公开(公告)号：US07668505B2

公开(公告)日：2010-02-23

申请号：US10938482

申请日：2004-09-10

申请人： David C. Vacanti ,  Ijaz H. Jafri ,  Keith A. Bayern

发明人： David C. Vacanti ,  Ijaz H. Jafri ,  Keith A. Bayern

IPC分类号： H04B7/14

CPC分类号： H03H9/462

摘要： The present invention provides systems and methods for pre-filter in a VHF receiver using Micro-Electro-Mechanical Systems (MEMS) filters. The system includes an antenna, and first and second Micro-Electro-Mechanical Systems (MEMS) filters. The first MEMS filter filters a signal received by the antenna based on a first pre-defined bandwidth, and the second MEMS filter filters the signal filtered by the first MEMS filter based on a second bandwidth. The system also includes an analog to digital converter that converts the signal filtered by the second MEMS filter into a digital signal, a down converter that down converts the digital signal produced by the A to D converter, and a digital signal processor that processes the down converted digital signal produced by the down converter. The first and second MEMS filters or the down converter are adjustable based on a received tuning signal.

摘要翻译： 本发明提供了使用微机电系统（MEMS）滤波器在VHF接收机中进行预滤波的系统和方法。 该系统包括天线以及第一和第二微机电系统（MEMS）滤波器。 第一MEMS滤波器基于第一预定义带宽对由天线接收的信号进行滤波，并且第二MEMS滤波器基于第二带宽对由第一MEMS滤波器滤波的信号进行滤波。 该系统还包括将由第二MEMS滤波器滤波的信号转换为数字信号的模数转换器，将由A转D转换器产生的数字信号下变频的下变频器以及处理下降的数字信号处理器 由转换器产生的转换数字信号。 第一和第二MEMS滤波器或降压转换器可基于接收到的调谐信号来调节。

公开(公告)号：US20080029863A1

公开(公告)日：2008-02-07

申请号：US11462767

申请日：2006-08-07

申请人： Mark H. Eskridge ,  Ijaz H. Jafri

发明人： Mark H. Eskridge ,  Ijaz H. Jafri

IPC分类号： H01L23/02

CPC分类号： B81C1/00301 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2203/031

摘要： An hermetic, gas filled or vacuum package device and method of making a vacuum package device. The device includes a device layer having one or more Micro Electro-Mechanical Systems (MEMS) devices. The device layer includes one or more electrical leads coupled to the one or more MEMS devices. The device also includes a first wafer having one or more silicon pins, wherein a first surface of the first wafer is bonded to a first surface of the device layer in such a manner that the one or more silicon pins are in electrical communication with the electrical leads. A second wafer, which may also have one or more silicon pins, is bonded to a second surface of the device layer. The first and second wafers are formed of borosilicate glass and the device layer is formed of silicon.

摘要翻译： 气密填充或真空包装装置及制造真空包装装置的方法。 该器件包括具有一个或多个微机电系统（MEMS）器件的器件层。 器件层包括耦合到一个或多个MEMS器件的一个或多个电引线。 该器件还包括具有一个或多个硅引脚的第一晶片，其中第一晶片的第一表面以这样的方式结合到器件层的第一表面，使得一个或多个硅引脚与电气 领导。 还可以具有一个或多个硅引脚的第二晶片被接合到器件层的第二表面。 第一和第二晶片由硼硅酸盐玻璃形成，器件层由硅形成。

公开(公告)号：US06612317B2

公开(公告)日：2003-09-02

申请号：US09837507

申请日：2001-04-18

申请人： Michael A. Costantini ,  Mohan Chandra ,  Heiko D. Moritz ,  Ijaz H. Jafri ,  David J. Mount ,  Rick M. Heathwaite

发明人： Michael A. Costantini ,  Mohan Chandra ,  Heiko D. Moritz ,  Ijaz H. Jafri ,  David J. Mount ,  Rick M. Heathwaite

IPC分类号： B08B310

CPC分类号： H01L21/67034 ,  B01J3/008 ,  B08B7/0021 ,  Y02P20/544

摘要： A continuous flow, steady state fluid delivery and recovery system for a process chamber and processes requiring supercritical fluid and desired additives including co-solvents, for conducting repetitive batch processing operations in an automated environment, for such processes as supercritical carbon dioxide cleaning and processing of semiconductor wafers. The system provides for steady-state operation of fluid flow and byproducts recovery while the process chamber is brought rapidly and repeatedly on and off line as in batch operations and for various process steps.

