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20 条记录 (耗时 0.011 秒)

    Method for producing hydrogen using block copolymer and oxidation reaction of metals
    1.
    发明授权
    Method for producing hydrogen using block copolymer and oxidation reaction of metals 有权
    使用嵌段共聚物生产氢的方法和金属的氧化反应

    公开(公告)号：US08580227B2

    公开(公告)日：2013-11-12

    申请号：US12740010

    申请日：2008-06-17

    申请人： Jeung-Ku Kang ,  Weon-Ho Shin ,  Jun-Hyeon Bae ,  Jung-Hoon Choi ,  Cheol-Ock Song ,  Kyung-Min Choi

    发明人： Jeung-Ku Kang ,  Weon-Ho Shin ,  Jun-Hyeon Bae ,  Jung-Hoon Choi ,  Cheol-Ock Song ,  Kyung-Min Choi

    IPC分类号： C01B3/08

    CPC分类号： C01B3/08 ,  Y02E60/36

    摘要： The present inventions are a method for production of hydrogen which decomposes water into hydrogen by oxidation of metals only when the metals are exposed to the water, while preventing oxidation of pure metal nanoparticles using block copolymers and, in addition, hydrogen produced by the method described above. The method of the present invention has advantages of improved convenience and simplicity, achieves a preferable approach for hydrogen storage because the metal nanoparticles enclosed by the block copolymer have the ease of delivery and reaction thereof. Additionally, the method of the present invention only using water and the metal is considered eco-friendly and useful in industrial energy applications.

    摘要翻译： 本发明是一种生产氢的方法，其仅在金属暴露于水中时才将金属氧化分解成氢，同时使用嵌段共聚物防止纯金属纳米粒子的氧化，另外，通过所述方法产生的氢 以上。 本发明的方法具有改进的便利性和简便性的优点，因为由嵌段共聚物包围的金属纳米颗粒具有容易的输送和反应，因此实现了氢存储的优选方法。 此外，本发明仅使用水和金属的方法被认为是环境友好的并且在工业能量应用中是有用的。

    Method for Producing Hydrogen Using Block Copolymer and Oxidation Reaction of Metals
    3.
    发明申请
    Method for Producing Hydrogen Using Block Copolymer and Oxidation Reaction of Metals 有权
    使用嵌段共聚物生产氢气的方法和金属的氧化反应

    公开(公告)号：US20100239494A1

    公开(公告)日：2010-09-23

    申请号：US12740010

    申请日：2008-06-17

    申请人： Jeung-Ku Kang ,  Weon-Ho Shin ,  Jun-Hyeon Bae ,  Jung-Hoon Choi ,  Cheol-Ock Song ,  Kyung-Min Choi

    发明人： Jeung-Ku Kang ,  Weon-Ho Shin ,  Jun-Hyeon Bae ,  Jung-Hoon Choi ,  Cheol-Ock Song ,  Kyung-Min Choi

    IPC分类号： C01B3/08

    CPC分类号： C01B3/08 ,  Y02E60/36

    摘要： The present inventions are a method for production of hydrogen which decomposes water into hydrogen by oxidation of metals only when the metals are exposed to the water, while preventing oxidation of pure metal nanoparticles using block copolymers and, in addition, hydrogen produced by the method described above. The method of the present invention has advantages of improved convenience and simplicity, achieves a preferable approach for hydrogen storage because the metal nanoparticles enclosed by the block copolymer have the ease of delivery and reaction thereof. Additionally, the method of the present invention only using water and the metal is considered eco-friendly and useful in industrial energy applications.

    摘要翻译： 本发明是一种生产氢的方法，其仅在金属暴露于水中时才将金属氧化分解成氢，同时使用嵌段共聚物防止纯金属纳米粒子的氧化，另外，通过所述方法产生的氢 以上。 本发明的方法具有改进的便利性和简便性的优点，因为由嵌段共聚物包围的金属纳米颗粒具有容易的输送和反应，因此实现了氢存储的优选方法。 此外，本发明仅使用水和金属的方法被认为是环境友好的并且在工业能量应用中是有用的。

    Software testing device and method, and computer readable recording medium for recording program executing software testing
    5.
    发明申请
    Software testing device and method, and computer readable recording medium for recording program executing software testing 审中-公开
    软件测试装置和方法，以及用于记录程序执行软件测试的计算机可读记录介质

    公开(公告)号：US20070050676A1

    公开(公告)日：2007-03-01

    申请号：US11209650

    申请日：2005-08-24

    申请人： Hyeon Bae

    发明人： Hyeon Bae

    IPC分类号： G06F11/00

    CPC分类号： G06F11/3688

    摘要： A software testing device and method is provided. The software testing device includes: a test script unit for outputting its holding test script when a test execution signal is inputted; a test data creating unit for selecting at least one test data from at least one predetermined test data set and creating test data, and combining the created test data to the test script; and a test execution unit for receiving the test data from the test data creating unit, and executing test by the test script combined with the received test data.

