Process for preparing a non-conductive substrate for electroplating
    1.
    发明申请
    Process for preparing a non-conductive substrate for electroplating 有权
    制备用于电镀的非导电基底的方法

    公开(公告)号:US20050199504A1

    公开(公告)日:2005-09-15

    申请号:US10798522

    申请日:2004-03-11

    Applicant: Hyunjung Lee

    Inventor: Hyunjung Lee

    CPC classification number: C25D5/54 H05K3/423 H05K3/427 H05K2201/0323

    Abstract: A composition and process for electroplating a conductive metal layer onto the surface of a non-conductive material is disclosed. The composition and process utilizes an obvious dispersion traditional carbon black particles and highly conductive carbon black particles. The mixture of carbon blacks provides optimum dispersion and electroplating properties.

    Abstract translation: 公开了一种用于将导电金属层电镀到非导电材料的表面上的组合物和工艺。 该组合物和方法利用了明显的分散体传统的炭黑颗粒和高导电性炭黑颗粒。 炭黑混合物提供最佳的分散性和电镀性能。

    SYSTEM AND METHOD FOR CORRECTING QUERY BASED ON STATISTICAL DATA
    2.
    发明申请
    SYSTEM AND METHOD FOR CORRECTING QUERY BASED ON STATISTICAL DATA 审中-公开
    基于统计数据校正查询的系统和方法

    公开(公告)号:US20110016075A1

    公开(公告)日:2011-01-20

    申请号:US12837066

    申请日:2010-07-15

    CPC classification number: G06F16/3329

    Abstract: A system for correcting a query includes a wrong query determination unit to determine whether an inputted query is a wrong query, a per-whole-query correction unit configured to correct the query on a per-whole-query basis, and a per-word correction unit to correct the user query on a per-word basis. A method for correcting a query includes determining whether a query is a wrong query, correcting the query on a per-whole-query basis, and correcting the query on a per-word basis.

    Abstract translation: 用于校正查询的系统包括错误的查询确定单元,用于确定输入的查询是否是错误的查询,每个整体查询校正单元被配置为基于每个整体查询来校正查询,以及每个单词 校正单元以每个单词为基础来校正用户查询。 用于校正查询的方法包括确定查询是否是错误的查询,基于每个整体查询来校正查询,以及基于每个单词来校正查询。

    SYSTEM AND METHOD FOR TRANSFORMING VERNACULAR PRONUNCIATION
    3.
    发明申请
    SYSTEM AND METHOD FOR TRANSFORMING VERNACULAR PRONUNCIATION 审中-公开
    用于变换VERNACULAR PRONUNCIATION的系统和方法

    公开(公告)号:US20110010178A1

    公开(公告)日:2011-01-13

    申请号:US12831607

    申请日:2010-07-07

    CPC classification number: G06F17/2223 G06F16/3337 G06F17/2264 G06F17/2863

    Abstract: Provided is a system and method for transforming vernacular pronunciation with respect to Hanja using a statistical method. In a system for transforming vernacular pronunciation, a vernacular pronunciation extracting unit extracts a vernacular pronunciation with respect to a Hanja character string, a statistical data determining unit determines a statistical data with respect to the Hanja character string by using statistical data of features related to a Hanja-vernacular pronunciation transformation, and a vernacular pronunciation transforming unit transforms the Hanja character string into a vernacular pronunciation using the extracted vernacular pronunciation and the determined statistical data.

    Abstract translation: 提供了一种使用统计学方法来改变汉族汉语发音的系统和方法。 在本土语音发音系统中,本土语音提取单元相对于汉字字符串提取本土语发音,统计数据确定单元通过使用与汉字字符串相关的特征的统计数据来确定汉字字符串的统计数据 汉族语言发音变换,以及一个白话发音变换单元,使用提取的语言发音和确定的统计数据将汉字字符串转换为语言发音。

    Process for preparing a non-conductive substrate for electroplating
    4.
    发明授权
    Process for preparing a non-conductive substrate for electroplating 有权
    制备用于电镀的非导电基底的方法

    公开(公告)号:US07214304B2

    公开(公告)日:2007-05-08

    申请号:US10964212

    申请日:2004-10-13

    Abstract: A process for preparing a non-conductive substrate for electroplating is proposed. The proposed process comprises contacting the substrate, after desmear, with a combined neutralization/sacrificial coating solution followed by treatment with a carbon dispersion solution. The combined neutralization/sacrificial coating solution neutralizes permanganate residues from the desmear step and applies a sacrificial coating to metallic surfaces on the substrate. The sacrificial coating allows for easy and reliable removal of unwanted carbon residues from the metallic surfaces prior to electroplating.