摘要翻译： 用于处理室的连续流动，稳态流体输送和回收系统以及需要超临界流体和所需添加剂（包括共溶剂）的过程，用于在自动化环境中进行重复批处理操作，用于诸如超临界二氧化碳清洗和处理 半导体晶圆。 该系统提供流体流动和副产物回收的稳态操作，而在批处理操作和各种工艺步骤中，处理室快速且重复地打开和关闭。

公开(公告)号：US6067728A

公开(公告)日：2000-05-30

申请号：US23290

申请日：1998-02-13

申请人： Robert B. Farmer ,  Bernard D. Jones ,  Kedar P. Gupta ,  Ijaz H. Jafri ,  Derek M. Dispensa

发明人： Robert B. Farmer ,  Bernard D. Jones ,  Kedar P. Gupta ,  Ijaz H. Jafri ,  Derek M. Dispensa

IPC分类号： H01L21/00 ,  H01L21/687 ,  F26B3/00

CPC分类号： H01L21/6719 ,  H01L21/67028 ,  H01L21/68785 ,  Y10S134/902

摘要： An apparatus and method for drying a microelectronic structure on wafer substrate using supercritical phase gas techniques and a unique pressure vessel locking mechanism. There is lid and a base with an open cavity to contain at least one microelectronic structure on wafer substrate. Clamping the lid to the base uses locking clamp rings with open jaws large to partially enclose the edge of the vessel. The clamp rings are supported symmetrically about the sides of the vessel. The rings are adjusted between an open position where the rings are clear of the vessel and a locking position where the jaws partially enclose the vessel. The jaws and the vessel share a tapered cam plate and roller system configured to bring the rings into vertically compressive locking engagement on the pressure vessel when the rings are moved into locking position. Mechanical interlocks provide security against back pressure opening the rings. The invention includes the necessary mechanisms and systems for manual or automatic closing and clamping the vessel, controlling pressure in the cavity, controlling temperature in the cavity, flowing process fluid through the cavity, venting the cavity, unclamping the pressure vessel, and removing the lid.

摘要翻译： 一种使用超临界相气技术和唯一的压力容器锁定机构来干燥晶片衬底上的微电子结构的装置和方法。 存在具有开口腔的盖和底座，以在晶片衬底上容纳至少一个微电子结构。 将盖子夹紧到基座上使用具有大开口钳口的锁紧环，以部分地封闭容器的边缘。 夹环围绕容器的侧面对称地支撑。 所述环在所述环离开所述容器的打开位置和所述钳口部分地包围所述容器的锁定位置之间进行调节。 钳口和容器共享锥形凸轮板和辊系统，其被配置为当环移动到锁定位置时使环在压力容器上垂直地压缩锁定接合。 机械互锁提供打开环的背压的安全性。 本发明包括用于手动或自动关闭和夹紧容器的必要机构和系统，控制空腔中的压力，控制空腔中的温度，流过腔体的流动流体，排空空腔，松开压力容器，以及移除盖子 。

公开(公告)号：US08453312B2

公开(公告)日：2013-06-04

申请号：US12164300

申请日：2008-06-30

申请人： Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

发明人： Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

IPC分类号： H04R31/00 ,  H01L21/311

CPC分类号： B81C1/00142 ,  B81B2201/0271 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/2447 ,  H03H9/462 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49826 ,  Y10T29/49861

摘要： A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

摘要翻译： 一种使用双晶片工艺制造单晶硅微机械谐振器的方法，包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记 被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。

公开(公告)号：US08053265B2

公开(公告)日：2011-11-08

申请号：US12366799

申请日：2009-02-06

申请人： Michael Foster ,  Ijaz H. Jafri

发明人： Michael Foster ,  Ijaz H. Jafri

IPC分类号： H01L21/00

CPC分类号： B81C1/00103 ,  B81B2203/0384 ,  B81C2203/031

摘要： Alternative methods of constructing a vertically offset structure are disclosed. An embodiment includes forming a flexible layer having first and second end portions, an intermediate portion coupling the first and second portions, and upper and lower surfaces. The distance between the upper and lower surfaces at the intermediate portion is less than the distance between the upper and lower surfaces at the first and second end portions. The first end portion is bonded to a base member. The second end portion of the flexible layer is deflected until the second end portion contacts the base member. The second end portion is bonded to the base member.

摘要翻译： 公开了构造垂直偏移结构的替代方法。 一个实施例包括形成具有第一和第二端部的柔性层，连接第一和第二部分的中间部分以及上表面和下表面。 中间部分的上表面和下表面之间的距离小于第一和第二端部处的上表面和下表面之间的距离。 第一端部结合到基部构件。 柔性层的第二端部偏转直到第二端部接触基体。 第二端部结合到基部构件。

公开(公告)号：US07662655B2

公开(公告)日：2010-02-16

申请号：US12164850

申请日：2008-06-30

申请人： Ijaz H. Jafri ,  Galen P. Magendanz

发明人： Ijaz H. Jafri ,  Galen P. Magendanz

IPC分类号： H01L21/00

CPC分类号： B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

摘要： A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

摘要翻译： 一种用于形成具有使用双晶片工艺形成的单晶硅（SCS）微机械谐振器的振动微机械结构的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容空气 间隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 窗口在谐振器晶片的有源层中打开; 用光致抗蚀剂掩蔽谐振器晶片的有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工SCS谐振器; 随后将光致抗蚀剂干燥剥离。 图案化的SCS覆盖层结合到谐振器晶片，从而形成密封的芯片级晶片级真空封装器件。