    摘要翻译： 提供了软件测试设备和方法。 软件测试装置包括：测试脚本单元，用于在输入测试执行信号时输出其保持测试脚本; 测试数据创建单元，用于从至少一个预定测试数据集中选择至少一个测试数据并创建测试数据，并将创建的测试数据与测试脚本相组合; 以及测试执行单元，用于从测试数据创建单元接收测试数据，并且与所接收的测试数据相结合执行测试脚本的测试。

    MICRO-CRYSTALLINE THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF
    6.
    发明申请
    MICRO-CRYSTALLINE THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF 审中-公开
    微晶薄膜晶体管，包括其的显示装置及其制造方法

    公开(公告)号：US20120146042A1

    公开(公告)日：2012-06-14

    申请号：US13269348

    申请日：2011-10-07

    申请人： Ki-Tae KIM ,  Sung-Ki Kim ,  Hong-Koo Lee ,  Jun-Hyeon Bae

    发明人： Ki-Tae KIM ,  Sung-Ki Kim ,  Hong-Koo Lee ,  Jun-Hyeon Bae

    IPC分类号： H01L33/08

    CPC分类号： H01L27/1288 ,  H01L21/268 ,  H01L27/124 ,  H01L29/04 ,  H01L29/41733

    摘要： A display device includes: a substrate; gate and data lines crossing each other on the substrate to define a pixel region; a thin film transistor that is connected to the gate and data lines, and includes a gate electrode, an active layer made of micro-crystalline silicon, and source and drain electrodes which are sequentially formed; a passivation layer on the thin film transistor; and a first electrode in the pixel region on the passivation layer and connected to the drain electrode, wherein a first overlap width between the drain electrode and the gate electrode is less than a second overlap width between the source electrode and the gate electrode.

    摘要翻译： 显示装置包括：基板; 栅极和数据线在衬底上彼此交叉以限定像素区域; 连接到栅极和数据线的薄膜晶体管，并且包括栅电极，由微晶硅制成的有源层，以及依次形成的源极和漏极; 薄膜晶体管上的钝化层; 以及钝化层上的像素区域中的第一电极，并连接到漏电极，其中漏电极和栅电极之间的第一重叠宽度小于源电极和栅电极之间的第二重叠宽度。

    METHOD AND SYSTEM FOR ETCHING A SILICON DIOXIDE FILM USING DENSIFIED CARBON DIOXIDE
    7.
    发明申请
    METHOD AND SYSTEM FOR ETCHING A SILICON DIOXIDE FILM USING DENSIFIED CARBON DIOXIDE 审中-公开
    使用二氧化碳浸渍二氧化硅薄膜的方法和系统

    公开(公告)号：US20110117752A1

    公开(公告)日：2011-05-19

    申请号：US12621140

    申请日：2009-11-18

    申请人： Kwon Taek Lim ,  Jae Hyeon Bae

    发明人： Kwon Taek Lim ,  Jae Hyeon Bae

    IPC分类号： H01L21/306

    CPC分类号： H01L21/31111 ,  H01L21/31116

    摘要： The present invention relates to a method and system for removing a sacrificial layer from an MEMS structure or from any other semiconductor substrate that includes a sacrificial layer. The above etching method and system use densified carbon dioxide, fluorine compounds, and co-solvents as the processing fluid and are capable of removing the sacrificial layer in a short period of time without incurring damage on the structural layer or incurring stiction between structures. In addition, the above etching method and system do not create etching residue and thus do not require a separate cleaning process.

    摘要翻译： 本发明涉及从MEMS结构或包括牺牲层的任何其它半导体衬底去除牺牲层的方法和系统。 上述蚀刻方法和系统使用致密化的二氧化碳，氟化合物和助溶剂作为处理流体，并且能够在短时间内去除牺牲层，而不会对结构层造成损害或引起结构之间的粘连。 此外，上述蚀刻方法和系统不产生蚀刻残留物，因此不需要单独的清洁工艺。