly from the center toward an outside of the center. The radius of the spiral guiding trough increases gradually from the center toward the outside of the center. A first port and a second port are in communication with the spiral guiding trough respectively. With the combination of the spiral guiding trough and the body, the fluid can be sufficiently mixed in the spiral guiding trough, thereby achieving an excellent thermal-conducting effect.

摘要翻译： 热交换器包括具有中心的主体和从中心向中心向外延伸的螺旋形引导槽。 螺旋导向槽的半径从中心朝向中心的外侧逐渐增加。 第一端口和第二端口分别与螺旋导向槽连通。 通过螺旋导向槽与机身的组合，可以在螺旋导向槽中充分混合流体，从而实现优良的导热效果。