公开(公告)号：US06923859B2

公开(公告)日：2005-08-02

申请号：US10318256

申请日：2002-12-13

Applicant: Chin Kyo Kim

Inventor： Chin Kyo Kim

IPC: H01L33/00 ,  C23C14/00 ,  C23C14/06 ,  C30B23/02 ,  C30B25/02 ,  C30B25/10

CPC classification number: C30B23/02 ,  C23C14/0005 ,  C23C14/0641 ,  C23C14/228 ,  C30B25/02 ,  C30B29/406 ,  Y10S117/915 ,  Y10T117/1004 ,  Y10T117/1008

Abstract: Disclosed are an apparatus for manufacturing GaN substrate and a manufacturing method thereof enabling to prevent micro-cracks or bending of a GaN substrate by separating a substrate and a GaN layer from each other after growing the GaN layer on the substrate in the same chamber. The present invention includes a chamber for loading a substrate therein, a heating means heating the chamber, a Ga boat installed inside the chamber to receive a Ga molecule producing material, an injection pipe injecting a nitrogen molecule producing gas in the chamber, the nitrogen molecule producing gas reacting chemically on the Ga molecule producing material to form a GaN layer on the substrate, and a transparent window at a circumference of the chamber to apply a laser beam to the substrate.

Abstract translation: 公开了一种用于制造GaN衬底的装置及其制造方法，其能够在同一腔室中的衬底上生长GaN层之后，通过将衬底和GaN层彼此分离来防止GaN衬底的微裂纹或弯曲。 本发明包括用于在其中装载基板的室，加热室的加热装置，安装在室内的Ga舟以接收Ga分子产生材料，在室中注入产生氮分子的气体的注入管，氮分子 在Ga分子产生材料上化学反应生成气体以在衬底上形成GaN层，以及在室的圆周处的透明窗口，以将激光束施加到衬底。

公开(公告)号：US06508878B2

公开(公告)日：2003-01-21

申请号：US09794615

申请日：2001-02-28

Applicant: Chin Kyo Kim ,  Tae Kyung Yoo

Inventor： Chin Kyo Kim ,  Tae Kyung Yoo

IPC: C30B2516

CPC classification number: C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

Abstract: GaN system compound semiconductor and method for growing a crystal thereof, which can significantly reduce a concentration of crystalline defects caused by lattice mismatch by growing a GaN system compound semiconductor of GaN or InxGa1-xN by using InxAl1-xN crystal on a substrate as an intermediate buffer layer, the method including the steps of (1) providing a sapphire substrate, (2) growing an intermediate buffer layer of InxAl1-xN on the sapphire substrate, and (3) growing GaN or InxGa1-xN system compound semiconductor on the intermediate buffer layer.

Abstract translation: GaN系化合物半导体及其晶体生长方法，其可以通过在基板上使用In x Al 1-x N晶体作为中间体来生长GaN或In x Ga 1-x N的GaN系化合物半导体而显着降低由晶格失配引起的晶体缺陷的浓度 缓冲层，该方法包括以下步骤：（1）提供蓝宝石衬底，（2）在蓝宝石衬底上生长InxAl1-xN的中间缓冲层，以及（3）在中间层上生长GaN或In x Ga 1-x N系化合物半导体 缓冲层。

公开(公告)号：US06590234B2

公开(公告)日：2003-07-08

申请号：US09773508

申请日：2001-02-02

Applicant: Chin Kyo Kim ,  Tae Kyung Yoo

Inventor： Chin Kyo Kim ,  Tae Kyung Yoo

IPC: H01L3300

CPC classification number: H01L33/32 ,  B82Y20/00 ,  H01L33/0075 ,  H01S5/2009 ,  H01S5/3072 ,  H01S5/321 ,  H01S5/34333

Abstract: A nitride semiconductor light-emitting element is disclosed. An n type AlGaN cladding layer is grown on a GaN substrate, and an InGaN active layer of a quantum well structure is grown on the n type AlGaN cladding layer at a temperature of about 800° C. or less. Subsequently, a buffer layer of any one of GaN, AlGaN, and InGaN is grown on the InGaN active layer at a temperature of about 900° C. or less. A p type AlGaN cladding layer and a p type GaN electrode layer are sequentially grown on the buffer layer. A p type electrode is formed over the p type GaN electrode layer while an n type electrode is formed below the substrate or over the n type cladding layer. Thus, the nitride semiconductor light-emitting element having high efficiency optical characteristic and thermal characteristic can be obtained.

Abstract translation: 公开了一种氮化物半导体发光元件。 在GaN衬底上生长n型AlGaN包覆层，并且在n型AlGaN包覆层上在大约800℃或更低的温度下生长量子阱结构的InGaN有源层。 随后，在约900℃或更低的温度下，在InGaN有源层上生长GaN，AlGaN和InGaN中的任一种的缓冲层。 在缓冲层上依次生长p型AlGaN包覆层和p型GaN电极层。 p型电极形成在p型GaN电极层上，而n型电极形成在衬底下方或n型覆层上。 因此，可以获得具有高效光学特性和热特性的氮化物半导体发光元件。

公开(公告)号：US06211089B1

公开(公告)日：2001-04-03

申请号：US09400294

申请日：1999-09-21

Applicant: Chin Kyo Kim ,  Jae Hyung Yi

Inventor： Chin Kyo Kim ,  Jae Hyung Yi

IPC: H01L21302

CPC classification number: H01L21/02008 ,  H01L21/30621 ,  H01L21/3245

Abstract: Disclosed is a method for fabricating a smoothly surfaced GaN substrate. A GaN substrate is polished with diamond slurries and then, with boron carbide plates. The irreversible damaged layer which is caused by the mechanical polishing is removed by reactive ion etching, after which the GaN substrate is thermally treated to revive the recoverable damaged layer which is owed to the reactive ion etching. The resulting GaN substrate has a sufficiently smooth surface to allow subsequent thin films of high quality to grow thereon. Based on the GaN substrate of the present invention, blue light elements with excellent properties can be fabricated.

Abstract translation: 公开了一种用于制造平滑表面的GaN衬底的方法。 用金刚石浆料抛光GaN衬底，然后用碳化硼板抛光。 通过反应离子蚀刻除去由机械抛光引起的不可逆损伤层，然后对GaN衬底进行热处理以恢复可归因于反应离子蚀刻的可恢复损伤层。 所得的GaN衬底具有足够光滑的表面，以允许后续的高质量薄膜在其上生长。 基于本发明的GaN衬底，可以制造具有优异性能的蓝光元件。