公开(公告)号：US07407826B2

公开(公告)日：2008-08-05

申请号：US11322842

申请日：2005-12-30

申请人： Ijaz H. Jafri ,  Galen P. Magendanz

发明人： Ijaz H. Jafri ,  Galen P. Magendanz

IPC分类号： H01L21/00

CPC分类号： B81C1/00333 ,  B81B2201/0271 ,  B81C1/00142 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2447 ,  H03H9/462 ,  H03H2009/02511

摘要： A method for forming a vibrating micromechanical structure having a single crystal silicon (SCS) micromechanical resonator formed using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; windows are opened in the active layer of the resonator wafer; masking the active layer of the resonator wafer with photoresist; a SCS resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist is subsequently dry stripped. A patterned SCS cover is bonded to the resonator wafer resulting in hermetically sealed chip scale wafer level vacuum packaged devices.

摘要翻译： 一种用于形成具有使用双晶片工艺形成的单晶硅（SCS）微机械谐振器的振动微机械结构的方法，其包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容空气 间隙，隔离沟槽和对准标记被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 窗口在谐振器晶片的有源层中打开; 用光致抗蚀剂掩蔽谐振器晶片的有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工SCS谐振器; 随后将光致抗蚀剂干燥剥离。 图案化的SCS覆盖层结合到谐振器晶片，从而形成密封的芯片级晶片级真空封装器件。

公开(公告)号：US20100203718A1

公开(公告)日：2010-08-12

申请号：US12366799

申请日：2009-02-06

申请人： Michael Foster ,  Ijaz H. Jafri

发明人： Michael Foster ,  Ijaz H. Jafri

IPC分类号： H01L21/3205 ,  H01L21/306

CPC分类号： B81C1/00103 ,  B81B2203/0384 ,  B81C2203/031

摘要： Alternative methods of constructing a vertically offset structure are disclosed. An embodiment includes forming a flexible layer having first and second end portions, an intermediate portion coupling the first and second portions, and upper and lower surfaces. The distance between the upper and lower surfaces at the intermediate portion is less than the distance between the upper and lower surfaces at the first and second end portions. The first end portion is bonded to a base member. The second end portion of the flexible layer is deflected until the second end portion contacts the base member. The second end portion is bonded to the base member.

摘要翻译： 公开了构造垂直偏移结构的替代方法。 一个实施例包括形成具有第一和第二端部的柔性层，连接第一和第二部分的中间部分以及上表面和下表面。 中间部分的上表面和下表面之间的距离小于第一和第二端部处的上表面和下表面之间的距离。 第一端部结合到基部构件。 柔性层的第二端部偏转直到第二端部接触基体。 第二端部结合到基部构件。

公开(公告)号：US20090007413A1

公开(公告)日：2009-01-08

申请号：US12164308

申请日：2008-06-30

申请人： Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

发明人： Ijaz H. Jafri ,  Jonathan L. Klein ,  Galen P. Magendanz

IPC分类号： H04R31/00 ,  H01L21/00

CPC分类号： B81C1/00142 ,  B81B2201/0271 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/051 ,  H03H3/0072 ,  H03H9/2447 ,  H03H9/462 ,  Y10T29/49005 ,  Y10T29/49128 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49826 ,  Y10T29/49861

摘要： A method for fabrication of single crystal silicon micromechanical resonators using a two-wafer process, including either a Silicon-on-insulator (SOI) or insulating base and resonator wafers, wherein resonator anchors, a capacitive air gap, isolation trenches, and alignment marks are micromachined in an active layer of the base wafer; the active layer of the resonator wafer is bonded directly to the active layer of the base wafer; the handle and dielectric layers of the resonator wafer are removed; viewing windows are opened in the active layer of the resonator wafer; masking the single crystal silicon semiconductor material active layer of the resonator wafer with photoresist material; a single crystal silicon resonator is machined in the active layer of the resonator wafer using silicon dry etch micromachining technology; and the photoresist material is subsequently dry stripped.

摘要翻译： 一种使用双晶片工艺制造单晶硅微机械谐振器的方法，包括绝缘体上硅（SOI）或绝缘基底和谐振器晶片，其中谐振器锚，电容气隙，隔离沟槽和对准标记 被微加工在基底晶片的有源层中; 谐振器晶片的有源层直接接合到基底晶片的有源层; 去除谐振器晶片的手柄和电介质层; 观察窗在谐振器晶片的有源层中打开; 用光致抗蚀剂材料掩蔽谐振晶片的单晶硅半导体材料有源层; 使用硅干蚀刻微加工技术在谐振器晶片的有源层中加工单晶硅谐振器; 随后将光致抗蚀剂材料干燥剥离。