Growth of inorganic thin films using self-assembled monolayers as nucleation sites
    4.
    发明申请
    Growth of inorganic thin films using self-assembled monolayers as nucleation sites 有权
    使用自组装单层作为成核位点的无机薄膜的生长

    公开(公告)号:US20060003438A1

    公开(公告)日:2006-01-05

    申请号:US11155453

    申请日:2005-06-17

    Abstract: Systems and methods for preparing inorganic-organic interfaces using organo-transition metal complexes and self-assembled monolayers as organic surfaces. In one embodiment, a silicon wafer is cleaned and reacted with stabilized pirhana etch to provide an oxide surface. The surface is reacted with the trichlorosilyl end of alkyltrichlorosilanes to prepare self assembling monomers (SAMs). The alkyltrichlorosilanes have the general formula R1-R—SiCl3, where R1 is —OH, —NH2, —COOH, —SH, COOCH3, —CN, and R is a conjugated hydrocarbon, such as (CH2)n where n is in the range of 3 to 18. The functionalized end of the SAM can optionally modified chemically as appropriate, and is then reacted with metal-bearing species such as tetrakis(dimethylamido)titanium, Ti[N(CH3)2]4, (TDMAT) to provide a titanium nitride layer.

    Abstract translation: 使用有机过渡金属络合物和自组装单层作为有机表面制备无机 - 有机界面的系统和方法。 在一个实施例中,清洁硅晶片并与稳定的pirhana蚀刻反应以提供氧化物表面。 表面与烷基三氯硅烷的三氯甲硅烷基末端反应以制备自组装单体(SAM)。 烷基三氯硅烷具有通式R 1 -R 3 -SiCl 3,其中R 1是-OH,-NH 2,-COOH,-SH,COOCH 3, SUB,-CN和R是共轭烃,例如(CH 2)n N,其中n在3至18的范围内。SAM的官能化端可以任选地适当地化学改性, 然后与含金属的物质如四(二甲基氨基)钛,Ti [N(CH 3)2)2],( TDMAT)以提供氮化钛层。

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