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公开(公告)号：US20240304413A1
公开(公告)日：2024-09-12
申请号：US18597676
申请日：2024-03-06
IPC分类号： H01J37/304 , H01J37/04 , H01J37/153 , H01J37/22 , H01J37/302 , H01J37/317
CPC分类号： H01J37/304 , H01J37/045 , H01J37/153 , H01J37/222 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/31777
摘要： The invention proposes adjusting the optical imaging system of a charged-particle multi-beam processing apparatus with regard to spatial and angular image distortion of the beam field, which describes the deviation of landing positions and landing angles of beamlets from respective nominal values within the beam field. Starting from a determination of the image distortion, so-called fingerprints are determined, which represent the change of image distortion effected by a unit change of a respective operating parameter of a component of the projection optics; then values of operating parameters are obtained which optimize a corrected distortion obtained from a superposition of the image distortion and a change of operating parameters that causes a variation of the image distortion, as expressed by a linear combination of said fingerprints. The optimizing values thus obtained are applied to the respective optical elements of the projection optics. The procedure may suitable be iterated until the distortion is suitably optimized.
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公开(公告)号：US20230296989A1
公开(公告)日：2023-09-21
申请号：US18185280
申请日：2023-03-16
IPC分类号： G03F7/20
CPC分类号： G03F7/7055 , G03F7/70891
摘要： A pattern writing method for charged-particle lithography apparatuses using an improved correction for thermal distortion of the substrate includes determining an exposure position where the beam impinges on the substrate and the power of the beam at the exposure position; calculating heating of the substrate at the exposure position, and calculating, for a plurality of locations over the substrate, and the thermal diffusion and radiative cooling; calculating, for the same or a reduced plurality of locations on the substrate, the positional change of the substrate due to thermal expansion; determining a displacement distance which compensates the positional change at the exposure position, updating the structure to be written by shifting the exposure position of the beam by said displacement distance, and writing the updated structures on the substrate with the beam. These steps are repeated as a function of time and/or varying exposure position of the beam substrate position.
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公开(公告)号：US20220384143A1
公开(公告)日：2022-12-01
申请号：US17664812
申请日：2022-05-24
IPC分类号： H01J37/317 , H01J37/147 , H01J37/30 , H01J37/302
摘要： In a writing process in a charged-particle multi-beam apparatus, a desired pattern is written onto a target wherein said desired pattern is provided as input pattern data (INPDAT) in a vector format and processed through a pattern data processing flow. A data preprocessing system receives the input pattern data (INPDAT) and preprocesses the input pattern data independently of the writing process, preferably in advance to it, using writing parameter data provided to the data preprocessing system, and writes the intermediate pattern data (IMDAT) thus obtained to a data storage. When a writing process is carried out using the apparatus, its writing control system reads the intermediate pattern data from the data storage, converts them into pattern streaming data (SBUF), and streams the pattern streaming data to the apparatus for writing the pattern to the target.
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公开(公告)号：US20190214226A1
公开(公告)日：2019-07-11
申请号：US16239061
申请日：2019-01-03
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3026 , H01J37/3174
摘要： In a rasterized exposure method, in order to correct for a non-linear relationship between the position of a feature edge (dCD) of a pattern element boundary and the nominal position of the boundary as expressed through the dose of exposure (d) of the edge pixel, a position correction for edge positions is employed. The position correction includes: determining a position value describing said edge position, determining a corrected position value based on the position value using a predefined non-linear function, and modifying the pattern to effectively shift the pattern element boundary in accordance with the corrected position value. The non-linear function describes the inverse of the relationship between a nominal position value (d), which is used as input value during exposure of the pattern, and a resulting position (dCD) of the pattern element boundary generated when exposed with said nominal position value.
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5.发明申请公开(公告)号：US20190066976A1
公开(公告)日：2019-02-28
申请号：US16105699
申请日：2018-08-20
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3026 , H01J37/3177 , H01J2237/24507 , H01J2237/31764 , H01J2237/31774
摘要： A method for re-calculating a pattern to be exposed on a target by means of a charged-particle multi-beam writing apparatus is presented. The pattern elements of a pattern, initially associated with a respective assigned dose, are recalculated in view of obtaining reshaped pattern elements which have a nominal dose as assigned dose. The nominal dose represents a predefined standard value of exposure dose to be exposed for pixels during a scanning stripe exposure within the multi-beam apparatus. For the pattern elements associated with an assigned dose deviating from the nominal dose, the pattern element is reshaped by determining a reshape distance from the value of the assigned dose using a predefined dose slope function forming a reshaped pattern element, whose boundary is offset with regard to boundary of the initial pattern element by an offset distance equaling said reshape distance, assigning the nominal dose to the reshaped pattern element, and replacing the pattern element by the reshaped pattern element.