    Abstract translation: 提出了制备用于电镀的非导电衬底的方法。 所提出的方法包括在脱胶后将基底与组合的中和/牺牲涂层溶液接触,然后用碳分散液处理。 组合的中和/牺牲涂层溶液中和去污步骤中的高锰酸盐残留物,并在基材上的金属表面施加牺牲涂层。 牺牲涂层允许在电镀之前从金属表面容易且可靠地去除不需要的碳残余物。

    Mobile terminal and group generating method therein
    5.
    发明授权
    Mobile terminal and group generating method therein 有权
    移动终端和组生成方法

    公开(公告)号:US09195882B2

    公开(公告)日:2015-11-24

    申请号:US13081802

    申请日:2011-04-07

    Abstract: A mobile terminal and group generating method therein are disclosed, by which a group can be generated using at least one character object included in an image currently displayed. The present invention includes displaying at least one image including at least one character object, performing a face recognition process based on the image for recognizing at least one character object on the image, identifying a counterpart corresponding to the recognized character object and generating a group comprising at least one identified counterpart according to a selection input by a user.

    Abstract translation: 公开了一种移动终端和组生成方法,通过该移动终端和组生成方法,可以使用包括在当前显示的图像中的至少一个字符对象来生成组。 本发明包括显示包括至少一个字符对象的至少一个图像,基于用于识别图像上的至少一个字符对象的图像来执行面部识别处理,识别与所识别的字符对象相对应的对应物,并且生成包括 至少一个识别的对应物根据用户的选择输入。

    SEMICONDUCTOR DEVICE HAVING FIN ACTIVE REGIONS AND METHOD OF FABRICATING THE SAME
    7.
    发明申请
    SEMICONDUCTOR DEVICE HAVING FIN ACTIVE REGIONS AND METHOD OF FABRICATING THE SAME 有权
    具有精细活性区域的半导体器件及其制造方法

    公开(公告)号:US20160315081A1

    公开(公告)日:2016-10-27

    申请号:US15013969

    申请日:2016-02-02

    Abstract: A semiconductor device may include fin active regions extending parallel to each other on a substrate, an isolation region between the fin active regions, gate patterns intersecting the fin active regions and extending parallel to each other, source/drain areas on the fin active regions between the gate patterns and fin active region spacers contacting side surfaces of the fin active regions and formed over a surface of the isolation region between the fin active regions. Uppermost levels of the fin active region spacers may be higher than interfaces between the fin active regions and the source/drain areas. The upper surface of the isolation region may be lower than bottom surfaces of the source/drain areas.

    Abstract translation: 半导体器件可以包括在衬底上彼此平行延伸的翅片有源区域,翅片有源区域之间的隔离区域,与翅片有源区域相交并且彼此平行延伸的栅极图案,翅片有源区域之间的源极/漏极区域在 所述栅极图案和鳍状有源区间隔物接触所述翅片有源区域的侧表面并形成在所述鳍片活动区域之间的所述隔离区域的表面上。 翅片有源区间隔物的最上层可以高于翅片有源区和源极/漏极区之间的界面。 隔离区域的上表面可以低于源/漏区域的底表面。

    SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING SILICON CARBON
    10.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING SILICON CARBON 有权
    半导体器件,其中包括有机硅碳源

    公开(公告)号:US20160315160A1

    公开(公告)日:2016-10-27

    申请号:US15002379

    申请日:2016-01-20

    CPC classification number: H01L29/41791 H01L29/785

    Abstract: Provided is a semiconductor device. In some examples, the semiconductor device includes an fin active region protruding from a substrate, gate patterns disposed on the fin active region, a source/drain region disposed on the fin active region between the gate patterns, and contact patterns disposed on the source/drain region. The source/drain region may have a protruding middle section, which may form a wave-shaped upper surface of the source/drain region.

    Abstract translation: 提供一种半导体器件。 在一些示例中,半导体器件包括从基板突出的鳍状有源区域,设置在鳍状有源区域上的栅极图案,设置在栅极图案之间的鳍状有源区域上的源极/漏极区域和设置在源极/ 漏区。 源极/漏极区域可以具有突出的中间部分,其可以形成源极/漏极区域的波状上表面。

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