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6.发明公开公开(公告)号：US20240304415A1
公开(公告)日：2024-09-12
申请号：US18596458
申请日：2024-03-05
IPC分类号： H01J37/317 , H01J37/153
CPC分类号： H01J37/3177 , H01J37/153 , H01J2237/0435 , H01J2237/1516 , H01J2237/1532
摘要： A method for determining focal properties in a target beam field of a charged-particle multi-beam processing apparatus is presented, where the focal properties relate to aperture images formed by the beamlets at or near the target within this apparatus, such as height of focus, astigmatic length, or size of blur. By modifying an electrostatic voltage of a lens or another suitable operating parameter of the projection optics, the landing angles of the beamlets are tilted by a small tilting angle, causing a small displacement of the positions where the beamlets hit the target surface. Using the amounts of displacement and the change of landing angles a map is generated that describes a mapping from the change of landing angles to the amounts of displacement as a function of the position, for instance by using a best fit to a predefined model; this map is then used to extract the focal properties, which in turn can be used to correct for imaging errors in the processing apparatus.
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公开(公告)号：US20230360878A1
公开(公告)日：2023-11-09
申请号：US18313995
申请日：2023-05-08
发明人： Dietmar Puchberger , Johannes Leitner , Patrick Mayrhofer , Christoph Spengler , Elmar Platzgummer
IPC分类号： H01J37/317 , H01J37/141 , H01J37/143 , G03F7/20
CPC分类号： H01J37/143 , G03F7/7015 , G03F7/704 , H01J37/141 , H01J37/3177 , H01J37/21 , H01J2237/1415 , H01J2237/1516
摘要： A fine-adjustable charged particle lens comprises a magnetic circuit assembly including permanent magnets, a yoke body, and a shunting device comprising a shunting component, and this assembly surrounds a beam passage extending along the longitudinal axis (cx). The shunting device is placed in the yoke body besides the permanent magnets and may be composed of several sector components, comprising different high magnetically permeable materials. The permanent magnet and the yoke body form a magnetic circuit having at least two gaps, in order to generate a magnetic field reaching inwards into the beam passage, into which a sleeve insert having electrostatic electrodes can be inserted, which may also generate an electric field spatially overlapping said magnetic field. The shunting device partially bypasses the magnetic flux of said circuit assembly and thus reduces the magnetic field to a desired value.
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公开(公告)号：US11735391B2
公开(公告)日：2023-08-22
申请号：US17234320
申请日：2021-04-19
IPC分类号： H01J37/063 , H01J37/04 , H01J37/147
CPC分类号： H01J37/063 , H01J37/04 , H01J37/1471 , H01J2237/0213 , H01J2237/06375
摘要： A charged-particle source for generating a charged-particle comprises a sequence of electrodes, including an emitter electrode with an emitter surface, a counter electrode held at an electrostatic voltage with respect to the emitter electrode at a sign opposite to that of the electrically charged particles, and one or more adjustment electrodes surrounding the source space between the emitter electrode and the counter electrode. These electrodes have a basic overall rotational symmetry along a central axis, with the exception of one or more steering electrodes which is an electrode which interrupts the radial axial-symmetry of the electric potential of the source, for instance tilted or shifted to an eccentric position or orientation, configured to force unintended, secondary charged particles away from the emission surface.
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公开(公告)号：US20200348597A1
公开(公告)日：2020-11-05
申请号：US16865135
申请日：2020-05-01
IPC分类号： G03F7/213 , H01J37/317
摘要： In a charged-particle lithography apparatus, during writing a desired pattern, the duration of exposure slots is adapted to compensate for fluctuations of the particle beam. In the writing process the aperture images are mutually overlapping on the target so each pixel is exposed through a number of aperture images overlapping at the respective pixel, which results in an exposure of the respective pixel through an effective pixel exposure time, i.e., the sum of durations of contributing exposure slots, and the exposure slot durations are adjusted by: (i) determining a desired duration of the effective pixel exposure time for the pixels, as a function of the time of exposure of the pixels, (ii) determining contributing exposure slots for the pixels, (iii) calculating durations for the contributing exposure slots thus determined such that the sum of the durations over said contributing exposure slots is an actual effective exposure time which approximates said desired duration of the effective pixel exposure time. The durations in step (iii) are calculated in accordance with a predetermined set of allowed durations, wherein at least one of the durations thus calculated is different from the other durations selected for said set of exposure slots
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10.发明授权公开(公告)号：US10522329B2
公开(公告)日：2019-12-31
申请号：US16105699
申请日：2018-08-20
IPC分类号： H01J37/00 , H01J37/302 , H01J37/317
摘要： A method for re-calculating a pattern to be exposed on a target by means of a charged-particle multi-beam writing apparatus is presented. The pattern elements of a pattern, initially associated with a respective assigned dose, are recalculated in view of obtaining reshaped pattern elements which have a nominal dose as assigned dose. The nominal dose represents a predefined standard value of exposure dose to be exposed for pixels during a scanning stripe exposure within the multi-beam apparatus. For the pattern elements associated with an assigned dose deviating from the nominal dose, the pattern element is reshaped by determining a reshape distance from the value of the assigned dose using a predefined dose slope function forming a reshaped pattern element, whose boundary is offset with regard to boundary of the initial pattern element by an offset distance equaling said reshape distance, assigning the nominal dose to the reshaped pattern element, and replacing the pattern element by the reshaped pattern element.
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